JP2680232B2 - Wire bonding method with solder wire - Google Patents

Wire bonding method with solder wire

Info

Publication number
JP2680232B2
JP2680232B2 JP4284633A JP28463392A JP2680232B2 JP 2680232 B2 JP2680232 B2 JP 2680232B2 JP 4284633 A JP4284633 A JP 4284633A JP 28463392 A JP28463392 A JP 28463392A JP 2680232 B2 JP2680232 B2 JP 2680232B2
Authority
JP
Japan
Prior art keywords
wire
solder wire
solder
ball
wire bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4284633A
Other languages
Japanese (ja)
Other versions
JPH06140455A (en
Inventor
浩之 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP4284633A priority Critical patent/JP2680232B2/en
Publication of JPH06140455A publication Critical patent/JPH06140455A/en
Application granted granted Critical
Publication of JP2680232B2 publication Critical patent/JP2680232B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、各種の電子部品の製造
に際して、例えば、半導体チップとそのリード端子又は
回路パターンとの間を金属線を使用してワイヤーボンデ
ィングする場合において、前記金属線として半田ワイヤ
ーを使用したワイヤーボンディング方法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the production of various electronic parts, for example, when the semiconductor chip and its lead terminal or circuit pattern are wire-bonded using a metal wire, the metal wire is used as the metal wire. The present invention relates to a wire bonding method using a solder wire.

【０００２】[0002]

【従来の技術】従来、この種のワイヤーボンディングに
は、金線を使用するのが極く一般的であったが、金線は
非常に高価で、コストが大幅にアップすることになる。
そこで、前記金線に代えて半田ワイヤーを使用すること
が行われている。半田ワイヤーを使用することの特徴と
しては、コストを充分に低減できると共に、この半田ワ
イヤーを温度又は過電流に対する安全ヒューズ、並び
に、温度及び過電流に対する安全ヒューズとしての機能
を持たせること等が挙げられる。2. Description of the Related Art Heretofore, it has been very common to use a gold wire for this type of wire bonding, but the gold wire is very expensive and the cost is greatly increased.
Therefore, a solder wire is used instead of the gold wire. The characteristics of using the solder wire include that the cost can be sufficiently reduced, and that the solder wire has a function as a safety fuse against temperature or overcurrent, and a safety fuse against temperature and overcurrent. To be

【０００３】ところで、ワイヤーボンディングに際して
は、金線をキャピラリツールに挿通したのち、その先端
に、加熱・溶融によってボール部を形成し、このボール
部を、半導体チップ等のワークに対して押圧することに
よって接合するのであるが、前記金線に代えて半田ワイ
ヤーを使用する場合には、その先端に、加熱・溶融によ
ってボール部を形成するときに、ボール部の表面に、き
わめて厚い酸化膜が必然的に形成されることになるか
ら、半導体チップ等のワークに対して接合できない事態
が発生する。By the way, in wire bonding, after inserting a gold wire into a capillary tool, a ball portion is formed at its tip by heating and melting, and the ball portion is pressed against a work such as a semiconductor chip. However, when a solder wire is used instead of the gold wire, an extremely thick oxide film is inevitably formed on the surface of the ball when the ball is formed at the tip by heating and melting. Since it is formed in a desired manner, a situation in which it cannot be joined to a work such as a semiconductor chip occurs.

【０００４】そこで、本発明者は、先の特許出願（特願
平４−３８１４１号）において、キャピラリーツールに
挿通した半田ワイヤーの途中を、不活性ガスの雰囲気中
において、酸素ガスと水素ガスとの混合ガスから成る酸
水素火炎にて加熱・溶融することによって、切断すると
同時に、その切断の両端部にボール部を各々形成し、こ
の両ボール部を、半導体チップ等のワークに対して押圧
・接合すると言う半田ワイヤーによるボール・ボール式
のワイヤーボンディング方法を提案した。In view of the above, the present inventor, in the above-mentioned patent application (Japanese Patent Application No. 4-38141), provided oxygen gas and hydrogen gas in the middle of the solder wire inserted in the capillary tool in an inert gas atmosphere. At the same time as cutting by heating and melting with an oxyhydrogen flame consisting of a mixed gas, ball parts are formed at both ends of the cutting, and both ball parts are pressed against a work such as a semiconductor chip. We proposed a ball-ball type wire bonding method using solder wires called joining.

【０００５】[0005]

【発明が解決しようとする課題】しかし、この先願発明
による方法は、半田ワイヤーの途中を、不活性ガスの雰
囲気中において、酸水素火炎にて加熱・溶融すること
で、切断すると同時にその切断の両端部にボール部を形
成するものであるが、前記酸水素火炎による半田ワイヤ
ーの加熱・溶融に際しては、前記酸水素火炎における過
剰の酸素ガス、及び酸素ガスと水素ガスとの燃焼反応に
よって発生する水蒸気のために、ボール部の表面に酸化
膜が発生することになり、換言すると、不活性ガスの雰
囲気中においてボール部を形成するにもかかわらず、ボ
ール部の表面に酸化膜が発生するから、半導体チップ等
のワークに対する接合の確実性及び接合の強度が未だ不
十分であった。However, in the method according to the present invention, the solder wire is cut and cut at the same time by heating and melting it with an oxyhydrogen flame in the atmosphere of an inert gas. Ball portions are formed at both ends, but when the solder wire is heated and melted by the oxyhydrogen flame, it is generated by excess oxygen gas in the oxyhydrogen flame and a combustion reaction between oxygen gas and hydrogen gas. Due to the water vapor, an oxide film is generated on the surface of the ball portion. In other words, although the ball portion is formed in the atmosphere of the inert gas, the oxide film is generated on the surface of the ball portion. However, the certainty of joining and the strength of joining to a work such as a semiconductor chip are still insufficient.

【０００６】しかも、前記酸水素火炎の温度は、約３０
００℃と言うように、半田の溶融温度（約３００℃）よ
りも遙かに高いことにより、当該酸水素火炎の状態によ
って、ボール部の直径が大きく変化するから、ボール部
の直径を所定寸法にすること、及び、直径を同じに揃え
ることの制御がきわめて困難である点も問題であった。Moreover, the temperature of the oxyhydrogen flame is about 30.
Since the temperature of the ball is much higher than the melting temperature of the solder (about 300 ° C.), the diameter of the ball changes greatly depending on the state of the oxyhydrogen flame. Another problem is that it is extremely difficult to control the diameter and the diameter to be the same.

【０００７】本発明は、半田ワイヤーによるボール・ボ
ール式のワイヤーボンディングに際して、ワークに対す
る接合の確実性及び接合の強度を大幅にアップできるよ
うにすると共に、ボール部の直径を所定寸法にするこ
と、及び直径を揃えることが容易にできるようにした方
法を提供することを技術的課題とするものである。According to the present invention, in ball-ball type wire bonding with a solder wire, it is possible to significantly increase the reliability and strength of bonding to a work and to make the diameter of the ball portion a predetermined size. And it is a technical object to provide a method capable of easily making the diameters uniform.

【０００８】[0008]

【課題を解決するための手段】この技術的課題を達成す
るため本発明は、リードフレーム又は半導体チップ等の
ワークの付近及び半田ワイヤーを挿通したキャピラリー
ツールの付近を不活性ガスの雰囲気にし、前記キャピラ
リーツールから引き出した半田ワイヤーの途中を、電気
ヒータからの熱輻射にて溶断すると同時に、その溶断の
両端部にボール部を各々形成し、この両ボール部を、リ
ードフレーム又は半導体チップ等のワークに対して押圧
・接合することを特徴とする。In order to achieve this technical object, the present invention provides an inert gas atmosphere in the vicinity of a work such as a lead frame or a semiconductor chip and in the vicinity of a capillary tool in which a solder wire is inserted. At the same time that the solder wire pulled out from the capillary tool is melted by heat radiation from an electric heater, and at the same time, ball parts are formed at both ends of the melted melt. It is characterized by pressing and joining against.

