JPH10274787A5 - - Google Patents

Info

Publication number
JPH10274787A5
JPH10274787A5 JP1997081476A JP8147697A JPH10274787A5 JP H10274787 A5 JPH10274787 A5 JP H10274787A5 JP 1997081476 A JP1997081476 A JP 1997081476A JP 8147697 A JP8147697 A JP 8147697A JP H10274787 A5 JPH10274787 A5 JP H10274787A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
insulating
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997081476A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10274787A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP8147697A priority Critical patent/JPH10274787A/ja
Priority claimed from JP8147697A external-priority patent/JPH10274787A/ja
Priority to US09/049,313 priority patent/US6010923A/en
Publication of JPH10274787A publication Critical patent/JPH10274787A/ja
Priority to US09/428,819 priority patent/US6097038A/en
Publication of JPH10274787A5 publication Critical patent/JPH10274787A5/ja
Pending legal-status Critical Current

Links

JP8147697A 1997-03-31 1997-03-31 半導体装置の製造方法 Pending JPH10274787A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8147697A JPH10274787A (ja) 1997-03-31 1997-03-31 半導体装置の製造方法
US09/049,313 US6010923A (en) 1997-03-31 1998-03-27 Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region
US09/428,819 US6097038A (en) 1997-03-31 1999-10-28 Semiconductor device utilizing annealed semiconductor layer as channel region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8147697A JPH10274787A (ja) 1997-03-31 1997-03-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH10274787A JPH10274787A (ja) 1998-10-13
JPH10274787A5 true JPH10274787A5 (enExample) 2005-03-03

Family

ID=13747468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8147697A Pending JPH10274787A (ja) 1997-03-31 1997-03-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH10274787A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4870403B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP4870404B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP2011040593A (ja) * 2009-08-12 2011-02-24 Seiko Epson Corp 半導体装置ならびに半導体装置の製造方法

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