JPH08153711A - エッチング装置 - Google Patents
エッチング装置Info
- Publication number
- JPH08153711A JPH08153711A JP6315473A JP31547394A JPH08153711A JP H08153711 A JPH08153711 A JP H08153711A JP 6315473 A JP6315473 A JP 6315473A JP 31547394 A JP31547394 A JP 31547394A JP H08153711 A JPH08153711 A JP H08153711A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- etching
- substrate
- fluoride gas
- halogen fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims abstract description 163
- 239000000758 substrate Substances 0.000 claims abstract description 150
- 238000000034 method Methods 0.000 claims abstract description 57
- -1 halogen fluoride Chemical class 0.000 claims abstract description 37
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 32
- 230000008569 process Effects 0.000 claims description 25
- 238000011068 loading method Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 abstract description 66
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 229910020323 ClF3 Inorganic materials 0.000 abstract 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 abstract 1
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 97
- 239000010410 layer Substances 0.000 description 78
- 239000007789 gas Substances 0.000 description 54
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052759 nickel Inorganic materials 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 239000011521 glass Substances 0.000 description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 239000013078 crystal Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000000969 carrier Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 description 13
- 229910001873 dinitrogen Inorganic materials 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 239000010407 anodic oxide Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229940078494 nickel acetate Drugs 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6315473A JPH08153711A (ja) | 1994-11-26 | 1994-11-26 | エッチング装置 |
| TW084112514A TW279249B (ko) | 1994-11-26 | 1995-11-23 | |
| CNB2006100054399A CN100481466C (zh) | 1994-11-26 | 1995-11-25 | 半导体器件 |
| KR1019950044538A KR100313386B1 (ko) | 1994-11-26 | 1995-11-25 | 에칭장치 |
| CN95121846A CN1128893C (zh) | 1994-11-26 | 1995-11-25 | 腐蚀设备 |
| CNB991107772A CN1251331C (zh) | 1994-11-26 | 1999-08-05 | 半导体器件 |
| CN99117536A CN1248787A (zh) | 1994-11-26 | 1999-08-05 | 制造半导体器件的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6315473A JPH08153711A (ja) | 1994-11-26 | 1994-11-26 | エッチング装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004068714A Division JP3958294B2 (ja) | 2004-03-11 | 2004-03-11 | 半導体装置の作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08153711A true JPH08153711A (ja) | 1996-06-11 |
Family
ID=18065785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6315473A Withdrawn JPH08153711A (ja) | 1994-11-26 | 1994-11-26 | エッチング装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH08153711A (ko) |
| KR (1) | KR100313386B1 (ko) |
| CN (4) | CN100481466C (ko) |
| TW (1) | TW279249B (ko) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004140153A (ja) * | 2002-10-17 | 2004-05-13 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP2010199570A (ja) * | 2009-01-28 | 2010-09-09 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタの作製方法及び表示装置の作製方法 |
| KR101225312B1 (ko) * | 2005-12-16 | 2013-01-22 | 엘지디스플레이 주식회사 | 프로세스 장치 |
| US8382940B2 (en) | 2002-06-28 | 2013-02-26 | Robert Bosch Gmbh | Device and method for producing chlorine trifluoride and system for etching semiconductor substrates using this device |
| JP2013088541A (ja) * | 2011-10-17 | 2013-05-13 | Hoya Corp | 転写用マスクの製造方法 |
| US8728882B2 (en) | 2012-03-30 | 2014-05-20 | Samsung Display Co., Ltd. | Manufacturing method for thin film transistor array panel |
