JPS6388833A - Tape-carrier mounting tape - Google Patents

Tape-carrier mounting tape

Info

Publication number
JPS6388833A
JPS6388833A JP61233312A JP23331286A JPS6388833A JP S6388833 A JPS6388833 A JP S6388833A JP 61233312 A JP61233312 A JP 61233312A JP 23331286 A JP23331286 A JP 23331286A JP S6388833 A JPS6388833 A JP S6388833A
Authority
JP
Japan
Prior art keywords
tape
lead
plating
leads
sections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61233312A
Other languages
Japanese (ja)
Inventor
Yutaka Okuaki
奥秋 裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP61233312A priority Critical patent/JPS6388833A/en
Publication of JPS6388833A publication Critical patent/JPS6388833A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Abstract

PURPOSE:To solve problems such as defective connection to a lead frame of an outer lead by forming a connecting surface to the lead frame of the outer lead shaped to a mounting tape used in a tape carrier mounting system in size thicker than other sections and plating the connecting surface with a low melting-point metal such as tin or solder. CONSTITUTION:Leads 4 are shaped onto a tape 1 consisting of a polyimide film, and tin or solder plating 21 is executed selectively to the outer end sections of the leads 4, connecting sections to at least a lead frame of an outer lead, previously partially. On the other hand, other end sections of the leads 4 are connected to bumps 6 in an element 5, the leads 4 are cut, leaving the plating 21 sections, and the leads 4 are bent similarly through press molding, etc. The outer lead sections and the lead frame 9 are faced oppositely, said plating 21 is interposed among the opposed sections, a bonding tool 22 is pushed against the leads 4, the leads 4 are thermocompression-bonded by pulse currents, and the plating 21 by tin or solder is melted and the leads 4 and the lead frame are connected.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、テープキャリヤ実装テープの改良に関し、
特にそのアウタリードの錫メッキ厚さをインナリード部
のそれより厚く形成するようにしたテープキャリヤ実装
テープに関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) This invention relates to improvements in tape carrier mounting tapes,
In particular, the present invention relates to a tape carrier mounting tape in which the tin plating thickness of the outer lead portion is thicker than that of the inner lead portion.

(従来の技術) 従来半導体装置の実装体の製造に際し、IC。(Conventional technology) Conventionally, when manufacturing a packaged body of a semiconductor device, IC.

LSIなどの素子上の外部導出電極端子を外部接続リー
ドに電気的に導出する方法として、各種の方法が開発さ
れている。
Various methods have been developed for electrically leading out externally leading electrode terminals on elements such as LSIs to external connection leads.

最も良く知られた方法としては、25〜40μmのAu
、AIなどの金属細線を用い、前記外部導出電極端子に
対する配線を相互の熱圧着もしくは超音波接続にて行う
いわゆるワイヤボンディング技術がある。
The most well-known method is to deposit 25-40 μm of Au
There is a so-called wire bonding technique in which wires to the external lead-out electrode terminals are interconnected by mutual thermocompression bonding or ultrasonic bonding using thin metal wires such as , AI, or the like.

この方法は、外部導出電極端子数が比較的少ない場合に
は該接続部に対する信頼性も高い。しかし近年LSIの
ように、素子機能数が著しく高くない、具体的には前記
外部導出電極端子数が100〜150端子にも達し、か
かる接続が素子側及び外部接続リード側の2倍のボンデ
ィングを必要とすることから接続回数が著しく多くなり
それらの接続部の信頼性低下が免がれずかつコスト低減
が困難な状況にあった。
This method also provides high reliability for the connecting portion when the number of external lead-out electrode terminals is relatively small. However, in recent years, unlike LSIs, where the number of element functions is not extremely high, the number of external lead-out electrode terminals has reached 100 to 150 terminals, and such connections require twice as much bonding on the element side and external connection lead side. As a result, the number of connections is significantly increased, and the reliability of these connections inevitably decreases, making it difficult to reduce costs.

一方かかる接続部の信頼性低下を克服すへく、上述の素
子側電極端子を一括処理するようにした金属細線を用い
ないいわゆるワイヤレス技術が実用化されるに到ってい
る。
On the other hand, in order to overcome such a decrease in the reliability of the connection portion, a so-called wireless technology that does not use thin metal wires has been put into practical use, in which the above-mentioned element-side electrode terminals are processed all at once.

