JP2975207B2 - Wire bonding equipment with solder wire - Google Patents
Wire bonding equipment with solder wireInfo
- Publication number
- JP2975207B2 JP2975207B2 JP4038141A JP3814192A JP2975207B2 JP 2975207 B2 JP2975207 B2 JP 2975207B2 JP 4038141 A JP4038141 A JP 4038141A JP 3814192 A JP3814192 A JP 3814192A JP 2975207 B2 JP2975207 B2 JP 2975207B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- solder
- lead frame
- solder wire
- heater block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78268—Discharge electrode
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- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2224/78703—Mechanical holding means
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子部品の製造に際し
て、例えば、リードフレーム又は基板等のワークにおけ
る半導体チップ等とリード端子等の間を、金属線を使用
してワイヤーボンディングする場合に、前記金属線とし
て半田ワイヤーを使用したワイヤーボンディング装置に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the production of electronic parts, for example, when wire bonding is performed between a semiconductor chip or the like and a lead terminal or the like in a work such as a lead frame or a substrate using a metal wire. The present invention relates to a wire bonding apparatus using a solder wire as the metal wire.
【０００２】[0002]
【従来の技術】この種のワイヤーボンディングには、金
線を使用するのが極く一般的であったが、金線が非常に
高価で、コストが大幅に嵩むことになるし、また、金線
ではこれを温度ヒューズにすることができないから、こ
れらのために、最近では、前記金線に代えて半田ワイヤ
ーを使用することが行われている。2. Description of the Related Art For this type of wire bonding, it is very common to use a gold wire. However, the gold wire is very expensive and the cost is greatly increased. For these reasons, the use of solder wires instead of the gold wires has recently been practiced because wires cannot make them thermal fuses.
【０００３】ところで、ワイヤーボンディングに金線を
使用する場合には、キャピラリツールに挿通した金線の
先端を加熱・溶融することで、当該先端にボール部を簡
単に形成することができるから、このボール部を半導体
チップ等に対して押圧することによって接合すると言う
ボール式のワイヤーボンディング方式を適用することが
できる。しかし、半田ワイヤーを使用した場合、その先
端を加熱するとその表面が直ちに酸化することにより、
当該半田ワイヤーの先端にボール部を形成することがで
きない。When a gold wire is used for wire bonding, a ball portion can be easily formed at the tip by heating and melting the tip of the gold wire inserted into the capillary tool. A ball type wire bonding method in which a ball portion is joined by pressing the ball portion against a semiconductor chip or the like can be applied. However, when a solder wire is used, when its tip is heated, its surface immediately oxidizes,
A ball cannot be formed at the tip of the solder wire.
【０００４】そこで、従来、半田ワイヤーを使用しての
ワイヤーボンディングに際しては、前記半田ワイヤーの
先端を、半導体チップ等に対して、前記半田ワイヤーよ
りも高い融点の高温半田を使用して半田接合するか、或
いは、キャピラリツールの挿通した半田ワイヤーの先端
を、前記キャピラリツールの下端面から突出し、この突
出端を、前記キャピラリツールによって半導体チップ等
に対して押圧することで、直接的に接合するようにして
いる。Therefore, conventionally, in wire bonding using a solder wire, the tip of the solder wire is solder-bonded to a semiconductor chip or the like using a high-temperature solder having a melting point higher than that of the solder wire. Alternatively, the tip of the solder wire inserted through the capillary tool is projected from the lower end face of the capillary tool, and the projected end is pressed against a semiconductor chip or the like by the capillary tool, thereby directly joining. I have to.
【０００５】[0005]
【発明が解決しようとする課題】しかし、前者のよう
に、半田ワイヤーの先端部を高温半田にて半田接合する
方法は、半田ワイヤーとは別に、高温半田を必要とする
ので、材料費が嵩むばかりか、ワイヤーボンディングの
速度が遅くて、ワイヤーボンディングのコストが可成り
アップすると言う問題がある。However, the method of soldering the tip of the solder wire with high-temperature solder, as in the former method, requires high-temperature solder separately from the solder wire, which increases the material cost. In addition, there is a problem that the speed of wire bonding is slow and the cost of wire bonding is considerably increased.
