JPH07503554A - フォトリソグラフィのための改善されたマスク - Google Patents
フォトリソグラフィのための改善されたマスクInfo
- Publication number
- JPH07503554A JPH07503554A JP5512707A JP51270793A JPH07503554A JP H07503554 A JPH07503554 A JP H07503554A JP 5512707 A JP5512707 A JP 5512707A JP 51270793 A JP51270793 A JP 51270793A JP H07503554 A JPH07503554 A JP H07503554A
- Authority
- JP
- Japan
- Prior art keywords
- edge
- improvement
- mask
- edges
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polysaccharides And Polysaccharide Derivatives (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Compositions (AREA)
Abstract
Description
Claims (18)
- 1.集積回路(IC)に対応してリソグラフィパターンをマスクから半導体基盤 に光学的に転写するための改善されたマスクであって、前記パターンは少なくと も1つのエッジを有する少なくとも1つの部位を含み、少なくとも1つの追加線 を備え、前記少なくとも1つの迫加線は、前記少なくとも1つのエッジに対応す ると共に、前記少なくとも1つのエッジから所定距離離れて前記マスク上に位置 し、前記少なくとも1つの追加線は、前記少なくとも1つのエッジのエッジ強度 勾配を変化させることを特徴とするマスク。
- 2.請求項1の改善において、前記少なくとも1つの追加線は前記基盤に転写さ れないように十分細い幅を有する。
- 3.請求項2の改善において、前記少なくとも1つの部位は最小寸法を有し、前 記幅は前記寸法の1/2未満である。
- 4.請求項3の改善において、前記幅は前記寸法のほぼ1/5である。
- 5.請求項4の改善において、前記所定の距離は前記最小寸法にほぼ等しい。
- 6.請求項4の改善において、前記所定の距離は前記最小寸法の1.1倍にほぼ 等しい。
- 7.集積回路(IC)に対応してリソグラフィパターンをマスクから半導体基盤 に光学的に転写するための改善されたマスクであって、前記パターンは各々が関 連するエッジを有する部位を含み、前記エッジの第1の部分は光の回折のために パターンに依存する変化を生じるようにお互いに隣接して配置され、前記エッジ の第2の部分は前記部位のとんな他のエッジからも比較的離れており、複数の追 加線を備え、前記追加線の各々は、前記第2の部分の前記エッジの1つに対応し 、前記第2の部分の前記エッジの1つから所定距離離れて前記マスクに配置され 、前記追加線は、前記エッジの前記第2の部分のエッジ強度勾配を前記エッジの 前記第1の部分のエッジ強度勾配に近づけるように変化させることを特徴とする マスク。
- 8.請求項7の改善において、前記の追加線は前記基盤に転写されないように十 分細い幅を有する。
- 9.請求項8の改善において、前記部位は最小寸法を有し、前記幅は前記寸法の 1/2未満である。
- 10.請求項9の改善において、前記幅は前記寸法のほぼ1/5である。
- 11.請求項10の改善において、前記所定の距離は前記最小寸法にほぼ等しい 。
- 12.請求項10の改善において、前記所定の距離は前記最小寸法の1.1倍に ほぼ等しい。
- 13.集積回路(IC)に対応してマスクから表面にリソグラフィでパターンを 転写するための改善されたマスクであって、前記パターンは各々が関連するエッ ジを有する部位を含み、前記エッジの第1の部分は光の回折のためにパターンに 依存する変化を生じるようにお互いに隣接して配置され、前記エッジの第2の部 分は前記部位のとんな他のエッジからも比較的離れており、複数の迫加線を備え 、前記追加線の各々は、前記第2の部分の前記エッジの1つに対応し、前記第2 の部分の前記エッジの1つから所定距離離れて前記マスクに配置され、前記追加 線は、前記エッジの前記第2の部分のエッジ強度勾配を前記エッジの前記第1の 部分のエッジ強度勾配に近づけるように変化させることを特徴とするマスク。
- 14.請求項13の改善において、前記の追加線は前記基盤に転写されないよう に十分細い幅を有する。
- 15.請求項14の改善において、前記部位は最小寸法を有し、前記幅は前記寸 法の1/2未満である。
- 16.請求項15の改善において、前記幅は前記寸法のほぼ1/5である。
- 17.請求項16の改善において、前記所定の距離は前記最小寸法にほぼ等しい 。
- 18.請求項16の改善において、前記所定の距離は前記最小寸法の1.1倍に ほぼ等しい。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/821,793 US5242770A (en) | 1992-01-16 | 1992-01-16 | Mask for photolithography |
US821,793 | 1992-01-16 | ||
PCT/US1993/000456 WO1993014445A1 (en) | 1992-01-16 | 1993-01-15 | Improved mask for photolithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07503554A true JPH07503554A (ja) | 1995-04-13 |