その一方法として、たとえばテープキャリヤ方式がある
。この方式では、ウェハプロセス段階で素子の電極端子
上に金属突起物(通常金、又は錫、ハンダが用いられ、
以下バンプともいう)を設け、乙の金属突起物に対して
、別体のポリイミドキャリヤ上の錫メツキ処理した銅箔
リードを一括して加圧、加熱し溶融接続を行うものであ
る。
One method is, for example, a tape carrier method. In this method, metal protrusions (usually gold, tin, or solder) are used on the electrode terminals of the device at the wafer processing stage.
(hereinafter also referred to as bumps), and the tin-plated copper foil leads on a separate polyimide carrier are pressurized and heated all at once to melt and connect the metal protrusions of B.

この場合上述の電極端子数の増加とともに電極ピッチは
著しく小さくなり前記銅箔リードの加工等には極めて高
い精度を必要とする。又同時に該リード先端部が細くな
りその加工は極めて困難になる。
In this case, as the number of electrode terminals increases, the electrode pitch becomes significantly smaller, and processing of the copper foil leads requires extremely high precision. At the same time, the tip of the lead becomes thinner, making it extremely difficult to process it.

ここで第5図、第6図によってより具体的にテープキャ
リヤ方式を説明する。例えば映画用のフィルムと同様に
、送り孔(2)が形成されたポリイミド等の耐熱性テー
プ1の長手方向に多数の半導体素子用の孔3を形成する
。次にこの孔3の部分に銅箔(図示せず)を貼りあらか
じめ設計された所定のパターンにエツチング加工する。
Here, the tape carrier system will be explained in more detail with reference to FIGS. 5 and 6. For example, similar to a movie film, a large number of holes 3 for semiconductor elements are formed in the longitudinal direction of a heat-resistant tape 1 made of polyimide or the like in which feed holes (2) are formed. Next, copper foil (not shown) is applied to the hole 3 and etched into a predetermined pattern designed in advance.

このエツチング加工により銅箔リード4が、図の如く配
置された半導体素子5の方向に孔3の中心方向に突出さ
れた構成となる(この中心方向への突出部をインナリー
ド部とも言う)。該銅箔リード4はその表面にハンダま
たは錫メッキが施しである。
By this etching process, the copper foil lead 4 is configured to protrude toward the center of the hole 3 in the direction of the semiconductor element 5 arranged as shown in the figure (this protrusion toward the center is also referred to as an inner lead section). The surface of the copper foil lead 4 is plated with solder or tin.

次に乙の銅箔リード4の後記するインナリード部分を半
導体素子5の外部導出電極に形成したバンプ6に対応さ
せボンディングツールを押しあてパルス電流を流し接続
を行う。そして常法の如くこれらの部分をエポキシ樹脂
などで封止する。
Next, a bonding tool is pressed against the inner lead portion (to be described later) of the copper foil lead 4 corresponding to the bump 6 formed on the external lead electrode of the semiconductor element 5, and a pulse current is applied thereto to establish the connection. These parts are then sealed with epoxy resin or the like in the usual manner.

尚図中7はインナリ−ド部の支持枠である。−方素子5
の周辺開口部8内で銅箔リード4を切断し第7図の形状
に打ち抜き素子を個別に分離する。
Note that 7 in the figure is a support frame for the inner lead portion. - square element 5
The copper foil lead 4 is cut within the peripheral opening 8 to separately separate punched elements in the shape shown in FIG.

次に上記素子5から外方に延びる銅箔リード4(以下こ
の部分をアウタリード部とも言う)をプレス成形等で折
り曲げ加工し第8図の如くリードフレーム9の中央部に
搭載し、該リードフレーム9の内方端9aにアウタリー
ドを位置させ、同様にボンディングツールによって溶着
し電気的な接続を行うのである。
Next, the copper foil lead 4 extending outward from the element 5 (hereinafter this part is also referred to as the outer lead part) is bent by press molding or the like and mounted on the center part of the lead frame 9 as shown in FIG. An outer lead is positioned at the inner end 9a of the wire 9, and similarly welded using a bonding tool to establish an electrical connection.

(発明が解決しようとする問題点) しかしかかる従来の方式では、上記素子5から外方に延
びるアウタリード部はその材料厚が小さく、幅も狭いな
どの理由で上記プレス手段による切断および折り曲げ加
工時それらの先端形状が必ずしも一定にならない。
(Problems to be Solved by the Invention) However, in such a conventional method, the outer lead portion extending outward from the element 5 has a small material thickness and a narrow width, so that when the material is cut and bent by the pressing means, Their tip shapes are not necessarily constant.