【０００９】[0009]

【作 用】半田ワイヤーの途中を溶断してその両端部
にボール部を形成するに際して、前記のように、不活性
ガスの雰囲気中において、半田ワイヤーを、電気ヒータ
からの熱輻射にて溶断することにより、その溶断の両端
部の各々にボール部を、当該ボール部の表面に発生する
酸化膜を著しく少なくした状態にして形成することがで
きる。[Operation] When fusing the middle of the solder wire to form the ball portions at both ends thereof, as described above, the solder wire is fused by heat radiation from the electric heater in the atmosphere of the inert gas. As a result, the ball portions can be formed at both ends of the fusing with the oxide film generated on the surface of the ball portions being significantly reduced.

【００１０】[0010]

【発明の効果】このように、本発明によると、半田ワイ
ヤーによるボール・ボール式のワイヤーボンディングに
際して、半田ワイヤーに形成するボール部の表面に発生
する酸化膜を少なくすることができるから、リードフレ
ーム又は半導体チップ等のワークに対する接合の確実性
と、接合の強度とを大幅にアップすることができて、半
田ワイヤーによるワイヤーボンディングに際してのワイ
ヤーボンディングミスの発生を確実に低減できる効果を
有する。As described above, according to the present invention, in the ball-ball type wire bonding with the solder wire, the oxide film generated on the surface of the ball portion formed on the solder wire can be reduced, so that the lead frame can be reduced. Alternatively, there is an effect that the reliability of bonding to a work such as a semiconductor chip and the strength of bonding can be significantly increased, and the occurrence of wire bonding mistakes at the time of wire bonding with a solder wire can be surely reduced.

【００１１】しかも、半田ワイヤーの溶断を、電気ヒー
タからの熱輻射にて行うことにより、温度の制御が容易
にできるから、ボール部における直径寸法のバラツキを
小さくできると共に、ボール部における直径寸法を任意
する設定することができるのである。Moreover, since the temperature of the solder wire can be easily controlled by radiating the heat from the electric heater, the variation in the diameter of the ball portion can be reduced and the diameter of the ball portion can be reduced. It can be set arbitrarily.

【００１２】[0012]

【実施例】以下、本発明の実施例を、温度又は過電流に
対する安全ヒューズを備えたタンタル電解コンデンサー
において、前記安全ヒューズを、半田ワイヤーによるワ
イヤーボンディングにて設けることに適用した場合につ
いて説明する。前記タンタル電解コンデンサー１は、図
８に示すように、コンデンサー素子２から突出する陽極
端子３を、左右一対のリード端子４，５のうち一方のリ
ード端子４に対して固着する一方、前記コンデンサー素
子２と他方のリード端子５との間を、半田ワイヤー製の
安全ヒューズ６にてワイヤーボンディングし、これらの
全体を熱硬化性合成樹脂製のモールド部７にてパッケー
ジしたのち、前記両リード端子４，５を、モールド部７
に沿ってその裏面側に折り曲げたものである。Embodiments of the present invention will be described below in which a tantalum electrolytic capacitor having a safety fuse against temperature or overcurrent is applied to the safety fuse by wire bonding with a solder wire. In the tantalum electrolytic capacitor 1, as shown in FIG. 8, an anode terminal 3 protruding from a capacitor element 2 is fixed to one lead terminal 4 of a pair of left and right lead terminals 4 and 5, while the capacitor element is 2 and the other lead terminal 5 are wire-bonded by a safety fuse 6 made of a solder wire, and the whole of them is packaged by a mold part 7 made of a thermosetting synthetic resin. , 5 to the mold part 7
It is the one that is bent to the back side along.

【００１３】図１〜図７において符号１０は、前記タン
タル電解コンデンサー１における一対のリード端子４，
５を、長手方向に沿って適宜ピッチの間隔で一体的に造
形したリードフレームを示し、このリードフレーム１０
における各一方のリード端子４には、前記コンデンサー
素子２を備えた陽極端子３が固着されており、且つ、こ
のリードフレーム１０は、矢印Ａで示すように、その長
手方向に前記各リード端子４，５のピッチ間隔で間欠的
に移送されている。1 to 7, reference numeral 10 indicates a pair of lead terminals 4 in the tantalum electrolytic capacitor 1.
5 shows a lead frame in which 5 is integrally formed at appropriate intervals along the longitudinal direction.
The anode terminal 3 provided with the capacitor element 2 is fixed to each one of the lead terminals 4 in the above, and the lead frame 10 has the lead terminals 4 in the longitudinal direction thereof as shown by an arrow A. , 5 are intermittently transferred at a pitch interval.

