JPH07503761A - 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 - Google Patents
高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置Info
- Publication number
- JPH07503761A JPH07503761A JP5513725A JP51372593A JPH07503761A JP H07503761 A JPH07503761 A JP H07503761A JP 5513725 A JP5513725 A JP 5513725A JP 51372593 A JP51372593 A JP 51372593A JP H07503761 A JPH07503761 A JP H07503761A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- ion
- energy
- charged ions
- highly charged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4204650.5 | 1992-02-15 | ||
| DE4204650A DE4204650C1 (enExample) | 1992-02-15 | 1992-02-15 | |
| PCT/EP1993/000214 WO1993016213A1 (de) | 1992-02-15 | 1993-01-30 | Verfahren und vorrichtung zur oberflächenmodifikation durch physikalisch-chemische reaktionen von gasen oder dämpfen an oberflächen mit unterstützung von hochgeladenen ionen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07503761A true JPH07503761A (ja) | 1995-04-20 |
Family
ID=6451865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5513725A Pending JPH07503761A (ja) | 1992-02-15 | 1993-01-30 | 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5645897A (enExample) |
| EP (1) | EP0625218B1 (enExample) |
| JP (1) | JPH07503761A (enExample) |
| AU (1) | AU3452393A (enExample) |
| DE (1) | DE4204650C1 (enExample) |
| WO (1) | WO1993016213A1 (enExample) |
Families Citing this family (94)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976992A (en) * | 1993-09-27 | 1999-11-02 | Kabushiki Kaisha Toshiba | Method of supplying excited oxygen |
| FR2764110B1 (fr) * | 1997-05-28 | 1999-08-20 | Univ Paris Curie | Dispositif et procede de gravure par ions |
| JP3599564B2 (ja) * | 1998-06-25 | 2004-12-08 | 東京エレクトロン株式会社 | イオン流形成方法及び装置 |
| US6319566B1 (en) | 1997-11-12 | 2001-11-20 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6156393A (en) * | 1997-11-12 | 2000-12-05 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6878417B2 (en) | 1997-11-12 | 2005-04-12 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6921722B2 (en) * | 2000-05-30 | 2005-07-26 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation of the same |
| US7575924B2 (en) | 2000-11-13 | 2009-08-18 | Research Development Foundation | Methods and compositions relating to improved lentiviral vectors and their applications |
| EP1404359A2 (en) * | 2000-12-07 | 2004-04-07 | Board Of Regents, The University Of Texas System | Methods of treatment involving human mda-7 |
| JP4344138B2 (ja) | 2001-02-15 | 2009-10-14 | ユニバーシティ オブ シカゴ | タンパク質の折り畳みに影響する薬剤の酵母スクリーニング |
| EP1412493B1 (en) * | 2001-08-02 | 2011-10-05 | Institut Clayton De La Recherche | Methods and compositions relating to improved lentiviral vector production systems |
| KR20040054699A (ko) * | 2001-10-02 | 2004-06-25 | 엥스띠뛰 끌레이톤 드 라 러쉐르쉬 | 제한된 발현의 렌티바이러스 벡터 및 이의 적용과 관련된방법 및 조성물 |
| DE10149588B4 (de) * | 2001-10-08 | 2017-09-07 | Oerlikon Trading Ag, Trübbach | Verfahren zur Diamantbeschichtung von Substraten |
| EP1483378B1 (en) * | 2001-11-02 | 2013-01-02 | Rice University | Recycling system for manipulation of intracellular nadh availability |
| CA2474910A1 (en) | 2002-02-01 | 2003-08-07 | Sequitur, Inc. | Oligonucleotide compositions with enhanced efficiency |
| WO2003064621A2 (en) * | 2002-02-01 | 2003-08-07 | Ambion, Inc. | HIGH POTENCY siRNAS FOR REDUCING THE EXPRESSION OF TARGET GENES |
| US20060009409A1 (en) | 2002-02-01 | 2006-01-12 | Woolf Tod M | Double-stranded oligonucleotides |
| US20030157269A1 (en) * | 2002-02-20 | 2003-08-21 | University Of Washington | Method and apparatus for precision coating of molecules on the surfaces of materials and devices |