即ち上記折り曲げ加工などによってアウタリード先端の
ピッチずれ又は上下方向への位置変動等を生じ、その結
果リードフレームに対する接続不良、その強度低下等を
招く。そして上記ボンディングツールによる加熱、圧着
条件が一定せず信頼性を低下させかつ作業性、歩留の低
下により経済的に不利益を蒙るなどの問題があった。
That is, the above-mentioned bending process or the like causes pitch deviation or vertical positional fluctuation of the tip of the outer lead, resulting in poor connection to the lead frame, reduction in its strength, and the like. Furthermore, there have been problems in that the heating and compression conditions by the bonding tool are not constant, resulting in lower reliability and lowering workability and yield, resulting in economic disadvantage.

この発明は、特に上記アウタリードのリードフレームに
対する接続不良等の問題点について解決したテープキャ
リヤ実施テープを提供するものである。
The present invention particularly provides a tape carrier implementation tape that solves problems such as poor connection of the outer lead to the lead frame.

(問題点を解決するための手段) この発明は、上記テープキャリヤ実装方式に使用する実
装テープに形成されたアウタリードのリードフレームに
対する接続面を他の部分より厚く錫またはハンダなどの
低融点金属のメッキを施したものである。
(Means for Solving the Problems) The present invention provides that the connection surface of the outer lead formed on the mounting tape used in the tape carrier mounting method to the lead frame is thicker than other parts and is made of a low melting point metal such as tin or solder. It is plated.

(作  用) 乙の発明によれば、9上のようにテープキャリヤ実装テ
ープを構成したので、リードフレーム内方端に対するア
ウタリードの接続時に、該アウタリードに部分的な増厚
された低融点金属のメッキ部があり、上記アウタリード
の位置不良を該増厚メッキ層にてカバーし前記接続不良
等の問題点を除去できる。
(Function) According to the invention of Party B, since the tape carrier mounting tape is configured as shown in 9 above, when the outer lead is connected to the inner end of the lead frame, the partially thickened low melting point metal is applied to the outer lead. There is a plating part, and the defective position of the outer lead can be covered by the thickened plating layer, thereby eliminating problems such as the poor connection.

(実 施 例) 以下この発明の実施例について第1図ないし第4図に基
づき説明する。特に第1図及び第2図は、上記第5図及
び第6図に対応し、同一部分には同−符号を付してその
説明を省略する。
(Embodiments) Examples of the present invention will be described below with reference to FIGS. 1 to 4. In particular, FIGS. 1 and 2 correspond to FIGS. 5 and 6 above, and the same parts are given the same reference numerals and their explanations will be omitted.

本発明においては、既に記載したテープキャリヤ方式と
同様にして、ポリイミドフィルムからなるテープ1上に
リード4を設け、その外端部、即ちアウタリードの少な
くともリードフレームに対する接続部にあらかじめ局部
的に錫またはハンダメッキ21を選択的に施す。一方素
子5のバンプ6には該リード4の他端部が接続され、そ
の後上記メッキ21部分を残して第2図のごとく切断し
、同様にプレス成形等で折り曲げ加工する。
In the present invention, the leads 4 are provided on the tape 1 made of polyimide film in the same manner as in the tape carrier system already described, and the outer ends, that is, at least the connection portions of the outer leads to the lead frame, are locally coated with tin or Solder plating 21 is selectively applied. On the other hand, the other end of the lead 4 is connected to the bump 6 of the element 5, and then cut as shown in FIG. 2, leaving the plated portion 21, and similarly bent by press molding or the like.

次にアウタリード部とリードフレーム9とを対向させ、
その対向部間に上記メッキ21を介在させ、第3図のよ
うにボンディングツール22を押し当て、パルス電流に
より加熱圧着し、錫またはハンダによるメッキ21を溶
融させ接続する。なお、図中30はアイランドである。
Next, the outer lead part and the lead frame 9 are made to face each other,
The plating 21 is interposed between the opposing parts, and a bonding tool 22 is pressed against them as shown in FIG. 3, and the plating 21 made of tin or solder is melted and connected by heating and pressing with a pulse current. Note that 30 in the figure is an island.

第4図はこのリード4のアウタリード部の溶融接続状況
を示し、図中23はこのときに形成される共晶接続部、
24は金メツキエリヤである。
FIG. 4 shows the state of fusion connection of the outer lead portion of this lead 4, and in the figure, 23 indicates the eutectic connection formed at this time;
24 is Golden Metsuki Elijah.

