JPH11185469A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPH11185469A
JPH11185469A JP9357643A JP35764397A JPH11185469A JP H11185469 A JPH11185469 A JP H11185469A JP 9357643 A JP9357643 A JP 9357643A JP 35764397 A JP35764397 A JP 35764397A JP H11185469 A JPH11185469 A JP H11185469A
Authority
JP
Japan
Prior art keywords
circuit
fuse
signal
node
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9357643A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11185469A5 (enExample
Inventor
Mitsunori Tsujino
光紀 辻野
Goro Hayakawa
吾郎 早川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9357643A priority Critical patent/JPH11185469A/ja
Priority to US09/062,590 priority patent/US6366517B1/en
Priority to TW087108118A priority patent/TW382708B/zh
Priority to KR10-1998-0038666A priority patent/KR100368095B1/ko
Publication of JPH11185469A publication Critical patent/JPH11185469A/ja
Publication of JPH11185469A5 publication Critical patent/JPH11185469A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9357643A 1997-12-25 1997-12-25 半導体集積回路 Pending JPH11185469A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9357643A JPH11185469A (ja) 1997-12-25 1997-12-25 半導体集積回路
US09/062,590 US6366517B1 (en) 1997-12-25 1998-04-20 Semiconductor integrated circuit capable of readily adjusting circuit characteristic
TW087108118A TW382708B (en) 1997-12-25 1998-05-26 Semiconductor integrated circuit
KR10-1998-0038666A KR100368095B1 (ko) 1997-12-25 1998-09-18 회로특성을용이하게조절할수있는반도체집적회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9357643A JPH11185469A (ja) 1997-12-25 1997-12-25 半導体集積回路

Publications (2)

Publication Number Publication Date
JPH11185469A true JPH11185469A (ja) 1999-07-09
JPH11185469A5 JPH11185469A5 (enExample) 2005-07-28

Family

ID=18455171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9357643A Pending JPH11185469A (ja) 1997-12-25 1997-12-25 半導体集積回路

Country Status (4)

Country Link
US (1) US6366517B1 (enExample)
JP (1) JPH11185469A (enExample)
KR (1) KR100368095B1 (enExample)
TW (1) TW382708B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6940773B2 (en) * 2003-04-02 2005-09-06 Infineon Technologies Ag Method and system for manufacturing DRAMs with reduced self-refresh current requirements
TWI262504B (en) * 2003-04-15 2006-09-21 Ibm Dynamic semiconductor memory device
US20050068829A1 (en) * 2003-09-25 2005-03-31 Infineon Technologies North America Corp. Refresh rate adjustment
CN111953343B (zh) * 2020-09-07 2023-05-30 北京中科芯蕊科技有限公司 一种数字控制的亚阈值环形振荡器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2928263B2 (ja) 1989-03-20 1999-08-03 株式会社日立製作所 半導体装置
JPH052878A (ja) 1991-06-26 1993-01-08 Nec Corp リフレツシユ制御回路
JPH05189960A (ja) 1992-01-10 1993-07-30 Sharp Corp 半導体記憶装置
JPH0684353A (ja) * 1992-09-02 1994-03-25 Mitsubishi Electric Corp 半導体記憶装置
US5471431A (en) * 1993-04-22 1995-11-28 Sgs-Thomson Microelectronics, Inc. Structure to recover a portion of a partially functional embedded memory
US5410510A (en) 1993-10-04 1995-04-25 Texas Instruments Inc. Process of making and a DRAM standby charge pump with oscillator having fuse selectable frequencies
US5449214A (en) * 1993-10-27 1995-09-12 Totani; Hideo Safety system for an occupant of an automotive vehicle
JP3714696B2 (ja) * 1994-10-21 2005-11-09 富士通株式会社 半導体記憶装置
JP3315842B2 (ja) 1995-09-26 2002-08-19 富士通株式会社 半導体集積回路装置
KR100192574B1 (ko) * 1995-10-04 1999-06-15 윤종용 디코디드 퓨즈를 사용한 반도체 메모리 장치의 컬럼 리던던시 회로
KR100197562B1 (ko) * 1995-12-23 1999-06-15 윤종용 셀프 리프레쉬 주기를 조정할 수 있는 반도체 메모리장치

Also Published As

Publication number Publication date
TW382708B (en) 2000-02-21
KR19990062503A (ko) 1999-07-26
US6366517B1 (en) 2002-04-02
KR100368095B1 (ko) 2003-03-17

Similar Documents

Publication Publication Date Title
US5933383A (en) DRAM having a power supply voltage lowering circuit
US5465063A (en) Pulse generating circuit with temperature compensation
US20030117875A1 (en) Power-up signal generator for semiconductor memory devices
KR20050050206A (ko) 셀프 리프래쉬용 오실레이터
US6404687B2 (en) Semiconductor integrated circuit having a self-refresh function
US5956278A (en) Semiconductor circuit device with internal power supply circuit
JPH10188552A (ja) 半導体装置及び半導体記憶装置
JP4263818B2 (ja) 半導体集積回路
JP4036554B2 (ja) 半導体装置およびその試験方法、および半導体集積回路
US7898899B2 (en) Semiconductor integrated circuit and system
US7158435B2 (en) Fuse circuit and semiconductor integrated circuit device
JP2001035199A (ja) 半導体装置
US6424593B1 (en) Semiconductor memory device capable of adjusting internal parameter
US20040246045A1 (en) Voltage and time control circuits and methods of operating the same
JP2002150788A (ja) 半導体装置及び半導体装置初期設定方法
JPH11185469A (ja) 半導体集積回路
JP3673637B2 (ja) 冗長回路を備えた半導体メモリ装置
US5768197A (en) Redundancy circuit for semiconductor memory device
JP2982700B2 (ja) 冗長デコーダ回路
KR100554848B1 (ko) 어드레스 억세스 타임 조절 회로를 구비한 반도체 메모리소자
KR100203141B1 (ko) 누설전류를 줄이는 기능을 갖는 디램
US6344763B1 (en) Semiconductor integrated circuit device that can suppress generation of signal skew between data input/output terminals
US6654300B2 (en) Semiconductor memory device having internal circuit screening function
JP2002074961A (ja) 半導体記憶装置
JP2001052477A (ja) 周期選択回路及びこの周期選択回路を用いた半導体記憶装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041213

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041213

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070822

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070904

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080108