JPS62126644A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS62126644A
JPS62126644A JP60266010A JP26601085A JPS62126644A JP S62126644 A JPS62126644 A JP S62126644A JP 60266010 A JP60266010 A JP 60266010A JP 26601085 A JP26601085 A JP 26601085A JP S62126644 A JPS62126644 A JP S62126644A
Authority
JP
Japan
Prior art keywords
wire
ball
capillary
bonding
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60266010A
Other languages
Japanese (ja)
Inventor
Tetsuo Ando
安藤 鉄男
Koichiro Atsumi
幸一郎 渥美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60266010A priority Critical patent/JPS62126644A/en
Publication of JPS62126644A publication Critical patent/JPS62126644A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
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    • H01L2224/78Apparatus for connecting with wire connectors
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Abstract

PURPOSE:To form a ball having a constant size all the time and to obtain excellent bonding, by controlling the amount of projection of a piece of wire from a capillary at a constant value, and fusing the entire part of the protruded wire. CONSTITUTION:In a ball forming process, a piece of gold wire 13 is protruded from the lower end of a capillary 15 by a specified length lambda in the wire cutting process in the previous cycle. Said length lambda is a length, which corresponds to a volume of a ball 16 having a spherical diameter phi just specified when the wire 13 is fused. At first, an electric torch 17 is moved to a position, which is separated from the lower end of the capillary 15 by an interval (d). Then a voltage is immediately applied across the wire 13 and the electric torch 17. Discharging occurs and the wire 13 is fused. Thus the ball 16 is formed. At this time, the amount of energy enough to fuse the entire part of the protruded length is applied.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はワイヤにボールを形成して接合するワイヤボン
ディング方法の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a wire bonding method in which a ball is formed on a wire and then bonded.

〔発明の技術晶背景とその問題点〕[Technical background of the invention and its problems]

一般に半導体部品の組立においては、ワイヤボンディン
グ作業がある。これは例えばICの組立においては、リ
ードフレームのリード部と、リードフレームに固定され
た。ベレットの電極パッド部との間をワイヤで接続する
作業であって、ワイヤを挿通したキャピラリを移動させ
てその先端から突出しているワイヤの一端を電極パッド
に圧接し。
Generally, wire bonding work is involved in the assembly of semiconductor components. For example, when assembling an IC, this is fixed to the lead portion of a lead frame and the lead frame. This is the work of connecting a wire to the electrode pad part of a pellet by moving a capillary through which the wire has been inserted, and pressing one end of the wire protruding from its tip to the electrode pad.

熱圧着または超音波によりボンディングし1次にキャピ
ラリを移動させて突出しているワイヤの他端をリード部
に圧接し同様にボンディングする。
Bonding is performed by thermocompression bonding or ultrasonic waves, and first, the capillary is moved to press the other end of the protruding wire to the lead portion, and bonding is performed in the same manner.

その後クランパがワイヤを保持したtt上昇してワイヤ
を切断し、最初の状態に戻る。
Thereafter, the clamper holds the wire and rises tt to cut the wire and return to the initial state.

上述したようにボンディングには第1ボンデイング工程
と第2ボンデイング工程とがあるが、第1ボンデイング
工程の接合を安定させるため、ボンディングに先立って
ワイヤにボールを形成することが行なわれている。これ
については、特公昭58−50022号公報に水素トー
チによる方法が、特公昭59−17977号公報1こは
電気トーチによる方法が記載されている。この電気トー
チによる方法を第4図および第5図を参照して略述する
と、キャピラリ(1)に挿通されたワイヤ(2)を予め
所定jlJだけギヤビラ1月1)の下端から突出させて
おき、この下方にキャピラリ(1)下端から間隔dの位
置に電気トーチ(3)を移動させ、放電によりワイヤ(
2)の下端部を加熱溶融させ、ボール(4)を形成する
As described above, bonding includes a first bonding process and a second bonding process, and in order to stabilize the bonding in the first bonding process, a ball is formed on the wire prior to bonding. Regarding this, a method using a hydrogen torch is described in Japanese Patent Publication No. 58-50022, and a method using an electric torch is described in Japanese Patent Publication No. 59-17977. This method using an electric torch will be briefly described with reference to FIGS. 4 and 5. The wire (2) inserted into the capillary (1) is made to protrude from the lower end of the gear villa by a predetermined distance in advance. , the electric torch (3) is moved below this to a position a distance d from the lower end of the capillary (1), and the wire (
The lower end of 2) is heated and melted to form a ball (4).

