JPH10505911A - ガス検知の方法および装置 - Google Patents
ガス検知の方法および装置Info
- Publication number
- JPH10505911A JPH10505911A JP8510823A JP51082396A JPH10505911A JP H10505911 A JPH10505911 A JP H10505911A JP 8510823 A JP8510823 A JP 8510823A JP 51082396 A JP51082396 A JP 51082396A JP H10505911 A JPH10505911 A JP H10505911A
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- semiconductor
- gas
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- gas detection
- Prior art date
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- Granted
Links
- 238000001514 detection method Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 230000003197 catalytic effect Effects 0.000 claims abstract description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000008859 change Effects 0.000 claims abstract description 14
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 9
- 239000010432 diamond Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 141
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 27
- 239000003054 catalyst Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 18
- 230000005669 field effect Effects 0.000 claims description 17
- 239000012212 insulator Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 239000002356 single layer Substances 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- -1 oxide Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000011149 active material Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 238000002309 gasification Methods 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 19
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000007774 longterm Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 48
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000000523 sample Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 239000012429 reaction media Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241000857945 Anita Species 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241000283080 Proboscidea <mammal> Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GYCPIXXIUVTKTF-UHFFFAOYSA-N [C].[H][H] Chemical compound [C].[H][H] GYCPIXXIUVTKTF-UHFFFAOYSA-N 0.000 description 1
- VKDJQARGLAEPRE-UHFFFAOYSA-N [Si].[Pt]=O Chemical compound [Si].[Pt]=O VKDJQARGLAEPRE-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/005—H2
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.半導体基板(1)上の少なくとも1つの検知デバイスを含むガス検知アレ イであって、 測定されるべきガスに接触する触媒層(5)と、該触媒層(5)と前記半導体 基板(1)との間の単一または多重層と、により前記半導体の外部の電界に変化 が起こり、それによって前記単一または多重層がガスの検出プロセスにおける中 間層(4)を構成し、 該中間層(4)が前記触媒層(5)と異なること、 を特徴とする、前記ガス検知アレイ。 2.半導体基板(1)上の少なくとも1つのセンサデバイスを含むガス検知ア レイであって、 前記基板が触媒金属の層(3)を備えていることと、 測定されるべきガスに接触する第2触媒層(5)と、該触媒層(5)と前記触 媒金属(3)との間の単一または多重層と、により前記半導体の外部の電界に変 化が起こり、それによって前記単一または多重層がガスの検出プロセスにおける 中間層(4)を構成し、 該中間層(4)が前記触媒金属層(3)および前記触媒層(5)と異なること と、 を特徴とする、前記ガス検知アレイ。 3.前記触媒層(5)および前記中間層(4)が、本来前記半導体基板上に堆 積された好ましくは酸化物である第1絶縁体層上に配置され、電界効果トランジ スタ、金属−絶縁体−半導体キャパシタ、(金属薄形絶縁体半導体ダイオード) 、ショットキーバリヤデバイス、またはトンネルデバイスのような電界効果構造 を形成すること、 を特徴とする、請求項第1項または第2項記載のガス検知アレイ。 4.前記触媒活性材料(5)が、触媒金属、合金または化合物、酸化物、セラ ミックスまたはポリマー、から成ること、 を特徴とする、請求項第1項、第2項、または第3項記載のガス検知アレイ。 5.前記半導体デバイスが広い禁制帯幅の半導体材料を用いて製造され、該禁 制帯幅が少なくとも1.5eVであること、 を特徴とする、請求項第4項記載のガス検知アレイ。 6.前記半導体材料が炭化ケイ素またはダイヤモンドであること、 を特徴とする、請求項第5項記載のガス検知アレイ。 7.前記中間層が、好ましくは前記デバイスを少なくとも500℃まで加熱す るアニールステップを受けること、 を特徴とする、請求項第1項、第2項、または第3項記載のガス検知アレイ。 8.前記中間層(4)がケイ化物であること、 を特徴とする、請求項第4項記載のガス検知アレイ。 9.前記中間層(4)がケイ化タンタルであること、 を特徴とする、請求項第4項記載のガス検知アレイ。 10.