JPH081919B2 - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH081919B2
JPH081919B2 JP2022754A JP2275490A JPH081919B2 JP H081919 B2 JPH081919 B2 JP H081919B2 JP 2022754 A JP2022754 A JP 2022754A JP 2275490 A JP2275490 A JP 2275490A JP H081919 B2 JPH081919 B2 JP H081919B2
Authority
JP
Japan
Prior art keywords
gold wire
less
wire
gold
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2022754A
Other languages
Japanese (ja)
Other versions
JPH03227543A (en
Inventor
仁士 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2022754A priority Critical patent/JPH081919B2/en
Publication of JPH03227543A publication Critical patent/JPH03227543A/en
Publication of JPH081919B2 publication Critical patent/JPH081919B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/481—Disposition
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
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    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄形パツケージのワイヤボンデイング方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wire bonding method for a thin package.

〔従来の技術〕[Conventional technology]

電子機器の小型化、薄型化に伴い、それに使用される
プラスチツクパツケージ型の半導体集積回路（以下ICと
呼ぶ）も第６図に示すように表面実装タイプに変わつて
来ている。第６図は従来の表面実装タイプの部分断面斜
視図を示したもので、ICチツプ（１）を金属リードフレ
ームに接着後、金ワイヤ（３）で外部リード端子（４）
とICチツプ（１）上の電極（ボンデイングパツド）を結
線し、樹脂（５）のトランスフアーモールドで封止した
ものである。As electronic devices have become smaller and thinner, the plastic package type semiconductor integrated circuits (hereinafter referred to as ICs) used therein have also been changed to the surface mount type as shown in FIG. FIG. 6 shows a partial cross-sectional perspective view of a conventional surface mount type, in which an IC chip (1) is bonded to a metal lead frame, and then a gold wire (3) is used to external lead terminals (4).
And the electrode (bonding pad) on the IC chip (1) are connected and sealed with a transfer mold of resin (5).

さらに近年、この表面実装タイプパツケージがさらに
薄くなつて来ている。Further, in recent years, this surface mount type package has become thinner.

第７図（ｂ）が標準の表面実装タイプの断面図で、第
７図（ａ）が全体の厚みが2mmから1mmに薄くなつた場合
の断面図である。FIG. 7 (b) is a sectional view of a standard surface mount type, and FIG. 7 (a) is a sectional view in the case where the total thickness is reduced from 2 mm to 1 mm.

第８図は第７図（ａ）のようにパツケージの厚みが1m
mになつた時の断面の寸法関係を示す説明図である。Fig. 8 shows that the thickness of the package is 1m as shown in Fig. 7 (a).
It is explanatory drawing which shows the dimensional relationship of the cross section when it reaches m.

ICチツプ（１）の上面とパツケージの上面の厚みが従
来0.8mmに対して0.25mmとなる。この時図中、金ワイヤ
（３）のループ高さＨ（８）は0.2mm以下となるよう制
御する必要がある。The thickness of the upper surface of the IC chip (1) and the upper surface of the package is 0.25 mm compared to 0.8 mm in the past. At this time, it is necessary to control the loop height H (8) of the gold wire (3) to be 0.2 mm or less in the figure.

従来は第７図（ｂ）に示すように、上面との間隔が0.
8mm以上有り、特にループ高さＨは低い方に安定して制
御するのではなく、むしろ、高くして安定する方法をと
つていた。Conventionally, as shown in Fig. 7 (b), the distance from the upper surface is 0.
It was 8 mm or more, and the loop height H was not controlled stably toward the lower side, but rather was raised and stabilized.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

従来の薄形パツケージのワイヤボンデイング方法は以
上のように構成されていたので、もし、金ワイヤのルー
プ高さが0.25mm以上となつた場合、金ワイヤ部がパツケ
ージ上面より露出し、素子の動作不良および信頼性が劣
化するという問題点があつた。The conventional wire bonding method for thin packages is configured as described above.If the gold wire loop height is 0.25 mm or more, the gold wire part is exposed from the upper surface of the package, and the device operation There was a problem that the defect and the reliability were deteriorated.

本発明は上記のような問題点を解消するためになされ
たもので、薄形パツケージにおいて、金ワイヤ部のパツ
ケージ上面への露出を防止するため、金ワイヤ材の特性
を規定することにより、安定して従来と同じボンデイン
グ方法にて薄形パツケージを得るワイヤボンデイング方
法を得ることを目的とする。The present invention has been made to solve the above problems, and in a thin package, in order to prevent the gold wire portion from being exposed to the upper surface of the package, by defining the characteristics of the gold wire material, stable Then, it is an object of the present invention to obtain a wire bonding method for obtaining a thin package by the same bonding method as the conventional one.