| US20050103272A1 (en) * | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
| DE10208043B4 (de) * | 2002-02-25 | 2011-01-13 | Carl Zeiss Nts Gmbh | Materialbearbeitungssystem und Materialbearbeitungsverfahren |
| US20040009939A1 (en) * | 2002-03-05 | 2004-01-15 | Board Of Regent, The University Of Texas System | Methods of enhancing immune induction involving MDA-7 |
| US7052840B2 (en) * | 2002-04-03 | 2006-05-30 | Capitol Genomix, Inc. | Reversible association of nucleic acid with a carboxylated substrate |
| EP1499736B1 (en) * | 2002-04-26 | 2009-03-04 | Institut National De La Sante Et De La Recherche Medicale (Inserm) | Improved chimeric glycoproteins and pseudotyped lentiviral vectors |
| US7638727B2 (en) | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
| US7494904B2 (en) | 2002-05-08 | 2009-02-24 | Btu International, Inc. | Plasma-assisted doping |
| US7560657B2 (en) | 2002-05-08 | 2009-07-14 | Btu International Inc. | Plasma-assisted processing in a manufacturing line |
| US7432470B2 (en) | 2002-05-08 | 2008-10-07 | Btu International, Inc. | Surface cleaning and sterilization |
| US7497922B2 (en) | 2002-05-08 | 2009-03-03 | Btu International, Inc. | Plasma-assisted gas production |
| US7498066B2 (en) | 2002-05-08 | 2009-03-03 | Btu International Inc. | Plasma-assisted enhanced coating |
| JP5209174B2 (ja) | 2002-05-08 | 2013-06-12 | ビーティーユー インターナショナル,インコーポレーテッド | 複数の放射供給源を有した放射装置およびプラズマ装置 |
| US7445817B2 (en) | 2002-05-08 | 2008-11-04 | Btu International Inc. | Plasma-assisted formation of carbon structures |
| US7465362B2 (en) | 2002-05-08 | 2008-12-16 | Btu International, Inc. | Plasma-assisted nitrogen surface-treatment |
| US20100075423A1 (en) * | 2002-06-12 | 2010-03-25 | Life Technologies Corporation | Methods and compositions relating to polypeptides with rnase iii domains that mediate rna interference |
| US20040248094A1 (en) * | 2002-06-12 | 2004-12-09 | Ford Lance P. | Methods and compositions relating to labeled RNA molecules that reduce gene expression |
| GB2406169B (en) * | 2002-06-12 | 2006-11-01 | Ambion Inc | Methods and compositions relating to labeled rna molecules that reduce gene expression |
| WO2004048583A2 (en) * | 2002-11-22 | 2004-06-10 | Institut Clayton De La Recherche | Compositions and systems for the regulation of genes |
| US7189940B2 (en) | 2002-12-04 | 2007-03-13 | Btu International Inc. | Plasma-assisted melting |
| EP1638587A4 (en) | 2003-02-14 | 2007-04-18 | Univ Missouri | RECIPROCAL PROCEDURES AND COMPOSITIONS CONCERNING PROTEASOMAL INTERFERENCE |
| CN1759122B (zh) * | 2003-03-03 | 2012-06-13 | 得克萨斯州大学系统董事会 | 包含mda-7的组合物和方法 |
| CA2548220A1 (en) * | 2003-12-01 | 2005-09-09 | Introgen Therapeutics, Inc. | Use of mda-7 to inhibit infection by pathogenic organisms |
| US20070281041A1 (en) * | 2004-03-02 | 2007-12-06 | Introgen Therapeutics, Inc. | Compositions and Methods Involving MDA-7 for the Treatment of Cancer |
| AU2005250432B2 (en) | 2004-05-28 | 2011-09-15 | Asuragen, Inc. | Methods and compositions involving microRNA |
| ES2345993T3 (es) | 2004-09-14 | 2010-10-07 | The Regents Of The University Of Colorado, A Body Corporate | Metodo para el tratamiento con bucindolol basado en direccionamiento genetico. |
| CA2857881A1 (en) | 2004-11-12 | 2006-12-28 | Asuragen, Inc. | Methods and compositions involving mirna and mirna inhibitor molecules |
| KR20060055681A (ko) * | 2004-11-18 | 2006-05-24 | 삼성전자주식회사 | 이온빔 보조 스퍼터링 증착장치 |
| US20060142228A1 (en) * | 2004-12-23 | 2006-06-29 | Ambion, Inc. | Methods and compositions concerning siRNA's as mediators of RNA interference |
| WO2006086798A2 (en) * | 2005-02-08 | 2006-08-17 | Board Of Regents, The University Of Texas System | Compositions and methods involving mda-7 for the treatment of cancer |
