JPH10208489A5 - - Google Patents
Info
- Publication number
- JPH10208489A5 JPH10208489A5 JP1997008542A JP854297A JPH10208489A5 JP H10208489 A5 JPH10208489 A5 JP H10208489A5 JP 1997008542 A JP1997008542 A JP 1997008542A JP 854297 A JP854297 A JP 854297A JP H10208489 A5 JPH10208489 A5 JP H10208489A5
- Authority
- JP
- Japan
- Prior art keywords
- high voltage
- magnitude
- load
- voltage generating
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00854297A JP3884810B2 (ja) | 1997-01-21 | 1997-01-21 | 高電圧発生装置 |
| US08/882,344 US5940283A (en) | 1997-01-21 | 1997-06-25 | High voltage generating device having variable boosting capability according to magnitude of load |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00854297A JP3884810B2 (ja) | 1997-01-21 | 1997-01-21 | 高電圧発生装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10208489A JPH10208489A (ja) | 1998-08-07 |
| JPH10208489A5 true JPH10208489A5 (enExample) | 2004-12-24 |
| JP3884810B2 JP3884810B2 (ja) | 2007-02-21 |
Family
ID=11696042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00854297A Expired - Fee Related JP3884810B2 (ja) | 1997-01-21 | 1997-01-21 | 高電圧発生装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5940283A (enExample) |
| JP (1) | JP3884810B2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6781439B2 (en) * | 1998-07-30 | 2004-08-24 | Kabushiki Kaisha Toshiba | Memory device pump circuit with two booster circuits |
| US6166960A (en) * | 1999-09-24 | 2000-12-26 | Microchip Technology, Incorporated | Method, system and apparatus for determining that a programming voltage level is sufficient for reliably programming an eeprom |
| DE19962523A1 (de) * | 1999-12-23 | 2001-08-02 | Texas Instruments Deutschland | Gleichspannungswandler und Verfahren zum Betreiben eines Gleichspannungswandlers |
| KR100387266B1 (ko) * | 1999-12-28 | 2003-06-11 | 주식회사 하이닉스반도체 | 전압제어회로 |
| DE10017920A1 (de) * | 2000-04-11 | 2001-10-25 | Infineon Technologies Ag | Ladungspumpenanordnung |
| US6917239B2 (en) * | 2000-10-24 | 2005-07-12 | Fujitsu Limited | Level shift circuit and semiconductor device |
| DE10106390A1 (de) * | 2001-02-12 | 2002-09-12 | Infineon Technologies Ag | Ladungspumpenanordnung zur Messung, Steuerung oder Regelung der Ausgangssignale einer Ladungspumpe |
| DE10107658A1 (de) * | 2001-02-19 | 2002-05-23 | Infineon Technologies Ag | Ladungspumpenanordnung zur Erzeugung positiver und negativer Ausgangsspannungen |
| US6424570B1 (en) * | 2001-06-26 | 2002-07-23 | Advanced Micro Devices, Inc. | Modulated charge pump with uses an analog to digital converter to compensate for supply voltage variations |
| JP3687597B2 (ja) * | 2001-11-30 | 2005-08-24 | ソニー株式会社 | 表示装置および携帯端末装置 |
| JP2003203488A (ja) | 2001-12-28 | 2003-07-18 | Mitsubishi Electric Corp | 不揮発性半導体メモリ |
| KR100404001B1 (ko) | 2001-12-29 | 2003-11-05 | 주식회사 하이닉스반도체 | 차지 펌프 회로 |
| JP3700173B2 (ja) * | 2002-05-28 | 2005-09-28 | ソニー株式会社 | 電圧変換制御回路及び方法 |
| US6957372B2 (en) | 2002-08-26 | 2005-10-18 | International Business Machines Corporation | Repair of address-specific leakage |
| JPWO2004030191A1 (ja) * | 2002-09-27 | 2006-01-26 | 株式会社日立製作所 | 半導体集積回路装置 |
| KR100568587B1 (ko) * | 2003-11-24 | 2006-04-07 | 삼성전자주식회사 | 승압전압 안정화장치 및 방법, 이를 갖는 승압전압생성장치 및 방법 |
| US7649402B1 (en) * | 2003-12-23 | 2010-01-19 | Tien-Min Chen | Feedback-controlled body-bias voltage source |
