DE3820421C2 - - Google Patents
Info
- Publication number
- DE3820421C2 DE3820421C2 DE3820421A DE3820421A DE3820421C2 DE 3820421 C2 DE3820421 C2 DE 3820421C2 DE 3820421 A DE3820421 A DE 3820421A DE 3820421 A DE3820421 A DE 3820421A DE 3820421 C2 DE3820421 C2 DE 3820421C2
- Authority
- DE
- Germany
- Prior art keywords
- transparent
- thin film
- ray
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 104
- 239000010409 thin film Substances 0.000 claims description 45
- 238000001015 X-ray lithography Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 description 24
- 238000010894 electron beam technology Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19570687A JPH0682604B2 (ja) | 1987-08-04 | 1987-08-04 | Ｘ線マスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3820421A1 DE3820421A1 (de) | 1989-02-16 |
| DE3820421C2 true DE3820421C2 (en, 2012) | 1992-08-13 |
Family
ID=16345621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3820421A Granted DE3820421A1 (de) | 1987-08-04 | 1988-06-15 | Maske zur roentgenlithographie und verfahren zur herstellung einer solchen |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US5023156A (en, 2012) |
| JP (1) | JPH0682604B2 (en, 2012) |
| DE (1) | DE3820421A1 (en, 2012) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682604B2 (ja) * | 1987-08-04 | 1994-10-19 | 三菱電機株式会社 | Ｘ線マスク |
| JP2723600B2 (ja) * | 1989-03-31 | 1998-03-09 | キヤノン株式会社 | Ｘ線露光装置及びｘ線露光方法 |
| DE69033996T2 (de) * | 1989-04-28 | 2002-12-05 | Fujitsu Ltd., Kawasaki | Maske, Verfahren zur Herstellung der Maske und Verfahren zur Musterherstellung mit einer Maske |
| JPH03228053A (ja) * | 1990-02-01 | 1991-10-09 | Fujitsu Ltd | 光露光レチクル |
| US5217829A (en) * | 1990-02-22 | 1993-06-08 | Presstek, Inc. | Method for producing photomasks |
| JP2728971B2 (ja) * | 1990-10-02 | 1998-03-18 | キヤノン株式会社 | Ｘ線露光装置およびｘ線露光方法 |
| ATE184711T1 (de) * | 1991-11-15 | 1999-10-15 | Canon Kk | Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur |
| JPH05343299A (ja) * | 1992-06-08 | 1993-12-24 | Mitsubishi Electric Corp | Ｘ線マスク及びｘ線マスクの製造方法 |
| JPH0611376A (ja) * | 1992-06-26 | 1994-01-21 | Komatsu Ltd | 油圧回路の金属粉量検出装置 |
| US5354633A (en) * | 1993-09-22 | 1994-10-11 | Presstek, Inc. | Laser imageable photomask constructions |
| US5538151A (en) * | 1995-01-20 | 1996-07-23 | International Business Machines Corp. | Recovery of an anodically bonded glass device from a susstrate by use of a metal interlayer |
| KR0138278B1 (ko) * | 1995-01-24 | 1998-04-27 | 김광호 | 엑스레이 리소그래피용 마스크 및 그의 제조방법 |
| US5677090A (en) * | 1995-02-23 | 1997-10-14 | Mitsubishi Denki Kabushiki Kaisha | Method of making X-ray mask having reduced stress |
| JP3578872B2 (ja) * | 1995-10-26 | 2004-10-20 | 三菱電機株式会社 | Ｘ線マスクの製造方法および加熱装置 |
| KR100244458B1 (ko) * | 1997-03-26 | 2000-03-02 | 김영환 | 마스크 및 그 제조방법 |
| JP4725729B2 (ja) * | 2006-01-19 | 2011-07-13 | 株式会社ニコン | 多層膜反射鏡、及びｅｕｖ露光装置 |
| JP2010027743A (ja) | 2008-07-16 | 2010-02-04 | Ebara Corp | インプリント用ガラス基板、レジストパターン形成方法、インプリント用ガラス基板の検査方法及び検査装置 |
| US9612522B2 (en) * | 2014-07-11 | 2017-04-04 | Applied Materials, Inc. | Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3873824A (en) * | 1973-10-01 | 1975-03-25 | Texas Instruments Inc | X-ray lithography mask |
| US3892973A (en) * | 1974-02-15 | 1975-07-01 | Bell Telephone Labor Inc | Mask structure for X-ray lithography |
| DE3119682A1 (de) * | 1981-05-18 | 1982-12-02 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie" |
| US4453086A (en) * | 1981-12-31 | 1984-06-05 | International Business Machines Corporation | Electron beam system with reduced charge buildup |
| JPH0812839B2 (ja) * | 1985-03-20 | 1996-02-07 | 株式会社日立製作所 | Ｘ線露光用マスク |
| US4595649A (en) * | 1985-02-19 | 1986-06-17 | Allied Corporation | Glassy TiO2 polymer films as electron beam charge dissipation layers |
| JPS61200415A (ja) * | 1985-03-01 | 1986-09-05 | Mitsubishi Electric Corp | 微細パタ−ン検査装置 |
| US4680243A (en) * | 1985-08-02 | 1987-07-14 | Micronix Corporation | Method for producing a mask for use in X-ray photolithography and resulting structure |
| JPS6240146A (ja) * | 1985-08-14 | 1987-02-21 | Mitsubishi Electric Corp | 荷電ビ−ムパタ−ン欠陥検査装置 |
| JPS62202518A (ja) * | 1986-02-03 | 1987-09-07 | Fujitsu Ltd | Ｘ線露光用マスク |
| DE3605916A1 (de) * | 1986-02-25 | 1987-09-10 | Licentia Gmbh | Verfahren zur kontrasterhoehung bei der roentgenstrahl-lithographie und anordnung zur durchfuehrung des verfahrens |
| JPH0682604B2 (ja) * | 1987-08-04 | 1994-10-19 | 三菱電機株式会社 | Ｘ線マスク |
-
1987
- 1987-08-04 JP JP19570687A patent/JPH0682604B2/ja not_active Expired - Lifetime
-
1988
- 1988-06-15 DE DE3820421A patent/DE3820421A1/de active Granted
-
1989
- 1989-09-11 US US07/405,583 patent/US5023156A/en not_active Expired - Fee Related
-
1991
- 1991-04-01 US US07/678,423 patent/US5132186A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0682604B2 (ja) | 1994-10-19 |
| US5132186A (en) | 1992-07-21 |
| JPS6439021A (en) | 1989-02-09 |
| DE3820421A1 (de) | 1989-02-16 |
| US5023156A (en) | 1991-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |