JPH01297834A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH01297834A
JPH01297834A JP63128825A JP12882588A JPH01297834A JP H01297834 A JPH01297834 A JP H01297834A JP 63128825 A JP63128825 A JP 63128825A JP 12882588 A JP12882588 A JP 12882588A JP H01297834 A JPH01297834 A JP H01297834A
Authority
JP
Japan
Prior art keywords
wire
contact
ball
capillary
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63128825A
Other languages
Japanese (ja)
Inventor
Setsuko Honma
本間　攝子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63128825A priority Critical patent/JPH01297834A/en
Publication of JPH01297834A publication Critical patent/JPH01297834A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

PURPOSE:To improve reliability of a device by connecting a contact welding part to a connection member by contact-welding a wire to the contact welded part, and further contact-welding a molten ball to said contact-welded part. CONSTITUTION:A ball 3 is formed on the tip end of a wire projecting from a capillary 5 by making use of electrical discharge by a torch. the wire 4 is taken out, and the capillary 5 is moved onto an external lead 2 to contact-weld the wire 4 and the lead 2. The capillary is lifted and the wire is cut away from a contact-welded part 6, and further a ball 3A is formed on the tip end of the wire 4. The ball 3A is contact-welded on the contact-welding part 6. Then, the capillary 5 is lifted to cut the wire, and a ball 3B is formed on the tip end of the wire 4 for successive bonding. With the arrangement, the mechanical strength of a connection part between the wire 4 and the external lead 2 is improved and the reliability and yield of the device are improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造工程等に用いられるワイヤボ
ンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wire bonding method used in the manufacturing process of semiconductor devices.

〔従来の技術〕[Conventional technology]

従来この種のワイヤボンディングは、キャピラリーから
突出したワイヤの先端部にボールを溶融形成してポンデ
ィングパッド等の接続部材に圧着する第１のボンディン
グ工程と、この接続されたワイヤの他端部を外部リード
等の他の接続部材に圧着する第２のホーンディング工程
と、第２のボンディング終了後次のワイヤボンディング
の準備として、切り離されたワイヤの先端部に再びボー
ルを溶融形成する工程から成っている。Conventionally, this type of wire bonding involves a first bonding process in which a ball is melted and formed on the tip of a wire protruding from a capillary and then crimped onto a connecting member such as a bonding pad, and the other end of the connected wire is bonded to a connecting member such as a bonding pad. The process consists of a second honing process in which the wire is crimped to other connecting members such as external leads, and a process in which a ball is again melted and formed on the tip of the cut-off wire in preparation for the next wire bonding after the second bonding is completed. ing.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のワイヤボンディング方法は、第２のボン
ディング工程において、ワイヤが切り離される前に、ホ
ールを溶融形成することは原理的に不可能である。した
がって、第２のボンディング工程ではボールを作らず、
ワイヤそのものを接続したい部材に圧着するのみで終っ
ていた。ワイヤのみの圧着は溶融して形成したボールの
圧着に比べ、ワイヤと接続部材との接合力が弱くなるた
め、接合部の強度が低くなり半導体装置の信頼性を低下
させるという欠点がある。In the conventional wire bonding method described above, it is theoretically impossible to melt and form a hole before the wire is separated in the second bonding step. Therefore, the second bonding process does not create a ball;
All that was required was to crimp the wire itself to the member to which it was connected. Crimp-bonding using only wires has the disadvantage that the bonding force between the wire and the connecting member is weaker than that of crimping balls formed by melting, which lowers the strength of the bonded portion and lowers the reliability of the semiconductor device.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のワイヤボンディング方法は、キャピラリーから
突出したワイヤの先端部にホールを溶融形成したのち該
ワイヤのボール部を一方の接続部材表面に圧着接続する
第１のボンディング工程と、接続された前記ワイヤの他
端部を他方の接続部材表面に圧着接続する第２のボンデ
ィング工程と、前記第２のボンディング工程により接着
されたワイヤの圧着部上に溶融形成されたワイヤのホー
ルを圧着する工程とを含んで構成される。The wire bonding method of the present invention includes a first bonding step of melting and forming a hole at the tip of a wire protruding from a capillary, and then crimping and connecting the ball portion of the wire to the surface of one of the connecting members; a second bonding step of crimping and connecting the other end to the surface of the other connecting member; and a step of crimping the hole of the wire melted and formed on the crimping portion of the wire bonded in the second bonding step. It consists of:

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.

第１図（ａ）〜（ｆ＞は本発明の一実施例を説明するた
めの工程順に示したキャピラリー近傍の正面図であり、
本発明を半導体素子のボンディングバットと外部リート
との接続に適用した場合を示す。FIGS. 1(a) to 1(f) are front views of the vicinity of the capillary shown in the order of steps for explaining one embodiment of the present invention,
A case is shown in which the present invention is applied to connection between a bonding butt of a semiconductor element and an external lead.

まず第１図（ａ）に示すように、キャピラリー５から突
出したワイヤ４の先端に、電気１・−チの放電等により
ボール３を形成したのち、このボール３をポンディング
パッド１上に圧着し接続する。First, as shown in FIG. 1(a), a ball 3 is formed at the tip of the wire 4 protruding from the capillary 5 by electric discharge, etc., and then this ball 3 is crimped onto the bonding pad 1. and connect.

次に第１図（ｂ）に示すように、ワイヤ４を延ばしなが
らキャピラリー５を外部リード２上に移動させ、ワイヤ
４を圧着して外部リード２と接続させる。Next, as shown in FIG. 1(b), the capillary 5 is moved onto the external lead 2 while extending the wire 4, and the wire 4 is crimped and connected to the external lead 2.

次に第１図（ｃ）に示すように、キャピラリー５を上昇
させると共にワイヤ４を圧着部６より切断する。次に再
びワイヤ４の先端にボール３Ａを形成する。Next, as shown in FIG. 1(c), the capillary 5 is raised and the wire 4 is cut from the crimp portion 6. Next, a ball 3A is formed at the tip of the wire 4 again.

次第１図（ｄ）に示すように、ボール３Ａをワイヤ４の
圧着部６上に圧着する。Next, as shown in FIG. 1(d), the ball 3A is crimped onto the crimping portion 6 of the wire 4.

次に第１図（ｅ）に示すように、キャピラリー５を上昇
させてワイヤ４を切断する。Next, as shown in FIG. 1(e), the capillary 5 is raised and the wire 4 is cut.

次に第１図（ｆ＞に示すように、次のボンディングのた
めにワイヤ４の先端にホール３Ｂを形成する。Next, as shown in FIG. 1(f>), a hole 3B is formed at the tip of the wire 4 for the next bonding.

このように本実施例によれば、外部リード２上のワイヤ
４の圧着部６に再びボール３Ａが圧着接続されるため、
ワイヤ４と外部リード２との接続部の強度は高くなり、
半導体装置の信頼性及び歩留りは向上したものとなる。According to this embodiment, the ball 3A is again crimped and connected to the crimped portion 6 of the wire 4 on the external lead 2.
The strength of the connection between the wire 4 and the external lead 2 is increased,
The reliability and yield of semiconductor devices are improved.

尚、ボール３Ａの圧着はワイヤボンディング１本ごとに
行なうことも、また全ワイヤボンディング終了後、ボー
ル３Ａの２度目の圧着をまとめて行なうことも可能であ
る。また、ワイヤ４は金、アルミニウム、銅等であり、
接続部材は金、銀パラジウム、銅等である。一般に銀パ
ラジウムは低温では接着しづらいといわれているが、本
実施例によれば温度の低い状態でワイヤボンディングが
可能である。The balls 3A can be crimped for each wire bond, or the balls 3A can be crimped a second time at once after all wire bonding is completed. Further, the wire 4 is made of gold, aluminum, copper, etc.
The connecting member is gold, silver palladium, copper, or the like. It is generally said that silver-palladium is difficult to bond at low temperatures, but according to this embodiment, wire bonding is possible at low temperatures.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、ワイヤを圧着して接続部
材に接続したのち、その圧着部に溶融したボールを再度
圧着接続することにより、従来、接続部の強度が低く、
信頼性が悪いとされていた部材にもボンディングでき、
さらに、高温でしかワイヤボンディングできなかった部
材が低温でも接続可能になった。従って本発明を半導体
装置に適用することにより、半導体装置の信頼性を向上
させることができる。As explained above, in the present invention, after the wire is crimped and connected to the connecting member, the molten ball is again crimped and connected to the crimped part, thereby reducing the strength of the connecting part, which was conventionally low.
It is possible to bond to components that were considered to be unreliable.
Furthermore, parts that could previously be wire bonded only at high temperatures can now be connected at low temperatures. Therefore, by applying the present invention to a semiconductor device, the reliability of the semiconductor device can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）〜（ｆ）は本発明の一実施例を説明するた
めの工程順に示したキャピラリー近傍の正面図である。 １・・・ポンディングパッド、２・・・外部リード、３
．３Ａ、３Ｂ・・・ボール、４・・・ワイヤ、５・・・
キャピラリー、６・・・圧着部。FIGS. 1(a) to 1(f) are front views of the vicinity of a capillary shown in the order of steps for explaining one embodiment of the present invention. 1...Ponding pad, 2...External lead, 3
．． 3A, 3B...Ball, 4...Wire, 5...
Capillary, 6...crimping part.

Claims (1)

【特許請求の範囲】[Claims] 　キャピラリーから突出したワイヤの先端部にボールを
溶融形成したのち該ワイヤのボール部を一方の接続部材
表面に圧着接続する第１のボンディング工程と、接続さ
れた前記ワイヤの他端部を他方の接続部材表面に圧着接
続する第２のホーンディング工程と、前記第２のボンデ
ィング工程により接着されたワイヤの圧着部上に溶融形
成されたワイヤのボールを圧着する工程とを含むことを
特徴とするワイヤボンディング方法。A first bonding process in which a ball is melted and formed on the tip of the wire protruding from the capillary, and then the ball part of the wire is crimped and connected to the surface of one connecting member, and the other end of the connected wire is connected to the other side. A wire characterized in that it includes a second honding process of crimping and connecting to the surface of a member, and a process of crimping a ball of the wire melted and formed on the crimp part of the wire bonded in the second bonding process. Bonding method.
JP63128825A 1988-05-25 1988-05-25 Wire bonding method Pending JPH01297834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63128825A JPH01297834A (en) 1988-05-25 1988-05-25 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63128825A JPH01297834A (en) 1988-05-25 1988-05-25 Wire bonding method

Publications (1)

Publication Number Publication Date
JPH01297834A true JPH01297834A (en) 1989-11-30

Family

ID=14994343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63128825A Pending JPH01297834A (en) 1988-05-25 1988-05-25 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH01297834A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972221A (en) * 2014-06-03 2014-08-06 宁波升谱光电半导体有限公司 LED (light-emitting diode) light source packaging structure and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972221A (en) * 2014-06-03 2014-08-06 宁波升谱光电半导体有限公司 LED (light-emitting diode) light source packaging structure and method

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