| US20060257902A1 (en) * | 2005-03-25 | 2006-11-16 | Ambion, Inc. | Methods and compositions for depleting abundant RNA transcripts |
| WO2007092944A2 (en) * | 2006-02-08 | 2007-08-16 | Introgen Therapeutics, Inc. | Compositions and methods involving gene therapy and proteasome modulation |
| WO2008036765A2 (en) | 2006-09-19 | 2008-03-27 | Asuragen, Inc. | Micrornas differentially expressed in pancreatic diseases and uses thereof |
| DE102007054074A1 (de) * | 2007-11-13 | 2009-05-14 | Carl Zeiss Nts Gmbh | System zum Bearbeiten eines Objekts |
| EP2245049B1 (en) | 2008-01-10 | 2015-05-20 | Research Development Foundation | Vaccines and diagnostics for the ehrlichioses |
| BRPI0907637A8 (pt) | 2008-01-25 | 2018-01-02 | P53 Inc | biomarcadores p53 |
| CA2652130A1 (en) * | 2008-01-30 | 2009-07-30 | John C. Polanyi | Method of linear patterning at surfaces |
| EP2990487A1 (en) | 2008-05-08 | 2016-03-02 | Asuragen, INC. | Compositions and methods related to mirna modulation of neovascularization or angiogenesis |
| CA2743057C (en) | 2008-11-07 | 2019-11-26 | Research Development Foundation | Compositions and methods for the inhibition of cripto/grp78 complex formation and signaling |
| JP5651125B2 (ja) | 2008-12-10 | 2015-01-07 | デイナ ファーバー キャンサー インスティチュート,インコーポレイテッド | Mek阻害剤に対する耐性を付与するmek突然変異 |
| US20110045080A1 (en) * | 2009-03-24 | 2011-02-24 | William Marsh Rice University | Single-Walled Carbon Nanotube/Bioactive Substance Complexes and Methods Related Thereto |
| CN102686728B (zh) | 2009-06-29 | 2018-09-18 | 卢米耐克斯公司 | 具有发夹构象的嵌合引物及其使用方法 |
| WO2011025905A1 (en) | 2009-08-28 | 2011-03-03 | Research Development Foundation | Urocortin 2 analogs and uses thereof |
| WO2011032088A1 (en) | 2009-09-11 | 2011-03-17 | Arca Biopharma, Inc. | Polymorphisms in the pde3a gene |
| EP2515899B1 (en) | 2009-12-23 | 2016-05-25 | ARCA biopharma, Inc. | Methods and compositions for cardiovascular diseases and conditions |
| ES2576061T3 (es) | 2010-02-25 | 2016-07-05 | Dana-Farber Cancer Institute, Inc. | Mutaciones de BRAF que confieren resistencia a inhibidores de BRAF |
| EP2542678B1 (en) | 2010-03-04 | 2017-04-12 | InteRNA Technologies B.V. | A MiRNA MOLECULE DEFINED BY ITS SOURCE AND ITS THERAPEUTIC USES IN CANCER ASSOCIATED WITH EMT |
| PL2580322T3 (pl) | 2010-06-09 | 2018-09-28 | Dana-Farber Cancer Institute, Inc. | Mutacja mek1 wykazująca odporność na inhibitory raf i mek |
| WO2012005572A1 (en) | 2010-07-06 | 2012-01-12 | Interna Technologies Bv | Mirna and its diagnostic and therapeutic uses in diseases or conditions associated with melanoma, or in diseases or conditions associated with activated braf pathway |
| ES2629890T3 (es) | 2010-11-17 | 2017-08-16 | Interpace Diagnostics, Llc | miARN como biomarcadores para distinguir entre neoplasias de tiroides benignas y malignas |
| EP2474617A1 (en) | 2011-01-11 | 2012-07-11 | InteRNA Technologies BV | Mir for treating neo-angiogenesis |
| JP2014506791A (ja) | 2011-02-03 | 2014-03-20 | マーナ セラピューティクス インコーポレイテッド | miR−34の合成模倣体 |
| CN105969773A (zh) | 2011-02-03 | 2016-09-28 | 米尔纳医疗股份有限公司 | Mir-124的合成模拟物 |
| WO2013040251A2 (en) | 2011-09-13 | 2013-03-21 | Asurgen, Inc. | Methods and compositions involving mir-135b for distinguishing pancreatic cancer from benign pancreatic disease |
| US20130157884A1 (en) | 2011-10-26 | 2013-06-20 | Asuragen, Inc. | Methods and compositions involving mirna expression levels for distinguishing pancreatic cysts |
| EP3369818B1 (en) | 2011-12-22 | 2021-06-09 | InteRNA Technologies B.V. | Mirna for treating head and neck cancer |
| US9587632B2 (en) | 2012-03-30 | 2017-03-07 | General Electric Company | Thermally-controlled component and thermal control process |
