KR100368095B1 - 회로특성을용이하게조절할수있는반도체집적회로 - Google Patents

회로특성을용이하게조절할수있는반도체집적회로 Download PDF

Info

Publication number
KR100368095B1
KR100368095B1 KR10-1998-0038666A KR19980038666A KR100368095B1 KR 100368095 B1 KR100368095 B1 KR 100368095B1 KR 19980038666 A KR19980038666 A KR 19980038666A KR 100368095 B1 KR100368095 B1 KR 100368095B1
Authority
KR
South Korea
Prior art keywords
circuit
signal
fuse
period
counter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1998-0038666A
Other languages
English (en)
Korean (ko)
Other versions
KR19990062503A (ko
Inventor
미쯔노리 쯔지노
고로 하야까와
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR19990062503A publication Critical patent/KR19990062503A/ko
Application granted granted Critical
Publication of KR100368095B1 publication Critical patent/KR100368095B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR10-1998-0038666A 1997-12-25 1998-09-18 회로특성을용이하게조절할수있는반도체집적회로 Expired - Fee Related KR100368095B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9357643A JPH11185469A (ja) 1997-12-25 1997-12-25 半導体集積回路
JP97-357643 1997-12-25

Publications (2)

Publication Number Publication Date
KR19990062503A KR19990062503A (ko) 1999-07-26
KR100368095B1 true KR100368095B1 (ko) 2003-03-17

Family

ID=18455171

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0038666A Expired - Fee Related KR100368095B1 (ko) 1997-12-25 1998-09-18 회로특성을용이하게조절할수있는반도체집적회로

Country Status (4)

Country Link
US (1) US6366517B1 (enExample)
JP (1) JPH11185469A (enExample)
KR (1) KR100368095B1 (enExample)
TW (1) TW382708B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6940773B2 (en) * 2003-04-02 2005-09-06 Infineon Technologies Ag Method and system for manufacturing DRAMs with reduced self-refresh current requirements
TWI262504B (en) * 2003-04-15 2006-09-21 Ibm Dynamic semiconductor memory device
US20050068829A1 (en) * 2003-09-25 2005-03-31 Infineon Technologies North America Corp. Refresh rate adjustment
CN111953343B (zh) * 2020-09-07 2023-05-30 北京中科芯蕊科技有限公司 一种数字控制的亚阈值环形振荡器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684353A (ja) * 1992-09-02 1994-03-25 Mitsubishi Electric Corp 半導体記憶装置
US5311476A (en) * 1989-03-20 1994-05-10 Hitachi, Ltd. Semiconductor memory, components and layout arrangements thereof, and method of testing the memory
US5410510A (en) * 1993-10-04 1995-04-25 Texas Instruments Inc. Process of making and a DRAM standby charge pump with oscillator having fuse selectable frequencies
JPH09282871A (ja) * 1995-12-23 1997-10-31 Samsung Electron Co Ltd セルフリフレッシュ周期を調節し得る半導体メモリ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH052878A (ja) 1991-06-26 1993-01-08 Nec Corp リフレツシユ制御回路
JPH05189960A (ja) 1992-01-10 1993-07-30 Sharp Corp 半導体記憶装置
US5471431A (en) * 1993-04-22 1995-11-28 Sgs-Thomson Microelectronics, Inc. Structure to recover a portion of a partially functional embedded memory
US5449214A (en) * 1993-10-27 1995-09-12 Totani; Hideo Safety system for an occupant of an automotive vehicle
JP3714696B2 (ja) * 1994-10-21 2005-11-09 富士通株式会社 半導体記憶装置
JP3315842B2 (ja) 1995-09-26 2002-08-19 富士通株式会社 半導体集積回路装置
KR100192574B1 (ko) * 1995-10-04 1999-06-15 윤종용 디코디드 퓨즈를 사용한 반도체 메모리 장치의 컬럼 리던던시 회로

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311476A (en) * 1989-03-20 1994-05-10 Hitachi, Ltd. Semiconductor memory, components and layout arrangements thereof, and method of testing the memory
JPH0684353A (ja) * 1992-09-02 1994-03-25 Mitsubishi Electric Corp 半導体記憶装置
US5410510A (en) * 1993-10-04 1995-04-25 Texas Instruments Inc. Process of making and a DRAM standby charge pump with oscillator having fuse selectable frequencies
JPH09282871A (ja) * 1995-12-23 1997-10-31 Samsung Electron Co Ltd セルフリフレッシュ周期を調節し得る半導体メモリ装置

Also Published As

Publication number Publication date
US6366517B1 (en) 2002-04-02
JPH11185469A (ja) 1999-07-09
KR19990062503A (ko) 1999-07-26
TW382708B (en) 2000-02-21

Similar Documents

Publication Publication Date Title
US5933383A (en) DRAM having a power supply voltage lowering circuit
US6885605B2 (en) Power-up signal generator for semiconductor memory devices
KR100549621B1 (ko) 셀프 리프래쉬용 오실레이터
US20020000873A1 (en) Semiconductor device having hierarchical power supply line structure improved in operating speed
US20040001386A1 (en) Deep power down control circuit
KR20000035216A (ko) 용장 회로를 갖는 반도체 메모리 장치
KR100306327B1 (ko) 반도체장치
KR100611506B1 (ko) 반도체 메모리 장치의 디커플링 커패시턴스 조절회로
US6404687B2 (en) Semiconductor integrated circuit having a self-refresh function
US5956278A (en) Semiconductor circuit device with internal power supply circuit
US5812475A (en) Programmable refresh circuits and methods for integrated circuit memory devices
KR100282049B1 (ko) 내부 전원 회로를 갖는 반도체 회로 장치
US6424593B1 (en) Semiconductor memory device capable of adjusting internal parameter
KR100368095B1 (ko) 회로특성을용이하게조절할수있는반도체집적회로
US20040246045A1 (en) Voltage and time control circuits and methods of operating the same
JPH10241395A (ja) 冗長回路を備えた半導体メモリ装置
KR100383882B1 (ko) 주기선택회로 및 이를 이용한 반도체메모리저장장치
US6404688B2 (en) Semiconductor memory device having a self-refresh operation
JP3892692B2 (ja) 半導体集積回路
JPH1055693A (ja) 冗長デコーダ回路
JP2000030438A (ja) 同期型半導体記憶装置
JP3022415B2 (ja) プログラマブルバッファ回路
KR100745947B1 (ko) 셀프 리프레쉬 장치_
KR100311216B1 (ko) 스탠바이 전류의 흐름을 차단시키기 위한 메모리 소자의 리페어 회로
KR100245274B1 (ko) Sram 장치의 리던던트 프리디코더 회로

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20090102

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20100103

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20100103