JPH08507870A - 蒸着方法 - Google Patents
蒸着方法Info
- Publication number
- JPH08507870A JPH08507870A JP6511896A JP51189694A JPH08507870A JP H08507870 A JPH08507870 A JP H08507870A JP 6511896 A JP6511896 A JP 6511896A JP 51189694 A JP51189694 A JP 51189694A JP H08507870 A JPH08507870 A JP H08507870A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- organometallic
- gold
- substrate
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 title abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 238000010894 electron beam technology Methods 0.000 claims abstract description 25
- 239000002245 particle Substances 0.000 claims abstract description 15
- 230000005855 radiation Effects 0.000 claims abstract description 14
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 31
- 239000010931 gold Substances 0.000 claims description 31
- 229910052737 gold Inorganic materials 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 17
- -1 barradiuno Chemical compound 0.000 claims description 15
- 125000002524 organometallic group Chemical group 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 4
- 238000006731 degradation reaction Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 3
- 229910052776 Thorium Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 48
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 40
- 239000010453 quartz Substances 0.000 description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 33
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 30
- 238000010521 absorption reaction Methods 0.000 description 21
- 238000005481 NMR spectroscopy Methods 0.000 description 20
- 238000004458 analytical method Methods 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 20
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 14
- 239000002904 solvent Substances 0.000 description 14
- QWTDNUCVQCZILF-UHFFFAOYSA-N isopentane Chemical compound CCC(C)C QWTDNUCVQCZILF-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 238000005160 1H NMR spectroscopy Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 10
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 8
- 125000001153 fluoro group Chemical group F* 0.000 description 8
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 8
- 238000005191 phase separation Methods 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 7
- 239000011541 reaction mixture Substances 0.000 description 7
- 235000013024 sodium fluoride Nutrition 0.000 description 7
- 239000011775 sodium fluoride Substances 0.000 description 7
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 6
- AFABGHUZZDYHJO-UHFFFAOYSA-N dimethyl butane Natural products CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000004293 19F NMR spectroscopy Methods 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 3
- 229910003803 Gold(III) chloride Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003682 fluorination reaction Methods 0.000 description 3
- RJHLTVSLYWWTEF-UHFFFAOYSA-K gold trichloride Chemical compound Cl[Au](Cl)Cl RJHLTVSLYWWTEF-UHFFFAOYSA-K 0.000 description 3
- ZBKIUFWVEIBQRT-UHFFFAOYSA-N gold(1+) Chemical compound [Au+] ZBKIUFWVEIBQRT-UHFFFAOYSA-N 0.000 description 3
- CBMIPXHVOVTTTL-UHFFFAOYSA-N gold(3+) Chemical compound [Au+3] CBMIPXHVOVTTTL-UHFFFAOYSA-N 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000013110 organic ligand Substances 0.000 description 3
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- MPPPKRYCTPRNTB-UHFFFAOYSA-N 1-bromobutane Chemical compound CCCCBr MPPPKRYCTPRNTB-UHFFFAOYSA-N 0.000 description 2
- XILIYVSXLSWUAI-UHFFFAOYSA-N 2-(diethylamino)ethyl n'-phenylcarbamimidothioate;dihydrobromide Chemical compound Br.Br.CCN(CC)CCSC(N)=NC1=CC=CC=C1 XILIYVSXLSWUAI-UHFFFAOYSA-N 0.000 description 2
