JPH11200035A - スパッタ化学蒸着複合装置 - Google Patents

スパッタ化学蒸着複合装置

Info

Publication number
JPH11200035A
JPH11200035A JP10021392A JP2139298A JPH11200035A JP H11200035 A JPH11200035 A JP H11200035A JP 10021392 A JP10021392 A JP 10021392A JP 2139298 A JP2139298 A JP 2139298A JP H11200035 A JPH11200035 A JP H11200035A
Authority
JP
Japan
Prior art keywords
chamber
substrate
sputtering
cvd
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10021392A
Other languages
English (en)
Japanese (ja)
Inventor
Masahiko Kobayashi
正彦 小林
Nobuyuki Takahashi
信行 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP10021392A priority Critical patent/JPH11200035A/ja
Priority to TW089218024U priority patent/TW512831U/zh
Priority to KR1019980008297A priority patent/KR100297971B1/ko
Publication of JPH11200035A publication Critical patent/JPH11200035A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP10021392A 1998-01-19 1998-01-19 スパッタ化学蒸着複合装置 Pending JPH11200035A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10021392A JPH11200035A (ja) 1998-01-19 1998-01-19 スパッタ化学蒸着複合装置
TW089218024U TW512831U (en) 1998-01-19 1998-02-20 A sputter and chemical vapor deposition system
KR1019980008297A KR100297971B1 (ko) 1998-01-19 1998-03-12 스퍼터화학증착복합장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10021392A JPH11200035A (ja) 1998-01-19 1998-01-19 スパッタ化学蒸着複合装置

Publications (1)

Publication Number Publication Date
JPH11200035A true JPH11200035A (ja) 1999-07-27

Family

ID=12053802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10021392A Pending JPH11200035A (ja) 1998-01-19 1998-01-19 スパッタ化学蒸着複合装置

Country Status (3)

Country Link
JP (1) JPH11200035A (ko)
KR (1) KR100297971B1 (ko)
TW (1) TW512831U (ko)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003077863A (ja) * 2001-08-31 2003-03-14 Tokyo Electron Ltd Ｃｖｄ成膜方法
WO2003034477A1 (en) * 2001-10-18 2003-04-24 Chul Soo Byun Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
US7060422B2 (en) * 1999-11-02 2006-06-13 Tokyo Electron Limited Method of supercritical processing of a workpiece
JP2007162063A (ja) * 2005-12-13 2007-06-28 Dainippon Printing Co Ltd スパッタ装置および基板搬送用キャリア
JP2010135849A (ja) * 2003-06-24 2010-06-17 Tokyo Electron Ltd 被処理体処理装置の圧力制御方法
JP2011509347A (ja) * 2007-12-27 2011-03-24 エグザテック・リミテッド・ライアビリティー・カンパニー マルチパス真空コーティングシステム
JP2012184481A (ja) * 2011-03-07 2012-09-27 Ulvac Japan Ltd 真空一貫基板処理装置及び成膜方法
JP2013237884A (ja) * 2012-05-14 2013-11-28 Toyota Motor Corp プラズマ成膜装置
JP2018031065A (ja) * 2016-08-26 2018-03-01 トヨタ自動車株式会社 プラズマ成膜方法
CN111286705A (zh) * 2018-12-06 2020-06-16 北京华业阳光新能源有限公司 双室三工位多靶共溅磁控溅射镀膜设备
CN114525486A (zh) * 2022-02-15 2022-05-24 东莞市峰谷纳米科技有限公司 溅射镀膜设备

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4841035B2 (ja) * 2000-11-27 2011-12-21 東京エレクトロン株式会社 真空処理装置
JP3543770B2 (ja) * 2001-02-20 2004-07-21 日本電気株式会社 移動通信システム、移動端末及びそれらに用いる送信ダイバーシチ適用方法並びにそのプログラム
KR100429876B1 (ko) * 2001-07-27 2004-05-04 삼성전자주식회사 고밀도 씨딩층을 갖는 루테늄막을 구비하는 반도체 소자의제조 방법 및 그러한 반도체 소자를 형성하기 위한 제조장비
TWI295816B (en) * 2005-07-19 2008-04-11 Applied Materials Inc Hybrid pvd-cvd system
US7432201B2 (en) 2005-07-19 2008-10-07 Applied Materials, Inc. Hybrid PVD-CVD system
KR100731924B1 (ko) * 2006-12-04 2007-06-28 주식회사 나노트론 기판 휨 측정을 통한 공정 제어 방법, 이러한 공정 방법이 기록된 저장매체 및 이러한 공정 방법에 적합한 공정 장비
US20090114534A1 (en) * 2007-08-31 2009-05-07 Geoffrey Green Sputtering Assembly
JP7313308B2 (ja) * 2019-04-25 2023-07-24 芝浦メカトロニクス株式会社 成膜装置及び成膜方法
CN111850471B (zh) * 2019-04-25 2023-05-12 芝浦机械电子装置株式会社 成膜装置以及成膜方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422121A (ja) * 1990-05-17 1992-01-27 Fujitsu Ltd 半導体製造装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7060422B2 (en) * 1999-11-02 2006-06-13 Tokyo Electron Limited Method of supercritical processing of a workpiece
JP2003077863A (ja) * 2001-08-31 2003-03-14 Tokyo Electron Ltd Ｃｖｄ成膜方法
US7485339B2 (en) 2001-10-18 2009-02-03 Chulsoo Byun Method for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
WO2003034477A1 (en) * 2001-10-18 2003-04-24 Chul Soo Byun Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
US7156921B2 (en) 2001-10-18 2007-01-02 Chulsoo Byun Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
JP2010135849A (ja) * 2003-06-24 2010-06-17 Tokyo Electron Ltd 被処理体処理装置の圧力制御方法
JP2007162063A (ja) * 2005-12-13 2007-06-28 Dainippon Printing Co Ltd スパッタ装置および基板搬送用キャリア
JP2011509347A (ja) * 2007-12-27 2011-03-24 エグザテック・リミテッド・ライアビリティー・カンパニー マルチパス真空コーティングシステム
US10344384B2 (en) 2007-12-27 2019-07-09 Exatec, Llc Method of using a multi-pass vacuum coating system
JP2012184481A (ja) * 2011-03-07 2012-09-27 Ulvac Japan Ltd 真空一貫基板処理装置及び成膜方法
JP2013237884A (ja) * 2012-05-14 2013-11-28 Toyota Motor Corp プラズマ成膜装置
JP2018031065A (ja) * 2016-08-26 2018-03-01 トヨタ自動車株式会社 プラズマ成膜方法
CN111286705A (zh) * 2018-12-06 2020-06-16 北京华业阳光新能源有限公司 双室三工位多靶共溅磁控溅射镀膜设备
CN111286705B (zh) * 2018-12-06 2024-05-03 北京华业阳光新能源有限公司 双室三工位多靶共溅磁控溅射镀膜设备
CN114525486A (zh) * 2022-02-15 2022-05-24 东莞市峰谷纳米科技有限公司 溅射镀膜设备

Also Published As

Publication number Publication date
TW512831U (en) 2002-12-01
KR100297971B1 (ko) 2001-08-07
KR19990066676A (ko) 1999-08-16

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