JP3009923B2 JP3009923B2 (ja) | 2000-02-14 |
Family
ID=25234329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05512707A Expired - Fee Related JP3009923B2 (ja) | 1992-01-16 | 1993-01-15 | フォトリソグラフィのための改善されたマスク |
Country Status (9)
Country | Link |
---|---|
US (1) | US5242770A (ja) |
EP (1) | EP0620931B1 (ja) |
JP (1) | JP3009923B2 (ja) |
KR (1) | KR100216143B1 (ja) |
AT (1) | ATE178998T1 (ja) |
AU (1) | AU3478793A (ja) |
CA (1) | CA2124077A1 (ja) |
DE (1) | DE69324473T2 (ja) |
WO (1) | WO1993014445A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004354605A (ja) * | 2003-05-28 | 2004-12-16 | Matsushita Electric Ind Co Ltd | 半導体設計レイアウトパタン生成方法および図形パタン生成装置 |
US7691543B2 (en) | 2005-05-02 | 2010-04-06 | Elpida Memory, Inc. | Mask data creation method |
JP2012181298A (ja) * | 2011-03-01 | 2012-09-20 | Dainippon Printing Co Ltd | マスクパターンの補正方法、プログラム及び該補正方法を用いたフォトマスク |
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1992
- 1992-01-16 US US07/821,793 patent/US5242770A/en not_active Expired - Lifetime
-
1993
- 1993-01-15 KR KR1019940702338A patent/KR100216143B1/ko not_active IP Right Cessation
- 1993-01-15 EP EP93903571A patent/EP0620931B1/en not_active Expired - Lifetime
- 1993-01-15 WO PCT/US1993/000456 patent/WO1993014445A1/en active IP Right Grant
- 1993-01-15 DE DE69324473T patent/DE69324473T2/de not_active Expired - Lifetime
- 1993-01-15 AU AU34787/93A patent/AU3478793A/en not_active Abandoned
- 1993-01-15 CA CA002124077A patent/CA2124077A1/en not_active Abandoned
- 1993-01-15 AT AT93903571T patent/ATE178998T1/de not_active IP Right Cessation
- 1993-01-15 JP JP05512707A patent/JP3009923B2/ja not_active Expired - Fee Related
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JP2004354605A (ja) * | 2003-05-28 | 2004-12-16 | Matsushita Electric Ind Co Ltd | 半導体設計レイアウトパタン生成方法および図形パタン生成装置 |
US7691543B2 (en) | 2005-05-02 | 2010-04-06 | Elpida Memory, Inc. | Mask data creation method |
JP2012181298A (ja) * | 2011-03-01 | 2012-09-20 | Dainippon Printing Co Ltd | マスクパターンの補正方法、プログラム及び該補正方法を用いたフォトマスク |
Also Published As
Publication number | Publication date |
---|---|
ATE178998T1 (de) | 1999-04-15 |
DE69324473T2 (de) | 1999-11-25 |
AU3478793A (en) | 1993-08-03 |
DE69324473D1 (en) | 1999-05-20 |
CA2124077A1 (en) | 1993-07-22 |
US5242770A (en) | 1993-09-07 |
EP0620931A1 (en) | 1994-10-26 |
WO1993014445A1 (en) | 1993-07-22 |
KR100216143B1 (ko) | 1999-08-16 |
EP0620931A4 (en) | 1996-05-08 |
KR940704016A (ko) | 1994-12-12 |
EP0620931B1 (en) | 1999-04-14 |
JP3009923B2 (ja) | 2000-02-14 |
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