- SZMVXMBFSDHUOV-UHFFFAOYSA-M CCC(C)[Au](C(C)CC)F Chemical group CCC(C)[Au](C(C)CC)F SZMVXMBFSDHUOV-UHFFFAOYSA-M 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 241000488925 Thesium Species 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001649 bromium compounds Chemical class 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- UTLYKVGGKZYRRQ-UHFFFAOYSA-L dibutyltin(2+);difluoride Chemical compound CCCC[Sn](F)(F)CCCC UTLYKVGGKZYRRQ-UHFFFAOYSA-L 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical group 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002344 gold compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 150000003057 platinum Chemical class 0.000 description 2
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- FBEIPJNQGITEBL-UHFFFAOYSA-J tetrachloroplatinum Chemical compound Cl[Pt](Cl)(Cl)Cl FBEIPJNQGITEBL-UHFFFAOYSA-J 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BOSAWIQFTJIYIS-UHFFFAOYSA-N 1,1,1-trichloro-2,2,2-trifluoroethane Chemical compound FC(F)(F)C(Cl)(Cl)Cl BOSAWIQFTJIYIS-UHFFFAOYSA-N 0.000 description 1
- 240000007124 Brassica oleracea Species 0.000 description 1
- 235000003899 Brassica oleracea var acephala Nutrition 0.000 description 1
- 235000012905 Brassica oleracea var viridis Nutrition 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- MYOLVILCWNVCJX-UHFFFAOYSA-M C(C)(C)(C)[Pt]F Chemical compound C(C)(C)(C)[Pt]F MYOLVILCWNVCJX-UHFFFAOYSA-M 0.000 description 1
- SNEAAPDYPDGHBK-UHFFFAOYSA-M C(CC)[Pt]F Chemical compound C(CC)[Pt]F SNEAAPDYPDGHBK-UHFFFAOYSA-M 0.000 description 1
- CFYGXNGJVWMVSR-UHFFFAOYSA-M C(CCC)[Au](Br)CCCC Chemical class C(CCC)[Au](Br)CCCC CFYGXNGJVWMVSR-UHFFFAOYSA-M 0.000 description 1
- PYKLONYONORCTJ-UHFFFAOYSA-N C(CCC)[Pt] Chemical compound C(CCC)[Pt] PYKLONYONORCTJ-UHFFFAOYSA-N 0.000 description 1
- BWUJTVLZRDPZML-UHFFFAOYSA-N C1(CCCCC1)[Au] Chemical class C1(CCCCC1)[Au] BWUJTVLZRDPZML-UHFFFAOYSA-N 0.000 description 1
- CGYREYICSLQDOJ-UHFFFAOYSA-L CCCC[Au](F)F Chemical compound CCCC[Au](F)F CGYREYICSLQDOJ-UHFFFAOYSA-L 0.000 description 1
- MIEFVQIJSAGPBZ-UHFFFAOYSA-N CCC[Mg] Chemical compound CCC[Mg] MIEFVQIJSAGPBZ-UHFFFAOYSA-N 0.000 description 1
- MYDZEJBESLSTNT-UHFFFAOYSA-N C[Au]C1CCCCC1 Chemical compound C[Au]C1CCCCC1 MYDZEJBESLSTNT-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000001460 carbon-13 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- HEDRZPFGACZZDS-MICDWDOJSA-N deuterated chloroform Substances [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 1
- RJGHQTVXGKYATR-UHFFFAOYSA-L dibutyl(dichloro)stannane Chemical compound CCCC[Sn](Cl)(Cl)CCCC RJGHQTVXGKYATR-UHFFFAOYSA-L 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002518 distortionless enhancement with polarization transfer Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000000806 fluorine-19 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000006317 isomerization reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- LWLPYZUDBNFNAH-UHFFFAOYSA-M magnesium;butane;bromide Chemical compound [Mg+2].[Br-].CCC[CH2-] LWLPYZUDBNFNAH-UHFFFAOYSA-M 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229920005588 metal-containing polymer Polymers 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 125000002577 pseudohalo group Chemical group 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006894 reductive elimination reaction Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 description 1
- 229960002799 stannous fluoride Drugs 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
Landscapes
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Drying Of Semiconductors (AREA)