適切にドープされた半導体基板(1)を含む少なくとも1つのガス検知 半導体デバイスを有するガスセンサアレイの製造方法において、 前記基板上へ第1単一または多重層(4)を、マスクを通しての、例えば蒸着 またはスパッタリングにより、好ましくはDCマグネトロンスパッタリングによ り、付着させるステップであって、前記第1単一または多重層が、中間層を形成 し且つ触媒層と共に前記半導体の外部の電界の変化を発生させる、前記付着ステ ップと、 前記第1層または諸層の頂部上への、触媒活性を有する第2層(5)の同様に しての付着ステップと、 を含む、前記方法。 11.触媒金属層(3)を備えた適切にドープされた半導体基板(1)を含む 少なくとも1つのガス検知半導体デバイスを有するガスセンサアレイの製造方法 において、 前記触媒金属層上へ第1単一または多重層(4)を、マスクを通しての、蒸着 またはスパッタリングにより、好ましくはDCマグネトロンスパッタリングによ り、付着させるステップであって、前記第1単一または多重層の少なくとも1つ が触媒層と共に前記半導体の外部の電界の変化を発生させうる、前記付着ステッ プと、 前記第1層の頂部上への、触媒活性を有する第2層(5)の同様にしての付着 ステップと、 を含む、前記方法。 12.前記半導体基板上へ、それ以上の層の付着の前に第3層を付着するステ ップであって、該第3層が好ましくは酸化物層である絶縁体であり、それにより 電界効果トランジスタ、金属−絶縁体−半導体キャパシタ、金属薄形絶縁体半導 体ダイオード、ショットキーバリヤデバイス、またはトンネルデバイスのような 電界効果デバイスを形成する、前記付着ステップ、 を特徴とする、請求項第10項または第11項記載の方法。 13.前記第2層(5)が、触媒金属、合金または化合物、酸化物、セラミッ クスまたはポリマー、から成ること、 を特徴とする、請求項第10項、第11項、または第12項記載の方法。 14.前記基板(1)が広い禁制帯幅の半導体材料であり、該禁制帯幅が少な くとも1.5eVであること、 を特徴とする、請求項第10項から第13項までのいずれかに記載の方法。 15.前記広い禁制帯幅の半導体材料が炭化ケイ素またはダイヤモンドである こと、 を特徴とする、請求項第14項記載の方法。 16.前記中間層(4)が、好ましくは前記デバイスを少なくとも500℃ま で加熱するアニールステップを受けること、 を特徴とする、請求項第10項、第11項、または第12項記載の方法。 17.前記第1層(4)が少なくともケイ化物の中間層を形成すること、 を特徴とする、請求項第13項記載の方法。 18.前記中間層がケイ化タンタルであること、 を特徴とする、請求項第13項記載の方法。 19.前記中間層が導電性のもので、該中間層が前記半導体デバイスに対する 電気接点として役立ちうること、 を特徴とする、請求項第10項から第16項までのいずれかに記載のガス検知ア レイ。 20.前記中間層が触媒金属でないことを特徴とする、請求項第1項から第9 項までのいずれかに記載のガス検知アレイ。 21.前記中間層が、該中間層を前記半導体デバイスの部品として適せしめる 電気的性質を有することを特徴とする、請求項第1項から第9項までのいずれか に記載のガス検知アレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9403218A SE503265C2 (sv) | 1994-09-23 | 1994-09-23 | Förfarande och anordning för gasdetektion |
SE9403218-2 | 1994-09-23 | ||
PCT/SE1995/001084 WO1996009534A1 (en) | 1994-09-23 | 1995-09-22 | Method and device for gas sensing |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10505911A true JPH10505911A (ja) | 1998-06-09 |
JP3744539B2 JP3744539B2 (ja) | 2006-02-15 |
Family
ID=20395360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51082396A Expired - Fee Related JP3744539B2 (ja) | 1994-09-23 | 1995-09-22 | ガス検知の方法および装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6109094A (ja) |
EP (1) | EP0783686A1 (ja) |
JP (1) | JP3744539B2 (ja) |
AU (1) | AU3623595A (ja) |
SE (1) | SE503265C2 (ja) |
WO (1) | WO1996009534A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002543593A (ja) * | 1999-04-22 | 2002-12-17 | アクレオ アーベー | 高温利用可能なSiC電界効果トランジスタ、前記トランジスタの使用およびその製造方法 |
US6627964B2 (en) | 2000-08-10 | 2003-09-30 | Ngk Spark Plug Co., Ltd. | Gas sensor |
WO2014133295A1 (ko) * | 2013-02-26 | 2014-09-04 | 서울대학교산학협력단 | 수평형 플로팅 게이트를 갖는 3차원 핀펫형 가스 감지소자 |
WO2019150631A1 (ja) * | 2018-01-31 | 2019-08-08 | 日立金属株式会社 | ガスセンサ |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL119514A0 (en) | 1996-10-29 | 1997-01-10 | Yeda Res & Dev | Molecular controlled semiconductor resistor (MOCSER) as a light and chemical sensor |
DE19708166C2 (de) * | 1997-02-28 | 1999-08-12 | Forschungszentrum Juelich Gmbh | Sensoranordnung zum Nachweis von Substanzen in einem Probenanalyten |
SE508169C2 (sv) * | 1997-10-12 | 1998-09-07 | Mecel Ab | Sensor och förfarande för reglering av bränsle-luft blandning till en flercylindrig förbränningsmotor |
US6298710B1 (en) | 1998-02-20 | 2001-10-09 | Ford Global Technologies, Inc. | Combustible gas diode sensor |
SE514042C2 (sv) | 1998-05-08 | 2000-12-18 | Nordic Sensor Technologies Ab | Sensoranordning |
US6027954A (en) * | 1998-05-29 | 2000-02-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Gas sensing diode and method of manufacturing |
