DE4204650C1 - - Google Patents
Info
- Publication number
- DE4204650C1 DE4204650C1 DE4204650A DE4204650A DE4204650C1 DE 4204650 C1 DE4204650 C1 DE 4204650C1 DE 4204650 A DE4204650 A DE 4204650A DE 4204650 A DE4204650 A DE 4204650A DE 4204650 C1 DE4204650 C1 DE 4204650C1
- Authority
- DE
- Germany
- Prior art keywords
- ions
- ion
- energy
- plasma
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000002500 ions Chemical class 0.000 claims abstract description 163
- 238000000034 method Methods 0.000 claims abstract description 65
- 210000002381 plasma Anatomy 0.000 claims abstract description 40
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 239000012530 fluid Substances 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000012986 modification Methods 0.000 claims abstract description 10
- 239000007787 solid Substances 0.000 claims abstract description 5
- 238000013459 approach Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 46
- 238000000576 coating method Methods 0.000 claims description 44
- 239000011248 coating agent Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 20
- 230000004913 activation Effects 0.000 claims description 19
- 238000010884 ion-beam technique Methods 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 16
- 230000004048 modification Effects 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- -1 EZR ion Chemical class 0.000 claims description 3
- 230000002349 favourable effect Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 claims 1
- 239000000428 dust Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000005040 ion trap Methods 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 230000003213 activating effect Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 56
- 125000004429 atom Chemical group 0.000 description 35
- 239000000463 material Substances 0.000 description 18
- 238000001994 activation Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 238000005381 potential energy Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012634 optical imaging Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000007725 thermal activation Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000036651 mood Effects 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4204650A DE4204650C1 (enExample) | 1992-02-15 | 1992-02-15 | |
| US08/284,632 US5645897A (en) | 1992-02-15 | 1993-01-30 | Process and device for surface-modification by physico-chemical reactions of gases or vapors on surfaces, using highly-charged ions |
| JP5513725A JPH07503761A (ja) | 1992-02-15 | 1993-01-30 | 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 |
| PCT/EP1993/000214 WO1993016213A1 (de) | 1992-02-15 | 1993-01-30 | Verfahren und vorrichtung zur oberflächenmodifikation durch physikalisch-chemische reaktionen von gasen oder dämpfen an oberflächen mit unterstützung von hochgeladenen ionen |
| EP93917359A EP0625218B1 (de) | 1992-02-15 | 1993-01-30 | Verfahren und vorrichtung zur oberflächenmodifikation durch physikalisch-chemische reaktionen von gasen oder dämpfen an oberflächen mit unterstützung von hochgeladenen ionen |
| AU34523/93A AU3452393A (en) | 1992-02-15 | 1993-01-30 | Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4204650A DE4204650C1 (enExample) | 1992-02-15 | 1992-02-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4204650C1 true DE4204650C1 (enExample) | 1993-07-08 |
Family
ID=6451865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4204650A Expired - Fee Related DE4204650C1 (enExample) | 1992-02-15 | 1992-02-15 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5645897A (enExample) |
| EP (1) | EP0625218B1 (enExample) |
| JP (1) | JPH07503761A (enExample) |
| AU (1) | AU3452393A (enExample) |
| DE (1) | DE4204650C1 (enExample) |
| WO (1) | WO1993016213A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998054747A1 (fr) * | 1997-05-28 | 1998-12-03 | Universite Pierre Et Marie Curie | Dispositif et procede de gravure par ions |
| EP2061068A1 (en) * | 2007-11-13 | 2009-05-20 | Carl Zeiss NTS GmbH | System for processing an object |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976992A (en) * | 1993-09-27 | 1999-11-02 | Kabushiki Kaisha Toshiba | Method of supplying excited oxygen |
| JP3599564B2 (ja) * | 1998-06-25 | 2004-12-08 | 東京エレクトロン株式会社 | イオン流形成方法及び装置 |
| US6878417B2 (en) | 1997-11-12 | 2005-04-12 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6319566B1 (en) | 1997-11-12 | 2001-11-20 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6156393A (en) * | 1997-11-12 | 2000-12-05 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6921722B2 (en) * | 2000-05-30 | 2005-07-26 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation of the same |
| US7575924B2 (en) | 2000-11-13 | 2009-08-18 | Research Development Foundation | Methods and compositions relating to improved lentiviral vectors and their applications |
| WO2002045737A2 (en) * | 2000-12-07 | 2002-06-13 | Board Of Regents, The University Of Texas System | Methods of treatment involving human mda-7 |
| WO2002065136A2 (en) | 2001-02-15 | 2002-08-22 | University Of Chicago | Yeast screens for agents affecting protein folding |
| ATE527347T1 (de) | 2001-08-02 | 2011-10-15 | Inst Clayton De La Rech | Verfahren und zusammensetzungen im zusammenhang mit verbesserten lentivirusvektor- produktionssystemen |
| AU2002343458B2 (en) | 2001-10-02 | 2008-03-20 | Institut Clayton De La Recherche | Methods and compositions relating to restricted expression lentiviral vectors and their applications |
| DE10149588B4 (de) * | 2001-10-08 | 2017-09-07 | Oerlikon Trading Ag, Trübbach | Verfahren zur Diamantbeschichtung von Substraten |
| CA2466133A1 (en) * | 2001-11-02 | 2003-05-15 | Rice University | Recycling system for manipulation of intracellular nadh availability |
| EP1572902B1 (en) | 2002-02-01 | 2014-06-11 | Life Technologies Corporation | HIGH POTENCY siRNAS FOR REDUCING THE EXPRESSION OF TARGET GENES |
| US20060009409A1 (en) | 2002-02-01 | 2006-01-12 | Woolf Tod M | Double-stranded oligonucleotides |
| EP2455467B1 (en) | 2002-02-01 | 2016-10-05 | Life Technologies Corporation | Double-stranded oligonucleotides |
| US20030157269A1 (en) * | 2002-02-20 | 2003-08-21 | University Of Washington | Method and apparatus for precision coating of molecules on the surfaces of materials and devices |
| DE10208043B4 (de) * | 2002-02-25 | 2011-01-13 | Carl Zeiss Nts Gmbh | Materialbearbeitungssystem und Materialbearbeitungsverfahren |
| US20050103272A1 (en) * | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
| US20040009939A1 (en) * | 2002-03-05 | 2004-01-15 | Board Of Regent, The University Of Texas System | Methods of enhancing immune induction involving MDA-7 |
| US7052840B2 (en) * | 2002-04-03 | 2006-05-30 | Capitol Genomix, Inc. | Reversible association of nucleic acid with a carboxylated substrate |
| KR101002955B1 (ko) * | 2002-04-26 | 2010-12-21 | 인스티튜트 클레이톤 드 라 리쎄르셰 | 개선된 키메라 당단백질 및 슈도타입 렌티바이러스 벡터 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998054747A1 (fr) * | 1997-05-28 | 1998-12-03 | Universite Pierre Et Marie Curie | Dispositif et procede de gravure par ions |
| FR2764110A1 (fr) * | 1997-05-28 | 1998-12-04 | Univ Paris Curie | Dispositif et procede de gravure par ions |
| EP2061068A1 (en) * | 2007-11-13 | 2009-05-20 | Carl Zeiss NTS GmbH | System for processing an object |
| US8008639B2 (en) | 2007-11-13 | 2011-08-30 | Carl Zeiss Nts Gmbh | System for processing an object |
Also Published As
| Publication number | Publication date |
|---|---|
| US5645897A (en) | 1997-07-08 |
| JPH07503761A (ja) | 1995-04-20 |
| WO1993016213A1 (de) | 1993-08-19 |
| AU3452393A (en) | 1993-09-03 |
| EP0625218A1 (de) | 1994-11-23 |
| EP0625218B1 (de) | 1996-06-26 |
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