〔課題を解決するための手段および作用〕[Means and Actions for Solving the Problems]

本発明に係るワイヤボンデイング方法は、金ワイヤ材
に200ppm以下の複数の金属元素をドーピングし種々のワ
イヤ材でボンデイング実験を行ないループ高さＨが200
μｍ以下になる球状境界部より100μｍ以内の結晶粒の
大きさをみつけたものである。In the wire bonding method according to the present invention, a gold wire material is doped with a plurality of metal elements of 200 ppm or less, and a bonding experiment is conducted with various wire materials, and a loop height H is 200.
The size of the crystal grain within 100 μm from the spherical boundary portion of less than μm was found.

〔実施例〕〔Example〕

以下、本発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

即ち、上記課題を解決する一実施例を説明するために
本発明のワイヤボンデイング方法とそのループ高さを決
める要因を第１図および第２図をもとに説明する。第１
図は本発明の一実施例であるワイヤボンドの１サイクル
を示す説明図で、（ａ）〜（ｇ）の順にワイヤボンデイ
ングを行なう。ループ高さを決めるプロセスは（ｇ）図
の放電により金ワイヤの先端にボールを作る所であり、
第２図をもとにその原理を説明する。That is, the wire bonding method of the present invention and the factors that determine the loop height thereof will be described with reference to FIGS. 1 and 2 in order to explain an embodiment for solving the above problems. First
The figure is an explanatory view showing one cycle of wire bonding, which is an embodiment of the present invention. Wire bonding is performed in the order of (a) to (g). The process of determining the loop height is to make a ball at the tip of the gold wire by the discharge in (g),
The principle will be described with reference to FIG.

第２図（ａ）に示すように電気トーチ（９）とキヤピ
ラリチツプ（10）に保持された金ワイヤ（３）の間に10
00V程度の高電圧を架け、（ｂ）図のようにアーク放電
を行ない、金ワイヤ（３）を溶融させて球状にする。金
の融点は1063℃において溶融し、この溶融時に発生する
熱が金ワイヤ（３）の方向に向つて伝導される。球状境
界部より順次熱が伝導することにより、金ワイヤ材が熱
間加工され金属結晶が成長して行く。この時の結晶粒の
大きくなつたこの熱影響部分（第２図（ｃ）のｌの部
分）は金ワイヤ（３）の他の部分に比べ軟化し熱影響を
受けない部分との境界で屈曲し、この時の軟化部の長さ
ｌが、ループ高さＨを決める。As shown in Fig. 2 (a), there is a gap between the electric torch (9) and the gold wire (3) held by the capillary chip (10).
A high voltage of about 00V is applied, and arc discharge is performed as shown in FIG. 2 (b) to melt the gold wire (3) into a spherical shape. The melting point of gold melts at 1063 ° C., and the heat generated during this melting is conducted toward the gold wire (3). As the heat is sequentially conducted from the spherical boundary portion, the gold wire material is hot worked and the metal crystal grows. At this time, the heat-affected portion (the portion l in FIG. 2 (c)) where the crystal grains are large is softer than other portions of the gold wire (3) and bent at the boundary with the portion not affected by heat. However, the length l of the softened portion at this time determines the loop height H.

第３図はこの状態を示す説明図で、金ワイヤの種類A,
B,C各タイプの球状形成後の100μｍ以内の結晶粒の大き
さを確認しループ高さＨを測定した。FIG. 3 is an explanatory view showing this state. Kind A of the gold wire,
The size of the crystal grains within 100 μm after the spherical formation of each of B and C types was confirmed, and the loop height H was measured.

その結果を第４図に示す。タイプＡ（結晶粒62）の
み、ループ高さＨが200μｍ以下に抑えられることが判
つた。The results are shown in FIG. It has been found that the loop height H can be suppressed to 200 μm or less only for type A (crystal grain 62).

これにより、100μｍ以内の結晶粒は50以上が必要で
あつた。As a result, 50 or more crystal grains within 100 μm were required.

さらに、ボンデイング温度は250℃〜300℃であるた
め、ボンデイング中の熱伝導による金ワイヤ（３）の結
晶成長を防止するため、再結晶温度は250℃とした。Further, since the bonding temperature is 250 ° C to 300 ° C, the recrystallization temperature was set to 250 ° C in order to prevent crystal growth of the gold wire (3) due to heat conduction during bonding.

第５図は本実施例のワイヤボンデイング方法によつて
行つた場合の説明図で、図中符号は前記従来のものと同
一につき説明は省略する。FIG. 5 is an explanatory view of the case where the wire bonding method of the present embodiment is used. The reference numerals in the drawing are the same as those of the conventional one, and the description thereof will be omitted.

〔発明の効果〕〔The invention's effect〕

以上のように本発明によれば、従来のワイヤボンデイ
ング方法により、特に製造方法を変えることなく金ワイ
ヤ材の変更により、薄型パツケージの組立が容易に出来
るという効果がある。As described above, according to the present invention, it is possible to easily assemble a thin package by changing the gold wire material without changing the manufacturing method by the conventional wire bonding method.