| WO2016056300A1 (ja) * | 2014-10-10 | 2016-04-14 | 関東電化工業株式会社 | ケイ素化合物用エッチングガス組成物及びエッチング方法 |
| KR20190131428A (ko) | 2018-05-16 | 2019-11-26 | 도쿄엘렉트론가부시키가이샤 | 실리콘 함유막의 에칭 방법, 컴퓨터 기억 매체, 및 실리콘 함유막의 에칭 장치 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3336975B2 (ja) * | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
| CN102074157B (zh) * | 2011-01-07 | 2012-01-11 | 华南理工大学 | 一种敷铜板腐蚀设备 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4498953A (en) * | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
| JPH0410621A (ja) * | 1990-04-27 | 1992-01-14 | Kawasaki Steel Corp | 窒化シリコン膜のエッチング処理方法、及びその装置 |
| JPH06103682B2 (ja) * | 1990-08-09 | 1994-12-14 | 富士通株式会社 | 光励起ドライクリーニング方法および装置 |
| JPH04196529A (ja) * | 1990-11-28 | 1992-07-16 | Toshiba Corp | プラズマ処理装置 |
| JPH04206822A (ja) * | 1990-11-30 | 1992-07-28 | Mitsubishi Electric Corp | 半導体製造装置 |
| JP3176118B2 (ja) * | 1992-03-27 | 2001-06-11 | 株式会社東芝 | 多室型基板処理装置 |
-
1994
- 1994-11-26 JP JP6315473A patent/JPH08153711A/ja not_active Withdrawn
-
1995
- 1995-11-23 TW TW084112514A patent/TW279249B/zh not_active IP Right Cessation
- 1995-11-25 CN CNB2006100054399A patent/CN100481466C/zh not_active Expired - Fee Related
- 1995-11-25 CN CN95121846A patent/CN1128893C/zh not_active Expired - Fee Related
- 1995-11-25 KR KR1019950044538A patent/KR100313386B1/ko not_active IP Right Cessation
-
1999
- 1999-08-05 CN CN99117536A patent/CN1248787A/zh active Pending
- 1999-08-05 CN CNB991107772A patent/CN1251331C/zh not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8382940B2 (en) | 2002-06-28 | 2013-02-26 | Robert Bosch Gmbh | Device and method for producing chlorine trifluoride and system for etching semiconductor substrates using this device |
| JP2004140153A (ja) * | 2002-10-17 | 2004-05-13 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及びプラズマ処理方法 |
| KR101225312B1 (ko) * | 2005-12-16 | 2013-01-22 | 엘지디스플레이 주식회사 | 프로세스 장치 |
| JP2010199570A (ja) * | 2009-01-28 | 2010-09-09 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタの作製方法及び表示装置の作製方法 |
| JP2013088541A (ja) * | 2011-10-17 | 2013-05-13 | Hoya Corp | 転写用マスクの製造方法 |
| US8728882B2 (en) | 2012-03-30 | 2014-05-20 | Samsung Display Co., Ltd. | Manufacturing method for thin film transistor array panel |
| WO2016056300A1 (ja) * | 2014-10-10 | 2016-04-14 | 関東電化工業株式会社 | ケイ素化合物用エッチングガス組成物及びエッチング方法 |
| JPWO2016056300A1 (ja) * | 2014-10-10 | 2017-07-27 | 関東電化工業株式会社 | ケイ素化合物用エッチングガス組成物及びエッチング方法 |
| GB2551017A (en) * | 2014-10-10 | 2017-12-06 | Kanto Denka Kogyo Kk | Etching gas composition for silicon compound, and etching method |
| TWI648429B (zh) * | 2014-10-10 | 2019-01-21 | 關東電化工業股份有限公司 | 矽化合物用蝕刻氣體組成物及蝕刻方法 |
| US10287499B2 (en) | 2014-10-10 | 2019-05-14 | Kanto Denka Kogyo Co., Ltd. | Etching gas composition for silicon compound, and etching method |
| GB2551017B (en) * | 2014-10-10 | 2020-03-11 | Kanto Denka Kogyo Kk | Etching gas composition for silicon compound, and etching method |
| KR20190131428A (ko) | 2018-05-16 | 2019-11-26 | 도쿄엘렉트론가부시키가이샤 | 실리콘 함유막의 에칭 방법, 컴퓨터 기억 매체, 및 실리콘 함유막의 에칭 장치 |
| US11189498B2 (en) | 2018-05-16 | 2021-11-30 | Tokyo Electron Limited | Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100313386B1 (ko) | 2003-06-12 |
| CN1248787A (zh) | 2000-03-29 |
| CN1825600A (zh) | 2006-08-30 |
| CN1128893C (zh) | 2003-11-26 |
| CN1136599A (zh) | 1996-11-27 |
| CN100481466C (zh) | 2009-04-22 |
| KR960019566A (ko) | 1996-06-17 |
| TW279249B (ko) | 1996-06-21 |
| CN1251331C (zh) | 2006-04-12 |
| CN1245976A (zh) | 2000-03-01 |
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Legal Events
| Date | Code | Title | Description |
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| A02 | Decision of refusal |
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