CN116487186A - 多层陶瓷电容器 - Google Patents

多层陶瓷电容器 Download PDF

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Publication number
CN116487186A
CN116487186A CN202310662064.7A CN202310662064A CN116487186A CN 116487186 A CN116487186 A CN 116487186A CN 202310662064 A CN202310662064 A CN 202310662064A CN 116487186 A CN116487186 A CN 116487186A
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China
Prior art keywords
dielectric
main component
subcomponent
multilayer ceramic
ceramic capacitor
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CN202310662064.7A
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English (en)
Inventor
金亨旭
白承仁
权亨纯
赵志弘
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Publication of CN116487186A publication Critical patent/CN116487186A/zh
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    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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    • H01G4/302—Stacked capacitors obtained by injection of metal in cavities formed in a ceramic body
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Abstract

提供了一种多层陶瓷电容器。所述多层陶瓷电容器包括：陶瓷主体，包括介电层以及被设置为彼此面对且相应介电层介于它们之间的第一内电极和第二内电极；以及第一外电极和第二外电极，设置在所述陶瓷主体的外表面上，所述第一外电极电连接到所述第一内电极，并且所述第二外电极电连接到所述第二内电极，其中，所述介电层包括包含介电陶瓷组合物的介电晶粒，所述介电陶瓷组合物包括钛酸钡基体材料主成分以及副成分，所述副成分包括Dy和Nb作为第一副成分，其中，基于100mol的所述钛酸钡基体材料主成分的Ti，Dy和Nb的总含量为大于0.2mol且小于或等于1.5mol，并且其中，所述介电层的厚度为0.4μm或更小。

Description

多层陶瓷电容器
本申请是申请日为2020年04月27日、申请号为202010341760.4的发明专利申请“介电陶瓷组合物及包括其的多层陶瓷电容器”的分案申请。
技术领域
本公开涉及一种具有改善的可靠性的介电陶瓷组合物和包括该介电陶瓷组合物的多层陶瓷电容器。
背景技术
通常，诸如电容器、电感器、压电元件、压敏电阻、热敏电阻等的使用陶瓷材料的电子组件包括利用陶瓷材料形成的陶瓷主体、形成在陶瓷主体中的内电极以及安装在陶瓷主体的表面上以连接到内电极的外电极。
近来，由于电子产品与片式组件一起被小型化和多功能化的趋势，需要尺寸更小但容量更大的多层陶瓷电容器。
用于使多层陶瓷电容器小型化并同时增加其容量的方法是减小介电层和内电极层的厚度以层叠更多数量的层。目前，介电层的厚度为约0.6μm，并且已经在努力开发更薄的介电层。
在这种情况下，确保介电层的可靠性成为介电材料的主要问题。另外，由于介电材料的绝缘电阻的劣化增加，在管理质量和良率上的困难已经成为问题。
为了解决这种问题，需要开发一种不仅在多层陶瓷电容器的结构方面而且在电介质的成分方面都确保高可靠性的新方法。
当确保能够改善电流可靠性的介电组合物时，可制造更薄的多层陶瓷电容器。
发明内容
本公开的一方面提供一种具有改善的可靠性的介电陶瓷组合物以及包括该介电陶瓷组合物的多层陶瓷电容器。
根据本公开的一方面，一种介电陶瓷组合物包括：钛酸钡(BaTiO3)基基体材料主成分以及副成分，其中，所述副成分包括镝(Dy)和铌(Nb)作为第一副成分。基于100mol的所述钛酸钡(BaTiO3)基基体材料主成分的钛(Ti)，Dy和Nb的总含量为大于0.2mol且小于或等于1.5mol。
根据本公开的另一方面，一种多层陶瓷电容器包括：陶瓷主体，包括介电层以及被设置为彼此面对且相应介电层介于它们之间的第一内电极和第二内电极；以及第一外电极和第二外电极，设置在所述陶瓷主体的外表面上，其中，所述第一外电极电连接到所述第一内电极，并且所述第二外电极电连接到所述第二内电极。所述介电层包括包含介电陶瓷组合物的介电晶粒，所述介电陶瓷组合物包括BaTiO3基基体材料主成分以及副成分，其中，所述副成分包括Dy和Nb作为第一副成分。基于100mol的所述钛酸钡(BaTiO3)基基体材料主成分的Ti，Dy和Nb的总含量为大于0.2mol且小于或等于1.5mol。
附图说明
通过以下结合附图进行的详细描述，本公开的以上和其他方面、特征及优点将被更清楚地理解，在附图中：
图1是根据本公开的实施例的多层陶瓷电容器的示意性透视图；
图2是沿图1中的线I-I'截取的截面图；
图3A至图3C是根据本公开的实施例示例和比较示例的高加速寿命测试(HALT)测试结果的曲线图；并且
图4A至图4E是根据本公开的实施例示例和比较示例的HALT测试结果的曲线图。
具体实施方式
在下文中，将参照附图如下描述本公开的实施例。然而，本公开可以以许多不同的形式实施，并且不应被解释为限于在此阐述的实施例。确切地说，提供这些实施例使得本公开将是彻底的和完整的，并将向本领域技术人员充分传达本公开的范围。在附图中，为了清楚起见，可夸大元件的形状和尺寸，并且相同的附图标记将始终用于表示相同或相似的元件。
图1是根据本公开的实施例的多层陶瓷电容器的示意性透视图。
图2是沿图1中的线I-I'截取的截面图。
参照图1和图2，根据实施例的多层陶瓷电容器100包括：陶瓷主体110，包括介电层111以及被设置为彼此面对且相应介电层介于它们之间的第一内电极121和第二内电极122；以及第一外电极131和第二外电极132，设置在陶瓷主体110的外表面上。第一外电极131电连接到第一内电极121，第二外电极132电连接到第二内电极122。
关于根据实施例的多层陶瓷电容器100，图1的“长度方向”、“宽度方向”和“厚度方向”被分别定义为“L”方向、“W”方向和“T”方向。“厚度方向”可以以与堆叠介电层所沿的方向(例如，“层叠方向”)相同的含义被使用。
尽管不受特别限制，但是陶瓷主体110的构造可以是如图所示的长方体形状。
形成在陶瓷主体110内部的多个第一内电极121和多个第二内电极122具有暴露于陶瓷主体110的一个表面或陶瓷主体110的与所述一个表面相对设置的另一表面的一端。
内电极可包括成对的具有不同极性的第一内电极121和第二内电极122。
第一内电极121的一端可暴露于陶瓷主体的一个表面，第二内电极122的一端可暴露于陶瓷主体的与所述一个表面相对设置的另一表面。
第一外电极131和第二外电极132分别形成在陶瓷主体110的一个表面和与所述一个表面相对设置的另一表面上，以电连接到内电极。
第一内电极121和第二内电极122的材料不受特别限制，并且可以是包含从由例如银(Ag)、铅(Pb)、铂(Pt)、镍(Ni)和铜(Cu)组成的组中选择的至少一种元素的导电膏。