【図面の簡単な説明】[Brief description of drawings]

第１図は本発明の一実施例であるワイヤボンデイングの
動作方法を説明する説明図、第２図は金ワイヤ溶融の方
法を示す説明図、第３図は本発明の実験データを示す説
明図、第４図は本発明の実験データを示す説明図、第５
図は本発明のワイヤボンデイング方法による接続状態を
示す説明図、第６図は従来の表面実装タイプのプラスチ
ツクパツケージの断面斜視図、第７図は従来のパツケー
ジと従来の超薄型パツケージの断面比較図、第８図は従
来の超薄型パツケージの詳細断面図である。 （１）……ICチツプ、（２）……半田、（３）……金ワ
イヤ、（４）……外部リード端子、（５）……樹脂、
（６）……外部リード、（７）……ダイスパツド、
（８）……ループ高さＨ、（９）……電気トーチ、（1
0）……キヤピラリチツプ。 なお、図中、同一符号は同一、または相当部分を示す。FIG. 1 is an explanatory view for explaining an operation method of wire bonding which is an embodiment of the present invention, FIG. 2 is an explanatory view for showing a method for melting a gold wire, and FIG. 3 is an explanatory view for showing experimental data of the present invention. FIG. 4 is an explanatory view showing experimental data of the present invention, FIG.
FIG. 6 is an explanatory view showing a connection state by the wire bonding method of the present invention, FIG. 6 is a sectional perspective view of a conventional surface mount type plastic package, and FIG. 7 is a sectional comparison of a conventional package and a conventional ultra-thin package. FIG. 8 is a detailed sectional view of a conventional ultra-thin package. (1) ... IC chip, (2) ... solder, (3) ... gold wire, (4) ... external lead terminal, (5) ... resin,
(6) …… External lead, (7) …… Die pad,
(8) …… loop height H, (9) …… electric torch, (1
0) …… Capillary chips. In the drawings, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】半導体集積回路素子上の電極と、外部引出
しリード部を、30μｍφ以下の金ワイヤをキヤピラリチ
ツプにより保持し、その先端を溶融して球状とし、これ
を前記電極に熱圧着させた後、前記金ワイヤの他端を外
部リードに熱圧着して結線を行なう、樹脂封止タイプの
プラスチツクパツケージにおいて、前記プラスチツクパ
ツケージの厚みが1mm以下で半導体素子の上面とパツケ
ージ上面との間隔が0.3mm以下で構成される時、 使用する金ワイヤは、金以外の複数の金属添加元素を20
0ppm以下ドーピングし、この金ワイヤ材の再加熱による
再結晶温度を250℃以上に上げることにより、球状の溶
融部から未溶融部との100μｍ以内の金ワイヤ部におい
て、溶融時の熱伝導による金ワイヤ自体の再加熱によ
る、結晶粒の成長をその結晶粒が50以上の金ワイヤ材を
用いることにより、上記再加熱部の軟化領域を短くし、
半導体素子上面の金ワイヤ球状圧着部と金ワイヤ屈曲最
上部が0.2mm以下となることを特徴とするワイヤボンデ
イング方法。A gold wire having a diameter of 30 μm or less is held by a capillary chip for an electrode on a semiconductor integrated circuit element and an external lead portion, and its tip is melted into a spherical shape, which is thermocompression-bonded to the electrode. , The other end of the gold wire is thermocompression bonded to an external lead for connection, in a resin-sealed plastic package, the thickness of the plastic package is 1 mm or less, and the distance between the upper surface of the semiconductor element and the upper surface of the package is 0.3 mm. When composed of the following, the gold wire used contains multiple metallic additive elements other than gold.
By doping 0ppm or less and raising the recrystallization temperature by reheating this gold wire material to 250 ° C or more, the gold wire portion within 100μm from the spherical fused portion to the unmelted portion is heated by heat conduction during melting. By reheating the wire itself, the growth of crystal grains is reduced by using a gold wire material whose crystal grains are 50 or more, to shorten the softened region of the reheated portion,
A wire bonding method characterized in that a gold wire spherical crimping portion on the upper surface of a semiconductor element and a gold wire bent uppermost portion are 0.2 mm or less.
JP2022754A 1990-02-01 1990-02-01 Wire bonding method Expired - Lifetime JPH081919B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022754A JPH081919B2 (en) 1990-02-01 1990-02-01 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022754A JPH081919B2 (en) 1990-02-01 1990-02-01 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH03227543A JPH03227543A (en) 1991-10-08
JPH081919B2 true JPH081919B2 (en) 1996-01-10

Family

ID=12091475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022754A Expired - Lifetime JPH081919B2 (en) 1990-02-01 1990-02-01 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH081919B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004032223A1 (en) * 2002-09-30 2006-02-02 株式会社ルネサステクノロジ Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0830229B2 (en) * 1987-03-31 1996-03-27 三菱マテリアル株式会社 Au alloy extra fine wire for bonding wire of semiconductor device

Also Published As

Publication number Publication date
JPH03227543A (en) 1991-10-08

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