【０００６】また、後者のように、半田ワイヤーにおけ
るキャピラリツールからの突出端を押圧することによっ
て直接的に接合する方法は、接合面積が、当該突出端に
金線のようにボール部を形成し、このボール部を押圧す
る場合よりも小さくて、接合強度が低いから、接合ミス
が多発すると言う問題がある。Also, as in the latter case, the method of directly joining by pressing the protruding end of the solder wire from the capillary tool has a joint area where a ball portion is formed like a gold wire on the protruding end. However, since it is smaller than the case where the ball portion is pressed and the joining strength is low, there is a problem that joining errors frequently occur.
【０００７】本発明は、半田ワイヤーによるワイヤーボ
ンディングが、前記金線の場合と同様に、ボール式のワ
イヤーボンディング方式にて、前記のような問題を招来
することなく、確実に行うことができるようにしたワイ
ヤーボンディング装置を提供することを技術的課題をと
するものである。According to the present invention, the wire bonding using a solder wire can be reliably performed by the ball-type wire bonding method without causing the above-described problem, similarly to the case of the gold wire. It is an object of the present invention to provide a wire bonding apparatus having the above configuration.
【０００８】[0008]
【課題を解決するための手段】この技術的課題を達成す
るため本発明は、「リードフレーム等のワークを移送す
る経路中に、前記リードフレーム等のワークを加熱する
ためのヒータを備えたヒータブロック体を配設して、該
ヒータブロック体の上面と、当該上面に設けたカバー体
との間に、前記リードフレーム等のワークが通過するよ
うにしたトンネル部を設ける一方、前記カバー体に、前
記トンネル部内に連通する開口孔を穿設して、この開口
孔の上方に、半田ワイヤーを挿通したキャピラリツール
と、前記半田ワイヤーの前記キャピラリツールからの突
出端との間に火花放電を発生するスパーク式トーチ体と
を配設し、更に、前記ヒータブロック体とカバー体との
間のトンネル部に、当該トンネル部内に窒素ガス等の酸
化抑制ガスを供給するようにしたガス供給通路を開口す
る。」という構成にした。SUMMARY OF THE INVENTION In order to achieve this technical object, the present invention provides a heater comprising a heater for heating a work such as a lead frame in a path for transferring the work such as a lead frame. A block body is provided, and a tunnel portion through which a work such as the lead frame passes is provided between an upper surface of the heater block body and a cover body provided on the upper surface, while the cover body is provided on the cover body. An opening communicating with the inside of the tunnel portion is formed, and a spark discharge is generated between the capillary tool through which the solder wire is inserted and the protruding end of the solder wire from the capillary tool above the opening. disposed between spark-type torch body, further supply, to the tunnel section between the heater block body and the cover body, the oxidation-inhibiting gas such as nitrogen gas into the tunnel portion And the configuration of opening of the gas supply passage to so that.. "
【０００９】[0009]
【作 用】このように構成すると、リードフレーム等
のワークは、ヒータブロック体とカバー体の間のトンネ
ル部内を移送する途中において、前記ヒータブロック体
におけるヒータにて適宜温度に加熱される。[Work] With this configuration, a work such as a lead frame is heated to an appropriate temperature by the heater in the heater block while being transported in the tunnel between the heater block and the cover.
