JPH0682604B2 - Ｘ線マスク - Google Patents

Ｘ線マスク

Info

Publication number
JPH0682604B2
JPH0682604B2 JP19570687A JP19570687A JPH0682604B2 JP H0682604 B2 JPH0682604 B2 JP H0682604B2 JP 19570687 A JP19570687 A JP 19570687A JP 19570687 A JP19570687 A JP 19570687A JP H0682604 B2 JPH0682604 B2 JP H0682604B2
Authority
JP
Japan
Prior art keywords
thin film
ray
transparent
transparent conductive
ray mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP19570687A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6439021A (en
Inventor
晋 竹内
信行 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19570687A priority Critical patent/JPH0682604B2/ja
Priority to DE3820421A priority patent/DE3820421A1/de
Publication of JPS6439021A publication Critical patent/JPS6439021A/ja
Priority to US07/405,583 priority patent/US5023156A/en
Priority to US07/678,423 priority patent/US5132186A/en
Publication of JPH0682604B2 publication Critical patent/JPH0682604B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP19570687A 1987-08-04 1987-08-04 Ｘ線マスク Expired - Lifetime JPH0682604B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP19570687A JPH0682604B2 (ja) 1987-08-04 1987-08-04 Ｘ線マスク
DE3820421A DE3820421A1 (de) 1987-08-04 1988-06-15 Maske zur roentgenlithographie und verfahren zur herstellung einer solchen
US07/405,583 US5023156A (en) 1987-08-04 1989-09-11 Mask for X-ray lityhography and method of manufacturing the same
US07/678,423 US5132186A (en) 1987-08-04 1991-04-01 Mask for x-ray lithography and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19570687A JPH0682604B2 (ja) 1987-08-04 1987-08-04 Ｘ線マスク

Publications (2)

Publication Number Publication Date
JPS6439021A JPS6439021A (en) 1989-02-09
JPH0682604B2 true JPH0682604B2 (ja) 1994-10-19

Family

ID=16345621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19570687A Expired - Lifetime JPH0682604B2 (ja) 1987-08-04 1987-08-04 Ｘ線マスク

Country Status (3)

Country Link
US (2) US5023156A (en, 2012)
JP (1) JPH0682604B2 (en, 2012)
DE (1) DE3820421A1 (en, 2012)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682604B2 (ja) * 1987-08-04 1994-10-19 三菱電機株式会社 Ｘ線マスク
JP2723600B2 (ja) * 1989-03-31 1998-03-09 キヤノン株式会社 Ｘ線露光装置及びｘ線露光方法
DE69033996T2 (de) * 1989-04-28 2002-12-05 Fujitsu Ltd., Kawasaki Maske, Verfahren zur Herstellung der Maske und Verfahren zur Musterherstellung mit einer Maske
JPH03228053A (ja) * 1990-02-01 1991-10-09 Fujitsu Ltd 光露光レチクル
US5217829A (en) * 1990-02-22 1993-06-08 Presstek, Inc. Method for producing photomasks
JP2728971B2 (ja) * 1990-10-02 1998-03-18 キヤノン株式会社 Ｘ線露光装置およびｘ線露光方法
ATE184711T1 (de) * 1991-11-15 1999-10-15 Canon Kk Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur
JPH05343299A (ja) * 1992-06-08 1993-12-24 Mitsubishi Electric Corp Ｘ線マスク及びｘ線マスクの製造方法
JPH0611376A (ja) * 1992-06-26 1994-01-21 Komatsu Ltd 油圧回路の金属粉量検出装置
US5354633A (en) * 1993-09-22 1994-10-11 Presstek, Inc. Laser imageable photomask constructions
US5538151A (en) * 1995-01-20 1996-07-23 International Business Machines Corp. Recovery of an anodically bonded glass device from a susstrate by use of a metal interlayer
KR0138278B1 (ko) * 1995-01-24 1998-04-27 김광호 엑스레이 리소그래피용 마스크 및 그의 제조방법
US5677090A (en) * 1995-02-23 1997-10-14 Mitsubishi Denki Kabushiki Kaisha Method of making X-ray mask having reduced stress
JP3578872B2 (ja) * 1995-10-26 2004-10-20 三菱電機株式会社 Ｘ線マスクの製造方法および加熱装置
KR100244458B1 (ko) * 1997-03-26 2000-03-02 김영환 마스크 및 그 제조방법
JP4725729B2 (ja) * 2006-01-19 2011-07-13 株式会社ニコン 多層膜反射鏡、及びｅｕｖ露光装置
JP2010027743A (ja) 2008-07-16 2010-02-04 Ebara Corp インプリント用ガラス基板、レジストパターン形成方法、インプリント用ガラス基板の検査方法及び検査装置
US9612522B2 (en) * 2014-07-11 2017-04-04 Applied Materials, Inc. Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
US3892973A (en) * 1974-02-15 1975-07-01 Bell Telephone Labor Inc Mask structure for X-ray lithography
DE3119682A1 (de) * 1981-05-18 1982-12-02 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie"
US4453086A (en) * 1981-12-31 1984-06-05 International Business Machines Corporation Electron beam system with reduced charge buildup
JPH0812839B2 (ja) * 1985-03-20 1996-02-07 株式会社日立製作所 Ｘ線露光用マスク
US4595649A (en) * 1985-02-19 1986-06-17 Allied Corporation Glassy TiO2 polymer films as electron beam charge dissipation layers
JPS61200415A (ja) * 1985-03-01 1986-09-05 Mitsubishi Electric Corp 微細パタ−ン検査装置
US4680243A (en) * 1985-08-02 1987-07-14 Micronix Corporation Method for producing a mask for use in X-ray photolithography and resulting structure
JPS6240146A (ja) * 1985-08-14 1987-02-21 Mitsubishi Electric Corp 荷電ビ−ムパタ−ン欠陥検査装置
JPS62202518A (ja) * 1986-02-03 1987-09-07 Fujitsu Ltd Ｘ線露光用マスク
DE3605916A1 (de) * 1986-02-25 1987-09-10 Licentia Gmbh Verfahren zur kontrasterhoehung bei der roentgenstrahl-lithographie und anordnung zur durchfuehrung des verfahrens
JPH0682604B2 (ja) * 1987-08-04 1994-10-19 三菱電機株式会社 Ｘ線マスク

Also Published As

Publication number Publication date
US5132186A (en) 1992-07-21
JPS6439021A (en) 1989-02-09
DE3820421A1 (de) 1989-02-16
US5023156A (en) 1991-06-11
DE3820421C2 (en, 2012) 1992-08-13

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