JPH0715133Y2 - 半導体薄膜形成装置の反応管 - Google Patents
半導体薄膜形成装置の反応管Info
- Publication number
- JPH0715133Y2 JPH0715133Y2 JP1989046307U JP4630789U JPH0715133Y2 JP H0715133 Y2 JPH0715133 Y2 JP H0715133Y2 JP 1989046307 U JP1989046307 U JP 1989046307U JP 4630789 U JP4630789 U JP 4630789U JP H0715133 Y2 JPH0715133 Y2 JP H0715133Y2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- reaction tube
- susceptor
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 title claims description 17
- 239000013078 crystal Substances 0.000 claims description 28
- 239000000428 dust Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 23
- 230000002265 prevention Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 239000007787 solid Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- -1 etc.) do not fall Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989046307U JPH0715133Y2 (ja) | 1989-04-21 | 1989-04-21 | 半導体薄膜形成装置の反応管 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989046307U JPH0715133Y2 (ja) | 1989-04-21 | 1989-04-21 | 半導体薄膜形成装置の反応管 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02138419U JPH02138419U (en, 2012) | 1990-11-19 |
| JPH0715133Y2 true JPH0715133Y2 (ja) | 1995-04-10 |
Family
ID=31561276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989046307U Expired - Lifetime JPH0715133Y2 (ja) | 1989-04-21 | 1989-04-21 | 半導体薄膜形成装置の反応管 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0715133Y2 (en, 2012) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60119743U (ja) * | 1984-01-23 | 1985-08-13 | サンケン電気株式会社 | 化学的気相付着装置 |
| JPS63226919A (ja) * | 1987-03-16 | 1988-09-21 | Nec Corp | 気相成長装置 |
-
1989
- 1989-04-21 JP JP1989046307U patent/JPH0715133Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02138419U (en, 2012) | 1990-11-19 |
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