JPH1092685A - タングステン含有ＢａＴｉＯ３ を含んで構成される多重層キャパシタ - Google Patents
タングステン含有ＢａＴｉＯ３ を含んで構成される多重層キャパシタInfo
- Publication number
- JPH1092685A JPH1092685A JP9231920A JP23192097A JPH1092685A JP H1092685 A JPH1092685 A JP H1092685A JP 9231920 A JP9231920 A JP 9231920A JP 23192097 A JP23192097 A JP 23192097A JP H1092685 A JPH1092685 A JP H1092685A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- mol
- doped
- nickel
- formula unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 67
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 14
- 239000010937 tungsten Substances 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 title description 9
- 239000000203 mixture Substances 0.000 claims abstract description 67
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000919 ceramic Substances 0.000 claims abstract description 36
- 239000003989 dielectric material Substances 0.000 claims abstract description 27
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 19
- LVZCQZOALBUKMO-UHFFFAOYSA-N [Zr].[Ca].[Ba] Chemical compound [Zr].[Ca].[Ba] LVZCQZOALBUKMO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims abstract description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims abstract description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 3
- 238000005245 sintering Methods 0.000 claims description 38
- 239000011575 calcium Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 5
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 10
- 239000011888 foil Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 20
- 238000000227 grinding Methods 0.000 description 18
- 238000005496 tempering Methods 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 239000000725 suspension Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000011230 binding agent Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 description 7
- 239000002270 dispersing agent Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 239000010953 base metal Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000000084 colloidal system Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- 238000010345 tape casting Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000003985 ceramic capacitor Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- -1 barium calcium zirconium oxide Chemical compound 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- GLDUZMNCEGHSBP-UHFFFAOYSA-N 2-(2-octylphenoxy)ethanol Chemical compound CCCCCCCCC1=CC=CC=C1OCCO GLDUZMNCEGHSBP-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- YIMPFANPVKETMG-UHFFFAOYSA-N barium zirconium Chemical compound [Zr].[Ba] YIMPFANPVKETMG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19635406A DE19635406B4 (de) | 1996-08-31 | 1996-08-31 | Kondensator und Vielschichtkondensator mit einem Dielektrium aus wolframhaltiger BCZT-Keramik |
| DE19635406:4 | 1996-08-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1092685A true JPH1092685A (ja) | 1998-04-10 |
| JPH1092685A5 JPH1092685A5 (enExample) | 2005-06-09 |
Family
ID=7804301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9231920A Pending JPH1092685A (ja) | 1996-08-31 | 1997-08-28 | タングステン含有ＢａＴｉＯ３ を含んで構成される多重層キャパシタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5889647A (enExample) |
| EP (1) | EP0827166A1 (enExample) |
| JP (1) | JPH1092685A (enExample) |
| DE (1) | DE19635406B4 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010089241A1 (de) | 2009-02-04 | 2010-08-12 | Basf Se | Schwarze, uv-stabile thermoplastische formmassen |
| US7914755B2 (en) * | 2001-04-12 | 2011-03-29 | Eestor, Inc. | Method of preparing ceramic powders using chelate precursors |
