JPH1126735A - 結合ｓｏｉウェハ - Google Patents

結合ｓｏｉウェハ

Info

Publication number
JPH1126735A
JPH1126735A JP19505497A JP19505497A JPH1126735A JP H1126735 A JPH1126735 A JP H1126735A JP 19505497 A JP19505497 A JP 19505497A JP 19505497 A JP19505497 A JP 19505497A JP H1126735 A JPH1126735 A JP H1126735A
Authority
JP
Japan
Prior art keywords
wafer
thin film
active layer
hole
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19505497A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1126735A5 (enExample
Inventor
Yoichi Okumura
陽一 奥村
Osamu Aizawa
修 相沢
Toshiyuki Tani
俊幸 谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP19505497A priority Critical patent/JPH1126735A/ja
Publication of JPH1126735A publication Critical patent/JPH1126735A/ja
Publication of JPH1126735A5 publication Critical patent/JPH1126735A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP19505497A 1997-07-04 1997-07-04 結合ｓｏｉウェハ Pending JPH1126735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19505497A JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19505497A JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Publications (2)

Publication Number Publication Date
JPH1126735A true JPH1126735A (ja) 1999-01-29
JPH1126735A5 JPH1126735A5 (enExample) 2004-11-04

Family

ID=16334795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19505497A Pending JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Country Status (1)

Country Link
JP (1) JPH1126735A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000010195A3 (en) * 1998-08-10 2000-05-18 Memc Electronic Materials Preparation of metal-precipitates permeable insulator for soi substrate
JP2010062414A (ja) * 2008-09-05 2010-03-18 Sumco Corp 裏面照射型固体撮像素子用ウェーハの製造方法
US8293613B2 (en) 2007-03-12 2012-10-23 Samsung Electronics Co., Ltd. Gettering structures and methods and their application

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000010195A3 (en) * 1998-08-10 2000-05-18 Memc Electronic Materials Preparation of metal-precipitates permeable insulator for soi substrate
US8293613B2 (en) 2007-03-12 2012-10-23 Samsung Electronics Co., Ltd. Gettering structures and methods and their application
JP2010062414A (ja) * 2008-09-05 2010-03-18 Sumco Corp 裏面照射型固体撮像素子用ウェーハの製造方法

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