JPH07307394A - 拡大ドレインｒｅｓｕｒｆ横ｄｍｏｓ装置 - Google Patents

拡大ドレインｒｅｓｕｒｆ横ｄｍｏｓ装置

Info

Publication number
JPH07307394A
JPH07307394A JP7120340A JP12034095A JPH07307394A JP H07307394 A JPH07307394 A JP H07307394A JP 7120340 A JP7120340 A JP 7120340A JP 12034095 A JP12034095 A JP 12034095A JP H07307394 A JPH07307394 A JP H07307394A
Authority
JP
Japan
Prior art keywords
well
voltage
type
high voltage
drift region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7120340A
Other languages
English (en)
Japanese (ja)
Inventor
Chia-Cu P Mei
− ク ピー．メイ チア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH07307394A publication Critical patent/JPH07307394A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP7120340A 1994-04-08 1995-04-10 拡大ドレインｒｅｓｕｒｆ横ｄｍｏｓ装置 Pending JPH07307394A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/224,948 US5498554A (en) 1994-04-08 1994-04-08 Method of making extended drain resurf lateral DMOS devices
US224948 1994-04-08

Publications (1)

Publication Number Publication Date
JPH07307394A true JPH07307394A (ja) 1995-11-21

Family

ID=22842891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7120340A Pending JPH07307394A (ja) 1994-04-08 1995-04-10 拡大ドレインｒｅｓｕｒｆ横ｄｍｏｓ装置

Country Status (5)

Country Link
US (3) US5498554A (en, 2012)
EP (1) EP0677876B1 (en, 2012)
JP (1) JPH07307394A (en, 2012)
DE (1) DE69525188T2 (en, 2012)
TW (1) TW289158B (en, 2012)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451640B1 (en) 1996-12-20 2002-09-17 Nec Corporation Semiconductor device having NMOS and PMOS transistors on common substrate and method of fabricating the same
KR100448889B1 (ko) * 2002-11-22 2004-09-18 한국전자통신연구원 에스오아이 기판을 이용한 전력 집적회로용 소자의 제조방법
JP2006100578A (ja) * 2004-09-29 2006-04-13 Sanyo Electric Co Ltd 半導体装置の製造方法
KR100749186B1 (ko) * 2001-12-04 2007-08-13 후지 덴키 홀딩스 가부시키가이샤 횡형 고내압 ｍｏｓｆｅｔ 및 이것을 구비한 반도체장치
KR100834287B1 (ko) * 2006-12-27 2008-05-30 동부일렉트로닉스 주식회사 횡형 디모스소자 및 그 제조방법
JP2013145792A (ja) * 2012-01-13 2013-07-25 Toshiba Corp 半導体装置
JP2013187263A (ja) * 2012-03-06 2013-09-19 Canon Inc 半導体装置、記録装置及びそれらの製造方法
JP2015141993A (ja) * 2014-01-28 2015-08-03 ルネサスエレクトロニクス株式会社 半導体装置

