JPH0834312B2 - 縦形電界効果トランジスタ - Google Patents

縦形電界効果トランジスタ

Info

Publication number
JPH0834312B2
JPH0834312B2 JP63308285A JP30828588A JPH0834312B2 JP H0834312 B2 JPH0834312 B2 JP H0834312B2 JP 63308285 A JP63308285 A JP 63308285A JP 30828588 A JP30828588 A JP 30828588A JP H0834312 B2 JPH0834312 B2 JP H0834312B2
Authority
JP
Japan
Prior art keywords
layer
gate
window
effect transistor
source layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63308285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02154469A (ja
Inventor
和広 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP63308285A priority Critical patent/JPH0834312B2/ja
Priority to DE3940388A priority patent/DE3940388A1/de
Priority to FR8916139A priority patent/FR2640081A1/fr
Publication of JPH02154469A publication Critical patent/JPH02154469A/ja
Publication of JPH0834312B2 publication Critical patent/JPH0834312B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP63308285A 1988-12-06 1988-12-06 縦形電界効果トランジスタ Expired - Lifetime JPH0834312B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP63308285A JPH0834312B2 (ja) 1988-12-06 1988-12-06 縦形電界効果トランジスタ
DE3940388A DE3940388A1 (de) 1988-12-06 1989-12-06 Vertikal-feldeffekttransistor
FR8916139A FR2640081A1 (fr) 1988-12-06 1989-12-06 Transistor a effet de champ vertical

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63308285A JPH0834312B2 (ja) 1988-12-06 1988-12-06 縦形電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPH02154469A JPH02154469A (ja) 1990-06-13
JPH0834312B2 true JPH0834312B2 (ja) 1996-03-29

Family

ID=17979192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63308285A Expired - Lifetime JPH0834312B2 (ja) 1988-12-06 1988-12-06 縦形電界効果トランジスタ

Country Status (3)

Country Link
JP (1) JPH0834312B2 (enrdf_load_stackoverflow)
DE (1) DE3940388A1 (enrdf_load_stackoverflow)
FR (1) FR2640081A1 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317184A (en) * 1992-11-09 1994-05-31 Harris Corporation Device and method for improving current carrying capability in a semiconductor device
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
EP0768714B1 (en) * 1995-10-09 2003-09-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Construction method for power devices with deep edge ring
DE69533134T2 (de) 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
DE69534919T2 (de) 1995-10-30 2007-01-25 Stmicroelectronics S.R.L., Agrate Brianza Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe
EP0772244B1 (en) * 1995-11-06 2000-03-22 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno MOS technology power device with low output resistance and low capacity and related manufacturing process
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
EP0782201B1 (en) * 1995-12-28 2000-08-30 STMicroelectronics S.r.l. MOS-technology power device integrated structure
EP0841702A1 (en) * 1996-11-11 1998-05-13 STMicroelectronics S.r.l. Lateral or vertical DMOSFET with high breakdown voltage
DE69839439D1 (de) 1998-05-26 2008-06-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
SE517852C2 (sv) 1999-12-15 2002-07-23 Ericsson Telefon Ab L M Effekttransistormodul, effektförstärkare samt förfarande vid framställning därav
JP6858091B2 (ja) * 2017-07-18 2021-04-14 株式会社 日立パワーデバイス 半導体装置およびその製造方法
WO2019077878A1 (ja) * 2017-10-17 2019-04-25 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN114820498B (zh) * 2022-04-20 2025-05-23 上海华力微电子有限公司 版图的局部图形密度分析方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688362A (en) * 1979-12-19 1981-07-17 Toshiba Corp Vertical type power mos transistor
JPS5889864A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd 絶縁ゲ−ト型半導体装置
EP0159663A3 (en) * 1984-04-26 1987-09-23 General Electric Company High-density v-groove mos-controlled thyristors, insulated-gate transistors, and mosfets, and methods for fabrication
JPH0614550B2 (ja) * 1984-05-26 1994-02-23 株式会社東芝 半導体装置
JPS60254658A (ja) * 1984-05-30 1985-12-16 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
JPH0821553B2 (ja) * 1986-02-03 1996-03-04 株式会社日立製作所 多重拡散方法
JPS62232167A (ja) * 1986-04-02 1987-10-12 Nissan Motor Co Ltd 半導体装置
EP0255970B1 (en) * 1986-08-08 1993-12-15 Philips Electronics Uk Limited A method of manufacturing an insulated gate field effect transistor

Also Published As

Publication number Publication date
FR2640081B1 (enrdf_load_stackoverflow) 1995-03-17
FR2640081A1 (fr) 1990-06-08
JPH02154469A (ja) 1990-06-13
DE3940388C2 (enrdf_load_stackoverflow) 1993-07-29
DE3940388A1 (de) 1990-08-23

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