JPH10242422A5 - - Google Patents

Info

Publication number
JPH10242422A5
JPH10242422A5 JP1997046810A JP4681097A JPH10242422A5 JP H10242422 A5 JPH10242422 A5 JP H10242422A5 JP 1997046810 A JP1997046810 A JP 1997046810A JP 4681097 A JP4681097 A JP 4681097A JP H10242422 A5 JPH10242422 A5 JP H10242422A5
Authority
JP
Japan
Prior art keywords
insulating film
interlayer insulating
memory cell
region
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997046810A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242422A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9046810A priority Critical patent/JPH10242422A/ja
Priority claimed from JP9046810A external-priority patent/JPH10242422A/ja
Priority to US09/030,248 priority patent/US6281540B1/en
Publication of JPH10242422A publication Critical patent/JPH10242422A/ja
Priority to US09/900,148 priority patent/US6455368B2/en
Publication of JPH10242422A5 publication Critical patent/JPH10242422A5/ja
Pending legal-status Critical Current

Links

JP9046810A 1997-02-28 1997-02-28 半導体記憶装置およびその製造方法 Pending JPH10242422A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9046810A JPH10242422A (ja) 1997-02-28 1997-02-28 半導体記憶装置およびその製造方法
US09/030,248 US6281540B1 (en) 1997-02-28 1998-02-25 Semiconductor memory device having bitlines of common height
US09/900,148 US6455368B2 (en) 1997-02-28 2001-07-09 Semiconductor memory device having bitlines of common height

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9046810A JPH10242422A (ja) 1997-02-28 1997-02-28 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH10242422A JPH10242422A (ja) 1998-09-11
JPH10242422A5 true JPH10242422A5 (cg-RX-API-DMAC7.html) 2005-01-27

Family

ID=12757693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9046810A Pending JPH10242422A (ja) 1997-02-28 1997-02-28 半導体記憶装置およびその製造方法

Country Status (2)

Country Link
US (2) US6281540B1 (cg-RX-API-DMAC7.html)
JP (1) JPH10242422A (cg-RX-API-DMAC7.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242302B1 (en) * 1998-09-03 2001-06-05 Micron Technology, Inc. Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry
US6346454B1 (en) * 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor
DE19926501A1 (de) * 1999-06-10 2000-12-21 Siemens Ag Verfahren zur Herstellung eines Halbleiterspeicherbauelements
US6333225B1 (en) * 1999-08-20 2001-12-25 Micron Technology, Inc. Integrated circuitry and methods of forming circuitry
KR100356135B1 (ko) * 1999-12-08 2002-10-19 동부전자 주식회사 반도체 장치의 제조방법
KR100403329B1 (ko) * 1999-12-30 2003-10-30 주식회사 하이닉스반도체 반도체소자의 비트라인 형성방법
KR100338775B1 (ko) * 2000-06-20 2002-05-31 윤종용 Ｄｒａｍ을 포함하는 반도체 소자의 콘택 구조체 및 그형성방법
US6406968B1 (en) * 2001-01-23 2002-06-18 United Microelectronics Corp. Method of forming dynamic random access memory
DE10119873A1 (de) 2001-04-24 2002-10-31 Infineon Technologies Ag Verfahren zur Herstellung von Metall/Halbleiter-Kontakten
JP4911838B2 (ja) * 2001-07-06 2012-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6656785B2 (en) * 2001-10-15 2003-12-02 Taiwan Semiconductor Manufacturing Co. Ltd MIM process for logic-based embedded RAM
KR100475084B1 (ko) * 2002-08-02 2005-03-10 삼성전자주식회사 Ｄｒａｍ 반도체 소자 및 그 제조방법
KR100505443B1 (ko) * 2002-12-26 2005-08-04 주식회사 하이닉스반도체 반도체소자 제조방법
JP2004274025A (ja) 2003-02-21 2004-09-30 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP4744788B2 (ja) * 2003-05-22 2011-08-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7282757B2 (en) * 2003-10-20 2007-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. MIM capacitor structure and method of manufacture
US7557001B2 (en) * 2005-07-05 2009-07-07 Micron Technology, Inc. Semiconductor processing methods
KR100720261B1 (ko) * 2006-01-26 2007-05-23 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
JP2008042085A (ja) 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
US7888798B2 (en) * 2007-05-16 2011-02-15 Samsung Electronics Co., Ltd. Semiconductor devices including interlayer conductive contacts and methods of forming the same
US8120123B2 (en) 2007-09-18 2012-02-21 Samsung Electronics Co., Ltd. Semiconductor device and method of forming the same
DE102008047591B4 (de) 2007-09-18 2019-08-14 Samsung Electronics Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung mit reduzierter Dicke
JP2010219326A (ja) * 2009-03-17 2010-09-30 Elpida Memory Inc 半導体記憶装置及びその製造方法
KR101623123B1 (ko) 2009-07-23 2016-05-23 삼성전자주식회사 반도체소자 및 그 제조방법
JP2012099793A (ja) * 2010-10-07 2012-05-24 Elpida Memory Inc 半導体装置及びその製造方法
US9764153B2 (en) 2013-03-14 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method of forming same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591659A (en) * 1992-04-16 1997-01-07 Fujitsu Limited Process of producing a semiconductor device in which a height difference between a memory cell area and a peripheral area is eliminated
KR950012554B1 (ko) * 1992-06-24 1995-10-18 현대전자산업주식회사 고집적 반도체소자의 전하저장전극 제조방법
JP3603229B2 (ja) * 1994-02-09 2004-12-22 富士通株式会社 半導体記憶装置
US5629539A (en) 1994-03-09 1997-05-13 Kabushiki Kaisha Toshiba Semiconductor memory device having cylindrical capacitors
TW287313B (cg-RX-API-DMAC7.html) * 1995-02-20 1996-10-01 Matsushita Electric Industrial Co Ltd
JPH09191084A (ja) * 1996-01-10 1997-07-22 Nec Corp 半導体装置及びその製造方法
JP2755243B2 (ja) * 1996-01-23 1998-05-20 日本電気株式会社 半導体記憶装置およびその製造方法
KR100213209B1 (ko) * 1996-07-29 1999-08-02 윤종용 반도체장치의 제조방법
US5882535A (en) * 1997-02-04 1999-03-16 Micron Technology, Inc. Method for forming a hole in a semiconductor device
TW365065B (en) * 1997-07-19 1999-07-21 United Microelectronics Corp Embedded memory structure and manufacturing method thereof

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