【００１４】符号１１は、機台（図示せず）に対して、
前記リードフレーム１０の長手方向に沿って延びるよう
に配設したヒータブロックを示し、このヒータブロック
１１の内部には、前記リードフレーム１０を適宜温度に
加熱するためのヒータ（図示せず）が設けられ、また、
前記ヒーダフロック１１の上面には、略中心にワイヤー
ボンディング用の開口孔１３を有するカバー板１２が取
付けられている。Reference numeral 11 indicates a machine base (not shown).
1 shows a heater block arranged so as to extend along the longitudinal direction of the lead frame 10, and a heater (not shown) for heating the lead frame 10 to an appropriate temperature is provided inside the heater block 11. And again
A cover plate 12 having an opening 13 for wire bonding substantially in the center is attached to the upper surface of the Heeda flock 11.

【００１５】前記ヒータブロック１１の上面とカバー板
１２との間に、前記リードフレーム１０が通過するトン
ネル部１４を形成する一方、前記カバー板１２には、ト
ンネル部１４内への不活性ガス供給管路１５を接続し
て、この不活性ガス供給管路１５からトンネル部１４内
に窒素ガス又はアルゴンガス等の不活性ガスを供給した
のち、前記開口孔１３から不活性ガスを吹き出すことに
より、この開口孔１３を囲うボックス１６内において、
前記リードフレーム１０における一方のリード端子４に
固着したコンデンサー素子３と、他方のリード端子５と
の間を、安全ヒューズ６を構成する半田ワイヤーにて、
ワイヤーボンディングを行うように構成する。A tunnel portion 14 through which the lead frame 10 passes is formed between the upper surface of the heater block 11 and the cover plate 12, while the cover plate 12 is supplied with an inert gas into the tunnel portion 14. By connecting a pipe 15 and supplying an inert gas such as nitrogen gas or argon gas into the tunnel portion 14 from the inert gas supply pipe 15, the inert gas is blown out from the opening hole 13, In the box 16 that surrounds this opening 13,
Between the capacitor element 3 fixed to one lead terminal 4 of the lead frame 10 and the other lead terminal 5 with a solder wire forming a safety fuse 6,
It is configured to perform wire bonding.

【００１６】そして、この半田ワイヤーによるワイヤー
ボンディングは、図４〜図７に示すようにして行うので
ある。すなわち、リードフレーム１０における他方のリ
ード端子５の真上の部位に、上下動式のキャピラリーツ
ール１７を配設し、このキャピラリーツール１７内に挿
通した半田ワイヤー１８の下端に、図４に示すように、
ボール部１８ａを形成すると、前記キャピラリーツール
１７が、図５に示すように、他方のリード端子５に向か
って下降動することにより前記ボール部１８ａを他方の
リード端子５に対して押圧・接合したのち上昇動する。The wire bonding with the solder wire is performed as shown in FIGS. That is, the vertically movable capillary tool 17 is arranged at a position directly above the other lead terminal 5 in the lead frame 10, and the solder wire 18 inserted into the capillary tool 17 is attached to the lower end thereof as shown in FIG. To
When the ball portion 18a is formed, the capillary tool 17 descends toward the other lead terminal 5 to press and join the ball portion 18a to the other lead terminal 5, as shown in FIG. Then move up.

