JPH1092685A5 - - Google Patents

Info

Publication number
JPH1092685A5
JPH1092685A5 JP1997231920A JP23192097A JPH1092685A5 JP H1092685 A5 JPH1092685 A5 JP H1092685A5 JP 1997231920 A JP1997231920 A JP 1997231920A JP 23192097 A JP23192097 A JP 23192097A JP H1092685 A5 JPH1092685 A5 JP H1092685A5
Authority
JP
Japan
Prior art keywords
capacitors
capacitor
ceramic
mol
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997231920A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1092685A (ja
Filing date
Publication date
Priority claimed from DE19635406A external-priority patent/DE19635406B4/de
Application filed filed Critical
Publication of JPH1092685A publication Critical patent/JPH1092685A/ja
Publication of JPH1092685A5 publication Critical patent/JPH1092685A5/ja
Pending legal-status Critical Current

Links

JP9231920A 1996-08-31 1997-08-28 タングステン含有ＢａＴｉＯ３ を含んで構成される多重層キャパシタ Pending JPH1092685A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19635406A DE19635406B4 (de) 1996-08-31 1996-08-31 Kondensator und Vielschichtkondensator mit einem Dielektrium aus wolframhaltiger BCZT-Keramik
DE19635406:4 1996-08-31

Publications (2)

Publication Number Publication Date
JPH1092685A JPH1092685A (ja) 1998-04-10
JPH1092685A5 true JPH1092685A5 (enExample) 2005-06-09

Family

ID=7804301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9231920A Pending JPH1092685A (ja) 1996-08-31 1997-08-28 タングステン含有ＢａＴｉＯ３ を含んで構成される多重層キャパシタ

Country Status (4)

Country Link
US (1) US5889647A (enExample)
EP (1) EP0827166A1 (enExample)
JP (1) JPH1092685A (enExample)
DE (1) DE19635406B4 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3031268B2 (ja) * 1996-11-20 2000-04-10 株式会社村田製作所 磁器コンデンサ
DE19737324A1 (de) * 1997-08-28 1999-03-04 Philips Patentverwaltung Vielschichtkondensator mit silber- und seltenerdmetalldotiertem Bariumtitanat
US6281142B1 (en) * 1999-06-04 2001-08-28 Micron Technology, Inc. Dielectric cure for reducing oxygen vacancies
JP3506056B2 (ja) * 1999-08-09 2004-03-15 株式会社村田製作所 正の抵抗温度特性を有する積層型半導体セラミック素子、および正の抵抗温度特性を有する積層型半導体セラミック素子の製造方法
DE19939483A1 (de) * 1999-08-20 2001-03-08 Philips Corp Intellectual Pty Passives Bauelement mit Verbundwerkstoff
US6337237B1 (en) * 1999-09-01 2002-01-08 Micron Technology, Inc. Capacitor processing method and DRAM processing method
DE19952134A1 (de) * 1999-10-29 2001-05-03 Philips Corp Intellectual Pty Kondensator mit BCZT-Dielektrikum
JP3361091B2 (ja) * 2000-06-20 2003-01-07 ティーディーケイ株式会社 誘電体磁器および電子部品
WO2002084683A1 (en) * 2001-04-12 2002-10-24 Tdk Corporation Production method of laminate ceramic electronic component
US7914755B2 (en) * 2001-04-12 2011-03-29 Eestor, Inc. Method of preparing ceramic powders using chelate precursors
JP4446324B2 (ja) * 2001-09-27 2010-04-07 株式会社村田製作所 誘電体磁器組成物及びそれを用いたコンデンサ
KR100466072B1 (ko) * 2002-05-24 2005-01-13 삼성전기주식회사 적층 세라믹 콘덴서용 유전체 조성물 및 이를 이용한 적층세라믹 콘덴서
KR100506731B1 (ko) * 2002-12-24 2005-08-08 삼성전기주식회사 저온 소성 유전체 조성물, 적층 세라믹 커패시터 및세라믹 전자부품
JP2005057174A (ja) * 2003-08-07 2005-03-03 Matsushita Electric Ind Co Ltd セラミック電子部品の製造方法
US7218504B2 (en) * 2004-03-02 2007-05-15 Intel Corporation Capacitor device and method
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US20060099803A1 (en) * 2004-10-26 2006-05-11 Yongki Min Thin film capacitor
US20060091495A1 (en) * 2004-10-29 2006-05-04 Palanduz Cengiz A Ceramic thin film on base metal electrode
US7375412B1 (en) * 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US7629269B2 (en) * 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
US8623737B2 (en) * 2006-03-31 2014-01-07 Intel Corporation Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
US7993611B2 (en) 2006-08-02 2011-08-09 Eestor, Inc. Method of preparing ceramic powders using ammonium oxalate
US8853116B2 (en) 2006-08-02 2014-10-07 Eestor, Inc. Method of preparing ceramic powders
WO2010089241A1 (de) 2009-02-04 2010-08-12 Basf Se Schwarze, uv-stabile thermoplastische formmassen
US7987566B2 (en) * 2009-07-15 2011-08-02 Sturzebecher Richard J Capacitor forming method
KR102762893B1 (ko) * 2018-12-12 2025-02-07 삼성전기주식회사 적층 세라믹 전자부품
CN118184348A (zh) * 2024-04-07 2024-06-14 西安交通大学 一种兼具高储能密度和高储能效率的钛酸钡基陶瓷材料及其制备方法和用途

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61250905A (ja) * 1985-04-26 1986-11-08 ティーディーケイ株式会社 誘電体磁器組成物及びその製造法
MX172902B (es) * 1986-05-05 1994-01-20 Cabot Corp Coformas de titanato de bario
DE3723082C2 (de) * 1986-07-14 2003-09-25 Cabot Corp Verfahren zur Herstellung von submikronen Perovskiten
ES2006956A6 (es) * 1987-08-12 1989-05-16 Cabot Corp Coformas de titanato de bario dopado.
JP2529410B2 (ja) * 1989-09-25 1996-08-28 松下電器産業株式会社 誘電体磁器組成物とそれを用いた積層セラミックコンデンサとその製造方法
JPH0779004B2 (ja) * 1990-10-31 1995-08-23 株式会社村田製作所 誘電体磁器組成物
JP2952062B2 (ja) * 1991-02-18 1999-09-20 ティーディーケイ株式会社 非還元性誘電体磁器組成物
US5319517A (en) * 1992-03-27 1994-06-07 Tdk Corporation Multilayer ceramic chip capacitor

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