JPH0820384B2 - 単結晶のｏｆ方位検出方法及び装置 - Google Patents

単結晶のｏｆ方位検出方法及び装置

Info

Publication number
JPH0820384B2
JPH0820384B2 JP3045458A JP4545891A JPH0820384B2 JP H0820384 B2 JPH0820384 B2 JP H0820384B2 JP 3045458 A JP3045458 A JP 3045458A JP 4545891 A JP4545891 A JP 4545891A JP H0820384 B2 JPH0820384 B2 JP H0820384B2
Authority
JP
Japan
Prior art keywords
single crystal
crystal ingot
orientation
ingot
detected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3045458A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04264241A (ja
Inventor
宏幸 伊部
誠一 寺島
積 桝井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP3045458A priority Critical patent/JPH0820384B2/ja
Priority to US07/838,046 priority patent/US5187729A/en
Priority to DE69214318T priority patent/DE69214318T2/de
Priority to EP92301356A priority patent/EP0500339B1/fr
Publication of JPH04264241A publication Critical patent/JPH04264241A/ja
Publication of JPH0820384B2 publication Critical patent/JPH0820384B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
    • G01N2223/1016—X-ray
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/33—Accessories, mechanical or electrical features scanning, i.e. relative motion for measurement of successive object-parts
    • G01N2223/3306—Accessories, mechanical or electrical features scanning, i.e. relative motion for measurement of successive object-parts object rotates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/604—Specific applications or type of materials monocrystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP3045458A 1991-02-19 1991-02-19 単結晶のｏｆ方位検出方法及び装置 Expired - Lifetime JPH0820384B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3045458A JPH0820384B2 (ja) 1991-02-19 1991-02-19 単結晶のｏｆ方位検出方法及び装置
US07/838,046 US5187729A (en) 1991-02-19 1992-02-19 Method and apparatus for detecting a crystallographic axis of a single crystal ingot for "of" determination
DE69214318T DE69214318T2 (de) 1991-02-19 1992-02-19 Verfahren und Vorrichtung zur Bestimmung der kristallographischen Achse eines Einkristallbarrens
EP92301356A EP0500339B1 (fr) 1991-02-19 1992-02-19 Procédé et dispositif pour déterminer l'axe cristallographique d'un lingot monocristallin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3045458A JPH0820384B2 (ja) 1991-02-19 1991-02-19 単結晶のｏｆ方位検出方法及び装置

Publications (2)

Publication Number Publication Date
JPH04264241A JPH04264241A (ja) 1992-09-21
JPH0820384B2 true JPH0820384B2 (ja) 1996-03-04

Family

ID=12719916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3045458A Expired - Lifetime JPH0820384B2 (ja) 1991-02-19 1991-02-19 単結晶のｏｆ方位検出方法及び装置

Country Status (4)

Country Link
US (1) US5187729A (fr)
EP (1) EP0500339B1 (fr)
JP (1) JPH0820384B2 (fr)
DE (1) DE69214318T2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2903916B2 (ja) * 1992-11-30 1999-06-14 信越半導体株式会社 半導体インゴット加工方法
JPH08222798A (ja) * 1995-02-15 1996-08-30 Mitsubishi Electric Corp 半導体レーザの製造方法
EP0738572B1 (fr) * 1995-04-22 2004-01-21 HCT Shaping Systems SA Procédé pour l'orientation de monocristaux pour le découpage dans une machine de découpage et dispositif pour la mise en oeuvre de ce procédé
JPH10160688A (ja) * 1996-12-04 1998-06-19 Rigaku Corp 単結晶インゴットのｘ線トポグラフィー方法および装置
US5768335A (en) * 1997-02-10 1998-06-16 Lucent Technologies Inc. Apparatus and method for measuring the orientation of a single crystal surface
US5966423A (en) * 1997-03-28 1999-10-12 Philips Electronics North America Corporation Arc diffractometer
US6055293A (en) * 1998-06-30 2000-04-25 Seh America, Inc. Method for identifying desired features in a crystal
US6760403B2 (en) 2001-10-25 2004-07-06 Seh America, Inc. Method and apparatus for orienting a crystalline body during radiation diffractometry
US6792075B2 (en) * 2002-08-21 2004-09-14 Hypernex, Inc. Method and apparatus for thin film thickness mapping
US7027557B2 (en) * 2004-05-13 2006-04-11 Jorge Llacer Method for assisted beam selection in radiation therapy planning
KR20100094484A (ko) * 2007-12-19 2010-08-26 아사히 가라스 가부시키가이샤 에테르 조성물
JP2009233819A (ja) * 2008-03-28 2009-10-15 Shin Etsu Handotai Co Ltd 単結晶インゴットの円筒研削装置および加工方法
DE102010007459B4 (de) * 2010-02-10 2012-01-19 Siltronic Ag Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem Kristall aus Halbleitermaterial
US8259901B1 (en) 2010-05-25 2012-09-04 Rubicon Technology, Inc. Intelligent machines and process for production of monocrystalline products with goniometer continual feedback
US9613728B2 (en) * 2013-03-15 2017-04-04 Proto Manufacturing Ltd. X-ray diffraction apparatus and method
WO2015125134A1 (fr) * 2014-02-21 2015-08-27 Gem Solar Ltd. Procédé et appareil de marquage interne de lingots et de plaquettes
CN108693893B (zh) * 2017-04-07 2021-01-12 中国科学院沈阳计算技术研究所有限公司 用于x射线单晶衍射仪的卡帕测角仪的防碰撞控制方法
US11781708B1 (en) * 2022-03-24 2023-10-10 Bruker Axs, Llc Low non-repetitive runout rotational mount

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065211A (en) * 1976-03-01 1977-12-27 The United States Of America As Represented By The Secretary Of The Army Precision X-ray diffraction system incorporating a laser aligner
JPH0743331B2 (ja) * 1985-11-15 1995-05-15 株式会社日立製作所 検出装置
US4884887A (en) * 1987-01-23 1989-12-05 Hewlett-Packard Company Method for positioning a crystal ingot

Also Published As

Publication number Publication date
JPH04264241A (ja) 1992-09-21
US5187729A (en) 1993-02-16
EP0500339A3 (en) 1993-07-28
EP0500339A2 (fr) 1992-08-26
EP0500339B1 (fr) 1996-10-09
DE69214318D1 (de) 1996-11-14
DE69214318T2 (de) 1997-04-24

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