US6596236B2 (en) | 1999-01-15 | 2003-07-22 | Advanced Technology Materials, Inc. | Micro-machined thin film sensor arrays for the detection of H2 containing gases, and method of making and using the same |
SE523918C2 (sv) | 1999-01-25 | 2004-06-01 | Appliedsensor Sweden Ab | Förfarande för framställning av integrerade sensorgrupper på ett gemensamt substrat samt en mask för användning vid förfarandet |
EP1052501A1 (en) * | 1999-05-11 | 2000-11-15 | Ford Global Technologies, Inc. | A combustible gas diode sensor |
EP1269177A2 (en) * | 2000-03-17 | 2003-01-02 | Wayne State University | Mis hydrogen sensors |
US6330516B1 (en) * | 2000-03-27 | 2001-12-11 | Power Distribution, Inc. | Branch circuit monitor |
US7254986B2 (en) * | 2002-12-13 | 2007-08-14 | General Electric Company | Sensor device for detection of dissolved hydrocarbon gases in oil filled high-voltage electrical equipment |
US6763699B1 (en) | 2003-02-06 | 2004-07-20 | The United States Of America As Represented By The Administrator Of Natural Aeronautics And Space Administration | Gas sensors using SiC semiconductors and method of fabrication thereof |
DE10346071A1 (de) * | 2003-10-04 | 2005-04-28 | Daimler Chrysler Ag | Abgassensor und sensorbasiertes Abgasreinigungsverfahren |
GB0323802D0 (en) * | 2003-10-10 | 2003-11-12 | Univ Cambridge Tech | Detection of molecular interactions using a metal-insulator-semiconductor diode structure |
US7053425B2 (en) * | 2003-11-12 | 2006-05-30 | General Electric Company | Gas sensor device |
DE102004034192A1 (de) * | 2004-07-14 | 2006-02-09 | Heraeus Sensor Technology Gmbh | Hochtemperaturstabiler Sensor |
US7453267B2 (en) * | 2005-01-14 | 2008-11-18 | Power Measurement Ltd. | Branch circuit monitor system |
US20090163384A1 (en) | 2007-12-22 | 2009-06-25 | Lucent Technologies, Inc. | Detection apparatus for biological materials and methods of making and using the same |
US20060270053A1 (en) * | 2005-05-26 | 2006-11-30 | General Electric Company | Apparatus, methods, and systems having gas sensor with catalytic gate and variable bias |
EP1767934B1 (en) * | 2005-09-21 | 2007-12-05 | Adixen Sensistor AB | Hydrogen gas sensitive semiconductor sensor |
US7389675B1 (en) * | 2006-05-12 | 2008-06-24 | The United States Of America As Represented By The National Aeronautics And Space Administration | Miniaturized metal (metal alloy)/ PdOx/SiC hydrogen and hydrocarbon gas sensors |
US20080302672A1 (en) * | 2007-06-05 | 2008-12-11 | General Electric Company | Systems and methods for sensing |
DE102009029621A1 (de) * | 2009-09-21 | 2011-03-24 | Robert Bosch Gmbh | Detektionsvorrichtung und Verfahren zur Detektion eines Gases |
JP7290243B2 (ja) | 2019-03-29 | 2023-06-13 | Tianma Japan株式会社 | ガス検知装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5010678B1 (ja) * | 1970-07-21 | 1975-04-23 | ||
US4244918A (en) * | 1975-12-23 | 1981-01-13 | Nippon Soken, Inc. | Gas component detection apparatus |
US4337476A (en) * | 1980-08-18 | 1982-06-29 | Bell Telephone Laboratories, Incorporated | Silicon rich refractory silicides as gate metal |
CH665908A5 (de) * | 1983-08-30 | 1988-06-15 | Cerberus Ag | Vorrichtung zum selektiven detektieren der gasfoermigen bestandteile von gasgemischen in luft mittels eines gassensors. |
JPS60253958A (ja) * | 1984-05-31 | 1985-12-14 | Sharp Corp | センサ |
GB8606045D0 (en) * | 1986-03-12 | 1986-04-16 | Emi Plc Thorn | Gas sensitive device |
