JPS6052583B2 - ワイヤボンデイング方法 - Google Patents

ワイヤボンデイング方法

Info

Publication number
JPS6052583B2
JPS6052583B2 JP53033076A JP3307678A JPS6052583B2 JP S6052583 B2 JPS6052583 B2 JP S6052583B2 JP 53033076 A JP53033076 A JP 53033076A JP 3307678 A JP3307678 A JP 3307678A JP S6052583 B2 JPS6052583 B2 JP S6052583B2
Authority
JP
Japan
Prior art keywords
wire
solder
electrode
bonding method
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53033076A
Other languages
English (en)
Other versions
JPS54125969A (en
Inventor
詮 菊田
義夫 野中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53033076A priority Critical patent/JPS6052583B2/ja
Publication of JPS54125969A publication Critical patent/JPS54125969A/ja
Publication of JPS6052583B2 publication Critical patent/JPS6052583B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/7828—Resistance welding electrodes, i.e. for ohmic heating
    • H01L2224/78282—Resistance welding electrodes, i.e. for ohmic heating in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H01L2224/85815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は、半導体層上に形成された半田電極と細線（
ワイヤ）とを接続するワイヤボンディング方法に関する
。
トランジスタ装置においては、電極部に半田層を使用
したものがある。
これはアルミニウム電極よりも半田電極の方が安価であ
ることに起因する。ところで、かかる半田電極とリード
とを金、銀等の細線（ワイヤ）で接続するワイヤボンデ
ィングにあつては、半田電極とワイヤとの接続を電気抵
抗溶接法（特にパラレルギャップ方式）を用いて行つて
いる。このパラレルギャップ方式は、例えば第１図に示
すように、ステム（ペレット取付け台）５にペレット１
を取付、このペレット上に形成された半田電極（図には
エミッタ電極が示されている）２の表面に銀（Ａｇ）線
（ワイヤ）３を載置されたワイヤ３の半田層との接続部
における任意の２点（図ヰＢ、、Ｂ２）上部に２つの電
極をそれぞれ当接し、この電極を加圧しながら電圧を加
えるようにしたものである。すなわち、この電圧印加に
よつてワイヤ３の電極が接触している２点間に電流が流
れ、この電流によるジュール熱の発生で接触部分の半田
を溶カル、もつて溶接を行うものである。なお、６はペ
レット１とステム５とを接着する接着剤である。 とこ
ろで、前記抵抗溶接法を用いたワイヤボンディングにあ
つては、ペレットの電極となる半田層の厚さが電極形成
工程時の半田デツプ引上げ法の為引き上げ速度、方向の
バラツキに基づいて各ペレット間で大きくバラついてし
まうため、ボンディング強度にバラツキが生ずるという
問題を有する。
すなわち、半田の厚い部分はボンディング強度が保たれ
るが、半田の薄い部分は強度不足となり易くなる。これ
は、前記抵抗溶接法においては全てのペレットに対して
同一条件の荷重電圧を加えているために起る問題である
。かかる問題を解決するために本願発明者等は溶接時の
荷重電圧を今迄のものよりも更に増加せしめた。しかし
、予想に反して今度は薄い半田層の部分ではペレット表
面に傷が出来てしまうことが判明した。すなわち、第２
図に示した第１図におけるＡ−Ａ線断面図の如く、従来
の荷重電圧ではワイヤ３が半田層２表面に僅かに没する
状態となつていたのに対し、荷重電圧を増すことによつ
てワイヤは鎖線４の状態となり、その底部（図中ｘ）が
ペレット１にぶつかるようになり、傷を付けてしまうの
である。 このように、前記抵抗溶接法を用いたワイヤ
ボンディングにあつては種々の問題があり好ましいもの
ではなかつた。
したがつて本発明の目的とするところはボンデイング強
度のバラツキ及びボンデイング時の荷重、電圧によるペ
レツト表面に傷を生じさせることがないボンデイング方
法を提供することにあり、他の目的は製品の品質向上及
び歩留りの向上を図ることができるワイヤボンデイング
方法を提供することにある。
以下実施例により本発明を具体的に説明する。
先ず、第３図ａに示すように、ペレツト１に形成された
半田電極２上に銀ワイヤ３を載置し、このワイヤ３にお
ける半田電極部との接触個所を挾むようにして上部に所
定の間隔Ｄを置いた２つの電極４ａ，４ｂを配置する。
しかる後２つの電極４ａ，４ｂ間に図示しない電圧印加
手段により電圧を印加するとともに電極に荷重をかける
。このとき、電圧及び荷重は従来のそれよりも極めて低
いものとしなければならない。なぜならば、この段階で
の溶接は仮付のものであり、ワイヤ３が半田電極２内に
没入することによつてペレツト表面に到達してしまうの
を防ぐためだからである。したがつて、単に電極の自重
のみで特に荷重はかけないようにしてもよい。前記電圧
の印加によつて電極４ａ→ワイヤ３→電極４ｂを経由す
るように電流Ｉ（図中矢印）が流れ、ワイヤ３と半田電
極２との接触部にジユール熱が発生し、その部分の半田
層が溶ける。このため、同図ｂに示すように半田電極２
の表面にワイヤ３が僅かに没入し固定される状態となる
。次に、前記仮溶接終了後、半田層の溶融温度以．上に
なるような加熱を行う。
このときの加熱処理温度は半田層の組成比によつて異な
る。すなわち、鉛とスズとの比を９５：５とした半田層
については、３１３とＣ＋２０〜１００℃程度とし、７
０：３０の組成比のものについては、１６ｒＣ＋２０〜
１０σＣ程度でよ．い。そして、この加熱温度によれば
必ず半田電極は溶融するから、加熱時間は僅か数秒程度
で足りる。この溶融によつて第４図に示すように、ワイ
ヤ３がその自重で溶融半田電極２内に落下することにな
るから、その後の固化により、十分な溶接が行えるもの
となる。なお、このとき、前記加熱によつてステム５と
ペレツト１との間に存する接着剤も溶けることとなるが
、それにより不都合が生ずるわけではなく、むしろペレ
ツト付時に発生していたであろうボード（気泡）が減少
するという好結果が得られた。このように、本発明によ
れば、いわば二段構えのボンデイング方法となるため半
田厚のバラツキに関係なく良好な溶接が行えることとな
リボンデイング強度を高めることができる。
また、ボンデイング時にペレツト表面に衝撃を与えるも
のではないから傷を発生させることはない。さらに、加
熱処理によりペレツト付強度をも高めることができる。
以上のことから、品質の向上、歩留りの向上を図ること
ができるとともに、信頼性の向上にも寄与するものとな
る。本発明は半田電極を用いた半導体装置のボンデイン
グに広く利用できる。
【図面の簡単な説明】
第１図は従来の抵抗溶接法を説明するための斜視図、第
２図は従来の溶接状態を説明するための断面図、第３図
ａは本発明のボンデイング方法に使用される溶接法を説
明するための説明図、同図ｂは仮溶接の状態を説明する
ための断面図、第４図は加熱による溶接状態を説明する
ための断面図である。 １・・・・・ペレット、２・・・・・・半田電極、３・
・・・・ワイヤ、４ａ，４ｂ・・・・・・電極、５・・
・・・・ステム、６・・・接着剤。

