JP3827180B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP3827180B2 JP3827180B2 JP8147797A JP8147797A JP3827180B2 JP 3827180 B2 JP3827180 B2 JP 3827180B2 JP 8147797 A JP8147797 A JP 8147797A JP 8147797 A JP8147797 A JP 8147797A JP 3827180 B2 JP3827180 B2 JP 3827180B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating
- protective film
- semiconductor layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000010408 film Substances 0.000 claims description 179
- 239000010410 layer Substances 0.000 claims description 108
- 230000001681 protective effect Effects 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 238000005224 laser annealing Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 description 22
- 229910052681 coesite Inorganic materials 0.000 description 16
- 229910052906 cristobalite Inorganic materials 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 16
- 229910052682 stishovite Inorganic materials 0.000 description 16
- 229910052905 tridymite Inorganic materials 0.000 description 16
- 229910004205 SiNX Inorganic materials 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- -1 that is Inorganic materials 0.000 description 2
- 229910007258 Si2H4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8147797A JP3827180B2 (ja) | 1997-03-31 | 1997-03-31 | 半導体装置の製造方法 |
| US09/049,313 US6010923A (en) | 1997-03-31 | 1998-03-27 | Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region |
| US09/428,819 US6097038A (en) | 1997-03-31 | 1999-10-28 | Semiconductor device utilizing annealed semiconductor layer as channel region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8147797A JP3827180B2 (ja) | 1997-03-31 | 1997-03-31 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10274788A JPH10274788A (ja) | 1998-10-13 |
| JPH10274788A5 JPH10274788A5 (enExample) | 2005-03-03 |
| JP3827180B2 true JP3827180B2 (ja) | 2006-09-27 |
Family
ID=13747499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8147797A Expired - Fee Related JP3827180B2 (ja) | 1997-03-31 | 1997-03-31 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3827180B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116314475B (zh) * | 2023-03-22 | 2024-10-01 | 天合光能股份有限公司 | 非晶硅薄膜退火方法和装置 |
-
1997
- 1997-03-31 JP JP8147797A patent/JP3827180B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10274788A (ja) | 1998-10-13 |
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