JPH081919B2 - ワイヤボンデイング方法 - Google Patents

ワイヤボンデイング方法

Info

Publication number
JPH081919B2
JPH081919B2 JP2022754A JP2275490A JPH081919B2 JP H081919 B2 JPH081919 B2 JP H081919B2 JP 2022754 A JP2022754 A JP 2022754A JP 2275490 A JP2275490 A JP 2275490A JP H081919 B2 JPH081919 B2 JP H081919B2
Authority
JP
Japan
Prior art keywords
gold wire
less
wire
gold
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2022754A
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English (en)
Other versions
JPH03227543A (ja
Inventor
仁士 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Filing date
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2022754A priority Critical patent/JPH081919B2/ja
Publication of JPH03227543A publication Critical patent/JPH03227543A/ja
Publication of JPH081919B2 publication Critical patent/JPH081919B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄形パツケージのワイヤボンデイング方法に
関するものである。
〔従来の技術〕
電子機器の小型化、薄型化に伴い、それに使用される
プラスチツクパツケージ型の半導体集積回路（以下ICと
呼ぶ）も第６図に示すように表面実装タイプに変わつて
来ている。第６図は従来の表面実装タイプの部分断面斜
視図を示したもので、ICチツプ（１）を金属リードフレ
ームに接着後、金ワイヤ（３）で外部リード端子（４）
とICチツプ（１）上の電極（ボンデイングパツド）を結
線し、樹脂（５）のトランスフアーモールドで封止した
ものである。
さらに近年、この表面実装タイプパツケージがさらに
薄くなつて来ている。
第７図（ｂ）が標準の表面実装タイプの断面図で、第
７図（ａ）が全体の厚みが2mmから1mmに薄くなつた場合
の断面図である。
第８図は第７図（ａ）のようにパツケージの厚みが1m
mになつた時の断面の寸法関係を示す説明図である。
ICチツプ（１）の上面とパツケージの上面の厚みが従
来0.8mmに対して0.25mmとなる。この時図中、金ワイヤ
（３）のループ高さＨ（８）は0.2mm以下となるよう制
御する必要がある。
従来は第７図（ｂ）に示すように、上面との間隔が0.
8mm以上有り、特にループ高さＨは低い方に安定して制
御するのではなく、むしろ、高くして安定する方法をと
つていた。
〔発明が解決しようとする課題〕
従来の薄形パツケージのワイヤボンデイング方法は以
上のように構成されていたので、もし、金ワイヤのルー
プ高さが0.25mm以上となつた場合、金ワイヤ部がパツケ
ージ上面より露出し、素子の動作不良および信頼性が劣
化するという問題点があつた。
本発明は上記のような問題点を解消するためになされ
たもので、薄形パツケージにおいて、金ワイヤ部のパツ
ケージ上面への露出を防止するため、金ワイヤ材の特性
を規定することにより、安定して従来と同じボンデイン
グ方法にて薄形パツケージを得るワイヤボンデイング方
法を得ることを目的とする。
〔課題を解決するための手段および作用〕
本発明に係るワイヤボンデイング方法は、金ワイヤ材
に200ppm以下の複数の金属元素をドーピングし種々のワ
イヤ材でボンデイング実験を行ないループ高さＨが200
μｍ以下になる球状境界部より100μｍ以内の結晶粒の
大きさをみつけたものである。
〔実施例〕
以下、本発明の一実施例を図について説明する。
即ち、上記課題を解決する一実施例を説明するために
本発明のワイヤボンデイング方法とそのループ高さを決
める要因を第１図および第２図をもとに説明する。第１
図は本発明の一実施例であるワイヤボンドの１サイクル
を示す説明図で、（ａ）〜（ｇ）の順にワイヤボンデイ
ングを行なう。ループ高さを決めるプロセスは（ｇ）図
の放電により金ワイヤの先端にボールを作る所であり、
第２図をもとにその原理を説明する。
第２図（ａ）に示すように電気トーチ（９）とキヤピ
ラリチツプ（10）に保持された金ワイヤ（３）の間に10
00V程度の高電圧を架け、（ｂ）図のようにアーク放電
を行ない、金ワイヤ（３）を溶融させて球状にする。金
の融点は1063℃において溶融し、この溶融時に発生する
熱が金ワイヤ（３）の方向に向つて伝導される。球状境
界部より順次熱が伝導することにより、金ワイヤ材が熱
間加工され金属結晶が成長して行く。この時の結晶粒の
大きくなつたこの熱影響部分（第２図（ｃ）のｌの部
分）は金ワイヤ（３）の他の部分に比べ軟化し熱影響を
受けない部分との境界で屈曲し、この時の軟化部の長さ
ｌが、ループ高さＨを決める。
第３図はこの状態を示す説明図で、金ワイヤの種類A,
B,C各タイプの球状形成後の100μｍ以内の結晶粒の大き
さを確認しループ高さＨを測定した。
その結果を第４図に示す。タイプＡ（結晶粒62）の
み、ループ高さＨが200μｍ以下に抑えられることが判
つた。
これにより、100μｍ以内の結晶粒は50以上が必要で
あつた。
さらに、ボンデイング温度は250℃〜300℃であるた
め、ボンデイング中の熱伝導による金ワイヤ（３）の結
晶成長を防止するため、再結晶温度は250℃とした。
第５図は本実施例のワイヤボンデイング方法によつて
行つた場合の説明図で、図中符号は前記従来のものと同
一につき説明は省略する。
〔発明の効果〕
以上のように本発明によれば、従来のワイヤボンデイ
ング方法により、特に製造方法を変えることなく金ワイ
ヤ材の変更により、薄型パツケージの組立が容易に出来
るという効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例であるワイヤボンデイングの
動作方法を説明する説明図、第２図は金ワイヤ溶融の方
法を示す説明図、第３図は本発明の実験データを示す説
明図、第４図は本発明の実験データを示す説明図、第５
図は本発明のワイヤボンデイング方法による接続状態を
示す説明図、第６図は従来の表面実装タイプのプラスチ
ツクパツケージの断面斜視図、第７図は従来のパツケー
ジと従来の超薄型パツケージの断面比較図、第８図は従
来の超薄型パツケージの詳細断面図である。 （１）……ICチツプ、（２）……半田、（３）……金ワ
イヤ、（４）……外部リード端子、（５）……樹脂、
（６）……外部リード、（７）……ダイスパツド、
（８）……ループ高さＨ、（９）……電気トーチ、（1
0）……キヤピラリチツプ。 なお、図中、同一符号は同一、または相当部分を示す。

