TW289158B - - Google Patents

Info

Publication number
TW289158B
TW289158B TW084105844A TW84105844A TW289158B TW 289158 B TW289158 B TW 289158B TW 084105844 A TW084105844 A TW 084105844A TW 84105844 A TW84105844 A TW 84105844A TW 289158 B TW289158 B TW 289158B
Authority
TW
Taiwan
Application number
TW084105844A
Other languages
Chinese (zh)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW289158B publication Critical patent/TW289158B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
TW084105844A 1994-04-08 1995-06-09 TW289158B (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/224,948 US5498554A (en) 1994-04-08 1994-04-08 Method of making extended drain resurf lateral DMOS devices

Publications (1)

Publication Number Publication Date
TW289158B true TW289158B (en, 2012) 1996-10-21

Family

ID=22842891

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084105844A TW289158B (en, 2012) 1994-04-08 1995-06-09

Country Status (5)

Country Link
US (3) US5498554A (en, 2012)
EP (1) EP0677876B1 (en, 2012)
JP (1) JPH07307394A (en, 2012)
DE (1) DE69525188T2 (en, 2012)
TW (1) TW289158B (en, 2012)

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CN104425489B (zh) * 2013-08-20 2017-03-01 上海华虹宏力半导体制造有限公司 高压器件和低压器件集成结构和集成方法
CN104425370B (zh) * 2013-08-27 2017-10-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
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Also Published As

Publication number Publication date
DE69525188D1 (de) 2002-03-14
DE69525188T2 (de) 2002-08-22
EP0677876B1 (en) 2002-01-30
JPH07307394A (ja) 1995-11-21
US5501994A (en) 1996-03-26
US5498554A (en) 1996-03-12
US5747850A (en) 1998-05-05
EP0677876A1 (en) 1995-10-18

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees