JPH07503761A - 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 - Google Patents

高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置

Info

Publication number
JPH07503761A
JPH07503761A JP5513725A JP51372593A JPH07503761A JP H07503761 A JPH07503761 A JP H07503761A JP 5513725 A JP5513725 A JP 5513725A JP 51372593 A JP51372593 A JP 51372593A JP H07503761 A JPH07503761 A JP H07503761A
Authority
JP
Japan
Prior art keywords
ions
ion
energy
charged ions
highly charged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5513725A
Other languages
English (en)
Japanese (ja)
Inventor
アンドレ，ユルゲン
Original Assignee
ホフマイスター，ヘルムート
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ホフマイスター，ヘルムート filed Critical ホフマイスター，ヘルムート
Publication of JPH07503761A publication Critical patent/JPH07503761A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP5513725A 1992-02-15 1993-01-30 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 Pending JPH07503761A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4204650A DE4204650C1 (enExample) 1992-02-15 1992-02-15
DE4204650.5 1992-02-15
PCT/EP1993/000214 WO1993016213A1 (de) 1992-02-15 1993-01-30 Verfahren und vorrichtung zur oberflächenmodifikation durch physikalisch-chemische reaktionen von gasen oder dämpfen an oberflächen mit unterstützung von hochgeladenen ionen

Publications (1)

Publication Number Publication Date
JPH07503761A true JPH07503761A (ja) 1995-04-20

Family

ID=6451865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5513725A Pending JPH07503761A (ja) 1992-02-15 1993-01-30 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置

Country Status (6)

Country Link
US (1) US5645897A (enExample)
EP (1) EP0625218B1 (enExample)
JP (1) JPH07503761A (enExample)
AU (1) AU3452393A (enExample)
DE (1) DE4204650C1 (enExample)
WO (1) WO1993016213A1 (enExample)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0168699B1 (ko) * 1993-09-27 1999-02-01 사토 후미오 여기산소 또는 여기가스의 생성방법 및 공급방법
FR2764110B1 (fr) * 1997-05-28 1999-08-20 Univ Paris Curie Dispositif et procede de gravure par ions
JP3599564B2 (ja) * 1998-06-25 2004-12-08 東京エレクトロン株式会社 イオン流形成方法及び装置
US6156393A (en) * 1997-11-12 2000-12-05 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6878417B2 (en) 1997-11-12 2005-04-12 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6319566B1 (en) 1997-11-12 2001-11-20 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6921722B2 (en) * 2000-05-30 2005-07-26 Ebara Corporation Coating, modification and etching of substrate surface with particle beam irradiation of the same
US7575924B2 (en) 2000-11-13 2009-08-18 Research Development Foundation Methods and compositions relating to improved lentiviral vectors and their applications
AU2002220257A1 (en) * 2000-12-07 2002-06-18 Board Of Regents, The University Of Texas System Methods of treatment involving human mda-7
US7045290B2 (en) 2001-02-15 2006-05-16 The University Of Chicago Yeast screens for treatment of human disease
ATE527347T1 (de) 2001-08-02 2011-10-15 Inst Clayton De La Rech Verfahren und zusammensetzungen im zusammenhang mit verbesserten lentivirusvektor- produktionssystemen
CA2462628C (en) * 2001-10-02 2019-08-20 Institut Clayton De La Recherche Restricted expression lentiviral vectors
DE10149588B4 (de) * 2001-10-08 2017-09-07 Oerlikon Trading Ag, Trübbach Verfahren zur Diamantbeschichtung von Substraten
CA2466133A1 (en) * 2001-11-02 2003-05-15 Rice University Recycling system for manipulation of intracellular nadh availability
US20030166282A1 (en) * 2002-02-01 2003-09-04 David Brown High potency siRNAS for reducing the expression of target genes
EP1478656B1 (en) 2002-02-01 2009-09-16 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US20060009409A1 (en) 2002-02-01 2006-01-12 Woolf Tod M Double-stranded oligonucleotides
US20030157269A1 (en) * 2002-02-20 2003-08-21 University Of Washington Method and apparatus for precision coating of molecules on the surfaces of materials and devices
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
DE10208043B4 (de) * 2002-02-25 2011-01-13 Carl Zeiss Nts Gmbh Materialbearbeitungssystem und Materialbearbeitungsverfahren
US20040009939A1 (en) * 2002-03-05 2004-01-15 Board Of Regent, The University Of Texas System Methods of enhancing immune induction involving MDA-7
US7052840B2 (en) * 2002-04-03 2006-05-30 Capitol Genomix, Inc. Reversible association of nucleic acid with a carboxylated substrate
KR101002955B1 (ko) * 2002-04-26 2010-12-21 인스티튜트 클레이톤 드 라 리쎄르셰 개선된 키메라 당단백질 및 슈도타입 렌티바이러스 벡터
US7494904B2 (en) 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US7465362B2 (en) 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US7432470B2 (en) 2002-05-08 2008-10-07 Btu International, Inc. Surface cleaning and sterilization
JP2005524963A (ja) 2002-05-08 2005-08-18 ダナ・コーポレーション プラズマ触媒
US7498066B2 (en) 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
US7497922B2 (en) 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US7560657B2 (en) 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7445817B2 (en) 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
WO2003106630A2 (en) * 2002-06-12 2003-12-24 Ambion, Inc. Methods and compositions relating to polypeptides with rnase iii domains that mediate rna interference
US20040248094A1 (en) * 2002-06-12 2004-12-09 Ford Lance P. Methods and compositions relating to labeled RNA molecules that reduce gene expression
US20100075423A1 (en) * 2002-06-12 2010-03-25 Life Technologies Corporation Methods and compositions relating to polypeptides with rnase iii domains that mediate rna interference
CA2506798C (en) * 2002-11-22 2013-01-22 Institut Clayton De La Recherche Compositions and systems for the regulation of genes
US7189940B2 (en) 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
EP2241330A1 (en) 2003-02-14 2010-10-20 The Curators Of The University Of Missouri Contraceptive methods and compositions related to proteasomal interference
EP1603943A2 (en) * 2003-03-03 2005-12-14 Board of Regents, The University of Texas System Methods and compositions involving mda-7
US8034790B2 (en) * 2003-12-01 2011-10-11 Introgen Therapeutics Use of MDA-7 to inhibit pathogenic infectious organisms
US20070281041A1 (en) * 2004-03-02 2007-12-06 Introgen Therapeutics, Inc. Compositions and Methods Involving MDA-7 for the Treatment of Cancer
EP2471924A1 (en) 2004-05-28 2012-07-04 Asuragen, INC. Methods and compositions involving microRNA
CN104644627A (zh) 2004-09-14 2015-05-27 科罗拉多大学董事会 基于基因靶向使用布新洛尔的治疗方法
ES2534300T3 (es) 2004-11-12 2015-04-21 Asuragen, Inc. Procedimientos y composiciones que implican miARN y moléculas inhibidoras de miARN
KR20060055681A (ko) * 2004-11-18 2006-05-24 삼성전자주식회사 이온빔 보조 스퍼터링 증착장치
US20060142228A1 (en) * 2004-12-23 2006-06-29 Ambion, Inc. Methods and compositions concerning siRNA's as mediators of RNA interference
EP1863516A2 (en) * 2005-02-08 2007-12-12 Board of Regents, The University of Texas System Compositions and methods involving mda-7 for the treatment of cancer
WO2006110314A2 (en) 2005-03-25 2006-10-19 Ambion, Inc. Methods and compositions for depleting abundant rna transcripts
WO2007092944A2 (en) * 2006-02-08 2007-08-16 Introgen Therapeutics, Inc. Compositions and methods involving gene therapy and proteasome modulation
CA2664383C (en) 2006-09-19 2017-08-22 Asuragen, Inc. Micrornas differentially expressed in pancreatic diseases and uses thereof
DE102007054074A1 (de) 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System zum Bearbeiten eines Objekts
WO2009102509A2 (en) 2008-01-10 2009-08-20 Research Development Foundation Vaccines and diagnostics for the ehrlichioses
EP2245464B1 (en) 2008-01-25 2016-12-14 MultiVir Inc. P53 biomarkers
CA2652130A1 (en) * 2008-01-30 2009-07-30 John C. Polanyi Method of linear patterning at surfaces
US8258111B2 (en) 2008-05-08 2012-09-04 The Johns Hopkins University Compositions and methods related to miRNA modulation of neovascularization or angiogenesis
CN102272157B (zh) 2008-11-07 2015-11-25 研究发展基金会 用于抑制cripto/grp78复合物形成和信号的组合物和方法
EP2370568B1 (en) 2008-12-10 2017-07-19 Dana-Farber Cancer Institute, Inc. Mek mutations conferring resistance to mek inhibitors
US20110045080A1 (en) * 2009-03-24 2011-02-24 William Marsh Rice University Single-Walled Carbon Nanotube/Bioactive Substance Complexes and Methods Related Thereto
JP5785942B2 (ja) 2009-06-29 2015-09-30 ルミネックス コーポレーション ヘアピンコンフォメーションを有するキメラプライマーおよびその使用法
EP2470560B1 (en) 2009-08-28 2015-06-10 Research Development Foundation Urocortin 2 analogs and uses thereof
WO2011032088A1 (en) 2009-09-11 2011-03-17 Arca Biopharma, Inc. Polymorphisms in the pde3a gene
ES2587191T3 (es) 2009-12-23 2016-10-21 Arca Biopharma, Inc. Métodos y composiciones para enfermedades y afecciones cardiovasculares
CA2789696C (en) 2010-02-25 2017-11-07 Dana-Farber Cancer Institute, Inc. Braf mutations conferring resistance to braf inhibitors
EP3214174B1 (en) 2010-03-04 2019-10-16 InteRNA Technologies B.V. A mirna molecule defined by its source and its diagnostic and therapeutic uses in diseases or conditions associated with emt
EP2580322B1 (en) 2010-06-09 2018-01-10 Dana-Farber Cancer Institute, Inc. A mek 1 mutation conferring resistance to raf and mek inhibitors
EP2591106A1 (en) 2010-07-06 2013-05-15 InteRNA Technologies B.V. Mirna and its diagnostic and therapeutic uses in diseases or conditions associated with melanoma, or in diseases or conditions associated with activated braf pathway
JP6155194B2 (ja) 2010-11-17 2017-06-28 インターペース ダイアグノスティックス リミテッド ライアビリティ カンパニー 良性甲状腺新生物と悪性甲状腺新生物を区別するためのバイオマーカーとしてのｍｉＲＮＡ
EP2474617A1 (en) 2011-01-11 2012-07-11 InteRNA Technologies BV Mir for treating neo-angiogenesis
AU2012212023B9 (en) 2011-02-03 2017-01-12 Mirna Therapeutics, Inc. Synthetic mimics of miR-34
US9222085B2 (en) 2011-02-03 2015-12-29 Mirna Therapeutics, Inc. Synthetic mimics of MIR-124
US9644241B2 (en) 2011-09-13 2017-05-09 Interpace Diagnostics, Llc Methods and compositions involving miR-135B for distinguishing pancreatic cancer from benign pancreatic disease
WO2013063519A1 (en) 2011-10-26 2013-05-02 Asuragen, Inc. Methods and compositions involving mirna expression levels for distinguishing pancreatic cysts
EP3369818B1 (en) 2011-12-22 2021-06-09 InteRNA Technologies B.V. Mirna for treating head and neck cancer
US9671030B2 (en) 2012-03-30 2017-06-06 General Electric Company Metallic seal assembly, turbine component, and method of regulating airflow in turbo-machinery
US9169567B2 (en) 2012-03-30 2015-10-27 General Electric Company Components having tab members
US9587632B2 (en) 2012-03-30 2017-03-07 General Electric Company Thermally-controlled component and thermal control process
WO2014045126A2 (en) 2012-09-18 2014-03-27 Uti Limited Partnership Treatment of pain by inhibition of usp5 de-ubiquitinase
US20140100124A1 (en) 2012-10-04 2014-04-10 Asuragen, Inc. Diagnostic mirnas for differential diagnosis of incidental pancreatic cystic lesions
US10201556B2 (en) 2012-11-06 2019-02-12 Interna Technologies B.V. Combination for use in treating diseases or conditions associated with melanoma, or treating diseases or conditions associated with activated B-raf pathway
WO2014116721A1 (en) 2013-01-22 2014-07-31 The Arizona Board Of Regents For And On Behalf Of Arizona State University Geminiviral vector for expression of rituximab
EP2961853B1 (en) 2013-02-28 2018-09-19 The Board of Regents of The University of Texas System Methods for classifying a cancer as susceptible to tmepai-directed therapies and treating such cancers
ES2935257T3 (es) 2013-03-15 2023-03-03 Univ Chicago Métodos y composiciones relacionadas con la actividad de las células T
US10028902B2 (en) 2013-11-08 2018-07-24 Baylor Research Institute Nuclear localization of GLP-1 stimulates myocardial regeneration and reverses heart failure
WO2016134293A1 (en) 2015-02-20 2016-08-25 Baylor College Of Medicine p63 INACTIVATION FOR THE TREATMENT OF HEART FAILURE
US20190038713A1 (en) 2015-11-07 2019-02-07 Multivir Inc. Compositions comprising tumor suppressor gene therapy and immune checkpoint blockade for the treatment of cancer
CA3019635A1 (en) 2016-03-31 2017-10-05 Baylor Research Institute Angiopoietin-like protein 8 (angptl8)
AU2017290805B2 (en) 2016-07-01 2023-11-16 Research Development Foundation Elimination of proliferating cells from stem cell-derived grafts
WO2018111902A1 (en) 2016-12-12 2018-06-21 Multivir Inc. Methods and compositions comprising viral gene therapy and an immune checkpoint inhibitor for treatment and prevention of cancer and infectious diseases
AU2018358016A1 (en) 2017-11-03 2020-05-07 Interna Technologies B.V. MiRNA molecule, equivalent, antagomir, or source thereof for treating and/or diagnosing a condition and/or a disease associated with neuronal deficiency or for neuronal (re)generation
CA3094329A1 (en) 2018-03-19 2020-02-20 Multivir Inc. Methods and compositions comprising tumor suppressor gene therapy and cd122/cd132 agonists for the treatment of cancer
MX2020012717A (es) 2018-05-25 2021-07-15 Arca Biopharma Inc Métodos y composiciones con bucindolol para el tratamiento de la fibrilación auricular.
CN112146967A (zh) * 2019-06-28 2020-12-29 Fei 公司 用于制备和递送用于带电粒子分析的生物样品的系统和方法
WO2021113644A1 (en) 2019-12-05 2021-06-10 Multivir Inc. Combinations comprising a cd8+ t cell enhancer, an immune checkpoint inhibitor and radiotherapy for targeted and abscopal effects for the treatment of cancer
CA3214688A1 (en) 2021-04-08 2022-10-13 Andrzej KROLEWSKI Methods of diagnosing and predicting renal decline