第一外电极131和第二外电极132可分别电连接到第一内电极121和第二内电极122，以产生电容。第二外电极132可连接到与连接到第一外电极131的电位不同的电位。
包含在第一外电极131和第二外电极132中的导电材料不受特别限制，但是可包括从由镍(Ni)、铜(Cu)及它们的合金组成的组中选择的至少一种元素。
第一外电极131和第二外电极132的厚度可根据其用途等适当地确定，并且不受特别限制，但可例如为10μm至50μm。
根据实施例，形成介电层111的材料不受特别限制，只要可利用其获得足够的电容即可，并且不受特别限制，并且可以是例如钛酸钡(BaTiO3)粉末。
形成介电层111的材料可包括添加到BaTiO3粉末等中的各种添加剂、有机溶剂、增塑剂、粘合剂、分散剂等。
处于烧结状态的介电层111可一体化为单个主体，使得相邻介电层111之间的边界可不容易明显。
第一内电极121和第二内电极122可形成在介电层111上，并且内电极121和122可通过烧结形成在陶瓷主体110的内部，同时在内电极121和122之间具有一个介电层。
介电层111的厚度可根据电容器的容量设计而可选地改变。实施例中的介电层的烧结之后的厚度可以为每层0.4μm或更小。
此外，第一内电极121和第二内电极122的烧结之后的厚度可以为每层0.4μm或更小。
根据实施例，介电层111包括包含介电陶瓷组合物的介电晶粒。介电陶瓷组合物包括BaTiO3基基体材料主成分(基体材料主成分)以及副成分，其中，副成分包括镝(Dy)和铌(Nb)作为第一副成分。基于100mol的基体材料主成分的钛(Ti)，介电陶瓷组合物中的Dy和Nb的总含量可大于0.2mol且小于或等于1.5mol。
相对地，许多稀土元素通常添加到用于介电层111的介电组合物中，以确保多层陶瓷电容器内部的介电可靠性。
当镝(Dy)添加到基体材料主成分的BaTiO3中时，这样的稀土元素中的Dy降低了氧空位浓度，同时取代了钡(Ba)位。因此，已知Dy具有提高可靠性的效果。
另一方面，当离子半径比Dy的离子半径大的稀土元素(例如，镧(La)、钐(Sm)等)添加到介电陶瓷组合物中时，由于可更有效地取代Ba位，因此更有效地降低氧空位浓度。然而，在这种情况下，由于过度的半导体化导致绝缘电阻迅速降低，因此可能无法实际应用稀土元素。
因此，考虑的是，新型元素可添加到介电陶瓷组合物中以确保绝缘电阻，同时使氧空位浓度最小化以提高可靠性。
在实施例中，可通过在介电陶瓷组合物中除Dy之外还包括显示出稳定的介电特性的Nb并确定其最佳含量比，来确保优异的可靠性。
根据实施例，介电陶瓷组合物包括BaTiO3基基体材料主成分(基体材料主成分)以及副成分。副成分包括Dy和Nb作为第一副成分。在这种情况下，基于100mol的基体材料主成分的Ti，Dy和Nb的总含量大于0.2mol且小于或等于1.5mol。
通过基于100mol的基体材料主成分的Ti将介电陶瓷组合物中的Dy和Nb的总含量调整为大于0.2mol且小于或等于1.5mol，可提高诸如绝缘电阻等的可靠性。
当基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Dy和Nb的总含量为0.2mol或更少时，Dy和Nb的总含量太少，因此，可靠性提高效果不显著。
就可靠性改善而言，更有利的是介电陶瓷组合物中的Dy和Nb的总含量增加；然而，一定量或更多的Dy和Nb被半导体化，从而使绝缘体的特性以及烧结性劣化。因此，基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Dy和Nb的总含量可以为1.5mol或更少。
换句话说，当基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Dy和Nb的总含量超过1.5mol时，由于稀土元素的含量过多导致的烧结性不足可能引起容量不足和可靠性劣化的问题。