しかるに、安定した良好な接合を得るには接合条件を常
に一定に保つ必要があり、このためボール径φを一定に
制御することが重要である。ボール径φの変化には種々
な要素が関連し1例えば(イ)キャピラリ先端と電気ト
ーチとの距離d(ロ)キャピラリ先端からのワイヤの突
出量IC今放電時間に)放電電圧(ホ)放電電流などで
、これらの変動は直ちにボール径に影響する。従ってこ
れらの要素を制御することでボール径を調節しているが
、変動要素が多く刺餞に時間がかかるとか、ボール径の
誤差範囲が大きくなり易いとか1例えば第4図に破線で
示すように、ワイヤ(2)が傾いたりしても直らにボー
ル径が変わる不都合があった。才た銅ワイヤやアルミニ
ウムワイヤを用いた場合は、酸化防止のためシールドガ
ス雰囲気中でボール形成を行うが、これも放電が不安定
になり、ボール径のばらつく原因となる。
However, in order to obtain stable and good bonding, it is necessary to keep the bonding conditions constant, and therefore it is important to control the ball diameter φ to be constant. Various factors are related to the change in the ball diameter φ, such as (a) distance d between the capillary tip and the electric torch, (b) amount of wire protrusion from the capillary tip, IC current discharge time) discharge voltage, and (e) discharge. Due to current, etc., these fluctuations immediately affect the ball diameter. Therefore, the ball diameter is adjusted by controlling these elements, but there are many variables that make it time consuming to pierce the ball, and the error range of the ball diameter tends to become large.1 For example, as shown by the broken line in Figure 4, Another problem is that even if the wire (2) is tilted, the ball diameter changes immediately. When using old copper wire or aluminum wire, the ball is formed in a shielding gas atmosphere to prevent oxidation, but this also makes the discharge unstable and causes variations in the ball diameter.

〔発明の目的〕[Purpose of the invention]

本発明は上述の事情にかんがみてなされたもので、ボー
ルを常に一定の大きさに形成して、良好な接合が得られ
るワイヤボンディング方法を提供することを目的とする
The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a wire bonding method in which a ball is always formed to a constant size and a good bond can be obtained.

〔発明の概要〕[Summary of the invention]

本発明はキャピラリからのワイヤの突出量を。 In the present invention, the amount of protrusion of the wire from the capillary can be adjusted.

−足に制御するとともに、突出したワイヤ全体を溶融さ
せることにより常に−”・ぜの大きさのボールを形成し
て良好な接合か得られるワイヤポンディグ方法である。
- This is a wire bonding method that allows a good bond to be obtained by controlling the length of the wire and melting the entire protruding wire to always form a ball with a size of 1.5 mm.

〔発明の実施例〕[Embodiments of the invention]

以下1本発明の詳細を第1図〜第3図1こ示し実施例に
より説明する。本実施例は従来例に述べたと同様なIC
のワイヤボンディングに適用したもので、リードフレー
ムaυに同定されたベレットQ2+の位置を認識する位
置認識工程と、ボール形成工程と、第1ボンデイング工
程と、第2ボンデイング工程と、ワイヤ切断工程とから
構成されている。
The details of the present invention will be explained below with reference to embodiments shown in FIGS. 1 to 3. This embodiment uses an IC similar to that described in the conventional example.
This is applied to wire bonding, and includes a position recognition process for recognizing the position of the pellet Q2+ identified on the lead frame aυ, a ball forming process, a first bonding process, a second bonding process, and a wire cutting process. It is configured.

なお、本実施例においてはボール形成工程以外は一般公
知の方法と同様なので詳細な説明は省略する。
Incidentally, in this example, the steps other than the ball forming step are the same as those of the generally known method, so detailed explanation will be omitted.

