DE4204650C1 - - Google Patents
Info
- Publication number
- DE4204650C1 DE4204650C1 DE4204650A DE4204650A DE4204650C1 DE 4204650 C1 DE4204650 C1 DE 4204650C1 DE 4204650 A DE4204650 A DE 4204650A DE 4204650 A DE4204650 A DE 4204650A DE 4204650 C1 DE4204650 C1 DE 4204650C1
- Authority
- DE
- Germany
- Prior art keywords
- ions
- ion
- energy
- plasma
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000002500 ions Chemical class 0.000 claims abstract description 163
- 238000000034 method Methods 0.000 claims abstract description 65
- 210000002381 plasma Anatomy 0.000 claims abstract description 40
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 239000012530 fluid Substances 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000012986 modification Methods 0.000 claims abstract description 10
- 239000007787 solid Substances 0.000 claims abstract description 5
- 238000013459 approach Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 46
- 238000000576 coating method Methods 0.000 claims description 44
- 239000011248 coating agent Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 20
- 230000004913 activation Effects 0.000 claims description 19
- 238000010884 ion-beam technique Methods 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 16
- 230000004048 modification Effects 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- -1 EZR ion Chemical class 0.000 claims description 3
- 230000002349 favourable effect Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 claims 1
- 239000000428 dust Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000005040 ion trap Methods 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 230000003213 activating effect Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 56
- 125000004429 atom Chemical group 0.000 description 35
- 239000000463 material Substances 0.000 description 18
- 238000001994 activation Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 238000005381 potential energy Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012634 optical imaging Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000007725 thermal activation Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000036651 mood Effects 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4204650A DE4204650C1 (enExample) | 1992-02-15 | 1992-02-15 | |
| EP93917359A EP0625218B1 (de) | 1992-02-15 | 1993-01-30 | Verfahren und vorrichtung zur oberflächenmodifikation durch physikalisch-chemische reaktionen von gasen oder dämpfen an oberflächen mit unterstützung von hochgeladenen ionen |
| US08/284,632 US5645897A (en) | 1992-02-15 | 1993-01-30 | Process and device for surface-modification by physico-chemical reactions of gases or vapors on surfaces, using highly-charged ions |
| PCT/EP1993/000214 WO1993016213A1 (de) | 1992-02-15 | 1993-01-30 | Verfahren und vorrichtung zur oberflächenmodifikation durch physikalisch-chemische reaktionen von gasen oder dämpfen an oberflächen mit unterstützung von hochgeladenen ionen |
| AU34523/93A AU3452393A (en) | 1992-02-15 | 1993-01-30 | Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions |
| JP5513725A JPH07503761A (ja) | 1992-02-15 | 1993-01-30 | 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4204650A DE4204650C1 (enExample) | 1992-02-15 | 1992-02-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4204650C1 true DE4204650C1 (enExample) | 1993-07-08 |
Family