KR960016712B1 (ko) * | 1986-11-05 | 1996-12-20 | 오오니시 마사후미 | 가스센서 및 그의 제조방법 |
US4911892A (en) * | 1987-02-24 | 1990-03-27 | American Intell-Sensors Corporation | Apparatus for simultaneous detection of target gases |
JPH0695082B2 (ja) * | 1987-10-08 | 1994-11-24 | 新コスモス電機株式会社 | 吸引式オゾンガス検知器 |
US4875083A (en) * | 1987-10-26 | 1989-10-17 | North Carolina State University | Metal-insulator-semiconductor capacitor formed on silicon carbide |
US5250170A (en) * | 1990-03-15 | 1993-10-05 | Ricoh Company, Ltd. | Gas sensor having metal-oxide semiconductor layer |
JPH04212048A (ja) * | 1990-06-11 | 1992-08-03 | Ricoh Co Ltd | ガスセンサ |
JPH0572163A (ja) * | 1990-11-30 | 1993-03-23 | Mitsui Mining Co Ltd | 半導体式ガスセンサー |
US5251470A (en) * | 1991-03-12 | 1993-10-12 | Siemens Aktiengesellschaft | Housing for fast exhaust gas sensors for a cylinder-selective lambda measurement in an internal combustion engine |
DE4223432C2 (de) * | 1991-08-14 | 1995-07-20 | Siemens Ag | Gassensor mit einem Temperaturfühler |
US5154514A (en) * | 1991-08-29 | 1992-10-13 | International Business Machines Corporation | On-chip temperature sensor utilizing a Schottky barrier diode structure |
US5273779A (en) * | 1991-12-09 | 1993-12-28 | Industrial Technology Research Institute | Method of fabricating a gas sensor and the product fabricated thereby |
US5401470A (en) * | 1992-04-24 | 1995-03-28 | Mine Safety Appliances Company | Combustible gas sensor |
US5285084A (en) * | 1992-09-02 | 1994-02-08 | Kobe Steel Usa | Diamond schottky diodes and gas sensors fabricated therefrom |
US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
US5384470A (en) * | 1992-11-02 | 1995-01-24 | Kobe Steel, Usa, Inc. | High temperature rectifying contact including polycrystalline diamond and method for making same |
SE510091C2 (sv) * | 1993-05-19 | 1999-04-19 | Volvo Ab | Förfarande och anordning för detektering av oxiderbara ämnen i ett avgasutlopp |
DE4324659C1 (de) * | 1993-07-22 | 1995-04-06 | Siemens Ag | Sensor mit einem in einem Gehäuse angeordneten Sensorelement |
-
1994
- 1994-09-23 SE SE9403218A patent/SE503265C2/sv not_active IP Right Cessation
-
1995
- 1995-09-22 AU AU36235/95A patent/AU3623595A/en not_active Abandoned
- 1995-09-22 WO PCT/SE1995/001084 patent/WO1996009534A1/en active Application Filing
- 1995-09-22 US US08/809,905 patent/US6109094A/en not_active Expired - Lifetime
- 1995-09-22 JP JP51082396A patent/JP3744539B2/ja not_active Expired - Fee Related
- 1995-09-22 EP EP95933689A patent/EP0783686A1/en not_active Withdrawn
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002543593A (ja) * | 1999-04-22 | 2002-12-17 | アクレオ アーベー | 高温利用可能なSiC電界効果トランジスタ、前記トランジスタの使用およびその製造方法 |
US6627964B2 (en) | 2000-08-10 | 2003-09-30 | Ngk Spark Plug Co., Ltd. | Gas sensor |
WO2014133295A1 (ko) * | 2013-02-26 | 2014-09-04 | 서울대학교산학협력단 | 수평형 플로팅 게이트를 갖는 3차원 핀펫형 가스 감지소자 |
KR101495627B1 (ko) * | 2013-02-26 | 2015-02-25 | 서울대학교산학협력단 | 수평형 플로팅 게이트를 갖는 3차원 핀펫형 가스 감지소자 |
WO2019150631A1 (ja) * | 2018-01-31 | 2019-08-08 | 日立金属株式会社 | ガスセンサ |
JP2019132676A (ja) * | 2018-01-31 | 2019-08-08 | 日立金属株式会社 | ガスセンサ |
Also Published As
Publication number | Publication date |
---|---|
US6109094A (en) | 2000-08-29 |
SE9403218D0 (sv) | 1994-09-23 |
EP0783686A1 (en) | 1997-07-16 |
SE503265C2 (sv) | 1996-04-29 |
AU3623595A (en) | 1996-04-09 |
JP3744539B2 (ja) | 2006-02-15 |
SE9403218L (sv) | 1996-03-24 |
WO1996009534A1 (en) | 1996-03-28 |
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