详细地，根据实施例，基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Nb含量可满足0.05mol≤Nb≤0.20mol。
当基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Nb含量满足0.05mol≤Nb≤0.20mol时，可靠性提高效果(诸如绝缘电阻提高)可以是优异的。
当基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Nb含量小于0.05mol时，Nb含量太少，因此可靠性提高效果可能不显著。
另一方面，当基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Nb含量超过0.20mol时，绝缘电阻可能由于半导体化而降低。
根据实施例，对于包括在陶瓷主体中的介电层中的介电陶瓷组合物，通过包括Dy和Nb作为副成分同时控制它们的含量，可获得高介电特性并且可提高诸如绝缘电阻的可靠性。
根据实施例，Nb可设置在介电晶粒的边界处。
设置在介电晶粒的边界处的Nb可抑制多层陶瓷电容器的绝缘电阻的降低，从而提高可靠性。
根据实施例的多层陶瓷电容器100是具有高容量的小型化产品，并且包括厚度为0.4μm或更小的介电层111以及厚度为0.4μm或更小的第一内电极121和第二内电极122，但是介电层111以及第一内电极121和第二内电极122厚度不具体局限于此。介电层111的厚度大于0.0μm。
另外，多层陶瓷电容器100的尺寸可以是1005(长×宽，1.0mm×0.5mm)或更小。
例如，由于根据实施例的多层陶瓷电容器100是具有高容量的小型化产品，因此介电层111以及第一内电极121和第二内电极122的厚度比现有技术产品的介电层以及第一内电极和第二内电极的厚度薄。对于应用了薄膜介电层和内电极的这种产品，用于提高诸如绝缘电阻的可靠性的研究是非常重要的问题。
详细地，由于与根据实施例的多层陶瓷电容器相比，现有技术的多层陶瓷电容器具有相对较厚的介电层和内电极，因此即使介电陶瓷组合物的成分与现有技术的介电陶瓷组合物的成分相同，可靠性也不是大问题。
然而，对于作为本公开的实施例的应用了薄膜介电层和内电极的多层陶瓷电容器的产品，多层陶瓷电容器的可靠性很重要，并且有必要调整介电陶瓷组合物的成分。
例如，在实施例中，即使当介电层111是厚度为0.4μm或更小的薄膜时，也可通过以下方法来提高诸如绝缘电阻的可靠性：包括Dy和Nb作为第一副成分并且将Dy和Nb的总含量调整为大于0.2mol且小于或等于1.5mol(基于100mol的基体材料主成分的Ti)，更详细地，将Nb含量调整为满足0.05mol≤Nb≤0.20mol(基于100mol的基体材料主成分的Ti)。
然而，在这种情况下，薄膜并不意味着介电层111以及内电极121和122的厚度为0.4μm或更小，并且在某种意义上可被理解为介电层和内电极比现有技术产品的介电层和内电极薄。
在下文中，将更详细地描述根据实施例的介电陶瓷组合物的每种成分。
(a)基体材料主成分
根据本公开的实施例的介电陶瓷组合物可包括由BaTiO3表示的基体材料主成分。
根据实施例，基体材料主成分包括从由BaTiO3、(Ba1-xCax)(Ti1-yCay)O3(其中，0≤x≤0.3、0≤y≤0.1)、(Ba1-xCax)(Ti1-yZry)O3(其中，0≤x≤0.3、0≤y≤0.5)和Ba(Ti1-yZry)O3(其中，0<y≤0.5)组成的组中选择的至少一种化合物，但不必限于此。
根据实施例的介电陶瓷组合物可具有2000或更高的室温介电常数。
基体材料主成分不受特别限制，但是主成分粉末的平均直径可以为大于或等于40nm且小于或等于200nm。
(b)第一副成分
根据本公开的实施例，介电陶瓷组合物包括Dy和Nb作为第一副成分的元素。
在实施例中，第一副成分用于抑制应用了介电陶瓷组合物的多层陶瓷电容器的可靠性劣化。
