JP3887064B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP3887064B2
JP3887064B2 JP12582897A JP12582897A JP3887064B2 JP 3887064 B2 JP3887064 B2 JP 3887064B2 JP 12582897 A JP12582897 A JP 12582897A JP 12582897 A JP12582897 A JP 12582897A JP 3887064 B2 JP3887064 B2 JP 3887064B2
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Japan
Prior art keywords
voltage
mos transistor
memory cell
temperature
memory device
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Expired - Fee Related
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JP12582897A
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Japanese (ja)
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JPH10320983A5 (https=
JPH10320983A (ja
Inventor
徹 丹沢
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Toshiba Corp
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Toshiba Corp
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Priority to JP12582897A priority Critical patent/JP3887064B2/ja
Publication of JPH10320983A publication Critical patent/JPH10320983A/ja
Publication of JPH10320983A5 publication Critical patent/JPH10320983A5/ja
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JP12582897A 1997-05-15 1997-05-15 不揮発性半導体記憶装置 Expired - Fee Related JP3887064B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12582897A JP3887064B2 (ja) 1997-05-15 1997-05-15 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12582897A JP3887064B2 (ja) 1997-05-15 1997-05-15 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH10320983A JPH10320983A (ja) 1998-12-04
JPH10320983A5 JPH10320983A5 (https=) 2005-04-07
JP3887064B2 true JP3887064B2 (ja) 2007-02-28

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JP12582897A Expired - Fee Related JP3887064B2 (ja) 1997-05-15 1997-05-15 不揮発性半導体記憶装置

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6400638B1 (en) * 2000-02-25 2002-06-04 Advanced Micro Devices, Inc. Wordline driver for flash memory read mode
JP2006024598A (ja) * 2004-07-06 2006-01-26 Fujitsu Ltd 半導体装置の製造方法
JP2007059024A (ja) 2005-08-26 2007-03-08 Micron Technol Inc 温度補償された読み出し・検証動作をフラッシュ・メモリにおいて生成するための方法及び装置
JP2007299489A (ja) * 2006-05-02 2007-11-15 Micron Technology Inc 不揮発性メモリにおける読み取り・検証動作を生成する方法及び装置
JP2009123292A (ja) 2007-11-15 2009-06-04 Toshiba Corp 半導体記憶装置

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Publication number Publication date
JPH10320983A (ja) 1998-12-04

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