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
US5547894A (en) * 1995-12-21 1996-08-20 International Business Machines Corporation CMOS processing with low and high-current FETs
US5753956A (en) * 1996-01-11 1998-05-19 Micron Technology, Inc. Semiconductor processing methods of forming complementary metal oxide semiconductor memory and other circuitry, and memory and other circuitry
US5880502A (en) 1996-09-06 1999-03-09 Micron Display Technology, Inc. Low and high voltage CMOS devices and process for fabricating same
US5728607A (en) * 1996-11-20 1998-03-17 Lucent Technologies Inc. Method of making a P-channel bipolar transistor
US6110804A (en) * 1996-12-02 2000-08-29 Semiconductor Components Industries, Llc Method of fabricating a semiconductor device having a floating field conductor
KR100220252B1 (ko) * 1996-12-28 1999-09-15 김영환 반도체 소자의 제조방법
US6160290A (en) * 1997-11-25 2000-12-12 Texas Instruments Incorporated Reduced surface field device having an extended field plate and method for forming the same
FR2779574B1 (fr) * 1998-06-03 2003-01-31 Sgs Thomson Microelectronics Procede de fabrication de transistors haute et basse tension
JP2000022142A (ja) * 1998-06-29 2000-01-21 Denso Corp 半導体装置及び半導体装置の製造方法
US5976923A (en) * 1998-12-08 1999-11-02 United Microelectronics Corp. Method for fabricating a high-voltage semiconductor device
US6091657A (en) * 1999-01-20 2000-07-18 Lucent Technologies Inc. Integrated circuit having protection of low voltage devices
SE523899C2 (sv) * 1999-04-15 2004-06-01 Ericsson Telefon Ab L M Halvledaranordning
US6365932B1 (en) 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
US6348382B1 (en) 1999-09-09 2002-02-19 Taiwan Semiconductor Manufacturing Company Integration process to increase high voltage breakdown performance
US6297098B1 (en) * 1999-11-01 2001-10-02 Taiwan Semiconductor Manufacturing Company Tilt-angle ion implant to improve junction breakdown in flash memory application
KR100336562B1 (ko) * 1999-12-10 2002-05-11 박종섭 모스 형성방법
KR100344810B1 (ko) 2000-07-26 2002-07-20 엘지전자주식회사 고전압소자를 이용한 전류구동회로
US6660603B2 (en) * 2000-09-21 2003-12-09 Texas Instruments Incorporated Higher voltage drain extended MOS transistors with self-aligned channel and drain extensions
US7115946B2 (en) * 2000-09-28 2006-10-03 Kabushiki Kaisha Toshiba MOS transistor having an offset region
SE519382C2 (sv) * 2000-11-03 2003-02-25 Ericsson Telefon Ab L M Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana
US6818494B1 (en) * 2001-03-26 2004-11-16 Hewlett-Packard Development Company, L.P. LDMOS and CMOS integrated circuit and method of making
WO2002095833A1 (en) * 2001-05-15 2002-11-28 Virtual Silicon Technology, Inc. High voltage n-channel ldmos devices built in a deep submicron cmos process
EP1321985B1 (en) * 2001-12-20 2007-10-24 STMicroelectronics S.r.l. Method of integrating metal oxide semiconductor field effect transistors
US6861341B2 (en) * 2002-02-22 2005-03-01 Xerox Corporation Systems and methods for integration of heterogeneous circuit devices
KR100867574B1 (ko) * 2002-05-09 2008-11-10 페어차일드코리아반도체 주식회사 고전압 디바이스 및 그 제조방법
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US7019377B2 (en) * 2002-12-17 2006-03-28 Micrel, Inc. Integrated circuit including high voltage devices and low voltage devices
JP2004228466A (ja) 2003-01-27 2004-08-12 Renesas Technology Corp 集積半導体装置およびその製造方法
US7235451B2 (en) * 2003-03-03 2007-06-26 Texas Instruments Incorporated Drain extended MOS devices with self-aligned floating region and fabrication methods therefor
US6900101B2 (en) * 2003-06-13 2005-05-31 Texas Instruments Incorporated LDMOS transistors and methods for making the same
US6867640B2 (en) * 2003-07-01 2005-03-15 Ami Semiconductor, Inc. Double-sided extended drain field effect transistor, and integrated overvoltage and reverse voltage protection circuit that uses the same
JP4198006B2 (ja) * 2003-07-25 2008-12-17 株式会社リコー 半導体装置の製造方法
US7005354B2 (en) * 2003-09-23 2006-02-28 Texas Instruments Incorporated Depletion drain-extended MOS transistors and methods for making the same
US7091535B2 (en) * 2004-03-05 2006-08-15 Taiwan Semiconductor Manufacturing Company High voltage device embedded non-volatile memory cell and fabrication method
US7238986B2 (en) * 2004-05-03 2007-07-03 Texas Instruments Incorporated Robust DEMOS transistors and method for making the same
US7358567B2 (en) * 2004-06-07 2008-04-15 United Microelectronics Corp. High-voltage MOS device and fabrication thereof
DE102005054672B4 (de) * 2005-11-16 2014-06-12 Austriamicrosystems Ag Hochvolt-Transistor mit niedriger Threshold-Spannung und einen solchen Hochvolt-Transistor umfassendes Bauelement
KR100690924B1 (ko) * 2005-12-21 2007-03-09 삼성전자주식회사 반도체 집적 회로 장치와 그 제조 방법
KR100796500B1 (ko) * 2005-12-29 2008-01-21 동부일렉트로닉스 주식회사 고전압 반도체 소자의 방법
US8558349B2 (en) * 2006-08-11 2013-10-15 System General Corp. Integrated circuit for a high-side transistor driver
US20080042221A1 (en) * 2006-08-15 2008-02-21 Liming Tsau High voltage transistor
ITTO20060785A1 (it) * 2006-11-02 2008-05-03 St Microelectronics Srl Dispositivo mos resistente alla radiazione ionizzante
US7781843B1 (en) 2007-01-11 2010-08-24 Hewlett-Packard Development Company, L.P. Integrating high-voltage CMOS devices with low-voltage CMOS
US20080237740A1 (en) * 2007-03-29 2008-10-02 United Microelectronics Corp. Semiconductor device and the manufacturing method thereof
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
US7548365B2 (en) * 2007-06-06 2009-06-16 Texas Instruments Incorporated Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
US7838940B2 (en) 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor
US8163621B2 (en) * 2008-06-06 2012-04-24 Globalfoundries Singapore Pte. Ltd. High performance LDMOS device having enhanced dielectric strain layer
US8097930B2 (en) * 2008-08-08 2012-01-17 Infineon Technologies Ag Semiconductor devices with trench isolations
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
US8643090B2 (en) * 2009-03-23 2014-02-04 Infineon Technologies Ag Semiconductor devices and methods for manufacturing a semiconductor device
US8247280B2 (en) * 2009-10-20 2012-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of low and high voltage CMOS devices
US8575702B2 (en) * 2009-11-27 2013-11-05 Magnachip Semiconductor, Ltd. Semiconductor device and method for fabricating semiconductor device
EP2402998B1 (en) * 2010-07-01 2020-04-08 ams AG Method of producing a p-channel LDMOS transistor
US8664720B2 (en) 2010-08-25 2014-03-04 Infineon Technologies Ag High voltage semiconductor devices
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
US9123642B1 (en) * 2013-07-22 2015-09-01 Cypress Semiconductor Corporation Method of forming drain extended MOS transistors for high voltage circuits
CN104425489B (zh) * 2013-08-20 2017-03-01 上海华虹宏力半导体制造有限公司 高压器件和低压器件集成结构和集成方法
CN104425370B (zh) * 2013-08-27 2017-10-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
DE102014017146A1 (de) * 2014-04-14 2015-10-15 Elmos Semiconductor Aktiengesellschaft Rail-to-Rail-Verpolschutz für den kombinierten Ein-/Ausgang eine integrierten CMOS Schaltkreises auf einem P-Substrat
US10340395B2 (en) * 2017-05-01 2019-07-02 Qualcomm Incorporated Semiconductor variable capacitor using threshold implant region
TWI796237B (zh) * 2021-12-03 2023-03-11 立錡科技股份有限公司 空乏型高壓nmos元件與空乏型低壓nmos元件整合製造方法
US12349448B2 (en) 2021-12-03 2025-07-01 Richtek Technology Corporation Integration manufacturing method of depletion high voltage NMOS device and depletion low voltage NMOS device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2940954A1 (de) * 1979-10-09 1981-04-23 Nixdorf Computer Ag, 4790 Paderborn Verfahren zur herstellung von hochspannungs-mos-transistoren enthaltenden mos-integrierten schaltkreisen sowie schaltungsanordnung zum schalten von leistungsstromkreisen unter verwendung derartiger hochspannungs-mos-transistoren
US4593458A (en) * 1984-11-02 1986-06-10 General Electric Company Fabrication of integrated circuit with complementary, dielectrically-isolated, high voltage semiconductor devices
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
JPH02237159A (ja) * 1989-03-10 1990-09-19 Toshiba Corp 半導体装置
US5047358A (en) * 1989-03-17 1991-09-10 Delco Electronics Corporation Process for forming high and low voltage CMOS transistors on a single integrated circuit chip
IT1235843B (it) * 1989-06-14 1992-11-03 Sgs Thomson Microelectronics Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
JP2861624B2 (ja) * 1992-05-13 1999-02-24 日本電気株式会社 半導体装置の製造方法
US5328859A (en) * 1993-01-04 1994-07-12 Xerox Corporation Method of making high voltage PNP bipolar transistor in CMOS