位置認識工程は搬送されて来たベレッ)Hの位置をIT
Vカメラを用いて検出してボンディングの際の位置補正
を行なう工程である。次のボール形成工程においては、
金ワイヤ0:1は前サイクルのワイヤ切断工程で所定の
長さfだけキャピラリ0最下端から突出した状態となっ
ている。この長さJはワイヤ(1階が溶融した際に丁度
所定の球径φのボール6Gになる体積に見合う長さであ
る。このようなワイヤQ31の下端に対して、まず電気
トーチ(I7)がキャビ29 (151下端から間隔d
の位置に移動して来ると、直ちにワイヤ0りと電気トー
チ面との間に電圧が印加され、放電してワイヤ0旧ま溶
融し、ボール0eとなる。この際ワイヤ0には突出長さ
Jが全部溶融するに十分なエネルギー量を供給する。ま
た必要量以上にエネルギー量を供給してもキャビ21)
O9下端において溶融は停止するので突出量1を一定に
制御すれば常に一定径のボール(1[IOが得られる。
In the position recognition process, the position of the conveyed beret) is determined by IT.
This is a process of detecting using a V camera and correcting the position during bonding. In the next ball forming process,
The gold wire 0:1 is in a state where it protrudes from the lowermost end of the capillary 0 by a predetermined length f in the wire cutting process of the previous cycle. This length J is a length corresponding to the volume of the wire (when the first floor is melted, it will become a ball 6G with a predetermined spherical diameter φ). First, an electric torch (I7) is attached to the lower end of the wire Q31. is the distance d from the bottom of the cabinet 29 (151)
Immediately after the wire 0 moves to the position shown in FIG. At this time, enough energy is supplied to the wire 0 to melt the entire protrusion length J. Also, even if energy is supplied in excess of the required amount, the cabinet 21)
Since melting stops at the lower end of O9, if the protrusion amount is controlled to be constant 1, a ball (1[IO] can always be obtained with a constant diameter.

次に従来例と同様に第1ボンデイング工程において、ペ
レットα4上の電極パッド部(1梯にキャピラリ0団の
先端を押圧してワイヤ(1漕に形成されたボールtte
を抑圧接合する。次の第2ボンデイング工程において、
キャピラリα旧まリードフレーム(11)のリード部0
1上に移動し、第1ボンデイングき同様にキャピラリα
暖をリード部四に圧接してワイヤ(13を押圧、接合す
る。次にワイヤ切断工程lこおいて従来におけると同様
にクランパ翰でワイヤーを把持して上昇し、ワイヤ(1
3)を引張って切断する。この際クランパ翰の上昇動作
とクランプ動作とのタイミングを制御することによりキ
ャピラリa9の下端からのワイヤα〜の突出長さJを所
定の長さに制御する。
Next, in the first bonding process as in the conventional example, the tip of the capillary group 0 is pressed onto the electrode pad portion (1 layer) on the pellet α4, and the wire (ball tte formed in 1 layer) is pressed.
Suppress and join. In the next second bonding step,
Lead part 0 of capillary α old lead frame (11)
1 and attach the capillary α in the same way as for the first bonding.
The wire (13) is pressed and bonded by pressing the wire (13) onto the lead part (4).Next, in the wire cutting process (1), the wire is held by the clamper handle and raised as in the conventional method, and the wire (13) is pressed and bonded.
3) Pull and cut. At this time, the protruding length J of the wire α~ from the lower end of the capillary a9 is controlled to a predetermined length by controlling the timing of the lifting operation and the clamping operation of the clamper rod.