- Chemically Coating (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.輻射ビームまたは粒子ビームの効果の下に劣化して蒸着物および劣化化合 物残さを生成しうる化合物を基材に塗布する工程と、前記化合物の選択された表 面領域に前記輻射ビームまたは粒子ビームを照射する工程と、劣化した前記化合 物残さおよび未変化の前記化合物を前記基材から除去する工程とを含む化学蒸着 方法。 2.前記蒸着物が電導性材料であり、集積回路を製造するために行われる請求 項1に記載の方法。 3.前記基材が透明または半透明の材料であり、前記蒸着物が不透明であり、 フォトマスクを製造するために行われる請求項1に記載の方法。 4.前記化合物が有機金属材料である請求項1から3までのいずれかに記載の 方法。 5.前記化合物が有機金属フッ化物である請求項1から4までのいずれかに記 載の方法。 6.前記化合物が金、白金、バラジウノ、または錫の有機金属フッ化物である 請求項1から5までのいずれかに記載の方法。 7.前記化合物がテトラ-sec-ブチル二金二フッ化物である請求項1から6ま でのいずれかに記載の方法。 8.前記基材への塗布工程の後、かつ、前記輻射ビームまたは粒子ビームの照 射工程の前に、前記化合物にマイクロ波を照射する工程をさらに含む請求項1か ら7までのいずれかに記載の方法。 9.有機金属蒸気蒸着(OMVD)法により前記化合物を前記基材に塗布する請求 項1から7までのいずれかに記載の方法。 10.前記化合物をレーザービーム、紫外線ビームおよび/または電子ビームに より劣化させる請求項1から9までのいずれかに記載の方法。 11.請求項1、2および4〜10のうちのいずれかに記載の方法により得られる 集積回路。 12.請求項1および3〜10のうちのいずれかに記載の方法により得られるフォ トマスク。 13.ナノメータスケールの解像度を持つ、請求項11に記載の集積回路または請 求項12に記載のフォトマスク。 14.請求項12または13に記載のフォトマスクを用いて製造された集積回路。 15.金の有機金属フッ化物。 16.請求項1から10までのいずれかに記載の方法における有機金属化合物の用 途。 17.前記有機金属化合物が金、白金、パラジウムまたは錫の有機金属フッ化物 である請求項16に記載の用途。 18.請求項1から10までのいずれかに記載の方法における輻射ビームまたは粒 子ビームの用途。 19.請求項5から10までのいずれかに記載の方法に好適に用いられるフッ化有 機金属化合物の製造方法であって、塩化もしくは臭化有機金属化合物にフッ化ナ トリウムを加える工程を含む、フッ化有機金属化合物の製造方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9224233.8 | 1992-11-19 | ||
GB929224233A GB9224233D0 (en) | 1992-11-19 | 1992-11-19 | Photomask |
GB9306446.7 | 1993-03-27 | ||
GB939306446A GB9306446D0 (en) | 1993-03-27 | 1993-03-27 | Photomask |
GB939317750A GB9317750D0 (en) | 1993-08-26 | 1993-08-26 | Photomask |
GB9317750.9 | 1993-08-26 | ||
PCT/GB1993/002391 WO1994011787A1 (en) | 1992-11-19 | 1993-11-19 | Method of deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08507870A true JPH08507870A (ja) | 1996-08-20 |
JP3416134B2 JP3416134B2 (ja) | 2003-06-16 |
Family
ID=27266467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51189694A Expired - Fee Related JP3416134B2 (ja) | 1992-11-19 | 1993-11-19 | 付着方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US5821017A (ja) |
EP (1) | EP0670055B1 (ja) |
JP (1) | JP3416134B2 (ja) |
AT (1) | ATE153147T1 (ja) |
AU (1) | AU5531294A (ja) |
CA (1) | CA2149645A1 (ja) |
DE (1) | DE69310763T2 (ja) |
SG (1) | SG65569A1 (ja) |
WO (1) | WO1994011787A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009519594A (ja) * | 2005-12-13 | 2009-05-14 | コミシリア ア レネルジ アトミック | 反射リソグラフィーマスクの製造方法および前記方法により得られるマスク |
JP2016212410A (ja) * | 2015-04-30 | 2016-12-15 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | マスクの製造方法 |
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JP3540047B2 (ja) * | 1995-03-31 | 2004-07-07 | 株式会社島津製作所 | 微細パターン作成方法 |
DE19618447A1 (de) * | 1996-05-08 | 1997-11-20 | Studiengesellschaft Kohle Mbh | Lithographisches Verfahren zur Erzeugung von Nanostrukturen auf Oberflächen |
RU2129320C1 (ru) * | 1998-05-22 | 1999-04-20 | Гурович Борис Аронович | Способ формирования проводящей структуры |
DE19934089A1 (de) * | 1999-07-19 | 2001-01-25 | Univ Schiller Jena | Verfahren zur Erzeugung elektrisch leitender Bereiche in mehrkomponentigen Materialien |
US7427529B2 (en) * | 2000-06-06 | 2008-09-23 | Simon Fraser University | Deposition of permanent polymer structures for OLED fabrication |
US7074640B2 (en) | 2000-06-06 | 2006-07-11 | Simon Fraser University | Method of making barrier layers |
US7067346B2 (en) * | 2000-06-06 | 2006-06-27 | Simon Foster University | Titanium carboxylate films for use in semiconductor processing |
EP1305824A4 (en) | 2000-06-06 | 2007-07-25 | Univ Fraser Simon | METHOD FOR MANUFACTURING ELECTRONIC MATERIALS |
US6786978B2 (en) * | 2000-08-03 | 2004-09-07 | Texas Instruments Incorporated | Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching |
GB0103495D0 (en) * | 2001-02-13 | 2001-03-28 | Univ Dundee | Methods of preparing organmetallic compounds and novel organmetallic dimers |
