JPH11102864A5 - - Google Patents

Info

Publication number
JPH11102864A5
JPH11102864A5 JP1997260316A JP26031697A JPH11102864A5 JP H11102864 A5 JPH11102864 A5 JP H11102864A5 JP 1997260316 A JP1997260316 A JP 1997260316A JP 26031697 A JP26031697 A JP 26031697A JP H11102864 A5 JPH11102864 A5 JP H11102864A5
Authority
JP
Japan
Prior art keywords
average grain
glass substrate
grain size
areas
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997260316A
Other languages
English (en)
Japanese (ja)
Other versions
JP4112655B2 (ja
JPH11102864A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP26031697A priority Critical patent/JP4112655B2/ja
Priority claimed from JP26031697A external-priority patent/JP4112655B2/ja
Priority to TW087115897A priority patent/TW525024B/zh
Priority to US09/160,360 priority patent/US6194023B1/en
Priority to KR1019980040420A priority patent/KR100302203B1/ko
Publication of JPH11102864A publication Critical patent/JPH11102864A/ja
Publication of JPH11102864A5 publication Critical patent/JPH11102864A5/ja
Application granted granted Critical
Publication of JP4112655B2 publication Critical patent/JP4112655B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP26031697A 1997-09-25 1997-09-25 多結晶薄膜の製造方法 Expired - Fee Related JP4112655B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP26031697A JP4112655B2 (ja) 1997-09-25 1997-09-25 多結晶薄膜の製造方法
TW087115897A TW525024B (en) 1997-09-25 1998-09-24 Method of manufacturing poly-crystalline silicon film
US09/160,360 US6194023B1 (en) 1997-09-25 1998-09-25 Method of manufacturing a poly-crystalline silicon film
KR1019980040420A KR100302203B1 (ko) 1997-09-25 1998-09-25 다결정실리콘박막의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26031697A JP4112655B2 (ja) 1997-09-25 1997-09-25 多結晶薄膜の製造方法

Publications (3)

Publication Number Publication Date
JPH11102864A JPH11102864A (ja) 1999-04-13
JPH11102864A5 true JPH11102864A5 (enExample) 2005-06-16
JP4112655B2 JP4112655B2 (ja) 2008-07-02

Family

ID=17346335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26031697A Expired - Fee Related JP4112655B2 (ja) 1997-09-25 1997-09-25 多結晶薄膜の製造方法

Country Status (4)

Country Link
US (1) US6194023B1 (enExample)
JP (1) JP4112655B2 (enExample)
KR (1) KR100302203B1 (enExample)
TW (1) TW525024B (enExample)

Families Citing this family (17)

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Publication number Priority date Publication date Assignee Title
US6329270B1 (en) * 1997-03-07 2001-12-11 Sharp Laboratories Of America, Inc. Laser annealed microcrystalline film and method for same
JP2001053020A (ja) * 1999-08-06 2001-02-23 Sony Corp 半導体薄膜の結晶化方法及び薄膜半導体装置の製造方法
KR100671212B1 (ko) 1999-12-31 2007-01-18 엘지.필립스 엘시디 주식회사 폴리실리콘 형성방법
US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
JP2003124543A (ja) * 2001-08-09 2003-04-25 Sony Corp フラクタル構造体およびその形成方法ならびに機能材料およびその形成方法ならびに機能素子およびその形成方法
JP5091378B2 (ja) * 2001-08-17 2012-12-05 株式会社ジャパンディスプレイセントラル レーザアニール方法及びレーザアニール条件決定装置
KR100493156B1 (ko) * 2002-06-05 2005-06-03 삼성전자주식회사 나노입자를 이용한 비정질 실리콘의 결정화 방법
TW569351B (en) * 2002-11-22 2004-01-01 Au Optronics Corp Excimer laser anneal apparatus and the application of the same
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
JP4935059B2 (ja) * 2005-02-17 2012-05-23 三菱電機株式会社 半導体装置の製造方法
US20070044832A1 (en) * 2005-08-25 2007-03-01 Fritzemeier Leslie G Photovoltaic template
KR100805155B1 (ko) * 2006-09-15 2008-02-21 삼성에스디아이 주식회사 박막 트랜지스터를 구비한 유기 전계 발광 표시 장치 및 그제조방법
KR100878159B1 (ko) * 2007-04-19 2009-01-13 주식회사 코윈디에스티 레이저 가공장치
US20090114274A1 (en) * 2007-11-02 2009-05-07 Fritzemeier Leslie G Crystalline thin-film photovoltaic structures
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
US8415187B2 (en) * 2009-01-28 2013-04-09 Solexant Corporation Large-grain crystalline thin-film structures and devices and methods for forming the same
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
JPS57156320A (en) * 1981-03-17 1982-09-27 Chiyoda Chem Eng & Constr Co Ltd Production of formed body mainly composed of zeolite
JPS5821319A (ja) * 1981-07-30 1983-02-08 Fujitsu Ltd レ−ザアニ−ル方法
US4466179A (en) 1982-10-19 1984-08-21 Harris Corporation Method for providing polysilicon thin films of improved uniformity
US4536231A (en) 1982-10-19 1985-08-20 Harris Corporation Polysilicon thin films of improved electrical uniformity
JPS6476715A (en) 1987-09-17 1989-03-22 Nec Corp Manufacture of polycrystalline semiconductor thin film
JP2995736B2 (ja) 1988-12-28 1999-12-27 ソニー株式会社 光ビームアニーリング装置
JP3033120B2 (ja) 1990-04-02 2000-04-17 セイコーエプソン株式会社 半導体薄膜の製造方法
JPH04152624A (ja) * 1990-10-17 1992-05-26 Seiko Epson Corp 薄膜半導体装置の製造方法
US5372836A (en) * 1992-03-27 1994-12-13 Tokyo Electron Limited Method of forming polycrystalling silicon film in process of manufacturing LCD
US5481121A (en) * 1993-05-26 1996-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
KR100299292B1 (ko) * 1993-11-02 2001-12-01 이데이 노부유끼 다결정실리콘박막형성방법및그표면처리장치
EP0659911A1 (en) * 1993-12-23 1995-06-28 International Business Machines Corporation Method to form a polycrystalline film on a substrate
US6059873A (en) * 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
TW303526B (enExample) * 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
GB9624715D0 (en) * 1996-11-28 1997-01-15 Philips Electronics Nv Electronic device manufacture

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