JPH1126735A - 結合ｓｏｉウェハ - Google Patents

結合ｓｏｉウェハ

Info

Publication number
JPH1126735A
JPH1126735A JP9195054A JP19505497A JPH1126735A JP H1126735 A JPH1126735 A JP H1126735A JP 9195054 A JP9195054 A JP 9195054A JP 19505497 A JP19505497 A JP 19505497A JP H1126735 A JPH1126735 A JP H1126735A
Authority
JP
Japan
Prior art keywords
wafer
thin film
active layer
hole
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9195054A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1126735A5 (enExample
Inventor
Yoichi Okumura
陽一 奥村
Osamu Aizawa
修 相沢
Toshiyuki Tani
俊幸 谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP9195054A priority Critical patent/JPH1126735A/ja
Publication of JPH1126735A publication Critical patent/JPH1126735A/ja
Publication of JPH1126735A5 publication Critical patent/JPH1126735A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures

Landscapes

  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP9195054A 1997-07-04 1997-07-04 結合ｓｏｉウェハ Pending JPH1126735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9195054A JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9195054A JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Publications (2)

Publication Number Publication Date
JPH1126735A true JPH1126735A (ja) 1999-01-29
JPH1126735A5 JPH1126735A5 (enExample) 2004-11-04

Family

ID=16334795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9195054A Pending JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Country Status (1)

Country Link
JP (1) JPH1126735A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000010195A3 (en) * 1998-08-10 2000-05-18 Memc Electronic Materials Preparation of metal-precipitates permeable insulator for soi substrate
JP2010062414A (ja) * 2008-09-05 2010-03-18 Sumco Corp 裏面照射型固体撮像素子用ウェーハの製造方法
US8293613B2 (en) 2007-03-12 2012-10-23 Samsung Electronics Co., Ltd. Gettering structures and methods and their application

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000010195A3 (en) * 1998-08-10 2000-05-18 Memc Electronic Materials Preparation of metal-precipitates permeable insulator for soi substrate
US8293613B2 (en) 2007-03-12 2012-10-23 Samsung Electronics Co., Ltd. Gettering structures and methods and their application
JP2010062414A (ja) * 2008-09-05 2010-03-18 Sumco Corp 裏面照射型固体撮像素子用ウェーハの製造方法

Similar Documents

Publication Publication Date Title
US5298449A (en) Semiconductor substrate having a silicon-on-insulator structure and method of fabricating the same
JPH11297703A (ja) 半導体装置の製造方法
JP3645390B2 (ja) 半導体装置およびその製造方法
JPH1126735A5 (enExample)
JP3887973B2 (ja) Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
JP3484961B2 (ja) Ｓｏｉ基板の製造方法
JPH11307471A (ja) Ｓｏｉ基板の製造方法
JPS59977B2 (ja) 絶縁ゲ−ト型集積回路
JP2798276B2 (ja) 半導体記憶装置及びその製造方法
JPH02148821A (ja) 接着半導体基板
JPH09306920A (ja) 半導体集積回路装置およびその製造方法
JP2001144273A (ja) 半導体装置の製造方法
JPS6120141B2 (enExample)
JP2768914B2 (ja) 半導体集積回路装置の製造方法
JPH0974202A (ja) 半導体装置及びその製造方法
JPH0247853B2 (enExample)
JPH04196264A (ja) 半導体装置の製造方法
JP3147374B2 (ja) 半導体装置
JPH09129884A (ja) Ｓｏｉ型薄膜電界効果トランジスタ及びその製造方法
JPS62245649A (ja) 半導体装置及びその製造方法
JPH04225551A (ja) 半導体装置およびその製造方法
JP2004172362A (ja) 半導体ウエハの不純物除去方法、半導体ウエハアセンブリ、半導体ウエハ、及び半導体デバイス
JPH07326604A (ja) 半導体装置の製造方法
JPH01169948A (ja) 半導体装置の製造方法
JPH03220764A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060301

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060322

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060518

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20060518

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060905