本発明において錫またはハンダによる上記メッキ21は
、上記アウタリードのリードフレーム9に対する接続面
側に設けるのが好ましい。ボンディングツール22の圧
着時メッキ21の溶融によるボンディングツール22へ
の付着がなく連続接続作業上好適である。
In the present invention, the plating 21 made of tin or solder is preferably provided on the connection surface of the outer lead to the lead frame 9. When the bonding tool 22 is crimped, the plating 21 does not melt and adhere to the bonding tool 22, which is suitable for continuous connection work.

本発明において、上記従来例で述べたように前記銅箔リ
ード4上には賜メッキが全面に施しであるが、該錫メッ
キは、通常の0.4μm程度の厚さが好ましい。あまり
メッキ厚を増すと、インナリードを上記バンプ6に接続
する際に溶融錫が隣接バンプ又は回路などをショートさ
せることがあり、又アウタリードの折り曲げ加工時メッ
キ面にクラックが発生し不良品発生の原因になり好まし
くない。
In the present invention, as described in the above conventional example, the copper foil lead 4 is entirely plated, and the tin plating preferably has a normal thickness of about 0.4 μm. If the plating thickness is increased too much, molten tin may short-circuit adjacent bumps or circuits when connecting the inner lead to the bump 6, and cracks may occur on the plating surface when bending the outer lead, resulting in defective products. This is not desirable because it causes

また、一般にボンディングツール面と、アウタリード圧
着部との平行度は1.2度程度以下に調整することが良
いとされている。本発明の上記メッキ21の溶解によっ
て仮りにある量のかたむきがあってもこれを吸収し得る
ことになるので好ましい。さらに、上記ホンディングツ
ール22の圧着温度は300℃〜500℃で設定される
が、実際の作業上その両端では空冷により溶解がうまく
いかず、接続強度低下の原因になることがある。
Further, it is generally considered that the parallelism between the bonding tool surface and the outer lead crimping portion should be adjusted to about 1.2 degrees or less. This is preferable because even if there is a certain amount of stiffness, it can be absorbed by dissolving the plating 21 of the present invention. Furthermore, although the crimp temperature of the honding tool 22 is set at 300° C. to 500° C., in actual work, both ends may not melt properly due to air cooling, which may cause a decrease in connection strength.

そこでその中央部温度を上昇させることがあるが、上述
の如く錫メッキ厚が薄い場合には、メッキ錫が胴中に拡
散しその結果接続強度が低下を招く。この発明において
は上記の如く、中央部にメッキ錫が多量(厚く)に存在
するので、良好なボンディング条件を得る温度設定等が
可能となる。
This may increase the temperature of the central portion, but if the tin plating is thin as described above, the plating tin will diffuse into the shell, resulting in a decrease in connection strength. In this invention, as described above, since a large amount (thickly) of plated tin is present in the central portion, it is possible to set the temperature to obtain good bonding conditions.

(発明の効果) 以上、詳細に説明したようにこの発明によればテープキ
ャリヤ実装方式における実装テープの前記アウタリード
部に、少なくともリードフレーム接続部側に錫またはハ
ンダなどの低融点金属を部分的にメッキしてその量を増
したので、両者接続部の溶融共晶量が多くなり、その結
果上記アウタリードの機械加工等に起因する上下方向で
の浮き等による位置不均一化による接続不良を回避し得
る。
(Effects of the Invention) As described above in detail, according to the present invention, a low melting point metal such as tin or solder is partially applied to the outer lead portion of the mounting tape in the tape carrier mounting method, at least on the lead frame connecting portion side. Since the amount is increased by plating, the amount of molten eutectic at the connection between the two increases, and as a result, connection failures due to uneven positions due to lifting in the vertical direction caused by machining of the outer lead etc. can be avoided. obtain.

また、上記の如くボンディングツールの設定温度を高温
側に設定し得るなど作業条件の設定範囲が広くなり、作
業性が向上し、同時に歩留が向上するなど経済性に有利
である。
In addition, as mentioned above, the setting range of working conditions is widened, such as being able to set the temperature of the bonding tool on the high temperature side, improving workability and at the same time improving yield, which is advantageous in terms of economy.