根据实施例，即使当介电层111的厚度为0.4μm或更小时，也可通过以下方法来提高诸如绝缘电阻的可靠性：包括Dy和Nb作为第一副成分，将介电陶瓷组合物中的Dy和Nb的总含量调整为大于0.2mol且小于或等于1.5mol(基于100mol的基体材料主成分的Ti)，更详细地，将介电陶瓷组合物中的Nb含量调整为满足0.05mol≤Nb≤0.20mol(基于100mol的基体材料主成分的Ti)。本公开的Nb含量可以是介电层111中包括的Nb含量。本公开的Dy和Nb的总含量可以是介电层111中包括的Dy和Nb的总含量。本公开的Nb含量可以是基于100mol％的介电陶瓷组合物中的基体材料主成分的Ti、介电陶瓷组合物中的Nb的原子百分比(at.％)。
(c)第二副成分
根据本公开的实施例，介电陶瓷组合物可包括包含从由锰(Mn)、钒(V)、铬(Cr)、铁(Fe)、镍(Ni)、钴(Co)、铜(Cu)和锌(Zn)组成的组中选择的至少一种元素的一种或更多种氧化物和/或包含从由Mn、V、Cr、Fe、Ni、Co、Cu和Zn组成的组中选择的至少一种元素的一种或更多种碳酸盐作为第二副成分。
基于100mol的基体材料主成分的Ti，可以按0.1mol至2.0mol的量包括包含从由Mn、V、Cr、Fe、Ni、Co、Cu和Zn组成的组中选择的至少一种元素的氧化物和/或包含从由Mn、V、Cr、Fe、Ni、Co、Cu和Zn组成的组中选择的至少一种元素的碳酸盐作为第二副成分。
第二副成分用于降低烧制温度并增强应用了介电陶瓷组合物的多层陶瓷电容器的高温耐受电压特性。
本公开中描述的第二副成分以及第三副成分和第四副成分的含量可以是基于100mol的基体材料主成分的Ti在介电陶瓷组合物中包含的量，并且可定义为被包含在相应的副成分中的金属离子的摩尔数。本公开的第二副成分以及第三副成分和第四副成分的含量可以是介电层111中包括的含量。
当第二副成分的含量小于0.1mol时，烧制温度升高并且高温耐受电压特性稍微降低。
当第二副成分的含量大于2.0mol时，高温耐受电压和室温比电阻可能劣化。
详细地，基于100mol的基体材料主成分，根据实施例的介电陶瓷组合物可包括大于等于0.1mol且小于等于2.0mol的第二副成分。这将使得能够在低温下烧制并提供高温耐受电压特性。
(d)第三副成分
根据本公开的实施例，介电陶瓷组合物可以包括第三副成分，第三副成分是包括固定价受主元素镁(Mg)的氧化物和/或碳酸盐。
基于100mol的基体材料主成分的Ti，可按大于等于0.2mol且小于等于0.7mol的量包括固定价受主元素Mg作为第三副成分。
作为固定价受主元素或包括固定价受主元素的化合物的第三副成分用作降低电子浓度的受主。通过基于100mol的基体材料主成分的Ti添加大于等于0.2mol且小于等于0.7mol的固定价受主元素Mg(第三副成分)，可显著提高由于n型产生的可靠性提高效果。
当基于100mol的基体材料主成分的Ti，第三副成分的含量大于0.7mol时，介电常数可能降低并且介电击穿电压(BDV)可能降低，这可能是有问题的。
(e)第四副成分
根据本公开的实施例，介电陶瓷组合物可包括作为第四副成分的包含硅(Si)和铝(Al)中的至少一种元素的一种或更多种氧化物或者包含Si的玻璃化合物。
基于100mol的基体材料主成分的Ti，介电陶瓷组合物还可包括大于0.0mol且小于或等于0.5mol(例如，大于等于0.001mol且小于等于0.5mol)的第四副成分，第四副成分包括包含Si和Al的至少一种元素的一种或更多种氧化物或包含Si的玻璃化合物。
第四副成分的含量可以是作为第四副成分包含在介电陶瓷组合物中的Si和Al的元素的含量，而与诸如玻璃、氧化物的添加形式无关。
第四副成分用于降低烧制温度并改善应用了介电陶瓷组合物的多层陶瓷电容器的高温耐受电压特性。
当基于100mol的基体材料主成分，第四副成分的含量超过0.5mol时，可能存在诸如烧结性和密度降低、二次相形成等的问题，这可能是有问题的。
详细地，根据实施例，当介电陶瓷组合物包含0.5mol或更少的Al时，Al用作受主并降低电子浓度，从而提高可靠性。
