JPH10320983A5 - - Google Patents

Info

Publication number
JPH10320983A5
JPH10320983A5 JP1997125828A JP12582897A JPH10320983A5 JP H10320983 A5 JPH10320983 A5 JP H10320983A5 JP 1997125828 A JP1997125828 A JP 1997125828A JP 12582897 A JP12582897 A JP 12582897A JP H10320983 A5 JPH10320983 A5 JP H10320983A5
Authority
JP
Japan
Prior art keywords
voltage
mos transistor
memory cell
generating
nonvolatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997125828A
Other languages
English (en)
Japanese (ja)
Other versions
JP3887064B2 (ja
JPH10320983A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP12582897A priority Critical patent/JP3887064B2/ja
Priority claimed from JP12582897A external-priority patent/JP3887064B2/ja
Publication of JPH10320983A publication Critical patent/JPH10320983A/ja
Publication of JPH10320983A5 publication Critical patent/JPH10320983A5/ja
Application granted granted Critical
Publication of JP3887064B2 publication Critical patent/JP3887064B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP12582897A 1997-05-15 1997-05-15 不揮発性半導体記憶装置 Expired - Fee Related JP3887064B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12582897A JP3887064B2 (ja) 1997-05-15 1997-05-15 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12582897A JP3887064B2 (ja) 1997-05-15 1997-05-15 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH10320983A JPH10320983A (ja) 1998-12-04
JPH10320983A5 true JPH10320983A5 (https=) 2005-04-07
JP3887064B2 JP3887064B2 (ja) 2007-02-28

Family

ID=14919956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12582897A Expired - Fee Related JP3887064B2 (ja) 1997-05-15 1997-05-15 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JP3887064B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6400638B1 (en) * 2000-02-25 2002-06-04 Advanced Micro Devices, Inc. Wordline driver for flash memory read mode
JP2006024598A (ja) * 2004-07-06 2006-01-26 Fujitsu Ltd 半導体装置の製造方法
JP2007059024A (ja) 2005-08-26 2007-03-08 Micron Technol Inc 温度補償された読み出し・検証動作をフラッシュ・メモリにおいて生成するための方法及び装置
JP2007299489A (ja) * 2006-05-02 2007-11-15 Micron Technology Inc 不揮発性メモリにおける読み取り・検証動作を生成する方法及び装置
JP2009123292A (ja) 2007-11-15 2009-06-04 Toshiba Corp 半導体記憶装置

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