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】半導体集積回路素子上の電極と、外部引出
    しリード部を、30μｍφ以下の金ワイヤをキヤピラリチ
    ツプにより保持し、その先端を溶融して球状とし、これ
    を前記電極に熱圧着させた後、前記金ワイヤの他端を外
    部リードに熱圧着して結線を行なう、樹脂封止タイプの
    プラスチツクパツケージにおいて、前記プラスチツクパ
    ツケージの厚みが1mm以下で半導体素子の上面とパツケ
    ージ上面との間隔が0.3mm以下で構成される時、 使用する金ワイヤは、金以外の複数の金属添加元素を20
    0ppm以下ドーピングし、この金ワイヤ材の再加熱による
    再結晶温度を250℃以上に上げることにより、球状の溶
    融部から未溶融部との100μｍ以内の金ワイヤ部におい
    て、溶融時の熱伝導による金ワイヤ自体の再加熱によ
    る、結晶粒の成長をその結晶粒が50以上の金ワイヤ材を
    用いることにより、上記再加熱部の軟化領域を短くし、
    半導体素子上面の金ワイヤ球状圧着部と金ワイヤ屈曲最
    上部が0.2mm以下となることを特徴とするワイヤボンデ
    イング方法。
JP2022754A 1990-02-01 1990-02-01 ワイヤボンデイング方法 Expired - Lifetime JPH081919B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022754A JPH081919B2 (ja) 1990-02-01 1990-02-01 ワイヤボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022754A JPH081919B2 (ja) 1990-02-01 1990-02-01 ワイヤボンデイング方法

Publications (2)

Publication Number Publication Date
JPH03227543A JPH03227543A (ja) 1991-10-08
JPH081919B2 true JPH081919B2 (ja) 1996-01-10

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Country Status (1)

Country Link
JP (1) JPH081919B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050248039A1 (en) * 2002-09-30 2005-11-10 Toshihiro Miura Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0830229B2 (ja) * 1987-03-31 1996-03-27 三菱マテリアル株式会社 半導体装置のボンデイングワイヤ用Ａｕ合金極細線

Also Published As

Publication number Publication date
JPH03227543A (ja) 1991-10-08

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