JPH07263649A - 半導体メモリ装置およびその製造方法 - Google Patents
半導体メモリ装置およびその製造方法Info
- Publication number
- JPH07263649A JPH07263649A JP7039732A JP3973295A JPH07263649A JP H07263649 A JPH07263649 A JP H07263649A JP 7039732 A JP7039732 A JP 7039732A JP 3973295 A JP3973295 A JP 3973295A JP H07263649 A JPH07263649 A JP H07263649A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- insulating film
- transistor
- contact hole
- pattern layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000007769 metal material Substances 0.000 claims abstract description 86
- 230000002093 peripheral effect Effects 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000003990 capacitor Substances 0.000 claims abstract description 33
- 238000003860 storage Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 24
- 239000011810 insulating material Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 10
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940003969A KR950026000A (ko) | 1994-02-28 | 1994-02-28 | 반도체 메모리장치 및 그 제조방법 |
| KR1994P3969 | 1994-02-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07263649A true JPH07263649A (ja) | 1995-10-13 |
Family
ID=19378194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7039732A Pending JPH07263649A (ja) | 1994-02-28 | 1995-02-28 | 半導体メモリ装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH07263649A (zh) |
| KR (1) | KR950026000A (zh) |
| DE (1) | DE19504994A1 (zh) |
| TW (1) | TW264567B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000036466A1 (fr) * | 1998-12-11 | 2000-06-22 | Hitachi, Ltd. | Dispositif a circuit integre a semiconducteurs et procede de fabrication |
| US6163046A (en) * | 1996-08-27 | 2000-12-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating semiconductor device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6815762B2 (en) | 1997-05-30 | 2004-11-09 | Hitachi, Ltd. | Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines |
| JPH1032316A (ja) * | 1996-07-16 | 1998-02-03 | Nec Corp | 半導体記憶装置及びその製造方法 |
| KR100564422B1 (ko) * | 1999-04-22 | 2006-03-28 | 주식회사 하이닉스반도체 | Ｍｍｌ반도체소자의 디커플링 커패시터 및 그 형성방법 |
-
1994
- 1994-02-28 KR KR1019940003969A patent/KR950026000A/ko not_active IP Right Cessation
-
1995
- 1995-01-27 TW TW084100765A patent/TW264567B/zh active
- 1995-02-15 DE DE19504994A patent/DE19504994A1/de not_active Withdrawn
- 1995-02-28 JP JP7039732A patent/JPH07263649A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6163046A (en) * | 1996-08-27 | 2000-12-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating semiconductor device |
| WO2000036466A1 (fr) * | 1998-12-11 | 2000-06-22 | Hitachi, Ltd. | Dispositif a circuit integre a semiconducteurs et procede de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| TW264567B (zh) | 1995-12-01 |
| KR950026000A (ko) | 1995-09-18 |
| DE19504994A1 (de) | 1995-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2528731B2 (ja) | 半導体記憶装置およびその製造方法 | |
| JP2501501B2 (ja) | 半導体メモリ―装置のメモリ―セルに用いられるキャパシタ―の製造方法及びその構造 | |
| JP2608363B2 (ja) | 半導体メモリ装置及びその製造方法 | |
| JP2682455B2 (ja) | 半導体記憶装置およびその製造方法 | |
| US7361552B2 (en) | Semiconductor integrated circuit including a DRAM and an analog circuit | |
| JP2990870B2 (ja) | 半導体集積回路装置及びその製造方法 | |
| US6455368B2 (en) | Semiconductor memory device having bitlines of common height | |
| US6069038A (en) | Method of manufacturing a semiconductor integrated circuit device | |
| JPH0738068A (ja) | 半導体装置およびその製造方法 | |
| KR100189963B1 (ko) | 반도체 메모리장치 및 그 제조방법 | |
| US5396094A (en) | Semiconductor memory device with a capacitor having a protection layer | |
| JPH0766297A (ja) | 半導体記憶装置 | |
| JP3397809B2 (ja) | 半導体メモリセルの製造方法 | |
| US5571742A (en) | Method of fabricating stacked capacitor of DRAM cell | |
| US6040596A (en) | Dynamic random access memory devices having improved peripheral circuit resistors therein | |
| JPH11214660A (ja) | Ｄｒａｍ装置の製造方法 | |
| US7064029B2 (en) | Semiconductor memory device and method of producing the same | |
| US6395601B2 (en) | Method for forming a lower electrode for use in a semiconductor device | |
| US5729034A (en) | Semiconductor DRAM cell having a capacitor | |
| JPH07263649A (ja) | 半導体メモリ装置およびその製造方法 | |
| US6184075B1 (en) | Method of fabricating interconnect lines and plate electrodes of a storage capacitor in a semiconductor device | |
| KR100640574B1 (ko) | 반도체 메모리 소자의 제조방법 | |
| JP3120462B2 (ja) | 半導体集積回路装置及びその製造方法 | |
| US5691227A (en) | Method for forming charge storage electrodes of semiconductor device | |
| JPH08236721A (ja) | 半導体装置及びその製造方法 |