【００１７】次いで、前記半田ワイヤー１８のうちキャ
ピラリーツール１７より突出する部分に対して、カンタ
ル線又は白金線製の電気ヒータ１９を接近することによ
り、図６及び図７に示すように、半田ワイヤー１８を、
前記電気ヒータ１９からの熱輻射にて加熱して、当該半
田ワイヤー１８と他方のリード端子５に対して接合され
ている半田ワイヤー片１８′とに溶断するのであり、こ
の溶断により、前記半田ワイヤー１８の下端にボール部
１８ａを、前記半田ワイヤー１８′の先端にボール部１
８ｂを各々形成することができる。Next, an electric heater 19 made of a Kanthal wire or a platinum wire is brought close to a portion of the solder wire 18 protruding from the capillary tool 17, so that the solder wire is made as shown in FIGS. 18
The solder wire 18 and the solder wire piece 18 ′ joined to the other lead terminal 5 are heated by the heat radiation from the electric heater 19 and melted. A ball portion 18a is provided at the lower end of the ball 18, and a ball portion 1 is provided at the tip of the solder wire 18 '.
8b can each be formed.

【００１８】そこで、他方のリード端子５に対して接合
した半田ワイヤー片１８′を、略水平方向に往復動する
折り曲げ用ツール２０の前進動によって、当該半田ワイ
ヤー片１８′の先端におけるボール部１８ｂがコンデン
サー素子３に対して接当するように折り曲げたのち、こ
の半田ワイヤー片１８′の先端におけるボール部１８ｂ
を、上下動式押圧ツール２１の下降動にて、コンデンサ
ー素子３に対して押圧して接合することによって、ワイ
ヤーボンディングを完了するのである。Then, the solder wire piece 18 'joined to the other lead terminal 5 is moved forward by the bending tool 20 which reciprocates in a substantially horizontal direction, and the ball portion 18b at the tip of the solder wire piece 18' is moved forward. Is bent so that it contacts the capacitor element 3, and then the ball portion 18b at the tip of this solder wire piece 18 'is formed.
The wire bonding is completed by pressing and joining the capacitor element 3 with the downward movement of the vertical movement type pressing tool 21.

【００１９】このワイヤーボンディングに際して、前記
キャビラリーツール１７の付近、及びこれに挿通した半
田ワイヤー１８の付近は、開口孔１３から吹き出す不活
性ガスにて不活性ガスの雰囲気にされている一方、半田
ワイヤー１８の溶断を、電気ヒータ１９からの熱輻射に
よる加熱にて行うことにより、その溶断の両端に形成さ
れるボール部１８ａ，１８ｂの表面に酸化膜が発生する
ことを、確実に低減できるから、この両ボール部１８
ａ，１８ｂの他方のリード端子５及びコンデンサー素子
３に対する接合の確実性、及び接合強度を大幅にアップ
することができるのである。In this wire bonding, the vicinity of the cavity tool 17 and the solder wire 18 inserted therethrough are kept in an inert gas atmosphere by the inert gas blown out from the opening 13, while the solder is soldered. By performing the fusing of the wire 18 by heating with the heat radiation from the electric heater 19, it is possible to reliably reduce the generation of an oxide film on the surfaces of the ball portions 18a and 18b formed at both ends of the fusing. , Both ball parts 18
The reliability and the joint strength of the joint between the other lead terminal 5 of a and 18b and the capacitor element 3 can be significantly increased.

【００２０】なお、前記のようにしてワイヤーボンディ
ングを完了した各タンタル電解コンデンサーは、その要
部を、合成樹脂製のモールド部７にてパッケージしたの
ち、リードフレーム１０より切り離され、次いで、両リ
ード端子４，５をモールド部７に沿って折り曲げられて
完成品にされる。また、前記実施例は、タンタル電解コ
ンデンサー１において、その安全ヒューズ６を、半田ワ
イヤーによるワイヤーボンディングにて設けることに適
用した場合を示したが、本発明は、これに限らず、他の
電子部品において、半田ワイヤーにてワイヤーボンディ
ングする場合にも適用できることは言うまでもない。Each tantalum electrolytic capacitor, which has been wire-bonded as described above, is packaged at its main part in a mold part 7 made of synthetic resin, then separated from the lead frame 10, and then the two leads are separated. The terminals 4 and 5 are bent along the mold part 7 to complete the product. Further, although the above-mentioned embodiment shows the case where the safety fuse 6 is applied to the tantalum electrolytic capacitor 1 by wire bonding with a solder wire, the present invention is not limited to this, and other electronic parts are also provided. It goes without saying that the present invention can also be applied to wire bonding with a solder wire.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明における実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.

