JPH07161992A - 絶縁ゲート型バイポーラトランジスタ - Google Patents

絶縁ゲート型バイポーラトランジスタ

Info

Publication number
JPH07161992A
JPH07161992A JP6027074A JP2707494A JPH07161992A JP H07161992 A JPH07161992 A JP H07161992A JP 6027074 A JP6027074 A JP 6027074A JP 2707494 A JP2707494 A JP 2707494A JP H07161992 A JPH07161992 A JP H07161992A
Authority
JP
Japan
Prior art keywords
main
cell
cells
current
igbt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6027074A
Other languages
English (en)
Japanese (ja)
Inventor
Masato Otsuki
正人 大月
Shigeyuki Ohigata
重行 大日方
Yukio Yano
幸雄 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP6027074A priority Critical patent/JPH07161992A/ja
Priority to EP94307477A priority patent/EP0649176A3/de
Priority to US08/321,999 priority patent/US5530277A/en
Publication of JPH07161992A publication Critical patent/JPH07161992A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
JP6027074A 1993-10-14 1994-02-25 絶縁ゲート型バイポーラトランジスタ Pending JPH07161992A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6027074A JPH07161992A (ja) 1993-10-14 1994-02-25 絶縁ゲート型バイポーラトランジスタ
EP94307477A EP0649176A3 (de) 1993-10-14 1994-10-12 Bipolartransistor mit isoliertem Gate.
US08/321,999 US5530277A (en) 1993-10-14 1994-10-12 Insulated-gate bipolar transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25619793 1993-10-14
JP5-256197 1993-10-14
JP6027074A JPH07161992A (ja) 1993-10-14 1994-02-25 絶縁ゲート型バイポーラトランジスタ

Publications (1)

Publication Number Publication Date
JPH07161992A true JPH07161992A (ja) 1995-06-23

Family

ID=26364964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6027074A Pending JPH07161992A (ja) 1993-10-14 1994-02-25 絶縁ゲート型バイポーラトランジスタ

Country Status (3)

Country Link
US (1) US5530277A (de)
EP (1) EP0649176A3 (de)
JP (1) JPH07161992A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100914561B1 (ko) * 2006-06-30 2009-08-31 산요덴키가부시키가이샤 절연 게이트형 반도체 장치
US8604514B2 (en) 2009-03-24 2013-12-10 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US9541599B2 (en) 2011-04-04 2017-01-10 Fuji Electric Co., Ltd. Power switch wafer test method

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09135023A (ja) * 1995-11-08 1997-05-20 Toshiba Corp 圧接型半導体装置
US6002153A (en) * 1995-12-07 1999-12-14 Kabushiki Kaisha Toshiba MOS type semiconductor device with a current detecting function
GB9605672D0 (en) * 1996-03-18 1996-05-22 Westinghouse Brake & Signal Insulated gate bipolar transistors
EP0892435A1 (de) * 1997-07-14 1999-01-20 STMicroelectronics S.r.l. Integrierter Halbleitertransistor mit Stromüberwachung
JP3480811B2 (ja) * 1997-07-15 2003-12-22 株式会社東芝 電圧駆動型電力用半導体装置
KR100251528B1 (ko) * 1997-10-22 2000-04-15 김덕중 복수개의 센스 소오스 패드를 구비한 센스 전계효과 트랜지스터
DE19823170A1 (de) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
WO1999044240A1 (de) 1998-02-27 1999-09-02 Asea Brown Boveri Ag Bipolartransistor mit isolierter gateelektrode
US6140212A (en) * 1998-06-01 2000-10-31 Motorola, Inc. Semiconductor device and method therefor
JP3412599B2 (ja) * 2000-04-19 2003-06-03 株式会社デンソー 半導体装置
US7094364B2 (en) * 2003-11-26 2006-08-22 General Electric Company Method of authenticating polymers, authenticatable polymers, methods of making authenticatable polymers and authenticatable articles, and articles made there from
JP2009081381A (ja) * 2007-09-27 2009-04-16 Panasonic Corp 半導体装置
JP2009088317A (ja) * 2007-10-01 2009-04-23 Panasonic Corp 高耐圧半導体スイッチング素子
US8188814B2 (en) * 2008-02-15 2012-05-29 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. High voltage isolation dual capacitor communication system
US7741896B2 (en) * 2008-02-15 2010-06-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. High voltage drive circuit employing capacitive signal coupling and associated devices and methods
US7741935B2 (en) * 2008-02-15 2010-06-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. High voltage isolation semiconductor capacitor digital communication device and corresponding package
JP2011049393A (ja) * 2009-08-27 2011-03-10 Mitsubishi Electric Corp 半導体装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
US5063307A (en) * 1990-09-20 1991-11-05 Ixys Corporation Insulated gate transistor devices with temperature and current sensor
JP3180831B2 (ja) * 1991-03-22 2001-06-25 富士電機株式会社 絶縁ゲート制御半導体装置
DE4219019B4 (de) * 1991-06-10 2004-12-16 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleiterbauelement

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100914561B1 (ko) * 2006-06-30 2009-08-31 산요덴키가부시키가이샤 절연 게이트형 반도체 장치
US8604514B2 (en) 2009-03-24 2013-12-10 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US9541599B2 (en) 2011-04-04 2017-01-10 Fuji Electric Co., Ltd. Power switch wafer test method

Also Published As

Publication number Publication date
EP0649176A2 (de) 1995-04-19
US5530277A (en) 1996-06-25
EP0649176A3 (de) 1995-08-02

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