尚、上記メッキを接続部対向側に施すことにより、ボン
ディングツールによる加圧、加熱に際し該ボンディング
ツールへの溶融錫の付着を避は作業性を向上させること
ができる。
By applying the above-mentioned plating to the opposite side of the connection part, workability can be improved by avoiding adhesion of molten tin to the bonding tool during pressurization and heating by the bonding tool.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図ないし第3図はこの発明のテープキャリヤ実装テ
ープの一実施例におけるリードフレームとアウタリード
との接続工程を説明するための図、第4図は同上工程に
おけるリードフレームとアウタリードとの接続部分の拡
大斜視図、第5図は従来のテープキャリヤ実装テープの
平面図、第6図は第5図のA−A線の断面図、第7図お
よび第8図は従来のテープキャリヤ実装テープにおける
リードフレームとアウタリードとの接続工程を説明する
ための図である。 トポリイミドフイルム (テープ)、4・ リード、5
・・・半導体素子、6・バンプ、7・・支持枠、8・・
・周辺開口部、9・・リードフレーム、9a・・・リー
ドフレームの内方端、22・・ボンディングツール、2
3・・・集品接続部。 −11= 9   シa           匈      ソ
イ足業のテーラ4ヤリヤ吹3にチー7′メ戻戸βh6Q
第5図 18図
1 to 3 are diagrams for explaining the connection process between the lead frame and the outer lead in one embodiment of the tape carrier mounting tape of the present invention, and FIG. 4 is the connection portion between the lead frame and the outer lead in the same process. FIG. 5 is a plan view of a conventional tape carrier mounting tape, FIG. 6 is a sectional view taken along line A-A in FIG. 5, and FIGS. 7 and 8 are views of a conventional tape carrier mounting tape. FIG. 3 is a diagram for explaining a process of connecting a lead frame and an outer lead. Topolyimide film (tape), 4, lead, 5
...Semiconductor element, 6. Bump, 7. Support frame, 8.
- Peripheral opening, 9... Lead frame, 9a... Inner end of lead frame, 22... Bonding tool, 2
3...Collection connection part. -11= 9 Shea 匈 Soi Footwork's Taylor 4 Yariyabuki 3 Chi 7' Me Return Door βh6Q
Figure 5 Figure 18

Claims (3)

【特許請求の範囲】[Claims] (1)耐熱性テープからなりテープキャリヤ実装方式に
用いるテープキャリヤ実装テープにおいて、(a)該実
装テープに形成されるリード素材全面に熱圧着可能な第
1のメッキを施し、 (b)上記リードの少なくともアウタリード部における
外部導出接続側に選択的に熱圧着できる第2のメッキを
施してなるテープキャリヤ実装テープ。
(1) In a tape carrier mounting tape made of heat-resistant tape and used in a tape carrier mounting method, (a) a first plating capable of thermocompression bonding is applied to the entire surface of the lead material formed on the mounting tape, and (b) the lead A tape carrier mounting tape formed by applying a second plating that can be selectively bonded by thermocompression to at least the external lead-out connection side of the outer lead portion of the tape carrier mounting tape.
(2)第1のメッキは、錫、ハンダ、鉛金のいずれかで
あることを特徴とする特許請求の範囲第1項記載のテー
プキャリヤ実装テープ。
(2) The tape carrier mounting tape according to claim 1, wherein the first plating is tin, solder, or lead-gold.
(3)第2のメッキは、錫、ハンダ、鉛などの低融点金
属のメッキであることを特徴とする特許請求の範囲第1
項記載のテープキャリヤ実装テープ。
(3) The second plating is a plating of a low melting point metal such as tin, solder, or lead.
Tape carrier mounting tape as described in section.
JP61233312A 1986-10-02 1986-10-02 Tape-carrier mounting tape Pending JPS6388833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61233312A JPS6388833A (en) 1986-10-02 1986-10-02 Tape-carrier mounting tape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61233312A JPS6388833A (en) 1986-10-02 1986-10-02 Tape-carrier mounting tape

Publications (1)

Publication Number Publication Date
JPS6388833A true JPS6388833A (en) 1988-04-19

Family

ID=16953154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61233312A Pending JPS6388833A (en) 1986-10-02 1986-10-02 Tape-carrier mounting tape

Country Status (1)

Country Link
JP (1) JPS6388833A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179247A (en) * 1990-11-14 1992-06-25 Yamaha Corp Semiconductor device and plating device
EP0501013A2 (en) * 1991-02-28 1992-09-02 Hewlett-Packard Company Shearing stress interconnection apparatus and method
JPH05102250A (en) * 1991-10-11 1993-04-23 Hitachi Cable Ltd Tape carrier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179247A (en) * 1990-11-14 1992-06-25 Yamaha Corp Semiconductor device and plating device
EP0501013A2 (en) * 1991-02-28 1992-09-02 Hewlett-Packard Company Shearing stress interconnection apparatus and method
JPH05102250A (en) * 1991-10-11 1993-04-23 Hitachi Cable Ltd Tape carrier

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