TW512831U - A sputter and chemical vapor deposition system - Google Patents

A sputter and chemical vapor deposition system

Info

Publication number
TW512831U
TW512831U TW089218024U TW89218024U TW512831U TW 512831 U TW512831 U TW 512831U TW 089218024 U TW089218024 U TW 089218024U TW 89218024 U TW89218024 U TW 89218024U TW 512831 U TW512831 U TW 512831U
Authority
TW
Taiwan
Prior art keywords
sputter
vapor deposition
chemical vapor
deposition system
chemical
Prior art date
Application number
TW089218024U
Other languages
English (en)
Inventor
Masahiko Kobayashi
Nobuyuki Takahashi
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Publication of TW512831U publication Critical patent/TW512831U/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW089218024U 1998-01-19 1998-02-20 A sputter and chemical vapor deposition system TW512831U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10021392A JPH11200035A (ja) 1998-01-19 1998-01-19 スパッタ化学蒸着複合装置

Publications (1)

Publication Number Publication Date
TW512831U true TW512831U (en) 2002-12-01

Family

ID=12053802

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089218024U TW512831U (en) 1998-01-19 1998-02-20 A sputter and chemical vapor deposition system

Country Status (3)

Country Link
JP (1) JPH11200035A (zh)
KR (1) KR100297971B1 (zh)
TW (1) TW512831U (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001033615A2 (en) * 1999-11-02 2001-05-10 Tokyo Electron Limited Method and apparatus for supercritical processing of multiple workpieces
JP4841035B2 (ja) * 2000-11-27 2011-12-21 東京エレクトロン株式会社 真空処理装置
JP3543770B2 (ja) * 2001-02-20 2004-07-21 日本電気株式会社 移動通信システム、移動端末及びそれらに用いる送信ダイバーシチ適用方法並びにそのプログラム
KR100429876B1 (ko) * 2001-07-27 2004-05-04 삼성전자주식회사 고밀도 씨딩층을 갖는 루테늄막을 구비하는 반도체 소자의제조 방법 및 그러한 반도체 소자를 형성하기 위한 제조장비
JP4738671B2 (ja) * 2001-08-31 2011-08-03 東京エレクトロン株式会社 Ｃｖｄ成膜方法
JP4387190B2 (ja) 2001-10-18 2009-12-16 ビュン，チュル，スー 汚染防止と膜成長速度増進機能を備える化学気相蒸着方法及び装置
JP5001388B2 (ja) * 2003-06-24 2012-08-15 東京エレクトロン株式会社 被処理体処理装置の圧力制御方法
TWI295816B (en) * 2005-07-19 2008-04-11 Applied Materials Inc Hybrid pvd-cvd system
US7432201B2 (en) 2005-07-19 2008-10-07 Applied Materials, Inc. Hybrid PVD-CVD system
JP5035499B2 (ja) * 2005-12-13 2012-09-26 大日本印刷株式会社 スパッタ装置および基板搬送用キャリア
KR100731924B1 (ko) * 2006-12-04 2007-06-28 주식회사 나노트론 기판 휨 측정을 통한 공정 제어 방법, 이러한 공정 방법이 기록된 저장매체 및 이러한 공정 방법에 적합한 공정 장비
US20090114534A1 (en) * 2007-08-31 2009-05-07 Geoffrey Green Sputtering Assembly
US20090169751A1 (en) * 2007-12-27 2009-07-02 Exatec Llc Multi-Pass Vacuum Coating Systems
JP5750281B2 (ja) * 2011-03-07 2015-07-15 株式会社アルバック 真空一貫基板処理装置及び成膜方法
JP5692161B2 (ja) * 2012-05-14 2015-04-01 トヨタ自動車株式会社 プラズマ成膜装置
JP6558642B2 (ja) * 2016-08-26 2019-08-14 トヨタ自動車株式会社 プラズマ成膜方法
CN111286705B (zh) * 2018-12-06 2024-05-03 北京华业阳光新能源有限公司 双室三工位多靶共溅磁控溅射镀膜设备
JP7313308B2 (ja) * 2019-04-25 2023-07-24 芝浦メカトロニクス株式会社 成膜装置及び成膜方法
CN111850471B (zh) * 2019-04-25 2023-05-12 芝浦机械电子装置株式会社 成膜装置以及成膜方法
CN114525486A (zh) * 2022-02-15 2022-05-24 东莞市峰谷纳米科技有限公司 溅射镀膜设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422121A (ja) * 1990-05-17 1992-01-27 Fujitsu Ltd 半導体製造装置

Also Published As

Publication number Publication date
JPH11200035A (ja) 1999-07-27
KR100297971B1 (ko) 2001-08-07
KR19990066676A (ko) 1999-08-16

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004
MK4K Expiration of patent term of a granted utility model