AU3452393A - Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions - Google Patents
Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ionsInfo
- Publication number
- AU3452393A AU3452393A AU34523/93A AU3452393A AU3452393A AU 3452393 A AU3452393 A AU 3452393A AU 34523/93 A AU34523/93 A AU 34523/93A AU 3452393 A AU3452393 A AU 3452393A AU 3452393 A AU3452393 A AU 3452393A
- Authority
- AU
- Australia
- Prior art keywords
- vapours
- physico
- gases
- highly
- modification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 239000007789 gas Substances 0.000 title 1
- 150000002500 ions Chemical class 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000012986 modification Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4204650A DE4204650C1 (enExample) | 1992-02-15 | 1992-02-15 | |
| DE4204650 | 1992-02-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU3452393A true AU3452393A (en) | 1993-09-03 |
Family
ID=6451865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU34523/93A Abandoned AU3452393A (en) | 1992-02-15 | 1993-01-30 | Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5645897A (enExample) |
| EP (1) | EP0625218B1 (enExample) |
| JP (1) | JPH07503761A (enExample) |
| AU (1) | AU3452393A (enExample) |
| DE (1) | DE4204650C1 (enExample) |
| WO (1) | WO1993016213A1 (enExample) |
Families Citing this family (94)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0168699B1 (ko) * | 1993-09-27 | 1999-02-01 | 사토 후미오 | 여기산소 또는 여기가스의 생성방법 및 공급방법 |
| FR2764110B1 (fr) * | 1997-05-28 | 1999-08-20 | Univ Paris Curie | Dispositif et procede de gravure par ions |
| JP3599564B2 (ja) * | 1998-06-25 | 2004-12-08 | 東京エレクトロン株式会社 | イオン流形成方法及び装置 |
| US6156393A (en) * | 1997-11-12 | 2000-12-05 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6878417B2 (en) | 1997-11-12 | 2005-04-12 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6319566B1 (en) | 1997-11-12 | 2001-11-20 | John C. Polanyi | Method of molecular-scale pattern imprinting at surfaces |
| US6921722B2 (en) * | 2000-05-30 | 2005-07-26 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation of the same |
| US7575924B2 (en) | 2000-11-13 | 2009-08-18 | Research Development Foundation | Methods and compositions relating to improved lentiviral vectors and their applications |
| AU2002220257A1 (en) * | 2000-12-07 | 2002-06-18 | Board Of Regents, The University Of Texas System | Methods of treatment involving human mda-7 |
| US7045290B2 (en) | 2001-02-15 | 2006-05-16 | The University Of Chicago | Yeast screens for treatment of human disease |
| ATE527347T1 (de) | 2001-08-02 | 2011-10-15 | Inst Clayton De La Rech | Verfahren und zusammensetzungen im zusammenhang mit verbesserten lentivirusvektor- produktionssystemen |
| CA2462628C (en) * | 2001-10-02 | 2019-08-20 | Institut Clayton De La Recherche | Restricted expression lentiviral vectors |
| DE10149588B4 (de) * | 2001-10-08 | 2017-09-07 | Oerlikon Trading Ag, Trübbach | Verfahren zur Diamantbeschichtung von Substraten |
| CA2466133A1 (en) * | 2001-11-02 | 2003-05-15 | Rice University | Recycling system for manipulation of intracellular nadh availability |
| US20030166282A1 (en) * | 2002-02-01 | 2003-09-04 | David Brown | High potency siRNAS for reducing the expression of target genes |
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| US20060009409A1 (en) | 2002-02-01 | 2006-01-12 | Woolf Tod M | Double-stranded oligonucleotides |
| US20030157269A1 (en) * | 2002-02-20 | 2003-08-21 | University Of Washington | Method and apparatus for precision coating of molecules on the surfaces of materials and devices |
| US20050103272A1 (en) * | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