なお1本実施例は金ワイヤにつき記載したがボール形成
時に不活性ガスを用いる銅ワイヤやアルミニラムワイヤ
でもよい。また接合時に熱や超音波を用いる場合でもよ
く、さらにまたボール形成方法として電気トーチ、水素
トーチいずれを用いる場合でもよい。
Although this embodiment has been described using gold wire, copper wire or aluminum wire may also be used in which an inert gas is used during ball formation. Further, heat or ultrasonic waves may be used during bonding, and either an electric torch or a hydrogen torch may be used as the ball forming method.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように1本発明のワイヤボンディング方法
は、ボール形成に際してキャピラリ下端から突出してい
る部分のワイヤ全体を溶融させてボールを形成するよう
にしたので、供給エネルギ量が過剰でも溶融はギヤピラ
リ下端で停止するから、突出長さを一定に保つことによ
り一定の大きさのボールが形成できる。さらにまた必要
量以上の溶融エネルギーを与えても支障はないので、突
出ワイヤが曲っていても十分溶融でき、銅ワイヤやアル
ミニウムワイヤなどのように不活性ガス中ボール形成す
る場合でも何ら悪影響を受けない。
As detailed above, in the wire bonding method of the present invention, the ball is formed by melting the entire portion of the wire protruding from the lower end of the capillary when forming the ball, so even if an excessive amount of energy is supplied, the wire bonding method of the present invention will not melt the gear. Since it stops at the bottom end, a ball of a constant size can be formed by keeping the protrusion length constant. Furthermore, there is no problem even if more melting energy is applied than necessary, so even if the protruding wire is bent, it can be sufficiently melted, and even when forming a ball in an inert gas, such as copper wire or aluminum wire, there will be no adverse effects. do not have.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例におけるボール形成工程説明
図、第2図は同じくボール成形状態説明図、第3図は同
じく第1ボンデイング工程および第2ボンデイング工程
の説明図、第懇図および第1図は従来例の説明図である
。 (13−・・ワ イ ヤ、      (Ii・・・キ
ャピラリ。 Oe・・・ボー ル、(1〜・・・被接合部(電極パッ
ド部)員・・・被接合部(リード部)。 代理人 弁理士  則 近 憲 佑 同     竹 花 喜久男
FIG. 1 is an explanatory diagram of the ball forming process in an embodiment of the present invention, FIG. 2 is an explanatory diagram of the ball forming state, and FIG. 3 is an explanatory diagram of the first bonding process and the second bonding process, and FIG. 1 is an explanatory diagram of a conventional example. (13-... Wire, (Ii... Capillary. Oe... Ball, (1~... Part to be joined (electrode pad part)) Member... Part to be joined (lead part). Substitute People Patent Attorneys Nori Chika Yudo Kikuo Takehana

Claims (3)

【特許請求の範囲】[Claims] (1)キャピラリの先端からワイヤを突出させこれを加
熱溶融してボールを形成しこれを被接合部に圧着するワ
イヤボンディング方法において、上記ワイヤの突出した
部分は所望のボール径に対応した量でありかつこの突出
した部分全体を溶融してボールを形成することを特徴と
するワイヤボンディング方法。
(1) In a wire bonding method in which a wire is protruded from the tip of a capillary, the wire is heated and melted to form a ball, and the ball is crimped onto the part to be bonded.The protruding portion of the wire is an amount corresponding to the desired ball diameter. A wire bonding method characterized by forming a ball by melting the entire protruding portion.
(2)ワイヤは銅ワイヤであることを特徴とする特許請
求の範囲第1項記載のワイヤボンディング方法。
(2) The wire bonding method according to claim 1, wherein the wire is a copper wire.
(3)ワイヤはアルミニウムワイヤであることを特徴と
する特許請求の範囲第1項記載のワイヤボンディング方
法。
(3) The wire bonding method according to claim 1, wherein the wire is an aluminum wire.
JP60266010A 1985-11-28 1985-11-28 Wire bonding method Pending JPS62126644A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60266010A JPS62126644A (en) 1985-11-28 1985-11-28 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60266010A JPS62126644A (en) 1985-11-28 1985-11-28 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS62126644A true JPS62126644A (en) 1987-06-08

Family

ID=17425118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60266010A Pending JPS62126644A (en) 1985-11-28 1985-11-28 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS62126644A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263843A (en) * 1990-03-14 1991-11-25 Matsushita Electric Ind Co Ltd Wire bonding

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263843A (en) * 1990-03-14 1991-11-25 Matsushita Electric Ind Co Ltd Wire bonding

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