Claims (1)

    【特許請求の範囲】
  1. １ 半導体層と細線とを半田層を介して接続するワイヤ
    ボンディング方法において、細線を半田層表面に対して
    荷重を与えながら細線を介した電気抵抗溶接により仮固
    定し、しかる後半田層が溶融するような温度で加熱処理
    を行うことを特徴とするワイヤボンディング方法。
JP53033076A 1978-03-24 1978-03-24 ワイヤボンデイング方法 Expired JPS6052583B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53033076A JPS6052583B2 (ja) 1978-03-24 1978-03-24 ワイヤボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53033076A JPS6052583B2 (ja) 1978-03-24 1978-03-24 ワイヤボンデイング方法

Publications (2)

Publication Number Publication Date
JPS54125969A JPS54125969A (en) 1979-09-29
JPS6052583B2 true JPS6052583B2 (ja) 1985-11-20

Family

ID=12376614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53033076A Expired JPS6052583B2 (ja) 1978-03-24 1978-03-24 ワイヤボンデイング方法

Country Status (1)

Country Link
JP (1) JPS6052583B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5992729A (en) * 1996-10-02 1999-11-30 Mcnc Tacking processes and systems for soldering

Also Published As

Publication number Publication date
JPS54125969A (en) 1979-09-29

Similar Documents

Publication Publication Date Title
JP3248778B2 (ja) 半田ワイヤーにボール部を形成する方法
JPS6052583B2 (ja) ワイヤボンデイング方法
JPS6232021B2 (ja)
JP2966079B2 (ja) リードフレーム、これを用いた半導体装置および半導体装置の実装方法
JP2535489B2 (ja) 固体電解コンデンサ―
JPH088284A (ja) ワイヤボンディング構造及びその補強方法
JPS62169433A (ja) 半導体装置の製造方法
JPS60194543A (ja) バンプ電極形成方法
JPH05152485A (ja) 半導体装置およびその製造方法
JPS5815252A (ja) バンプ構造
JPS603134A (ja) ワイヤボンデイング方法
JPS6379331A (ja) ワイヤボンデイング装置
JPS6210030B2 (ja)
JPH03208355A (ja) 半導体装置及びその製造方法
JPS5996742A (ja) 半田付け方法
JP2611715B2 (ja) 複合リードフレームの製法
JPS63164230A (ja) ワイヤボンディング方法
JP2001015666A (ja) 半導体装置及びその製造方法
JP2712595B2 (ja) 半導体装置の接合方法
JPS5518029A (en) Method of fabricating resin sealed type semiconductor device
JPH04264742A (ja) 半導体装置
JPH05144872A (ja) バンプ電極の接合方法
JPH02165645A (ja) 半導体装置とその製造方法
JPS62166548A (ja) 半田バンプ形成方法
JPH0565052B2 (ja)