ID=6451865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4204650A Expired - Fee Related DE4204650C1 (enExample) | 1992-02-15 | 1992-02-15 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5645897A (enExample) |
| EP (1) | EP0625218B1 (enExample) |
| JP (1) | JPH07503761A (enExample) |
| AU (1) | AU3452393A (enExample) |
| DE (1) | DE4204650C1 (enExample) |
| WO (1) | WO1993016213A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998054747A1 (fr) * | 1997-05-28 | 1998-12-03 | Universite Pierre Et Marie Curie | Dispositif et procede de gravure par ions |
| EP2061068A1 (en) * | 2007-11-13 | 2009-05-20 | Carl Zeiss NTS GmbH | System for processing an object |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976992A (en) * | 1993-09-27 | 1999-11-02 | Kabushiki Kaisha Toshiba | Method of supplying excited oxygen |
| JP3599564B2 (ja) * | 1998-06-25 | 2004-12-08 | 東京エレクトロン株式会社 | イオン流形成方法及び装置 |
| US6319566B1 (en) | 1997-11-12 | 2001-11-20 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6156393A (en) * | 1997-11-12 | 2000-12-05 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6878417B2 (en) | 1997-11-12 | 2005-04-12 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| EP1160826A3 (en) * | 2000-05-30 | 2006-12-13 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation |
| US7575924B2 (en) | 2000-11-13 | 2009-08-18 | Research Development Foundation | Methods and compositions relating to improved lentiviral vectors and their applications |
| WO2002045737A2 (en) * | 2000-12-07 | 2002-06-13 | Board Of Regents, The University Of Texas System | Methods of treatment involving human mda-7 |
| DE60224383T3 (de) | 2001-02-15 | 2012-06-28 | The University Of Chicago | Verfahren zum nachweis in hefe für mittel die proteinfaltung beeinflussen |
| DK1412493T3 (da) * | 2001-08-02 | 2012-01-09 | Inst Clayton De La Rech | Fremgangsmåder og sammensætninger der angår forbedrede lentiviral-vektor.-produktionsystemer |
| CA2462628C (en) * | 2001-10-02 | 2019-08-20 | Institut Clayton De La Recherche | Restricted expression lentiviral vectors |
| DE10149588B4 (de) * | 2001-10-08 | 2017-09-07 | Oerlikon Trading Ag, Trübbach | Verfahren zur Diamantbeschichtung von Substraten |
| CA2466133A1 (en) * | 2001-11-02 | 2003-05-15 | Rice University | Recycling system for manipulation of intracellular nadh availability |
| EP1572902B1 (en) | 2002-02-01 | 2014-06-11 | Life Technologies Corporation | HIGH POTENCY siRNAS FOR REDUCING THE EXPRESSION OF TARGET GENES |
| US20060009409A1 (en) | 2002-02-01 | 2006-01-12 | Woolf Tod M | Double-stranded oligonucleotides |
| JP4527984B2 (ja) | 2002-02-01 | 2010-08-18 | ライフ テクノロジーズ コーポレーション | 増強された効力を有するオリゴヌクレオチド組成物 |
| US20030157269A1 (en) * | 2002-02-20 | 2003-08-21 | University Of Washington | Method and apparatus for precision coating of molecules on the surfaces of materials and devices |
| DE10208043B4 (de) * | 2002-02-25 | 2011-01-13 | Carl Zeiss Nts Gmbh | Materialbearbeitungssystem und Materialbearbeitungsverfahren |
| US20050103272A1 (en) * | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
| CA2477780A1 (en) * | 2002-03-05 | 2003-09-18 | Board Of Regents, The University Of Texas System | Methods of enhancing immune induction involving mda-7 |
| US7052840B2 (en) * | 2002-04-03 | 2006-05-30 | Capitol Genomix, Inc. | Reversible association of nucleic acid with a carboxylated substrate |