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451640B1 (en) 1996-12-20 2002-09-17 Nec Corporation Semiconductor device having NMOS and PMOS transistors on common substrate and method of fabricating the same
KR100749186B1 (ko) * 2001-12-04 2007-08-13 후지 덴키 홀딩스 가부시키가이샤 횡형 고내압 ｍｏｓｆｅｔ 및 이것을 구비한 반도체장치
KR100448889B1 (ko) * 2002-11-22 2004-09-18 한국전자통신연구원 에스오아이 기판을 이용한 전력 집적회로용 소자의 제조방법
JP2006100578A (ja) * 2004-09-29 2006-04-13 Sanyo Electric Co Ltd 半導体装置の製造方法
KR100834287B1 (ko) * 2006-12-27 2008-05-30 동부일렉트로닉스 주식회사 횡형 디모스소자 및 그 제조방법
JP2013145792A (ja) * 2012-01-13 2013-07-25 Toshiba Corp 半導体装置
JP2013187263A (ja) * 2012-03-06 2013-09-19 Canon Inc 半導体装置、記録装置及びそれらの製造方法
US9472648B2 (en) 2012-03-06 2016-10-18 Canon Kabushiki Kaisha Semiconductor device, printing apparatus, and manufacturing method thereof
JP2015141993A (ja) * 2014-01-28 2015-08-03 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
DE69525188D1 (de) 2002-03-14
TW289158B (en, 2012) 1996-10-21
DE69525188T2 (de) 2002-08-22
EP0677876B1 (en) 2002-01-30
US5501994A (en) 1996-03-26
US5498554A (en) 1996-03-12
US5747850A (en) 1998-05-05
EP0677876A1 (en) 1995-10-18

Similar Documents

Publication Publication Date Title
JPH07307394A (ja) 拡大ドレインｒｅｓｕｒｆ横ｄｍｏｓ装置
KR100292567B1 (ko) 측면2중확산절연게이트전계효과트랜지스터및그제조방법
KR100396170B1 (ko) 고전압금속산화물반도체장치및그제조방법
US5585660A (en) Extended drain resurf lateral DMOS devices
US4325180A (en) Process for monolithic integration of logic, control, and high voltage interface circuitry
US7821062B2 (en) Field effect transistor and method for producing a field effect transistor
US9390983B1 (en) Semiconductor device and method for fabricating the same
US5397715A (en) MOS transistor having increased gate-drain capacitance
US7315067B2 (en) Native high-voltage n-channel LDMOSFET in standard logic CMOS
US6514824B1 (en) Semiconductor device with a pair of transistors having dual work function gate electrodes
JP5762687B2 (ja) 所望のドーパント濃度を実現するためのイオン注入法
US10256340B2 (en) High-voltage semiconductor device and method for manufacturing the same
KR100303409B1 (ko) 선택적인게이트공핍을가지는고전압전계효과트랜지스터
US20070298574A1 (en) Method of fabricating different semiconductor device types with reduced sets of pattern levels
US20040232514A1 (en) Semiconductor device having isolation region and method of manufacturing the same
US5550064A (en) Method for fabricating high-voltage complementary metal-oxide-semiconductor transistors
US6882013B2 (en) Transistor with reduced short channel effects and method
US5796145A (en) Semiconductor device composed of MOSFET having threshold voltage control section
US6881634B2 (en) Buried-channel transistor with reduced leakage current
US6387763B1 (en) Field-effect transistor and corresponding manufacturing method
KR100537272B1 (ko) 반도체 소자의 제조 방법
JPH11289086A (ja) 半導体集積回路装置
JPH0715013A (ja) 半導体装置及びその製造方法
KR20040070690A (ko) 고전압 디모스 트랜지스터의 제조방법

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041001

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050311