JPH10125928A5 - - Google Patents

Info

Publication number
JPH10125928A5
JPH10125928A5 JP1996299755A JP29975596A JPH10125928A5 JP H10125928 A5 JPH10125928 A5 JP H10125928A5 JP 1996299755 A JP1996299755 A JP 1996299755A JP 29975596 A JP29975596 A JP 29975596A JP H10125928 A5 JPH10125928 A5 JP H10125928A5
Authority
JP
Japan
Prior art keywords
insulating film
gate insulating
gate
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1996299755A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10125928A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP8299755A priority Critical patent/JPH10125928A/ja
Priority claimed from JP8299755A external-priority patent/JPH10125928A/ja
Publication of JPH10125928A publication Critical patent/JPH10125928A/ja
Publication of JPH10125928A5 publication Critical patent/JPH10125928A5/ja
Withdrawn legal-status Critical Current

Links

JP8299755A 1996-10-23 1996-10-23 半導体集積回路及びその作製方法 Withdrawn JPH10125928A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8299755A JPH10125928A (ja) 1996-10-23 1996-10-23 半導体集積回路及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8299755A JPH10125928A (ja) 1996-10-23 1996-10-23 半導体集積回路及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006136995A Division JP4584187B2 (ja) 2006-05-16 2006-05-16 半導体集積回路の作製方法

Publications (2)

Publication Number Publication Date
JPH10125928A JPH10125928A (ja) 1998-05-15
JPH10125928A5 true JPH10125928A5 (enrdf_load_html_response) 2005-04-28

Family

ID=17876594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8299755A Withdrawn JPH10125928A (ja) 1996-10-23 1996-10-23 半導体集積回路及びその作製方法

Country Status (1)

Country Link
JP (1) JPH10125928A (enrdf_load_html_response)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
EP1049167A3 (en) * 1999-04-30 2007-10-24 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW480554B (en) * 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW490713B (en) * 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP3538084B2 (ja) 1999-09-17 2004-06-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001189461A (ja) * 1999-10-21 2001-07-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びそれを用いた液晶表示装置
US6974972B1 (en) 1999-10-21 2005-12-13 Matsushita Electric Industrial Co., Ltd. Thin-film transistor, and liquid crystal display device using the same
JP4801249B2 (ja) * 1999-11-19 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6646287B1 (en) 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4801622B2 (ja) * 2000-05-12 2011-10-26 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6613620B2 (en) 2000-07-31 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4127466B2 (ja) * 2000-07-31 2008-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4954482B2 (ja) * 2000-07-31 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7592628B2 (en) * 2006-07-21 2009-09-22 Tpo Displays Corp. Display with thin film transistor devices having different electrical characteristics in pixel and driving regions
CN104241389B (zh) * 2013-06-21 2017-09-01 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法
CN104934373B (zh) * 2015-06-30 2018-10-26 厦门天马微电子有限公司 一种阵列基板及其制作方法

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