JPH08330601A5 - - Google Patents

Info

Publication number
JPH08330601A5
JPH08330601A5 JP1996066041A JP6604196A JPH08330601A5 JP H08330601 A5 JPH08330601 A5 JP H08330601A5 JP 1996066041 A JP1996066041 A JP 1996066041A JP 6604196 A JP6604196 A JP 6604196A JP H08330601 A5 JPH08330601 A5 JP H08330601A5
Authority
JP
Japan
Prior art keywords
semiconductor region
semiconductor
region
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996066041A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08330601A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP8066041A priority Critical patent/JPH08330601A/ja
Priority claimed from JP8066041A external-priority patent/JPH08330601A/ja
Publication of JPH08330601A publication Critical patent/JPH08330601A/ja
Publication of JPH08330601A5 publication Critical patent/JPH08330601A5/ja
Pending legal-status Critical Current

Links

JP8066041A 1995-03-30 1996-03-22 半導体装置およびその製造方法 Pending JPH08330601A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8066041A JPH08330601A (ja) 1995-03-30 1996-03-22 半導体装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7335495 1995-03-30
JP7-73354 1995-03-30
JP8066041A JPH08330601A (ja) 1995-03-30 1996-03-22 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH08330601A JPH08330601A (ja) 1996-12-13
JPH08330601A5 true JPH08330601A5 (enrdf_load_stackoverflow) 2006-05-25

Family

ID=26407217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8066041A Pending JPH08330601A (ja) 1995-03-30 1996-03-22 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPH08330601A (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3405681B2 (ja) 1997-07-31 2003-05-12 株式会社東芝 半導体装置
JP3356162B2 (ja) * 1999-10-19 2002-12-09 株式会社デンソー 半導体装置及びその製造方法
JP4783975B2 (ja) * 2000-11-21 2011-09-28 富士電機株式会社 Ｍｉｓ半導体装置およびその製造方法
JP2002231950A (ja) 2001-01-30 2002-08-16 Takuo Sugano 完全反転型ｓｏｉｍｏｓｆｅｔ
US7531888B2 (en) * 2006-11-30 2009-05-12 Fairchild Semiconductor Corporation Integrated latch-up free insulated gate bipolar transistor
JP5280056B2 (ja) * 2008-01-10 2013-09-04 シャープ株式会社 Ｍｏｓ電界効果トランジスタ
JP5923242B2 (ja) * 2011-02-09 2016-05-24 サンケン電気株式会社 化合物半導体装置及び化合物半導体装置の製造方法
JP5729364B2 (ja) * 2011-12-28 2015-06-03 株式会社デンソー 横型の絶縁ゲート型バイポーラトランジスタを備えた半導体装置
JP6233874B2 (ja) * 2013-06-04 2017-11-22 ローム株式会社 半導体装置および半導体装置の製造方法
JP6450659B2 (ja) * 2015-08-04 2019-01-09 株式会社東芝 半導体装置
US11167375B2 (en) * 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
JP7075876B2 (ja) * 2018-12-25 2022-05-26 株式会社日立製作所 炭化ケイ素半導体装置、電力変換装置、３相モータシステム、自動車および鉄道車両
CN114068701B (zh) * 2020-07-30 2024-03-19 中芯北方集成电路制造(北京)有限公司 半导体结构及其形成方法
JP7528664B2 (ja) 2020-09-15 2024-08-06 住友電気工業株式会社 半導体装置
CN113990936B (zh) * 2021-12-23 2022-06-14 浙江大学杭州国际科创中心 一种基于不同栅极结构的mos管器件

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