| US7692477B1 (en) * | 2003-12-23 | 2010-04-06 | Tien-Min Chen | Precise control component for a substrate potential regulation circuit |
| TWI267863B (en) | 2004-04-12 | 2006-12-01 | Samsung Electronics Co Ltd | High voltage generating circuit preserving charge pumping efficiency |
| JP2006236511A (ja) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | 半導体集積回路装置 |
| KR100769781B1 (ko) | 2005-08-25 | 2007-10-24 | 주식회사 하이닉스반도체 | 비휘발성 메모리 장치의 스텝-업 전압 발생 회로 |
| KR100728553B1 (ko) | 2005-09-12 | 2007-06-15 | 주식회사 하이닉스반도체 | 반도체 집적회로 및 그 내부전압 제어방법 |
| KR100821570B1 (ko) * | 2005-11-29 | 2008-04-14 | 주식회사 하이닉스반도체 | 고전압 발생 장치 |
| DE102006036546A1 (de) * | 2006-08-04 | 2008-02-21 | Qimonda Flash Gmbh & Co. Kg | Kapazitätsladestrombegrenzungseinrichtung, Ladungspumpenanordnung, Verfahren zum Begrenzen eines Ladestromes an einer Ladungspumpe und Verfahren zum Begrenzen des Ladestromes an einen Kondensator |
| US8270189B2 (en) * | 2007-05-31 | 2012-09-18 | International Rectifier Corporation | Charge circuit for optimizing gate voltage for improved efficiency |
| JP2009146467A (ja) * | 2007-12-11 | 2009-07-02 | Toshiba Corp | 半導体集積回路装置 |
| JP5328525B2 (ja) * | 2009-07-02 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9318161B2 (en) * | 2012-11-16 | 2016-04-19 | Freescale Semiconductor, Inc. | Non-volatile memory robust start-up using analog-to-digital converter |
| US9013229B2 (en) * | 2013-07-15 | 2015-04-21 | Texas Instruments Incorporated | Charge pump circuit |
| GB201506579D0 (en) | 2015-04-17 | 2015-06-03 | Dialog Semiconductor Uk Ltd | Charge pump |
| US9800143B2 (en) * | 2016-03-03 | 2017-10-24 | The Regents Of The University Of Michigan | Moving-sum charge pump |
| US10476382B2 (en) | 2016-03-03 | 2019-11-12 | The Regents Of The University Of Michigan | Energy harvester |
| US10826388B2 (en) | 2018-12-11 | 2020-11-03 | Texas Instruments Incorporated | Charge pump circuits |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61124227A (ja) * | 1984-11-19 | 1986-06-12 | 日産自動車株式会社 | 負荷状態判別装置 |
| IT1258242B (it) * | 1991-11-07 | 1996-02-22 | Samsung Electronics Co Ltd | Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione |
| JPH05325580A (ja) * | 1992-05-28 | 1993-12-10 | Mitsubishi Electric Corp | 不揮発性メモリ |
| US5337013A (en) * | 1992-06-10 | 1994-08-09 | Ford Motor Company | Method and apparatus for monitoring the operation of electrical loads in an automotive vehicle |
| JP3025398B2 (ja) * | 1993-08-13 | 2000-03-27 | 旭化成マイクロシステム株式会社 | 高電圧スイッチング回路 |
| US5526253A (en) * | 1993-09-22 | 1996-06-11 | Advanced Micro Devices, Inc. | Low power voltage boost circuit with regulated output |
| JP3090833B2 (ja) * | 1993-12-28 | 2000-09-25 | 株式会社東芝 | 半導体記憶装置 |
| US5553295A (en) * | 1994-03-23 | 1996-09-03 | Intel Corporation | Method and apparatus for regulating the output voltage of negative charge pumps |
| US5563779A (en) * | 1994-12-05 | 1996-10-08 | Motorola, Inc. | Method and apparatus for a regulated supply on an integrated circuit |
| US5684682A (en) * | 1995-07-19 | 1997-11-04 | Motorola, Inc. | Method and apparatus for selectable DC to DC conversion |
| US5760637A (en) * | 1995-12-11 | 1998-06-02 | Sipex Corporation | Programmable charge pump |
-
1997
- 1997-01-21 JP JP00854297A patent/JP3884810B2/ja not_active Expired - Fee Related
- 1997-06-25 US US08/882,344 patent/US5940283A/en not_active Expired - Lifetime
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