【図２】図１のII−II視断面図である。FIG. 2 is a sectional view taken along line II-II of FIG.

【図３】図１のIII −III 視拡大断面図である。FIG. 3 is an enlarged sectional view taken along line III-III of FIG. 1;

【図４】本発明の実施例によるワイヤーボンディングの
第１の状態を示す斜視図である。FIG. 4 is a perspective view showing a first state of wire bonding according to an embodiment of the present invention.

【図５】本発明の実施例によるワイヤーボンディングの
第２の状態を示す斜視図である。FIG. 5 is a perspective view showing a second state of wire bonding according to the embodiment of the present invention.

【図６】本発明の実施例によるワイヤーボンディングの
第３の状態を示す斜視図である。FIG. 6 is a perspective view showing a third state of wire bonding according to the embodiment of the present invention.

【図７】図６のVII −VII 視断面図である。FIG. 7 is a sectional view taken along the line VII-VII in FIG. 6;

【図８】タンタル電解コンデンサーの縦断正面図であ
る。FIG. 8 is a vertical sectional front view of a tantalum electrolytic capacitor.

【符号の説明】[Explanation of symbols]

１ タンタル電解コンデンサー ２ コンデンサー素子 ３ 陽極端子 ４，５ リード端子 ６ 安全ヒューズ ７ モールド部 １０ リードフレーム １１ ヒータブロック １２ カバー板 １３ 不活性ガス噴出用の開口孔 １４ トンネル部 １５ 不活性ガス供給管路 １６ ボックス １７ キャピラリーツール １８ 半田ワイヤー １８′ 半田ワイヤー片 １８ａ，１８ｂ ボール部 １９ 電気ヒータ 1 Tantalum Electrolytic Capacitor 2 Capacitor Element 3 Anode Terminal 4, 5 Lead Terminal 6 Safety Fuse 7 Mold Section 10 Lead Frame 11 Heater Block 12 Cover Plate 13 Opening Hole for Injecting Inert Gas 14 Tunnel Section 15 Inert Gas Supply Pipeline 16 Box 17 Capillary tool 18 Solder wire 18 'Solder wire piece 18a, 18b Ball portion 19 Electric heater

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】リードフレーム又は半導体チップ等のワー
クの付近及び半田ワイヤーを挿通したキャピラリーツー
ルの付近を不活性ガスの雰囲気にし、前記キャピラリー
ツールから引き出した半田ワイヤーの途中を、電気ヒー
タからの熱輻射にて溶断すると同時に、その溶断の両端
部にボール部を各々形成し、この両ボール部を、リード
フレーム又は半導体チップ等のワークに対して押圧・接
合することを特徴とする半田ワイヤによるワイヤーボン
ディング方法。1. An inert gas atmosphere is provided in the vicinity of a work such as a lead frame or a semiconductor chip and in the vicinity of a capillary tool into which a solder wire is inserted, and the middle of the solder wire pulled out from the capillary tool is heated by an electric heater. A wire made of solder wire, characterized in that, at the same time as it is melted by radiation, ball parts are formed at both ends of the melted material, and these ball parts are pressed and bonded to a work such as a lead frame or a semiconductor chip. Bonding method.
JP4284633A 1992-10-22 1992-10-22 Wire bonding method with solder wire Expired - Fee Related JP2680232B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4284633A JP2680232B2 (en) 1992-10-22 1992-10-22 Wire bonding method with solder wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4284633A JP2680232B2 (en) 1992-10-22 1992-10-22 Wire bonding method with solder wire

Publications (2)

Publication Number Publication Date
JPH06140455A JPH06140455A (en) 1994-05-20
JP2680232B2 true JP2680232B2 (en) 1997-11-19

Family

ID=17681004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4284633A Expired - Fee Related JP2680232B2 (en) 1992-10-22 1992-10-22 Wire bonding method with solder wire

Country Status (1)

Country Link
JP (1) JP2680232B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4938346B2 (en) 2006-04-26 2012-05-23 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPH06140455A (en) 1994-05-20

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