| DE10208043B4 (de) * | 2002-02-25 | 2011-01-13 | Carl Zeiss Nts Gmbh | Materialbearbeitungssystem und Materialbearbeitungsverfahren |
| US20040009939A1 (en) * | 2002-03-05 | 2004-01-15 | Board Of Regent, The University Of Texas System | Methods of enhancing immune induction involving MDA-7 |
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| KR101002955B1 (ko) * | 2002-04-26 | 2010-12-21 | 인스티튜트 클레이톤 드 라 리쎄르셰 | 개선된 키메라 당단백질 및 슈도타입 렌티바이러스 벡터 |
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| US7465362B2 (en) | 2002-05-08 | 2008-12-16 | Btu International, Inc. | Plasma-assisted nitrogen surface-treatment |
| US7432470B2 (en) | 2002-05-08 | 2008-10-07 | Btu International, Inc. | Surface cleaning and sterilization |
| JP2005524963A (ja) | 2002-05-08 | 2005-08-18 | ダナ・コーポレーション | プラズマ触媒 |
| US7498066B2 (en) | 2002-05-08 | 2009-03-03 | Btu International Inc. | Plasma-assisted enhanced coating |
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| CA2506798C (en) * | 2002-11-22 | 2013-01-22 | Institut Clayton De La Recherche | Compositions and systems for the regulation of genes |
| US7189940B2 (en) | 2002-12-04 | 2007-03-13 | Btu International Inc. | Plasma-assisted melting |
| EP2241330A1 (en) | 2003-02-14 | 2010-10-20 | The Curators Of The University Of Missouri | Contraceptive methods and compositions related to proteasomal interference |
| EP1603943A2 (en) * | 2003-03-03 | 2005-12-14 | Board of Regents, The University of Texas System | Methods and compositions involving mda-7 |
| US8034790B2 (en) * | 2003-12-01 | 2011-10-11 | Introgen Therapeutics | Use of MDA-7 to inhibit pathogenic infectious organisms |
| US20070281041A1 (en) * | 2004-03-02 | 2007-12-06 | Introgen Therapeutics, Inc. | Compositions and Methods Involving MDA-7 for the Treatment of Cancer |
| EP2471924A1 (en) | 2004-05-28 | 2012-07-04 | Asuragen, INC. | Methods and compositions involving microRNA |
| CN104644627A (zh) | 2004-09-14 | 2015-05-27 | 科罗拉多大学董事会 | 基于基因靶向使用布新洛尔的治疗方法 |
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| EP2245464B1 (en) | 2008-01-25 | 2016-12-14 | MultiVir Inc. | P53 biomarkers |
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| US8258111B2 (en) | 2008-05-08 | 2012-09-04 | The Johns Hopkins University | Compositions and methods related to miRNA modulation of neovascularization or angiogenesis |
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| EP2961853B1 (en) | 2013-02-28 | 2018-09-19 | The Board of Regents of The University of Texas System | Methods for classifying a cancer as susceptible to tmepai-directed therapies and treating such cancers |
| ES2935257T3 (es) | 2013-03-15 | 2023-03-03 | Univ Chicago | Métodos y composiciones relacionadas con la actividad de las células T |
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| WO2016134293A1 (en) | 2015-02-20 | 2016-08-25 | Baylor College Of Medicine | p63 INACTIVATION FOR THE TREATMENT OF HEART FAILURE |
| US20190038713A1 (en) | 2015-11-07 | 2019-02-07 | Multivir Inc. | Compositions comprising tumor suppressor gene therapy and immune checkpoint blockade for the treatment of cancer |
| CA3019635A1 (en) | 2016-03-31 | 2017-10-05 | Baylor Research Institute | Angiopoietin-like protein 8 (angptl8) |
| AU2017290805B2 (en) | 2016-07-01 | 2023-11-16 | Research Development Foundation | Elimination of proliferating cells from stem cell-derived grafts |
| WO2018111902A1 (en) | 2016-12-12 | 2018-06-21 | Multivir Inc. | Methods and compositions comprising viral gene therapy and an immune checkpoint inhibitor for treatment and prevention of cancer and infectious diseases |
| AU2018358016A1 (en) | 2017-11-03 | 2020-05-07 | Interna Technologies B.V. | MiRNA molecule, equivalent, antagomir, or source thereof for treating and/or diagnosing a condition and/or a disease associated with neuronal deficiency or for neuronal (re)generation |
| CA3094329A1 (en) | 2018-03-19 | 2020-02-20 | Multivir Inc. | Methods and compositions comprising tumor suppressor gene therapy and cd122/cd132 agonists for the treatment of cancer |
| MX2020012717A (es) | 2018-05-25 | 2021-07-15 | Arca Biopharma Inc | Métodos y composiciones con bucindolol para el tratamiento de la fibrilación auricular. |
| CN112146967A (zh) * | 2019-06-28 | 2020-12-29 | Fei 公司 | 用于制备和递送用于带电粒子分析的生物样品的系统和方法 |
| WO2021113644A1 (en) | 2019-12-05 | 2021-06-10 | Multivir Inc. | Combinations comprising a cd8+ t cell enhancer, an immune checkpoint inhibitor and radiotherapy for targeted and abscopal effects for the treatment of cancer |
| CA3214688A1 (en) | 2021-04-08 | 2022-10-13 | Andrzej KROLEWSKI | Methods of diagnosing and predicting renal decline |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4281030A (en) * | 1980-05-12 | 1981-07-28 | Bell Telephone Laboratories, Incorporated | Implantation of vaporized material on melted substrates |
| US4297387A (en) * | 1980-06-04 | 1981-10-27 | Battelle Development Corporation | Cubic boron nitride preparation |
| US4452679A (en) * | 1981-10-07 | 1984-06-05 | Becton Dickinson And Company | Substrate with chemically modified surface and method of manufacture thereof |
| IL71530A (en) * | 1984-04-12 | 1987-09-16 | Univ Ramot | Method and apparatus for surface-treating workpieces |
| JPS60221566A (ja) * | 1984-04-18 | 1985-11-06 | Agency Of Ind Science & Technol | 薄膜形成装置 |
| JPS60225422A (ja) * | 1984-04-24 | 1985-11-09 | Hitachi Ltd | 薄膜形成方法およびその装置 |
| US4670064A (en) * | 1985-04-10 | 1987-06-02 | Eaton Corporation | Generating high purity ions by non-thermal excimer laser processing |
| JPH0658909B2 (ja) * | 1985-07-15 | 1994-08-03 | 株式会社日立製作所 | 低温プラズマによる成膜方法及び装置 |
| US4734158A (en) * | 1987-03-16 | 1988-03-29 | Hughes Aircraft Company | Molecular beam etching system and method |
| US4800100A (en) * | 1987-10-27 | 1989-01-24 | Massachusetts Institute Of Technology | Combined ion and molecular beam apparatus and method for depositing materials |
| US4987007A (en) * | 1988-04-18 | 1991-01-22 | Board Of Regents, The University Of Texas System | Method and apparatus for producing a layer of material from a laser ion source |
| US4992298A (en) * | 1988-10-11 | 1991-02-12 | Beamalloy Corporation | Dual ion beam ballistic alloying process |
| US5104634A (en) * | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
| JPH03111578A (ja) * | 1989-06-29 | 1991-05-13 | Toshiba Corp | 薄膜形成方法及び薄膜形成装置 |
| US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
| US5534311A (en) * | 1995-05-31 | 1996-07-09 | The United States Of America As Represented By The Secretary Of The Navy | Production of structures by electrostatically-focused deposition |
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1993
- 1993-01-30 JP JP5513725A patent/JPH07503761A/ja active Pending
- 1993-01-30 EP EP93917359A patent/EP0625218B1/de not_active Expired - Lifetime
- 1993-01-30 AU AU34523/93A patent/AU3452393A/en not_active Abandoned
- 1993-01-30 US US08/284,632 patent/US5645897A/en not_active Expired - Fee Related
- 1993-01-30 WO PCT/EP1993/000214 patent/WO1993016213A1/de not_active Ceased
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|---|---|
| US5645897A (en) | 1997-07-08 |
| EP0625218A1 (de) | 1994-11-23 |
| EP0625218B1 (de) | 1996-06-26 |
| DE4204650C1 (enExample) | 1993-07-08 |
| WO1993016213A1 (de) | 1993-08-19 |
| JPH07503761A (ja) | 1995-04-20 |
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