在下文中，将参照本公开的实施例和比较示例更详细地描述本公开。提供这些实施例和比较示例以帮助对本发明的全面理解，并且不应将其解释为限于在此阐述的实施例。
(实施例示例)
通过以下工艺来形成介电层：将添加剂(诸如，Dy、Nb、Al、Mg、Mn等)、粘合剂和有机溶剂(诸如，乙醇)添加到包含BaTiO3作为基体材料主成分的介电粉末颗粒中，并将其湿混以制备介电浆料，然后将介电浆料在载体膜上摊开并干燥以制备陶瓷生片。
将粒径为BaTiO3的40％或更小的所有元素添加剂单分散并添加。
在本公开的实施例示例中，将多层陶瓷电容器制造为使得：基于100mol的基体材料主成分的Ti，介电浆料中的Dy和Nb的总含量大于0.2mol且小于或等于1.5mol；详细地，基于100mol的基体材料主成分的Ti，Nb含量满足0.05mol≤Nb≤0.20mol。
基于100mol的基体材料主成分的Ti，实施例示例1中添加到介电浆料中的Dy和Nb的总含量(即，介电陶瓷组合物中的Dy和Nb的总含量)为1.5mol。
分别基于100mol的基体材料主成分的Ti，在实施例示例2至4中添加到介电浆料中的Nb含量分别为0.05mol、0.1mol和0.20mol同时其中Dy含量为1.3mol。
通过使用刮刀法将介电浆料制造为具有几微米厚度的陶瓷生片。
然后，制备包括40重量份至50重量份(相对于100重量份的导电膏)的平均粒径为0.1μm至0.2μm的镍粉末的用于内电极的导电膏。
将用于内电极的导电膏丝网印刷在陶瓷生片上以形成内电极图案。然后将其上形成有内电极图案的生片层压以形成层压体，然后压制和切割层压体。
然后，对切割的层压体进行加热以去除粘合剂，并在高温还原气氛中烧制以形成陶瓷主体。
在烧制工艺期间，通过以下方式执行热处理：在1100℃至1200℃下在还原气氛(0.1％ H2/99.9％ N2，H2O/H2/N2)中烧制2小时，然后在1000℃下在氮气(N2)气氛中再氧化3小时。
使用铜(Cu)膏来对烧制的陶瓷主体执行封端工艺和电极烧制，并形成外电极。
另外，将陶瓷主体110内部的介电层111以及第一内电极121和第二内电极122制造为在烧制之后具有0.4μm或更小的厚度。
(比较示例1)
在比较示例1中，基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Dy和Nb的总含量为1.8mol(超过1.5mol)。其余的制造工艺与先前描述的制造工艺相同。
(比较示例2)
在比较示例2中，基于100mol的基体材料主成分的Ti，介电陶瓷组合物中的Dy和Nb的总含量为2.1mol(超过1.5mol)。其余的制造工艺与先前描述的制造工艺相同。
(比较示例3)
在比较示例3中，未向介电层中添加Nb而作为现有技术的多层陶瓷电容器。其余的制造工艺与先前描述的制造工艺相同。
(比较示例4)
在比较示例4中，基于100mol的基体材料主成分的Ti，将0.25mol的Nb添加到介电浆料中(即，介电陶瓷组合物中的Dy和Nb的总含量)。其余的制造工艺与先前描述的制造工艺相同。
对如上所述在实施例示例1至实施例示例4和比较示例1至比较示例4中制造的原型多层陶瓷电容器(原型MLCC)的样品进行了HALT测试。
图3A至图3C是根据本公开的实施例示例和比较示例的HALT测试结果的曲线图。
图3A表示多层陶瓷电容器样品的实施例示例1，其中，基于100mol的基体材料主成分的Ti，Dy和Nb的总含量为1.5mol。HALT测试显示出优异的可靠性，没有缺陷。
在实施例示例1的情况下，公称容量为101％，BDV为63V，表明在容量和BDV方面具有优异的可靠性。
图3B表示比较示例1，其中，基于100mol的基体材料主成分的Ti，Dy和Nb的总含量为1.8mol(超过1.5mol)，并且图3C表示比较示例2，其中，基于100mol的基体材料主成分的Ti，Dy和Nb的总含量为2.1mol(超过1.5mol)。
在比较示例1和2的两种情况下，在HALT测试中观察到一些缺陷，表明可靠性降低。