| US9169567B2 (en) | 2012-03-30 | 2015-10-27 | General Electric Company | Components having tab members |
| US9671030B2 (en) | 2012-03-30 | 2017-06-06 | General Electric Company | Metallic seal assembly, turbine component, and method of regulating airflow in turbo-machinery |
| WO2014045126A2 (en) | 2012-09-18 | 2014-03-27 | Uti Limited Partnership | Treatment of pain by inhibition of usp5 de-ubiquitinase |
| US20140100124A1 (en) | 2012-10-04 | 2014-04-10 | Asuragen, Inc. | Diagnostic mirnas for differential diagnosis of incidental pancreatic cystic lesions |
| WO2014072357A1 (en) | 2012-11-06 | 2014-05-15 | Interna Technologies B.V. | Combination for use in treating diseases or conditions associated with melanoma, or treating diseases or conditions associated with activated b-raf pathway |
| WO2014116721A1 (en) | 2013-01-22 | 2014-07-31 | The Arizona Board Of Regents For And On Behalf Of Arizona State University | Geminiviral vector for expression of rituximab |
| EP2961853B1 (en) | 2013-02-28 | 2018-09-19 | The Board of Regents of The University of Texas System | Methods for classifying a cancer as susceptible to tmepai-directed therapies and treating such cancers |
| EP3404116B1 (en) | 2013-03-15 | 2022-10-19 | The University of Chicago | Methods and compositions related to t-cell activity |
| EP3065706A4 (en) | 2013-11-08 | 2017-11-29 | Baylor Research Institute | Nuclear localization of glp-1 stimulates myocardial regeneration and reverses heart failure |
| US11421229B2 (en) | 2015-02-20 | 2022-08-23 | Baylor College Of Medicine | p63 inactivation for the treatment of heart failure |
| WO2017079746A2 (en) | 2015-11-07 | 2017-05-11 | Multivir Inc. | Methods and compositions comprising tumor suppressor gene therapy and immune checkpoint blockade for the treatment of cancer |
| WO2017168348A1 (en) | 2016-03-31 | 2017-10-05 | Baylor Research Institute | Angiopoietin-like protein 8 (angptl8) |
| EP3478325B1 (en) | 2016-07-01 | 2024-07-17 | Research Development Foundation | Elimination of proliferating cells from stem cell-derived grafts |
| JP2020510624A (ja) | 2016-12-12 | 2020-04-09 | マルチビア インコーポレイテッド | がんおよび感染性疾患の治療および予防のための、ウイルス遺伝子治療および免疫チェックポイント阻害剤を含む方法および組成物 |
| EP3704250A1 (en) | 2017-11-03 | 2020-09-09 | InteRNA Technologies B.V. | Mirna molecule, equivalent, antagomir, or source thereof for treating and/or diagnosing a condition and/or a disease associated with neuronal deficiency or for neuronal (re)generation |
| WO2020036635A2 (en) | 2018-03-19 | 2020-02-20 | Multivir Inc. | Methods and compositions comprising tumor suppressor gene therapy and cd122/cd132 agonists for the treatment of cancer |
| AU2019272961B2 (en) | 2018-05-25 | 2025-04-17 | Genvara Biopharma, Inc. | Methods and compositions involving bucindolol for the treatment of atrial fibrillation |
| CN112146967A (zh) * | 2019-06-28 | 2020-12-29 | Fei 公司 | 用于制备和递送用于带电粒子分析的生物样品的系统和方法 |
| WO2021113644A1 (en) | 2019-12-05 | 2021-06-10 | Multivir Inc. | Combinations comprising a cd8+ t cell enhancer, an immune checkpoint inhibitor and radiotherapy for targeted and abscopal effects for the treatment of cancer |
| EP4320445A1 (en) | 2021-04-08 | 2024-02-14 | Joslin Diabetes Center, Inc. | Methods of diagnosing and predicting renal decline |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4281030A (en) * | 1980-05-12 | 1981-07-28 | Bell Telephone Laboratories, Incorporated | Implantation of vaporized material on melted substrates |
| US4297387A (en) * | 1980-06-04 | 1981-10-27 | Battelle Development Corporation | Cubic boron nitride preparation |
| US4452679A (en) * | 1981-10-07 | 1984-06-05 | Becton Dickinson And Company | Substrate with chemically modified surface and method of manufacture thereof |
