TW382708B - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuit Download PDFInfo
- Publication number
- TW382708B TW382708B TW087108118A TW87108118A TW382708B TW 382708 B TW382708 B TW 382708B TW 087108118 A TW087108118 A TW 087108118A TW 87108118 A TW87108118 A TW 87108118A TW 382708 B TW382708 B TW 382708B
- Authority
- TW
- Taiwan
- Prior art keywords
- fuse
- circuit
- mentioned
- node
- signal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000004913 activation Effects 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 8
- 230000002779 inactivation Effects 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 2
- 208000027697 autoimmune lymphoproliferative syndrome due to CTLA4 haploinsuffiency Diseases 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000002079 cooperative effect Effects 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 4
- 101150110971 CIN7 gene Proteins 0.000 description 3
- 201000001096 IGSF1 deficiency syndrome Diseases 0.000 description 3
- 101150110298 INV1 gene Proteins 0.000 description 3
- 208000028265 X-linked central congenital hypothyroidism with late-onset testicular enlargement Diseases 0.000 description 3
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- PRPINYUDVPFIRX-UHFFFAOYSA-N 1-naphthaleneacetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CC=CC2=C1 PRPINYUDVPFIRX-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- RDYMFSUJUZBWLH-UHFFFAOYSA-N endosulfan Chemical compound C12COS(=O)OCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl RDYMFSUJUZBWLH-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9357643A JPH11185469A (ja) | 1997-12-25 | 1997-12-25 | 半導体集積回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW382708B true TW382708B (en) | 2000-02-21 |
Family
ID=18455171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087108118A TW382708B (en) | 1997-12-25 | 1998-05-26 | Semiconductor integrated circuit |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6366517B1 (enExample) |
| JP (1) | JPH11185469A (enExample) |
| KR (1) | KR100368095B1 (enExample) |
| TW (1) | TW382708B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6940773B2 (en) * | 2003-04-02 | 2005-09-06 | Infineon Technologies Ag | Method and system for manufacturing DRAMs with reduced self-refresh current requirements |
| TWI262504B (en) * | 2003-04-15 | 2006-09-21 | Ibm | Dynamic semiconductor memory device |
| US20050068829A1 (en) * | 2003-09-25 | 2005-03-31 | Infineon Technologies North America Corp. | Refresh rate adjustment |
| CN111953343B (zh) * | 2020-09-07 | 2023-05-30 | 北京中科芯蕊科技有限公司 | 一种数字控制的亚阈值环形振荡器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2928263B2 (ja) | 1989-03-20 | 1999-08-03 | 株式会社日立製作所 | 半導体装置 |
| JPH052878A (ja) | 1991-06-26 | 1993-01-08 | Nec Corp | リフレツシユ制御回路 |
| JPH05189960A (ja) | 1992-01-10 | 1993-07-30 | Sharp Corp | 半導体記憶装置 |
| JPH0684353A (ja) * | 1992-09-02 | 1994-03-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5471431A (en) * | 1993-04-22 | 1995-11-28 | Sgs-Thomson Microelectronics, Inc. | Structure to recover a portion of a partially functional embedded memory |
| US5410510A (en) | 1993-10-04 | 1995-04-25 | Texas Instruments Inc. | Process of making and a DRAM standby charge pump with oscillator having fuse selectable frequencies |
| US5449214A (en) * | 1993-10-27 | 1995-09-12 | Totani; Hideo | Safety system for an occupant of an automotive vehicle |
| JP3714696B2 (ja) * | 1994-10-21 | 2005-11-09 | 富士通株式会社 | 半導体記憶装置 |
| JP3315842B2 (ja) | 1995-09-26 | 2002-08-19 | 富士通株式会社 | 半導体集積回路装置 |
| KR100192574B1 (ko) * | 1995-10-04 | 1999-06-15 | 윤종용 | 디코디드 퓨즈를 사용한 반도체 메모리 장치의 컬럼 리던던시 회로 |
| KR100197562B1 (ko) * | 1995-12-23 | 1999-06-15 | 윤종용 | 셀프 리프레쉬 주기를 조정할 수 있는 반도체 메모리장치 |
-
1997
- 1997-12-25 JP JP9357643A patent/JPH11185469A/ja active Pending
-
1998
- 1998-04-20 US US09/062,590 patent/US6366517B1/en not_active Expired - Fee Related
- 1998-05-26 TW TW087108118A patent/TW382708B/zh not_active IP Right Cessation
- 1998-09-18 KR KR10-1998-0038666A patent/KR100368095B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990062503A (ko) | 1999-07-26 |
| US6366517B1 (en) | 2002-04-02 |
| KR100368095B1 (ko) | 2003-03-17 |
| JPH11185469A (ja) | 1999-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |