JPS63215046A - Wedge bonding method - Google Patents

Wedge bonding method

Info

Publication number
JPS63215046A
JPS63215046A JP62047594A JP4759487A JPS63215046A JP S63215046 A JPS63215046 A JP S63215046A JP 62047594 A JP62047594 A JP 62047594A JP 4759487 A JP4759487 A JP 4759487A JP S63215046 A JPS63215046 A JP S63215046A
Authority
JP
Japan
Prior art keywords
bonding
thin wires
bonding tool
wedge
wedge bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62047594A
Other languages
Japanese (ja)
Inventor
Toshihiro Kato
加藤　俊博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62047594A priority Critical patent/JPS63215046A/en
Publication of JPS63215046A publication Critical patent/JPS63215046A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To make a lumped wedge bonding possible, and connect the more number of metal thin wires in a unit area, as compared with prior arts, by applying simultaneously ultrasonic oscillation to a plurality of bonding thin wires sent out from the same hole of a bonding tool. CONSTITUTION:A bonding tool 5 is fixed to an ultrasonic horn 6, and Al thin wires 10 drawn out by a reel 7 are sent out from a guide hole 12 via a clamper 8. A load and ultrasonic energy from the ultrasonic horn 6 are applied to the bonding tool 5 for two Al thin wires 10 inserted en bloc into the hole 12. An electrode to be formed on a semiconductor element 2 and the Al thin wires 10 are bonded at the same time with pressurized friction. Thereby, a lumped wedge bonding is enabled, and the more number of Al thin wires 10 in a unit area can be connected, as compared with prior arts.

Description

【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は超音波振動を利用するウェッジボンディングの
改良に関し、特にパワー素子のワイヤボンディングに好
適するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to improvements in wedge bonding using ultrasonic vibration, and is particularly suitable for wire bonding of power devices.

（従来の技術） 半導体装置の製造には半導体基板に回路もしくは素子を
造込む前処理工程と、この結果得られる回路や素子を必
要な外囲器に組立る組立工程に大別できる。この両工程
ともに現在ではその生産性向上を目指して自動化が採用
され、ボンディング工程用設備には完全な自動機器とし
て、いわゆるＦｕｌｌ　Ａｕｔｏ　Ｂｏｎｄｅｒが開発
、実用化されており、しかも１人の作業者が複数台の機
器を受持ついわゆる多台持ち方式も一般化されている。(Prior Art) The manufacturing of semiconductor devices can be roughly divided into a pretreatment process in which circuits or elements are built into a semiconductor substrate, and an assembly process in which the resulting circuits and elements are assembled into a necessary envelope. Automation is currently being adopted for both of these processes to improve their productivity, and a so-called Full Auto Bonder has been developed and put into practical use as a completely automatic device for bonding process equipment. The so-called multi-device system, which handles multiple devices, has also become common.

このような情況の許、厳しい経済的環境も加わってその
生産性向上を求める声は止まるところを知らずより一層
の前進を目指しており、Ｆｕｌｌ　Ａｕ−ｔｏ　Ｂｏｎ
ｄｅｒなどの最新型では金属細線１本当りの所要ボンデ
ィング時間が２秒を切るような速度に到達している。し
かし、半導体素子の高集積化に伴い、外囲器に設けるピ
ン数が増大しているので、このボンディング時間の短縮
は相変らず大きな技術項目となっており、従ってＦｕｌ
ｌ　Ａｕｔｏ　Ｂｏｎｄｅｒの高速性探求に加えて下記
の技術も開示されている。Given these circumstances, coupled with the harsh economic environment, there is no end to the calls for improved productivity, and we are aiming for further progress.Full Auto Bon
The latest models such as der have reached a speed where the required bonding time for one thin metal wire is less than 2 seconds. However, with the increasing integration of semiconductor devices, the number of pins provided in the package is increasing, so shortening bonding time remains a major technical issue, and therefore full-scale
l In addition to the search for high speed of Auto Bonder, the following technology has also been disclosed.

特開昭５８−８６７３４号公報には第５図ａ、ｂに示す
ように複数の透孔３１・・・をもつボンディングツール
３０を利用する技術が開示されており、具体的にはこの
透孔を結線対象となる電極位置に合致しておき、更にこ
の透孔から繰出す金属細線の先端には球状のふくらみ部
３２を設けておき、二へをボンディングツールにより押
潰して各金属細線を半導体素子に熱圧着する方法を採用
している。この結果２本の金属細線を一工程で半導体素
子電極にボンディングできる点が特徴となる。JP-A-58-86734 discloses a technique using a bonding tool 30 having a plurality of through holes 31 as shown in FIGS. 5a and 5b. A spherical bulge 32 is provided at the tip of the thin metal wire drawn out from this through hole, and the second portion is crushed with a bonding tool to connect each thin metal wire to a semiconductor. A method of thermocompression bonding to the element is used. As a result, a feature is that two thin metal wires can be bonded to semiconductor element electrodes in one step.

一方、第６図に示すように特開昭５６−１３８３２号公
報によると、金属細線の径の大小用ボンディングツール
３３．３４を準備し、これを同時もｑくは若干の時間差
をもってリードフレーム３５のベッド部３６に配置した
半導体素子の電極３７．３８にこの大小線径をもつ金属
細線をボンディングして所要時間の短縮を促進している
。On the other hand, as shown in FIG. 6, according to Japanese Unexamined Patent Publication No. 56-13832, bonding tools 33 and 34 for different diameters of thin metal wires are prepared, and these are simultaneously bonded to the lead frame 35 with a slight time difference. The required time is promoted by bonding thin metal wires having large and small wire diameters to the electrodes 37 and 38 of the semiconductor element arranged on the bed portion 36 of the device.

更に、パワートランジスタなどはその高出力化が図られ
ており、従って金属細線も１５０μ扉から５００μ讃を
適用しているものの、電流容量の観点から線径の大きい
金属細線を数本場合によっては１０数本を使用してボン
ディングによって電極間もしくは外部リードと電極間の
電気的接続を達成している。In addition, power transistors and other devices are designed to have higher output, and therefore the metal wires are used in sizes ranging from 150μ to 500μ, but from the viewpoint of current capacity, it is sometimes necessary to use several metal wires with a large wire diameter of 100μ. Several wires are used to achieve electrical connection between electrodes or between external leads and electrodes by bonding.

（発明が解決しようとする問題点） このように従来の方法では金属細線毎にボンディングツ
ールを圧着して所要の電気的導通を得ていたが、所要時
間の短縮については必ずしも満足できない。特開昭５．
８−８６７３４号公報により開示された技術ではボンデ
ィングツールから繰出す金属細線端にくびれ部を設置す
る必要があるので、複数本の金属細線をボンディングツ
ール中に配置するには、このボール径分だけ余裕を取ら
なければならないし、特開昭５６−１３８９３２号公報
による技術では大小２個のボンディングツールが必要と
なるので、コストアップは避けられず、現在のような厳
しい経済状態では側底採用し得ない手段である。(Problems to be Solved by the Invention) As described above, in the conventional method, the required electrical continuity was obtained by crimping a bonding tool for each thin metal wire, but the reduction in required time was not necessarily satisfactory. Japanese Patent Publication No. 5.
In the technique disclosed in Publication No. 8-86734, it is necessary to install a constriction at the end of the thin metal wire fed out from the bonding tool, so in order to arrange multiple thin metal wires in the bonding tool, it is necessary to install a constriction part for the diameter of the ball. The technology disclosed in Japanese Patent Application Laid-Open No. 56-138932 requires two bonding tools, one large and one small, which inevitably increases costs, and in the current severe economic conditions, it is not possible to use the bottom of the bonding tool. This is a method that cannot be obtained.

本発明は、このような難点を除去する新規なウェッジボ
ンディング方法を提供することを目的とし特にその生産
性向上を図るものである。The present invention aims to provide a new wedge bonding method that eliminates these difficulties, and particularly aims to improve its productivity.

〔発明の構成〕[Structure of the invention]

（問題点を解決するための手段） この目的を達成するのに本発明ではボンディングツール
の同一孔から繰出す複数のボンディング細線に同時に超
音波振動を付与することによって一括したウェッジボン
ディングを可能にする手法を採用する。(Means for solving the problem) In order to achieve this object, the present invention enables batch wedge bonding by simultaneously applying ultrasonic vibration to a plurality of thin bonding wires fed out from the same hole of a bonding tool. Adopt a method.

（作　　用） このように本発明ではボンディングツールの同一孔から
繰出す大口径金属細線の複数に同時に超音波振動を付与
するウェッジボンディング方法でも所望のボンディング
強度が得られるとの事実を基に本発明を完成したもので
、従って高出力比が促進されているパワーＭＯ５ＦＥＴ
もしくはジャイアントトランジスタ等では生産性向上を
可能としたものである。(Function) In this way, the present invention is based on the fact that the desired bonding strength can be obtained even with the wedge bonding method in which ultrasonic vibration is applied simultaneously to a plurality of large-diameter thin metal wires fed out from the same hole of a bonding tool. Power MO5FET which has completed the invention and thus facilitates high power ratio
Alternatively, it is possible to improve productivity with giant transistors and the like.

