JPH07263649A - 半導体メモリ装置およびその製造方法 - Google Patents
半導体メモリ装置およびその製造方法Info
- Publication number
- JPH07263649A JPH07263649A JP7039732A JP3973295A JPH07263649A JP H07263649 A JPH07263649 A JP H07263649A JP 7039732 A JP7039732 A JP 7039732A JP 3973295 A JP3973295 A JP 3973295A JP H07263649 A JPH07263649 A JP H07263649A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- insulating film
- transistor
- contact hole
- metal material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1994P3969 | 1994-02-28 | ||
| KR1019940003969A KR950026000A (ko) | 1994-02-28 | 1994-02-28 | 반도체 메모리장치 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07263649A true JPH07263649A (ja) | 1995-10-13 |
Family
ID=19378194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7039732A Pending JPH07263649A (ja) | 1994-02-28 | 1995-02-28 | 半導体メモリ装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH07263649A (enrdf_load_stackoverflow) |
| KR (1) | KR950026000A (enrdf_load_stackoverflow) |
| DE (1) | DE19504994A1 (enrdf_load_stackoverflow) |
| TW (1) | TW264567B (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000036466A1 (fr) * | 1998-12-11 | 2000-06-22 | Hitachi, Ltd. | Dispositif a circuit integre a semiconducteurs et procede de fabrication |
| US6163046A (en) * | 1996-08-27 | 2000-12-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating semiconductor device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6815762B2 (en) | 1997-05-30 | 2004-11-09 | Hitachi, Ltd. | Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines |
| JPH1032316A (ja) * | 1996-07-16 | 1998-02-03 | Nec Corp | 半導体記憶装置及びその製造方法 |
| KR100564422B1 (ko) * | 1999-04-22 | 2006-03-28 | 주식회사 하이닉스반도체 | Ｍｍｌ반도체소자의 디커플링 커패시터 및 그 형성방법 |
-
1994
- 1994-02-28 KR KR1019940003969A patent/KR950026000A/ko not_active Abandoned
-
1995
- 1995-01-27 TW TW084100765A patent/TW264567B/zh active
- 1995-02-15 DE DE19504994A patent/DE19504994A1/de not_active Withdrawn
- 1995-02-28 JP JP7039732A patent/JPH07263649A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6163046A (en) * | 1996-08-27 | 2000-12-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating semiconductor device |
| WO2000036466A1 (fr) * | 1998-12-11 | 2000-06-22 | Hitachi, Ltd. | Dispositif a circuit integre a semiconducteurs et procede de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19504994A1 (de) | 1995-08-31 |
| TW264567B (enrdf_load_stackoverflow) | 1995-12-01 |
| KR950026000A (ko) | 1995-09-18 |
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