JPH10274788A5 - - Google Patents
Info
- Publication number
- JPH10274788A5 JPH10274788A5 JP1997081477A JP8147797A JPH10274788A5 JP H10274788 A5 JPH10274788 A5 JP H10274788A5 JP 1997081477 A JP1997081477 A JP 1997081477A JP 8147797 A JP8147797 A JP 8147797A JP H10274788 A5 JPH10274788 A5 JP H10274788A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating
- film
- semiconductor layer
- layer
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8147797A JP3827180B2 (ja) | 1997-03-31 | 1997-03-31 | 半導体装置の製造方法 |
| US09/049,313 US6010923A (en) | 1997-03-31 | 1998-03-27 | Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region |
| US09/428,819 US6097038A (en) | 1997-03-31 | 1999-10-28 | Semiconductor device utilizing annealed semiconductor layer as channel region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8147797A JP3827180B2 (ja) | 1997-03-31 | 1997-03-31 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10274788A JPH10274788A (ja) | 1998-10-13 |
| JPH10274788A5 true JPH10274788A5 (enExample) | 2005-03-03 |
| JP3827180B2 JP3827180B2 (ja) | 2006-09-27 |
Family
ID=13747499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8147797A Expired - Fee Related JP3827180B2 (ja) | 1997-03-31 | 1997-03-31 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3827180B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116314475B (zh) * | 2023-03-22 | 2024-10-01 | 天合光能股份有限公司 | 非晶硅薄膜退火方法和装置 |
-
1997
- 1997-03-31 JP JP8147797A patent/JP3827180B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5401666A (en) | Method for selective annealing of a semiconductor device | |
| US5004701A (en) | Method of forming isolation region in integrated circuit semiconductor device | |
| JPH11514152A (ja) | 薄膜トランジスタを具える電子デバイスの製造方法 | |
| US4637128A (en) | Method of producing semiconductor device | |
| US5409857A (en) | Process for production of an integrated circuit | |
| JP2001077215A5 (enExample) | ||
| KR100505676B1 (ko) | Ldd 구조를 가지는 반도체 소자 제조 방법 | |
| JPS5972759A (ja) | 半導体装置の製造方法 | |
| EP0804805B1 (en) | Method of forming transistors in a peripheral circuit | |
| JPH10274787A5 (enExample) | ||
| EP0287031B1 (en) | High breakdown voltage insulating film provided between polysilicon layers | |
| JPH10274788A5 (enExample) | ||
| KR100188090B1 (ko) | 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법 | |
| JP2914655B2 (ja) | 非揮発性メモリ素子の製造方法 | |
| JP3289363B2 (ja) | 不揮発性半導体メモリ装置の製造方法 | |
| JPH07221316A (ja) | 薄膜トランジスタの製造方法 | |
| TW591696B (en) | Method to improve the sub-threshold voltage of the chip at wafer edge | |
| JP2870131B2 (ja) | 半導体装置の製造方法 | |
| JPH02863B2 (enExample) | ||
| KR0138315B1 (ko) | 불휘발성 메모리소자 및 그 제조방법 | |
| KR100236073B1 (ko) | 반도체 소자의 제조방법 | |
| KR0147667B1 (ko) | 상이한 스페이서 길이를 이용한 반도체 소자의 제조 방법 | |
| JPH07193245A (ja) | 薄膜トランジスタの製造方法 | |
| JP2621686B2 (ja) | 半導体装置の製造方法 | |
| JPH11265947A5 (enExample) |