| AU2003226598A1 (en) * | 2002-04-26 | 2003-11-10 | Institut Clayton De La Recherche | Improved chimeric glycoproteins and pseudotyped lentiviral vectors |
| US7465362B2 (en) | 2002-05-08 | 2008-12-16 | Btu International, Inc. | Plasma-assisted nitrogen surface-treatment |
| US7445817B2 (en) | 2002-05-08 | 2008-11-04 | Btu International Inc. | Plasma-assisted formation of carbon structures |
| US7214280B2 (en) | 2002-05-08 | 2007-05-08 | Btu International Inc. | Plasma-assisted decrystallization |
| US7498066B2 (en) | 2002-05-08 | 2009-03-03 | Btu International Inc. | Plasma-assisted enhanced coating |
| US7494904B2 (en) | 2002-05-08 | 2009-02-24 | Btu International, Inc. | Plasma-assisted doping |
| US7638727B2 (en) | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
| US7432470B2 (en) | 2002-05-08 | 2008-10-07 | Btu International, Inc. | Surface cleaning and sterilization |
| US7497922B2 (en) | 2002-05-08 | 2009-03-03 | Btu International, Inc. | Plasma-assisted gas production |
| US7560657B2 (en) | 2002-05-08 | 2009-07-14 | Btu International Inc. | Plasma-assisted processing in a manufacturing line |
| US20040248094A1 (en) * | 2002-06-12 | 2004-12-09 | Ford Lance P. | Methods and compositions relating to labeled RNA molecules that reduce gene expression |
| EP1532271A4 (en) * | 2002-06-12 | 2006-10-18 | Ambion Inc | METHODS AND COMPOSITIONS RELATED TO POLYPEPTIDES WITH RNASE III DOMAINS THAT TRANSFER RNA INTERFERENCE |
| US20100075423A1 (en) * | 2002-06-12 | 2010-03-25 | Life Technologies Corporation | Methods and compositions relating to polypeptides with rnase iii domains that mediate rna interference |
| CN1759182A (zh) * | 2002-11-22 | 2006-04-12 | 克雷顿研究院 | 调节基因的组合物和系统 |
| US7189940B2 (en) | 2002-12-04 | 2007-03-13 | Btu International Inc. | Plasma-assisted melting |
| EP1638587A4 (en) | 2003-02-14 | 2007-04-18 | Univ Missouri | RECIPROCAL PROCEDURES AND COMPOSITIONS CONCERNING PROTEASOMAL INTERFERENCE |
| JP2006523227A (ja) * | 2003-03-03 | 2006-10-12 | ボード オブ リージェンツ ザ ユニバーシティー オブ テキサス システム | Ｍｄａ−７を含む方法および組成物 |
| CA2548220A1 (en) * | 2003-12-01 | 2005-09-09 | Introgen Therapeutics, Inc. | Use of mda-7 to inhibit infection by pathogenic organisms |
| US20070281041A1 (en) * | 2004-03-02 | 2007-12-06 | Introgen Therapeutics, Inc. | Compositions and Methods Involving MDA-7 for the Treatment of Cancer |
| US7888010B2 (en) | 2004-05-28 | 2011-02-15 | Asuragen, Inc. | Methods and compositions involving microRNA |
| CA2581086C (en) | 2004-09-14 | 2023-11-07 | The Regents Of The University Of Colorado, A Body Corporate | Method for treatment with bucindolol based on genetic targeting |
| EP2808389A1 (en) | 2004-11-12 | 2014-12-03 | Asuragen, Inc. | Methods and compositions involving MIRNA and MIRNA inhibitor molecules |
| KR20060055681A (ko) * | 2004-11-18 | 2006-05-24 | 삼성전자주식회사 | 이온빔 보조 스퍼터링 증착장치 |
| US20060142228A1 (en) * | 2004-12-23 | 2006-06-29 | Ambion, Inc. | Methods and compositions concerning siRNA's as mediators of RNA interference |
| WO2006086798A2 (en) * | 2005-02-08 | 2006-08-17 | Board Of Regents, The University Of Texas System | Compositions and methods involving mda-7 for the treatment of cancer |
| EP1871913A2 (en) | 2005-03-25 | 2008-01-02 | Ambion, Inc. | Methods and compositions for depleting abundant rna transcripts |
| WO2007092944A2 (en) * | 2006-02-08 | 2007-08-16 | Introgen Therapeutics, Inc. | Compositions and methods involving gene therapy and proteasome modulation |
| JP5520605B2 (ja) | 2006-09-19 | 2014-06-11 | アシュラジェン インコーポレイテッド | 膵臓疾患で差次的に発現されるマイクロｒｎａおよびその使用 |
| JP5677703B2 (ja) | 2008-01-10 | 2015-02-25 | リサーチ ディベロップメント ファウンデーション | Ｅｈｒｌｉｃｈｉａｃｈａｆｆｅｅｎｓｉｓにのためのワクチンおよび診断 |
| BRPI0907637A8 (pt) | 2008-01-25 | 2018-01-02 | P53 Inc | biomarcadores p53 |
| CA2652130A1 (en) * | 2008-01-30 | 2009-07-30 | John C. Polanyi | Method of linear patterning at surfaces |
| EP2990487A1 (en) | 2008-05-08 | 2016-03-02 | Asuragen, INC. | Compositions and methods related to mirna modulation of neovascularization or angiogenesis |
| CN102272157B (zh) | 2008-11-07 | 2015-11-25 | 研究发展基金会 | 用于抑制cripto/grp78复合物形成和信号的组合物和方法 |
| JP5651125B2 (ja) | 2008-12-10 | 2015-01-07 | デイナ ファーバー キャンサー インスティチュート，インコーポレイテッド | Ｍｅｋ阻害剤に対する耐性を付与するｍｅｋ突然変異 |
| US20110045080A1 (en) * | 2009-03-24 | 2011-02-24 | William Marsh Rice University | Single-Walled Carbon Nanotube/Bioactive Substance Complexes and Methods Related Thereto |
| JP5785942B2 (ja) | 2009-06-29 | 2015-09-30 | ルミネックス コーポレーション | ヘアピンコンフォメーションを有するキメラプライマーおよびその使用法 |
| US20120238509A1 (en) | 2009-08-28 | 2012-09-20 | Research Development Foundation | Urocortin 2 analogs and uses thereof |
| WO2011032088A1 (en) | 2009-09-11 | 2011-03-17 | Arca Biopharma, Inc. | Polymorphisms in the pde3a gene |
| CA2822747A1 (en) | 2009-12-23 | 2011-06-30 | Arca Biopharma, Inc. | Use of s-(6-nitro-oxi-hexahydro-furo[3,2-b]thioacetate in the treatment of cardiovascular disorders associated with oxide synthase dysfunction |
| ES2576061T3 (es) | 2010-02-25 | 2016-07-05 | Dana-Farber Cancer Institute, Inc. | Mutaciones de BRAF que confieren resistencia a inhibidores de BRAF |
| WO2011108930A1 (en) | 2010-03-04 | 2011-09-09 | Interna Technologies Bv | A MiRNA MOLECULE DEFINED BY ITS SOURCE AND ITS DIAGNOSTIC AND THERAPEUTIC USES IN DISEASES OR CONDITIONS ASSOCIATED WITH EMT |
| EP2580322B1 (en) | 2010-06-09 | 2018-01-10 | Dana-Farber Cancer Institute, Inc. | A mek 1 mutation conferring resistance to raf and mek inhibitors |
| WO2012005572A1 (en) | 2010-07-06 | 2012-01-12 | Interna Technologies Bv | Mirna and its diagnostic and therapeutic uses in diseases or conditions associated with melanoma, or in diseases or conditions associated with activated braf pathway |
| US10150999B2 (en) | 2010-11-17 | 2018-12-11 | Interpace Diagnostics, Llc | miRNAs as biomarkers for distinguishing benign from malignant thyroid neoplasms |
| EP2474617A1 (en) | 2011-01-11 | 2012-07-11 | InteRNA Technologies BV | Mir for treating neo-angiogenesis |
| CN103476931A (zh) | 2011-02-03 | 2013-12-25 | 米尔纳医疗股份有限公司 | Mir-34的合成模拟物 |
| CN103459598B (zh) | 2011-02-03 | 2016-08-10 | 米尔纳医疗股份有限公司 | Mir-124的合成模拟物 |
| US9644241B2 (en) | 2011-09-13 | 2017-05-09 | Interpace Diagnostics, Llc | Methods and compositions involving miR-135B for distinguishing pancreatic cancer from benign pancreatic disease |
| US20130157884A1 (en) | 2011-10-26 | 2013-06-20 | Asuragen, Inc. | Methods and compositions involving mirna expression levels for distinguishing pancreatic cysts |
| EP3369818B1 (en) | 2011-12-22 | 2021-06-09 | InteRNA Technologies B.V. | Mirna for treating head and neck cancer |
| US9169567B2 (en) | 2012-03-30 | 2015-10-27 | General Electric Company | Components having tab members |
| US9587632B2 (en) | 2012-03-30 | 2017-03-07 | General Electric Company | Thermally-controlled component and thermal control process |