此外，在比较示例1中，容量为公称容量的90％，BDV为58V，在比较示例2中，容量为公称容量的82％，BDV为47V，表明可靠性低于标准。
图4A至图4E是根据本公开的实施例示例和比较示例的HALT测试结果的曲线图。
图4A表示比较示例3，其中，如现有技术那样未添加Nb。在HALT测试中检测到一些缺陷，表明可靠性降低。
图4B至图4D表示实施例示例2至实施例示例4，其中，基于100mol的基体材料主成分的Ti，分别添加0.05mol、0.1mol和0.20mol的Nb。HALT测试显示无缺陷或缺陷数量最少，表明具有优异的可靠性。
图4E表示比较示例4，其中，基于100mol的基体材料主成分的Ti，Nb含量为0.25mol。在HALT测试中检测到一些缺陷，表明可靠性降低。
根据实施例，通过包括Nb作为副成分同时控制其含量，包括在陶瓷主体中的介电层中的介电陶瓷组合物可具有改善的可靠性(诸如，改善的绝缘电阻)。
尽管上面已经示出和描述了示例实施例，但是对于本领域技术人员将显而易见的是，在不脱离由所附权利要求限定的本公开的范围的情况下，可以进行修改和改变。

Claims (8)

1.一种多层陶瓷电容器，包括：
陶瓷主体，包括介电层以及被设置为彼此面对且相应介电层介于它们之间的第一内电极和第二内电极；以及
第一外电极和第二外电极，设置在所述陶瓷主体的外表面上，所述第一外电极电连接到所述第一内电极，并且所述第二外电极电连接到所述第二内电极，
其中，所述介电层包括包含介电陶瓷组合物的介电晶粒，
所述介电陶瓷组合物包括钛酸钡基体材料主成分以及副成分，
所述副成分包括Dy和Nb作为第一副成分，
其中，基于100mol的所述钛酸钡基体材料主成分的Ti，Dy和Nb的总含量为大于0.2mol且小于或等于1.5mol，并且
其中，所述介电层的厚度为0.4μm或更小。
2.根据权利要求1所述的多层陶瓷电容器，其中，基于100mol的所述钛酸钡基体材料主成分的Ti，Nb的含量满足0.05mol≤Nb≤0.20mol。
3.根据权利要求1所述的多层陶瓷电容器，其中，基于100mol的所述钛酸钡基体材料主成分的Ti，所述介电陶瓷组合物包括大于等于0.1mol且小于等于2.0mol的第二副成分，
其中，所述第二副成分包括包含从由Mn、V、Cr、Fe、Ni、Co、Cu和Zn组成的组中选择的至少一种元素的一种或更多种氧化物和/或包含从由Mn、V、Cr、Fe、Ni、Co、Cu和Zn组成的组中选择的至少一种元素的一种或更多种碳酸盐。
4.根据权利要求1所述的多层陶瓷电容器，其中，基于100mol的所述钛酸钡基体材料主成分的Ti，所述介电陶瓷组合物包括大于等于0.2mol且小于等于0.7mol的第三副成分，
其中，所述第三副成分是包括固定价受主元素Mg的氧化物或碳酸盐。
5.根据权利要求1所述的多层陶瓷电容器，其中，基于100mol的所述钛酸钡基体材料主成分的Ti，所述介电陶瓷组合物包括0.001mol至0.5mol的第四副成分，
其中，所述第四副成分包括包含Si和Al中的至少一种元素的一种或更多种氧化物或者包含Si的玻璃化合物。
6.根据权利要求1所述的多层陶瓷电容器，其中，所述第一内电极和所述第二内电极的厚度为0.4μm或更小。
7.根据权利要求1所述的多层陶瓷电容器，其中，所述多层陶瓷电容器的尺寸为1005或更小，1005尺寸的所述多层陶瓷电容器的长×宽为1.0mm×0.5mm。
8.根据权利要求1所述的多层陶瓷电容器，其中，Nb设置在所述介电晶粒的边界处。
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US20220093335A1 (en) 2022-03-24
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US20230411075A1 (en) 2023-12-21
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