JPH06334054A - マイクロ波半導体回路装置 - Google Patents

マイクロ波半導体回路装置

Info

Publication number
JPH06334054A
JPH06334054A JP5116845A JP11684593A JPH06334054A JP H06334054 A JPH06334054 A JP H06334054A JP 5116845 A JP5116845 A JP 5116845A JP 11684593 A JP11684593 A JP 11684593A JP H06334054 A JPH06334054 A JP H06334054A
Authority
JP
Japan
Prior art keywords
matching circuits
input
output
microwave
matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5116845A
Other languages
English (en)
Japanese (ja)
Inventor
Kenichi Fujii
憲一 藤井
Yosuke Nishikawa
洋右 西川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5116845A priority Critical patent/JPH06334054A/ja
Priority to KR1019940009698A priority patent/KR0134747B1/ko
Publication of JPH06334054A publication Critical patent/JPH06334054A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Microwave Amplifiers (AREA)
JP5116845A 1993-05-19 1993-05-19 マイクロ波半導体回路装置 Pending JPH06334054A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5116845A JPH06334054A (ja) 1993-05-19 1993-05-19 マイクロ波半導体回路装置
KR1019940009698A KR0134747B1 (ko) 1993-05-19 1994-05-03 반도체 메모리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5116845A JPH06334054A (ja) 1993-05-19 1993-05-19 マイクロ波半導体回路装置

Publications (1)

Publication Number Publication Date
JPH06334054A true JPH06334054A (ja) 1994-12-02

Family

ID=14697056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5116845A Pending JPH06334054A (ja) 1993-05-19 1993-05-19 マイクロ波半導体回路装置

Country Status (2)

Country Link
JP (1) JPH06334054A (ko)
KR (1) KR0134747B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054874A (ja) * 2010-09-03 2012-03-15 Mitsubishi Electric Corp 高周波増幅器
JP2013098339A (ja) * 2011-10-31 2013-05-20 Sumitomo Electric Device Innovations Inc 高周波回路装置
US9602068B2 (en) 2013-08-29 2017-03-21 Mitsubishi Electric Corporation High-frequency power amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054874A (ja) * 2010-09-03 2012-03-15 Mitsubishi Electric Corp 高周波増幅器
JP2013098339A (ja) * 2011-10-31 2013-05-20 Sumitomo Electric Device Innovations Inc 高周波回路装置
US9602068B2 (en) 2013-08-29 2017-03-21 Mitsubishi Electric Corporation High-frequency power amplifier

Also Published As

Publication number Publication date
KR0134747B1 (ko) 1998-04-30
KR940026964A (ko) 1994-12-10

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