| IL71530A (en) * | 1984-04-12 | 1987-09-16 | Univ Ramot | Method and apparatus for surface-treating workpieces |
| JPS60221566A (ja) * | 1984-04-18 | 1985-11-06 | Agency Of Ind Science & Technol | 薄膜形成装置 |
| JPS60225422A (ja) * | 1984-04-24 | 1985-11-09 | Hitachi Ltd | 薄膜形成方法およびその装置 |
| US4670064A (en) * | 1985-04-10 | 1987-06-02 | Eaton Corporation | Generating high purity ions by non-thermal excimer laser processing |
| JPH0658909B2 (ja) * | 1985-07-15 | 1994-08-03 | 株式会社日立製作所 | 低温プラズマによる成膜方法及び装置 |
| US4734158A (en) * | 1987-03-16 | 1988-03-29 | Hughes Aircraft Company | Molecular beam etching system and method |
| US4800100A (en) * | 1987-10-27 | 1989-01-24 | Massachusetts Institute Of Technology | Combined ion and molecular beam apparatus and method for depositing materials |
| US4987007A (en) * | 1988-04-18 | 1991-01-22 | Board Of Regents, The University Of Texas System | Method and apparatus for producing a layer of material from a laser ion source |
| US4992298A (en) * | 1988-10-11 | 1991-02-12 | Beamalloy Corporation | Dual ion beam ballistic alloying process |
| US5104634A (en) * | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
| JPH03111578A (ja) * | 1989-06-29 | 1991-05-13 | Toshiba Corp | 薄膜形成方法及び薄膜形成装置 |
| US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
| US5534311A (en) * | 1995-05-31 | 1996-07-09 | The United States Of America As Represented By The Secretary Of The Navy | Production of structures by electrostatically-focused deposition |
-
1992
- 1992-02-15 DE DE4204650A patent/DE4204650C1/de not_active Expired - Fee Related
-
1993
- 1993-01-30 WO PCT/EP1993/000214 patent/WO1993016213A1/de not_active Ceased
- 1993-01-30 EP EP93917359A patent/EP0625218B1/de not_active Expired - Lifetime
- 1993-01-30 AU AU34523/93A patent/AU3452393A/en not_active Abandoned
- 1993-01-30 US US08/284,632 patent/US5645897A/en not_active Expired - Fee Related
- 1993-01-30 JP JP5513725A patent/JPH07503761A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0625218A1 (de) | 1994-11-23 |
| DE4204650C1 (enExample) | 1993-07-08 |
| US5645897A (en) | 1997-07-08 |
| WO1993016213A1 (de) | 1993-08-19 |
| AU3452393A (en) | 1993-09-03 |
| EP0625218B1 (de) | 1996-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH07503761A (ja) | 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 | |
| US10998167B2 (en) | Ion beam etch without need for wafer tilt or rotation | |
| US6207282B1 (en) | Substrate surface treatment method | |
| JP4097695B2 (ja) | 平行イオン光学素子および高電流低エネルギイオンビーム装置 | |
| US8937001B2 (en) | Patterning of nanostructures | |
| US8367525B2 (en) | Rapid patterning of nanostructures | |
| US7094702B2 (en) | Layer-by-layer etching apparatus using neutral beam and method of etching using the same | |
| CN102414345B (zh) | 制备超高温氢分子的方法和使用超高温氢分子选择性断裂在基质表面中或基质表面上的分子的C-H和/或Si-H键的方法 | |
| JP2001023959A (ja) | プラズマ処理装置 | |
| JP2007277708A (ja) | 成膜装置および成膜方法 | |
| US6101972A (en) | Plasma processing system and method | |
| JP2019114692A (ja) | 成膜方法 | |
| JP3386175B2 (ja) | ガスクラスターイオン援用による化合物薄膜の形成方法 | |
| TW201933479A (zh) | 成膜方法 | |
| KR100445105B1 (ko) | 가스 클러스터 이온빔을 이용한 아이.티.오 박막 표면처리시스템 및 그 방법 | |
| JP2002289582A (ja) | 中性粒子ビーム処理装置 | |
| CN100517553C (zh) | 用于膨胀热等离子体的电感耦合的系统和方法 | |
| Kolpakov et al. | Off-Electrode Plasma of High-Voltage Gas Discharge for Micro-and Nanotechnology Problems | |
| JP2963116B2 (ja) | プラズマ処理方法およびプラズマ処理装置 | |
| JPH0547713A (ja) | プラズマ処理装置 | |
| JPH0254758A (ja) | 薄膜形成装置 | |
| JPH10112426A (ja) | 中性アルゴンビームを用いた基体表面処理方法 | |
| JP2004124205A (ja) | 堆積膜形成方法 | |
| WO2003092033A1 (fr) | Generateur de faisceaux utilisant une molecule metallique polynucleaire |