| US7993611B2 (en) | 2006-08-02 | 2011-08-09 | Eestor, Inc. | Method of preparing ceramic powders using ammonium oxalate |
| US8853116B2 (en) | 2006-08-02 | 2014-10-07 | Eestor, Inc. | Method of preparing ceramic powders |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3031268B2 (ja) * | 1996-11-20 | 2000-04-10 | 株式会社村田製作所 | 磁器コンデンサ |
| DE19737324A1 (de) * | 1997-08-28 | 1999-03-04 | Philips Patentverwaltung | Vielschichtkondensator mit silber- und seltenerdmetalldotiertem Bariumtitanat |
| US6281142B1 (en) * | 1999-06-04 | 2001-08-28 | Micron Technology, Inc. | Dielectric cure for reducing oxygen vacancies |
| JP3506056B2 (ja) * | 1999-08-09 | 2004-03-15 | 株式会社村田製作所 | 正の抵抗温度特性を有する積層型半導体セラミック素子、および正の抵抗温度特性を有する積層型半導体セラミック素子の製造方法 |
| DE19939483A1 (de) * | 1999-08-20 | 2001-03-08 | Philips Corp Intellectual Pty | Passives Bauelement mit Verbundwerkstoff |
| US6337237B1 (en) * | 1999-09-01 | 2002-01-08 | Micron Technology, Inc. | Capacitor processing method and DRAM processing method |
| DE19952134A1 (de) * | 1999-10-29 | 2001-05-03 | Philips Corp Intellectual Pty | Kondensator mit BCZT-Dielektrikum |
| JP3361091B2 (ja) * | 2000-06-20 | 2003-01-07 | ティーディーケイ株式会社 | 誘電体磁器および電子部品 |
| WO2002084683A1 (en) * | 2001-04-12 | 2002-10-24 | Tdk Corporation | Production method of laminate ceramic electronic component |
| JP4446324B2 (ja) * | 2001-09-27 | 2010-04-07 | 株式会社村田製作所 | 誘電体磁器組成物及びそれを用いたコンデンサ |
| KR100466072B1 (ko) * | 2002-05-24 | 2005-01-13 | 삼성전기주식회사 | 적층 세라믹 콘덴서용 유전체 조성물 및 이를 이용한 적층세라믹 콘덴서 |
| KR100506731B1 (ko) * | 2002-12-24 | 2005-08-08 | 삼성전기주식회사 | 저온 소성 유전체 조성물, 적층 세라믹 커패시터 및세라믹 전자부품 |
| JP2005057174A (ja) * | 2003-08-07 | 2005-03-03 | Matsushita Electric Ind Co Ltd | セラミック電子部品の製造方法 |
| US7218504B2 (en) * | 2004-03-02 | 2007-05-15 | Intel Corporation | Capacitor device and method |
| US20060000542A1 (en) * | 2004-06-30 | 2006-01-05 | Yongki Min | Metal oxide ceramic thin film on base metal electrode |
| US7290315B2 (en) * | 2004-10-21 | 2007-11-06 | Intel Corporation | Method for making a passive device structure |
| US20060099803A1 (en) * | 2004-10-26 | 2006-05-11 | Yongki Min | Thin film capacitor |
| US20060091495A1 (en) * | 2004-10-29 | 2006-05-04 | Palanduz Cengiz A | Ceramic thin film on base metal electrode |
| US7375412B1 (en) * | 2005-03-31 | 2008-05-20 | Intel Corporation | iTFC with optimized C(T) |
| US7629269B2 (en) * | 2005-03-31 | 2009-12-08 | Intel Corporation | High-k thin film grain size control |
| US20060220177A1 (en) * | 2005-03-31 | 2006-10-05 | Palanduz Cengiz A | Reduced porosity high-k thin film mixed grains for thin film capacitor applications |
| US7453144B2 (en) * | 2005-06-29 | 2008-11-18 | Intel Corporation | Thin film capacitors and methods of making the same |
| US8623737B2 (en) * | 2006-03-31 | 2014-01-07 | Intel Corporation | Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same |
| US7987566B2 (en) * | 2009-07-15 | 2011-08-02 | Sturzebecher Richard J | Capacitor forming method |
| KR102762893B1 (ko) * | 2018-12-12 | 2025-02-07 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
| CN118184348A (zh) * | 2024-04-07 | 2024-06-14 | 西安交通大学 | 一种兼具高储能密度和高储能效率的钛酸钡基陶瓷材料及其制备方法和用途 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61250905A (ja) * | 1985-04-26 | 1986-11-08 | ティーディーケイ株式会社 | 誘電体磁器組成物及びその製造法 |
| MX172902B (es) * | 1986-05-05 | 1994-01-20 | Cabot Corp | Coformas de titanato de bario |
| DE3723082C2 (de) * | 1986-07-14 | 2003-09-25 | Cabot Corp | Verfahren zur Herstellung von submikronen Perovskiten |
| ES2006956A6 (es) * | 1987-08-12 | 1989-05-16 | Cabot Corp | Coformas de titanato de bario dopado. |