【００１０】一方、トンネル部内に供給した窒素ガス等
の酸化抑制ガスは、カバー体に穿設した開口孔より上向
きに噴出することにより、この開口孔の上方に配設した
キャピラリツールの周辺は、酸化抑制ガスの雰囲気にな
るから、このキャピラリツールの下端面から突出する半
田ワイヤーの先端を、スパーク式トーチ体との間に発生
する火花放電にて、加熱・溶融することにより、溶融半
田は、その表面に酸化皮膜が形成されることなく、表張
力によって球形になるから、前記半田ワイヤーの先端
に、半田のボール部を確実に安定して形成することがで
きる。On the other hand, the oxidation suppressing gas such as nitrogen gas supplied into the tunnel portion is jetted upward from an opening formed in the cover body, so that the periphery of the capillary tool disposed above the opening is reduced. Since the atmosphere becomes an oxidation-suppressing gas atmosphere, the tip of the solder wire protruding from the lower end surface of this capillary tool is generated between it and the spark-type torch.
Since the molten solder is heated and melted by spark discharge , the molten solder becomes spherical by surface tension without forming an oxide film on its surface, so that the solder ball portion is securely attached to the tip of the solder wire. Can be formed stably .
【００１１】そこで、前記キャピラリツールをワークに
向かって下降動して、前記のボール部を、ワークにおけ
る半導体チップ等に対して押圧することにより、前記半
田ワイヤーを半導体チップ等に対して、確実に接合する
ことができるのである。Therefore, by moving the capillary tool downward toward the workpiece and pressing the ball portion against the semiconductor chip or the like in the workpiece, the solder wire can be reliably moved to the semiconductor chip or the like. They can be joined.
【００１２】[0012]
【発明の効果】従って，本発明によると、半田ワイヤー
を使用してのワイヤーボンディングを、前記金線を使用
してのワイヤーボンディングの場合と同様にボール式に
て行うことができるから、半田ワイヤーを使用してのワ
イヤーボンディングに際して、別の高温半田を使用する
ことによるコストのアップを招来することがないと共
に、接合ミスが発生することを大幅に低減できるのであ
る。As described above, according to the present invention, wire bonding using a solder wire can be performed in a ball system in the same manner as wire bonding using the gold wire. In the case of wire bonding using, the use of another high-temperature solder does not lead to an increase in cost, and the occurrence of bonding errors can be greatly reduced.
【００１３】しかも、前記窒素ガス等の酸化抑制ガス
を、ワークが通過するトンネル部内に供給することによ
り、ワークの加熱に際して、ワークの表面が酸化するこ
とを防止できるから、半田ワイヤーの接合強度及び接合
の確実性の更なるアップを図ることができるのであり、
また、前記トンネル部内に供給した窒素ガス等の酸化抑
制ガスを、開口孔から噴出することによって、キャピラ
リツールの周辺を、酸化抑制ガスの雰囲気にするもの
で、換言すると、酸化抑制ガスを、ワークの酸化防止
と、半田ボール部の形成との両方に使用するものである
から、前記酸化抑制ガスを、ワークの酸化防止と、半田
ボール部の形成との両方に別々に供給する場合よりも酸
化抑制ガスの使用量を節減することができると共に、装
置の構造の簡単化、及び小型化を図ることができる効果
を有する。Moreover, by supplying the oxidation suppressing gas such as the nitrogen gas into the tunnel through which the work passes, it is possible to prevent the surface of the work from being oxidized when the work is heated. It is possible to further improve the reliability of joining,
In addition, the periphery of the capillary tool is made to have an atmosphere of an oxidation-suppressing gas by jetting an oxidation-suppressing gas such as nitrogen gas supplied into the tunnel portion from the opening hole. Is used for both prevention of oxidation and formation of the solder ball portion. Therefore, the oxidation suppressing gas is more oxidized than in the case of separately supplying both the oxidation prevention of the work and the formation of the solder ball portion. This has the effect of reducing the amount of use of the suppression gas and simplifying the structure of the device and reducing its size.
【００１４】[0014]
【実施例】以下、本発明の一つの実施例を、リードフレ
ームに対して半田ワイヤーによるワイヤーボンディング
を行う場合の図面について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings in the case of performing wire bonding to a lead frame by using a solder wire.
【００１５】図において符号Ａは、リードフレームを示
し、該リードフレームＡには、一対のリード端子Ａ1 ，
Ａ2 が、その長手方向に沿って適宜ピッチの間隔で一体
的に造形され、且つ、両リード端子Ａ1 ，Ａ2 のうち一
方のリード端子Ａ1 には、半導体チップＡ3 がダイボン
ディングされており、更に、前記リードフレームＡは、
矢印Ｂで示すように、その長手方向に前記各リード端子
Ａ１，Ａ２のピッチ間隔で間欠的に移送されている。In the drawing, reference symbol A denotes a lead frame, and the lead frame A has a pair of lead terminals A 1 ,
A 2 is, the integrally shaped in the longitudinal direction appropriate pitch spacing along, and, in the lead terminal A 1 one of two lead terminals A 1, A 2, the semiconductor chip A 3 is die-bonded Further, the lead frame A is
As shown by the arrow B, the lead terminals A1 and A2 are intermittently transferred in the longitudinal direction at a pitch interval between the lead terminals A1 and A2.
【００１６】符号１は、機台２の上面に、前記リードフ
レームＡの長手方向に沿って延びるように配設したヒー
タブロック体を示し、このヒータブロック体１の内部に
は、前記リードフレームＡを適宜加熱するようにしたヒ
ータ（図示せず）が設けられ、また、前記ヒータブロッ
ク１の上面には、カバー体３が取付けられている。Reference numeral 1 denotes a heater block disposed on the upper surface of the machine base 2 so as to extend along the longitudinal direction of the lead frame A. Inside the heater block 1, the lead frame A is provided. A heater (not shown) for heating the heater block 1 is provided, and a cover 3 is attached to the upper surface of the heater block 1.
【００１７】そして、前記ヒータブロック体１の上面と
カバー体３の下面との間に、前記リードフレームＡが通
過するようにしたトンネル部４を形成する一方、前記ヒ
ータブロック体１には、前記トンネル部４内に開口する
ガス供給通路５を穿設することにより、前記トンネル部
４内に、例えば、窒素ガス９５％、水素ガス５％等の還
元性を有するガス等の酸化抑制ガスを適宜量ずつ連続し
て供給するように構成する。A tunnel 4 is formed between the upper surface of the heater block 1 and the lower surface of the cover 3 so that the lead frame A can pass therethrough. By providing a gas supply passage 5 that opens into the tunnel portion 4, an oxidation-suppressing gas such as a reducing gas such as 95% nitrogen gas and 5% hydrogen gas is appropriately supplied into the tunnel portion 4. It is configured to supply continuously by quantity.
【００１８】一方、前記カバー体３には、前記トンネル
部４内に連通する開口孔６を穿設し、この開口孔６の上
方の部位に、半田ワイヤー７を挿通したキャピラリツー
ル８を配設すると共に、このキャピラリツール８とカバ
ー体３との間に、前記半田ワイヤー７の前記キャピラリ
ツール８からの突出端との間に火花放電を発生するよう
にしたスパーク式のトーチ体９を配設する。On the other hand, an opening 6 communicating with the inside of the tunnel portion 4 is formed in the cover 3, and a capillary tool 8 having a solder wire 7 inserted therein is disposed above the opening 6. At the same time, between the capillary tool 8 and the cover 3, the capillary of the solder wire 7
A spark discharge is generated between the tool and the protruding end from the tool 8.
The spark type torch body 9 is disposed.
【００１９】この構成において、リードフレームＡは、
ヒータブロック体１とカバー体３の間のトンネル部４内
を移送する途中において、前記ヒータブロック体１にお
けるヒータにて適宜温度に加熱される。In this configuration, the lead frame A
During the transfer in the tunnel portion 4 between the heater block 1 and the cover 3, the heater in the heater block 1 is heated to an appropriate temperature.
【００２０】一方、前記トンネル部４内にガス供給通路
５より供給した窒素ガス等の酸化抑制ガスは、カバー体
３に穿設した開口孔６より上向きに噴出することによ
り、この開口孔６の上方に配設したキャピラリツール８
の周辺は、酸化抑制ガスの雰囲気になるから、このキャ
ピラリツールの下端面から突出する半田ワイヤー７の先
端を、当該先端とスパーク式のトーチ体９との間に火花
放電することによって、加熱・溶融することにより、溶
融半田は、その表面に酸化皮膜が形成されることなく、
表面張力によって球形になるから、前記半田ワイヤー７
の先端に、図３に示すように、半田のボール部７ａを形
成することができる。On the other hand, an oxidation-suppressing gas such as nitrogen gas supplied from the gas supply passage 5 into the tunnel section 4 is jetted upward from the opening 6 formed in the cover 3 so that the opening 6 is closed. Capillary tool 8 arranged above
Of the solder wire 7 protruding from the lower end face of the capillary tool is spark-discharged between the tip and the spark type torch body 9 so that heating and heating are performed. By melting, the molten solder does not form an oxide film on its surface,
The solder wire 7 is spherical because of the surface tension.
As shown in FIG. 3, a solder ball portion 7a can be formed at the tip of the.
【００２１】そこで、前記スパークトーチ体９をキャピ
ラリツール８の下部の位置から後退したのち、キャピラ
リツール８を、リードフレームＡに向かって下降動し
て、前記のボール部７ａを、図４に示すように、リード
フレームＡにおける半導体チップＡ3 に対して押圧する
ことにより、前記半田ワイヤー７を半導体チップＡ3 に
対して、確実に接合することができる。Then, after retreating the spark torch body 9 from the position below the capillary tool 8, the capillary tool 8 is lowered toward the lead frame A, and the ball portion 7a is shown in FIG. as described above, by pressing the semiconductor chip a 3 of the lead frame a, the solder wire 7 to the semiconductor chip a 3, it can be reliably joined.
【００２２】次いで、前記キャピラリツール８を一旦上
昇したのち、他方のリード端子Ａ2の上方まで移動した
のち、図５に示すように、前記他方のリード端子Ａ2 に
向かって下降動することにより、前記半田ワイヤー７
を、他方のリード端子Ａ2 に接合する。[0022] Then, after rising once the capillary tool 8, after moving to above the other lead terminal A 2, as shown in FIG. 5, by lowering moving toward the other lead terminal A 2 , The solder wire 7
And it is bonded to the other lead terminal A 2.
【００２３】そして、前記キャピラリツール８を、図６
に示すように、半田ワイヤー７を切断しながら上昇動し
たのち、元の位置まで戻すことにより、前記一方のリー
ド端子Ａ1 における半導体チップＡ３と他方のリード端
子Ａ2 との間を、半田ワイヤー７にてワイヤーボンディ
ングするのである。Then, the capillary tool 8 is moved to the position shown in FIG.
As shown in, after rising movement while cutting the solder wire 7, by returning to the original position, between the semiconductor chip A3 and the other lead terminal A 2 of the lead terminals A 1 of the one solder wire At 7, wire bonding is performed.
【図１】本発明における実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図２】図１のII−II視拡大断面図である。FIG. 2 is an enlarged sectional view taken along line II-II of FIG.
【図３】図１のIII −III 視拡大断面図である。FIG. 3 is an enlarged sectional view taken along line III-III of FIG. 1;
【図４】第１の作用状態を示す図である。FIG. 4 is a diagram showing a first operation state.
【図５】第２の作用状態を示す図である。FIG. 5 is a diagram showing a second operation state.
【図６】第３の作用状態を示す図である。FIG. 6 is a diagram showing a third operation state.