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
US4297387A (en) * 1980-06-04 1981-10-27 Battelle Development Corporation Cubic boron nitride preparation
US4452679A (en) * 1981-10-07 1984-06-05 Becton Dickinson And Company Substrate with chemically modified surface and method of manufacture thereof
IL71530A (en) * 1984-04-12 1987-09-16 Univ Ramot Method and apparatus for surface-treating workpieces
JPS60221566A (ja) * 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
JPS60225422A (ja) * 1984-04-24 1985-11-09 Hitachi Ltd 薄膜形成方法およびその装置
US4670064A (en) * 1985-04-10 1987-06-02 Eaton Corporation Generating high purity ions by non-thermal excimer laser processing
JPH0658909B2 (ja) * 1985-07-15 1994-08-03 株式会社日立製作所 低温プラズマによる成膜方法及び装置
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US4992298A (en) * 1988-10-11 1991-02-12 Beamalloy Corporation Dual ion beam ballistic alloying process
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
JPH03111578A (ja) * 1989-06-29 1991-05-13 Toshiba Corp 薄膜形成方法及び薄膜形成装置
US5508368A (en) * 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
US5534311A (en) * 1995-05-31 1996-07-09 The United States Of America As Represented By The Secretary Of The Navy Production of structures by electrostatically-focused deposition

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