| JP2529410B2 (ja) * | 1989-09-25 | 1996-08-28 | 松下電器産業株式会社 | 誘電体磁器組成物とそれを用いた積層セラミックコンデンサとその製造方法 |
| JPH0779004B2 (ja) * | 1990-10-31 | 1995-08-23 | 株式会社村田製作所 | 誘電体磁器組成物 |
| JP2952062B2 (ja) * | 1991-02-18 | 1999-09-20 | ティーディーケイ株式会社 | 非還元性誘電体磁器組成物 |
| US5319517A (en) * | 1992-03-27 | 1994-06-07 | Tdk Corporation | Multilayer ceramic chip capacitor |
-
1996
- 1996-08-31 DE DE19635406A patent/DE19635406B4/de not_active Expired - Fee Related
-
1997
- 1997-08-21 EP EP97202578A patent/EP0827166A1/de not_active Withdrawn
- 1997-08-26 US US08/918,847 patent/US5889647A/en not_active Expired - Fee Related
- 1997-08-28 JP JP9231920A patent/JPH1092685A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7914755B2 (en) * | 2001-04-12 | 2011-03-29 | Eestor, Inc. | Method of preparing ceramic powders using chelate precursors |
| US7993611B2 (en) | 2006-08-02 | 2011-08-09 | Eestor, Inc. | Method of preparing ceramic powders using ammonium oxalate |
| US8853116B2 (en) | 2006-08-02 | 2014-10-07 | Eestor, Inc. | Method of preparing ceramic powders |
| US10239792B2 (en) | 2006-08-02 | 2019-03-26 | Eestor, Inc. | Method of preparing ceramic powders |
| WO2010089241A1 (de) | 2009-02-04 | 2010-08-12 | Basf Se | Schwarze, uv-stabile thermoplastische formmassen |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0827166A1 (de) | 1998-03-04 |
| DE19635406B4 (de) | 2005-09-01 |
| DE19635406A1 (de) | 1998-03-05 |
| US5889647A (en) | 1999-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3592097B2 (ja) | 銀及び希土類金属を用いてドープしたバリウム−チタネートを含有する多層キャパシタ | |
| JPH1092685A (ja) | タングステン含有ＢａＴｉＯ３ を含んで構成される多重層キャパシタ | |
| JPH1092685A5 (enExample) | ||
| US5790367A (en) | Multilayer capacitor comprising a dielectric of modified barium strontium titanate | |
| EP0814486B1 (en) | Dielectric ceramic composition and monolithic ceramic capacitor using same | |
| KR102442888B1 (ko) | 적층 세라믹 콘덴서 및 그 제조 방법 | |
| KR102417726B1 (ko) | 적층 세라믹 콘덴서 및 그 제조 방법 | |
| US20020137622A1 (en) | Dielectric ceramic composition and multilayer ceramic capacitor used the same | |
| CN115148499A (zh) | 陶瓷电子器件及其制造方法 | |
| US4477401A (en) | Method of manufacturing a dielectric | |
| JP2003526201A (ja) | Ｂｃｚｔ誘電体を伴うキャパシタ | |
| US6631070B2 (en) | Ceramic capacitor with czt dielectric | |
| US4612600A (en) | Low fire ceramic compositions | |
| JP2002087879A (ja) | 誘電体磁器組成物及びこれを用いた積層セラミックコンデンサ | |
| JP2019102655A (ja) | セラミックコンデンサおよびその製造方法 | |
| JPH1126276A (ja) | コンデンサ | |
| KR100380720B1 (ko) | 유전체 세라믹 조성물 및 이를 이용한 적층 세라믹 커패시터 | |
| JP2002134350A (ja) | 積層セラミックコンデンサおよびその製造方法 | |
| JP2005158895A (ja) | 粒界絶縁型半導体セラミックス及び積層半導体コンデンサ | |
| JP3316717B2 (ja) | 積層セラミックコンデンサ | |
| US20250259790A1 (en) | Multilayer ceramic capacitor | |
| US20230395325A1 (en) | Dielectric powder, multilayer ceramic electronic device, manufacturing method of dielectric powder and manufacturing method of multilayer ceramic electronic device | |
| JP3600701B2 (ja) | 誘電体磁器組成物 | |
| JPH1197279A (ja) | 耐還元性誘電体組成物の製造方法および積層セラミックコンデンサ | |
| JP3438334B2 (ja) | 非還元性誘電体磁器組成物 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040830 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040830 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060929 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061010 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070110 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070111 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070116 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070410 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20070410 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070529 |