| US9671030B2 (en) | 2012-03-30 | 2017-06-06 | General Electric Company | Metallic seal assembly, turbine component, and method of regulating airflow in turbo-machinery |
| US9993522B2 (en) | 2012-09-18 | 2018-06-12 | Uti Limited Partnership | Treatment of pain by inhibition of USP5 de-ubiquitinase |
| US20140100124A1 (en) | 2012-10-04 | 2014-04-10 | Asuragen, Inc. | Diagnostic mirnas for differential diagnosis of incidental pancreatic cystic lesions |
| EP3800256A1 (en) | 2012-11-06 | 2021-04-07 | InteRNA Technologies B.V. | Combination to be used in therapeutic use against diseases or conditions associated with melanoma, or in diseases or conditions associated with activated b-raf pathway |
| WO2014116721A1 (en) | 2013-01-22 | 2014-07-31 | The Arizona Board Of Regents For And On Behalf Of Arizona State University | Geminiviral vector for expression of rituximab |
| WO2014134179A1 (en) | 2013-02-28 | 2014-09-04 | The Board Of Regents Of The University Of Texas System | Methods for classifying a cancer as susceptible to tmepai-directed therapies and treating such cancers |
| ES2935257T3 (es) | 2013-03-15 | 2023-03-03 | Univ Chicago | Métodos y composiciones relacionadas con la actividad de las células T |
| CA2929555A1 (en) | 2013-11-08 | 2015-05-14 | Baylor Research Institute | Nuclear localization of glp-1 stimulates myocardial regeneration and reverses heart failure |
| WO2016134293A1 (en) | 2015-02-20 | 2016-08-25 | Baylor College Of Medicine | p63 INACTIVATION FOR THE TREATMENT OF HEART FAILURE |
| CA3004530A1 (en) | 2015-11-07 | 2017-05-11 | Multivir Inc. | Methods and compositions comprising tumor suppressor gene therapy and immune checkpoint blockade for the treatment of cancer |
| EP3436049B1 (en) | 2016-03-31 | 2022-01-12 | Baylor Research Institute | Angiopoietin-like protein 8 (angptl8) |
| JP7099967B2 (ja) | 2016-07-01 | 2022-07-12 | リサーチ ディベロップメント ファウンデーション | 幹細胞由来移植片からの増殖性細胞の排除 |
| CN110381997A (zh) | 2016-12-12 | 2019-10-25 | 茂体外尔公司 | 用于治疗和预防癌症和感染性疾病的包含病毒基因治疗和免疫检查点抑制剂的方法和组合物 |
| WO2019086603A1 (en) | 2017-11-03 | 2019-05-09 | Interna Technologies B.V. | Mirna molecule, equivalent, antagomir, or source thereof for treating and/or diagnosing a condition and/or a disease associated with neuronal deficiency or for neuronal (re)generation |
| AU2019322487B2 (en) | 2018-03-19 | 2024-04-18 | Multivir Inc. | Methods and compositions comprising tumor suppressor gene therapy and CD122/CD132 agonists for the treatment of cancer |
| EP3691635B1 (en) | 2018-05-25 | 2023-07-05 | Arca Biopharma, Inc. | Methods and compositions involving bucindolol for the treatment of atrial fibrillation |
| CN112146967A (zh) * | 2019-06-28 | 2020-12-29 | Fei 公司 | 用于制备和递送用于带电粒子分析的生物样品的系统和方法 |
| WO2021113644A1 (en) | 2019-12-05 | 2021-06-10 | Multivir Inc. | Combinations comprising a cd8+ t cell enhancer, an immune checkpoint inhibitor and radiotherapy for targeted and abscopal effects for the treatment of cancer |
| WO2022217283A1 (en) | 2021-04-08 | 2022-10-13 | Joslin Diabetes Center, Inc. | Methods of diagnosing and predicting renal decline |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4281030A (en) * | 1980-05-12 | 1981-07-28 | Bell Telephone Laboratories, Incorporated | Implantation of vaporized material on melted substrates |
| US4297387A (en) * | 1980-06-04 | 1981-10-27 | Battelle Development Corporation | Cubic boron nitride preparation |
| US4452679A (en) * | 1981-10-07 | 1984-06-05 | Becton Dickinson And Company | Substrate with chemically modified surface and method of manufacture thereof |
| IL71530A (en) * | 1984-04-12 | 1987-09-16 | Univ Ramot | Method and apparatus for surface-treating workpieces |
| JPS60221566A (ja) * | 1984-04-18 | 1985-11-06 | Agency Of Ind Science & Technol | 薄膜形成装置 |
| JPS60225422A (ja) * | 1984-04-24 | 1985-11-09 | Hitachi Ltd | 薄膜形成方法およびその装置 |
| US4670064A (en) * | 1985-04-10 | 1987-06-02 | Eaton Corporation | Generating high purity ions by non-thermal excimer laser processing |
| JPH0658909B2 (ja) * | 1985-07-15 | 1994-08-03 | 株式会社日立製作所 | 低温プラズマによる成膜方法及び装置 |
| US4734158A (en) * | 1987-03-16 | 1988-03-29 | Hughes Aircraft Company | Molecular beam etching system and method |
| US4800100A (en) * | 1987-10-27 | 1989-01-24 | Massachusetts Institute Of Technology | Combined ion and molecular beam apparatus and method for depositing materials |
| US4987007A (en) * | 1988-04-18 | 1991-01-22 | Board Of Regents, The University Of Texas System | Method and apparatus for producing a layer of material from a laser ion source |
| US4992298A (en) * | 1988-10-11 | 1991-02-12 | Beamalloy Corporation | Dual ion beam ballistic alloying process |
| US5104634A (en) * | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
| JPH03111578A (ja) * | 1989-06-29 | 1991-05-13 | Toshiba Corp | 薄膜形成方法及び薄膜形成装置 |
| US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
| US5534311A (en) * | 1995-05-31 | 1996-07-09 | The United States Of America As Represented By The Secretary Of The Navy | Production of structures by electrostatically-focused deposition |
-
1992
- 1992-02-15 DE DE4204650A patent/DE4204650C1/de not_active Expired - Fee Related
-
1993
- 1993-01-30 US US08/284,632 patent/US5645897A/en not_active Expired - Fee Related
- 1993-01-30 AU AU34523/93A patent/AU3452393A/en not_active Abandoned
- 1993-01-30 JP JP5513725A patent/JPH07503761A/ja active Pending
- 1993-01-30 WO PCT/EP1993/000214 patent/WO1993016213A1/de not_active Ceased
- 1993-01-30 EP EP93917359A patent/EP0625218B1/de not_active Expired - Lifetime
Non-Patent Citations (4)
| Title |
|---|
| Comtes rendus des travaux du "8 eme Colloque International sur les ProcEdEs Plasma", Le Vide les Couches Minces, Supplement 25 G, 1991 * |
| J.M.E. Harper "Low Energy Ion Beam and Plasma Modification of Materials", Symposium Proceedings of the Materials Research Society Pittsburgh, USA, 1991 * |
| R.A. Haefer, Oberflächen- und Dünnschicht- Technologie, Teil 2, Reihe Werkstoff- Forschung und Technik, Bd. 6, Springer Verlag, 1991 * |
| Surface Science Bd. 251/252, (1991), S. 696-700 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998054747A1 (fr) * | 1997-05-28 | 1998-12-03 | Universite Pierre Et Marie Curie | Dispositif et procede de gravure par ions |
| FR2764110A1 (fr) * | 1997-05-28 | 1998-12-04 | Univ Paris Curie | Dispositif et procede de gravure par ions |
| EP2061068A1 (en) * | 2007-11-13 | 2009-05-20 | Carl Zeiss NTS GmbH | System for processing an object |
| US8008639B2 (en) | 2007-11-13 | 2011-08-30 | Carl Zeiss Nts Gmbh | System for processing an object |
Also Published As
| Publication number | Publication date |
|---|---|
| US5645897A (en) | 1997-07-08 |
| EP0625218A1 (de) | 1994-11-23 |
| EP0625218B1 (de) | 1996-06-26 |
| WO1993016213A1 (de) | 1993-08-19 |
| JPH07503761A (ja) | 1995-04-20 |
| AU3452393A (en) | 1993-09-03 |
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