Ａ リードフレーム Ａ1 ，Ａ2 リード端子 Ａ3 半導体チップ １ ヒータブロック体 ２ 機台 ３ カバー体 ４ トンネル部 ５ ガス供給通路 ６ 開口孔 ７ 半田ワイヤー ８ キャピラリツール ９ スパークトーチ体９A Lead frame A 1 , A 2 Lead terminal A 3 Semiconductor chip 1 Heater block 2 Machine stand 3 Cover 4 Tunnel 5 Gas supply passage 6 Opening hole 7 Solder wire 8 Capillary tool 9 Spark torch body 9
Claims (1)
中に、前記リードフレーム等のワークを加熱するための
ヒータを備えたヒータブロック体を配設して、該ヒータ
ブロック体の上面と、当該上面に設けたカバー体との間
に、前記リードフレーム等のワークが通過するようにし
たトンネル部を設ける一方、前記カバー体に、前記トン
ネル部内に連通する開口孔を穿設して、この開口孔の上
方に、半田ワイヤーを挿通したキャピラリツールと、前
記半田ワイヤーの前記キャピラリツールからの突出端と
の間に火花放電を発生するスパーク式トーチ体とを配設
し、更に、前記ヒータブロック体とカバー体との間のト
ンネル部に、当該トンネル部内に窒素ガス等の酸化抑制
ガスを供給するようにしたガス供給通路を開口すること
を特徴とする半田ワイヤーによるワイヤーボンディング
装置。1. A heater block provided with a heater for heating a work such as a lead frame is provided in a path for transferring a work such as a lead frame, and an upper surface of the heater block is provided. A tunnel portion through which a work such as the lead frame passes is provided between a cover body provided on an upper surface, and an opening hole communicating with the inside of the tunnel portion is formed in the cover body. above the hole, the capillary tool inserted through the solder wire, the projecting end from the capillary tool of the solder wire
A spark type torch body that generates a spark discharge between the heater block body and the cover body, and further supplies an oxidation-suppressing gas such as nitrogen gas into the tunnel section between the heater block body and the cover body. A wire bonding apparatus using a solder wire, characterized in that a gas supply passage is opened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4038141A JP2975207B2 (en) | 1992-02-25 | 1992-02-25 | Wire bonding equipment with solder wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4038141A JP2975207B2 (en) | 1992-02-25 | 1992-02-25 | Wire bonding equipment with solder wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05235080A JPH05235080A (en) | 1993-09-10 |
| JP2975207B2 true JP2975207B2 (en) | 1999-11-10 |
Family
ID=12517142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4038141A Expired - Fee Related JP2975207B2 (en) | 1992-02-25 | 1992-02-25 | Wire bonding equipment with solder wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2975207B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140129247A (en) * | 2012-10-05 | 2014-11-06 | 가부시키가이샤 신가와 | Antioxidant gas blow-off unit |
| US20150209886A1 (en) * | 2012-10-05 | 2015-07-30 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08242046A (en) * | 1995-03-03 | 1996-09-17 | Rohm Co Ltd | Structure of semiconductor device fitted with temperature fuse |
| KR100401017B1 (en) * | 1999-09-07 | 2003-10-08 | 앰코 테크놀로지 코리아 주식회사 | Heat block and manufacturing method of semiconductor package using the same |
-
1992
- 1992-02-25 JP JP4038141A patent/JP2975207B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140129247A (en) * | 2012-10-05 | 2014-11-06 | 가부시키가이샤 신가와 | Antioxidant gas blow-off unit |
| US20150214180A1 (en) * | 2012-10-05 | 2015-07-30 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
| US20150209886A1 (en) * | 2012-10-05 | 2015-07-30 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
| CN105122434A (en) * | 2012-10-05 | 2015-12-02 | 株式会社新川 | Antioxidant gas blow-off unit |
| US9362251B2 (en) * | 2012-10-05 | 2016-06-07 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
| KR101643244B1 (en) * | 2012-10-05 | 2016-07-27 | 가부시키가이샤 신가와 | Antioxidant gas blow-off unit |
| US9415456B2 (en) * | 2012-10-05 | 2016-08-16 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05235080A (en) | 1993-09-10 |
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