US6777036B2 (en) | 2001-06-06 | 2004-08-17 | Simon Fraser University | Method for the deposition of materials from mesomorphous films |
US20050103272A1 (en) * | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
KR100878236B1 (ko) * | 2002-06-12 | 2009-01-13 | 삼성전자주식회사 | 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법 |
CN1317424C (zh) * | 2003-11-25 | 2007-05-23 | 中国科学院化学研究所 | 微波辅助镀金的制备方法 |
US7294449B1 (en) | 2003-12-31 | 2007-11-13 | Kovio, Inc. | Radiation patternable functional materials, methods of their use, and structures formed therefrom |
US8802346B2 (en) | 2008-08-07 | 2014-08-12 | Pryog, Llc | Metal compositions and methods of making same |
US8965159B1 (en) | 2013-11-07 | 2015-02-24 | International Business Machines Corporation | Implementing twisted pair waveguide for electronic substrates |
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US4444801A (en) * | 1981-01-14 | 1984-04-24 | Hitachi, Ltd. | Method and apparatus for correcting transparent defects on a photomask |
US4714627A (en) * | 1984-11-29 | 1987-12-22 | Ontario Development Corp. | Method of gold deposition using volatile organogold complexes |
US5230970A (en) * | 1985-05-20 | 1993-07-27 | At&T Bell Laboratories | Method of forming metal regions |
US4869930A (en) * | 1987-07-10 | 1989-09-26 | International Business Machines Corporation | Method for preparing substrates for deposition of metal seed from an organometallic vapor for subsequent electroless metallization |
US4888204A (en) * | 1988-09-12 | 1989-12-19 | Hughes Aircraft Company | Photochemical deposition of high purity gold films |
US5104481A (en) * | 1988-09-28 | 1992-04-14 | Lasa Industries, Inc. | Method for fabricating laser generated I.C. masks |
DE3841643C2 (de) * | 1988-12-10 | 1999-07-01 | Merck Patent Gmbh | Metallorganische Verbindungen und deren Verwendung |
US5169579A (en) * | 1989-12-04 | 1992-12-08 | Board Of Regents, The University Of Texas System | Catalyst and plasma assisted nucleation and renucleation of gas phase selective laser deposition |
US5104684A (en) * | 1990-05-25 | 1992-04-14 | Massachusetts Institute Of Technology | Ion beam induced deposition of metals |
JPH0799791B2 (ja) * | 1992-04-15 | 1995-10-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 透明基板上の回路ライン接続方法 |
-
1993
- 1993-11-19 WO PCT/GB1993/002391 patent/WO1994011787A1/en active IP Right Grant
- 1993-11-19 AU AU55312/94A patent/AU5531294A/en not_active Abandoned
- 1993-11-19 DE DE69310763T patent/DE69310763T2/de not_active Expired - Fee Related
- 1993-11-19 AT AT94900242T patent/ATE153147T1/de not_active IP Right Cessation
- 1993-11-19 SG SG1996004794A patent/SG65569A1/en unknown
- 1993-11-19 US US08/436,394 patent/US5821017A/en not_active Expired - Lifetime
- 1993-11-19 JP JP51189694A patent/JP3416134B2/ja not_active Expired - Fee Related
- 1993-11-19 EP EP94900242A patent/EP0670055B1/en not_active Expired - Lifetime
- 1993-11-19 CA CA002149645A patent/CA2149645A1/en not_active Abandoned
-
1998
- 1998-10-13 US US09/170,346 patent/US6071676A/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009519594A (ja) * | 2005-12-13 | 2009-05-14 | コミシリア ア レネルジ アトミック | 反射リソグラフィーマスクの製造方法および前記方法により得られるマスク |
JP2016212410A (ja) * | 2015-04-30 | 2016-12-15 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | マスクの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP3416134B2 (ja) | 2003-06-16 |
US5821017A (en) | 1998-10-13 |
EP0670055A1 (en) | 1995-09-06 |
WO1994011787A1 (en) | 1994-05-26 |
DE69310763T2 (de) | 1997-12-11 |
AU5531294A (en) | 1994-06-08 |
US6071676A (en) | 2000-06-06 |
DE69310763D1 (de) | 1997-06-19 |
CA2149645A1 (en) | 1994-05-26 |
SG65569A1 (en) | 1999-06-22 |
EP0670055B1 (en) | 1997-05-14 |
ATE153147T1 (de) | 1997-05-15 |
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