（実　施　例） 本発明の実施例を第１図乃至第４図により詳述する。(Example) Embodiments of the present invention will be described in detail with reference to FIGS. 1 to 4.

第１図は本発明に係るウェッジボンディング方法を樹脂
封止半導体装置に適用する断面図を示すもので、支持台
Ａに固定するヒートシンク１には半導体素子２が半田層
３によって固着され、又リードフレームのリード端子４
が配置されている。FIG. 1 shows a cross-sectional view in which the wedge bonding method according to the present invention is applied to a resin-sealed semiconductor device, in which a semiconductor element 2 is fixed to a heat sink 1 fixed to a support base A by a solder layer 3, and a lead Frame lead terminal 4
is located.

この半導体素子２のウェッジボンディングを実施する超
温波ボンダーは超音波ホーン６にボンディングツール５
が取付けられ、そのガイドホール１２にはリール７．７
から引出されクランパー８を介して３００μｍＡＱ細線
１０．１０を繰出す。The ultratemperature bonder that performs wedge bonding of the semiconductor element 2 is attached to an ultrasonic horn 6 with a bonding tool 5.
is attached, and the reel 7.7 is attached to the guide hole 12.
A 300 μm AQ thin wire 10.10 is drawn out from the clamper 8.

このガイドホール１２に２本まとめて挿通したＡＱ細線
１０．１０に対して荷重と超音波エネルギーを超音波ホ
ーン６からボンディングツール５に与えることによって
、半導体素子２に形成する電極とＡＱ細線１０．１０間
を摩擦圧接することによって同時にボンディングされる
。By applying a load and ultrasonic energy from the ultrasonic horn 6 to the bonding tool 5 to the AQ thin wires 10.10, which are inserted into the guide hole 12 in pairs, electrodes and the AQ thin wires 10.10 are formed on the semiconductor element 2. 10 are bonded simultaneously by friction welding.

第２図ａにはボンディングツール５の底部に開口するガ
イドホール１２に金属細線１０．１０が挿通された状態
を示し、同図すではこのガイドホール１２の上面図を示
した。FIG. 2a shows a state in which a thin metal wire 10.10 is inserted through a guide hole 12 opening at the bottom of the bonding tool 5, and a top view of this guide hole 12 is shown in FIG.

第３図にはヒートシンク１に対する半導体素子２のマウ
ント状況を示した上面図を示している。FIG. 3 shows a top view showing how the semiconductor element 2 is mounted on the heat sink 1.

即ちＤＩＰ用リードフレームのベッド部に半導体素子を
ダイボンディングし、その周囲に不連続状態で配置する
リード端子４間をギロチン９を利用する前述のウェッジ
ボンディングによって電気的に接続する。That is, the semiconductor element is die-bonded to the bed part of the DIP lead frame, and the lead terminals 4 disposed discontinuously around the bed part are electrically connected by the aforementioned wedge bonding using the guillotine 9.

このベッド部とヒートシンク１は銀ペースト等によって
固着して一体化してこのウェッジボンディング法を施す
のは勿論であるが、この工程後室法のトランスファモー
ルド法によって第３図の点線で囲んだ位置を樹脂で封止
後、　Ｃｕｔ　ａｎｄ　ｂｅｎｄ−ｉｎｇ工程を施して
第４図に示す樹脂封止型半導体装置を完成する。Of course, this bed part and the heat sink 1 are fixed and integrated with silver paste or the like and then subjected to this wedge bonding method, but after this process, the position surrounded by the dotted line in Fig. 3 is After sealing with resin, a cutting and bending process is performed to complete the resin-sealed semiconductor device shown in FIG. 4.

〔発明の効果〕〔Effect of the invention〕

このように本発明ではボンディングツールに設ける同一
の孔部から繰出す複数本の金属細線を同時にウェッジボ
ンディングによって半導体素子電極やリード端子に固着
するので、単位面積内に従来より多くの金属細線が接続
される。しかも、リボン状の金属細線に頼らず従来から
適用されているＡｌｌ、　Ｃｕならびにへρ合金、　Ｃ
ｕ合金の他にＡｕ、Ｐｄ等の断面はぼ円形の金属細線で
差支えないし、更に作業能率が向上して省力化が達成で
きる。In this way, in the present invention, multiple thin metal wires drawn out from the same hole provided in the bonding tool are simultaneously fixed to semiconductor element electrodes and lead terminals by wedge bonding, so more thin metal wires can be connected within a unit area than before. be done. In addition, it does not rely on ribbon-shaped thin metal wires, and can be used with conventionally applied alloys such as All, Cu, and helium alloys.
In addition to U-alloy, thin metal wires made of Au, Pd, etc. with a roughly circular cross section can be used, and work efficiency can be further improved and labor savings can be achieved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明方法を実施するのに適用する装置の概要
を示す断面図、第２図ａ　ｙ、　ｂはこの装置の一部分
を示す断面図及び側面図、第３図は本発明を適用するリ
ードフレームの上面図、第４図は本発明を適用した半導
体装置の断面図、第５図ａ。 ｂは従来のボンディングツールの断面図、第５図Ｃはそ
の端末部分の正面図、第６図は従来のボンディング方法
を示す断面図である。Fig. 1 is a cross-sectional view showing an outline of the apparatus applied to carry out the method of the present invention, Fig. 2 a, y, b are cross-sectional views and side views showing a part of this apparatus, and Fig. 3 is a cross-sectional view showing an outline of the apparatus applied to carry out the method of the present invention. FIG. 4 is a top view of a lead frame to which the present invention is applied, and FIG. 5a is a sectional view of a semiconductor device to which the present invention is applied. 5B is a sectional view of a conventional bonding tool, FIG. 5C is a front view of the terminal portion thereof, and FIG. 6 is a sectional view showing a conventional bonding method.

Claims (1)

【特許請求の範囲】[Claims] 柱状剛性体からなるボンディングツールの同一孔から繰
出す複数のボンディング細線に同時に超音波振動を付与
して、半導体素子に形成する電極間に導通可能な接続を
一括して施すことを特徴とするウェッジボンディング方
法。A wedge characterized in that a plurality of fine bonding wires drawn out from the same hole of a bonding tool made of a columnar rigid body are simultaneously subjected to ultrasonic vibrations to collectively form a conductive connection between electrodes formed on a semiconductor element. Bonding method.
JP62047594A 1987-03-04 1987-03-04 Wedge bonding method Pending JPS63215046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62047594A JPS63215046A (en) 1987-03-04 1987-03-04 Wedge bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62047594A JPS63215046A (en) 1987-03-04 1987-03-04 Wedge bonding method

Publications (1)

Publication Number Publication Date
JPS63215046A true JPS63215046A (en) 1988-09-07

Family

ID=12779573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62047594A Pending JPS63215046A (en) 1987-03-04 1987-03-04 Wedge bonding method

Country Status (1)

Country Link
JP (1) JPS63215046A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067342A (en) * 2005-09-02 2007-03-15 Ultrasonic Engineering Co Ltd Method of bonding wire and wire bonding apparatus
US20160031036A1 (en) * 2013-03-11 2016-02-04 Thompson Friction Welding Linear friction welding

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067342A (en) * 2005-09-02 2007-03-15 Ultrasonic Engineering Co Ltd Method of bonding wire and wire bonding apparatus
US20160031036A1 (en) * 2013-03-11 2016-02-04 Thompson Friction Welding Linear friction welding

Similar Documents

Publication Publication Date Title
JP3935370B2 (en) Bumped semiconductor element manufacturing method, semiconductor device and manufacturing method thereof, circuit board, and electronic device
US6653217B1 (en) Method of connecting a conductive trace to a semiconductor chip
JP2007227893A (en) Semiconductor device manufacturing method
JP2001015541A (en) Semiconductor device and its manufacture
EP1367644A1 (en) Semiconductor electronic device and method of manufacturing thereof
JPS63215046A (en) Wedge bonding method
CN113395841B (en) Module processing method, module and device
JP3997665B2 (en) Connection method between semiconductor element and circuit board
CN214956856U (en) Lead connection structure suitable for deep cavity
US20240290746A1 (en) Ball bonding for semiconductor devices
JP3202193B2 (en) Wire bonding method
JPS6379331A (en) Wire bonding equipment
JPS5944836A (en) Wire bonding method
JPH0428241A (en) Manufacture of semiconductor device
JP2601755B2 (en) Wire bonding apparatus and wire bonding method
JPS61105850A (en) Wire bonding method
JPH0684991A (en) Semiconductor device
JPH01297834A (en) Wire bonding method
JPS593940A (en) Semiconductor device
KR100523914B1 (en) gold ribbon pre-designed wirc bonding tape tape for bonding wire and method for bonding wire with such wire bonding tape
JPS6388833A (en) Tape-carrier mounting tape
JPH01225340A (en) Manufacture of semiconductor metal salient electrode
JPH0233944A (en) Manufacture of semiconductor metal bump electrode
JPH02122530A (en) Wire bonding
CN117276101A (en) External lead wire building and interconnecting method