JPH0586850B2 - - Google Patents

Info

Publication number
JPH0586850B2
JPH0586850B2 JP60108704A JP10870485A JPH0586850B2 JP H0586850 B2 JPH0586850 B2 JP H0586850B2 JP 60108704 A JP60108704 A JP 60108704A JP 10870485 A JP10870485 A JP 10870485A JP H0586850 B2 JPH0586850 B2 JP H0586850B2
Authority
JP
Japan
Prior art keywords
sub
pattern
deflector
deflection
sample stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60108704A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61267320A (ja
Inventor
Mineo Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP10870485A priority Critical patent/JPS61267320A/ja
Publication of JPS61267320A publication Critical patent/JPS61267320A/ja
Publication of JPH0586850B2 publication Critical patent/JPH0586850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
JP10870485A 1985-05-21 1985-05-21 荷電ビ−ム露光方法 Granted JPS61267320A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10870485A JPS61267320A (ja) 1985-05-21 1985-05-21 荷電ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10870485A JPS61267320A (ja) 1985-05-21 1985-05-21 荷電ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS61267320A JPS61267320A (ja) 1986-11-26
JPH0586850B2 true JPH0586850B2 (enrdf_load_stackoverflow) 1993-12-14

Family

ID=14491498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10870485A Granted JPS61267320A (ja) 1985-05-21 1985-05-21 荷電ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS61267320A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111945B2 (ja) * 1987-05-15 1995-11-29 東芝機械株式会社 荷電ビ−ム描画方法及び描画装置
US4818885A (en) * 1987-06-30 1989-04-04 International Business Machines Corporation Electron beam writing method and system using large range deflection in combination with a continuously moving table

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231810A (ja) * 1983-06-14 1984-12-26 Toshiba Corp 電子ビ−ム露光装置

Also Published As

Publication number Publication date
JPS61267320A (ja) 1986-11-26

Similar Documents

Publication Publication Date Title
EP1253619B1 (en) Charged particle beam exposure apparatus and device manufacturing method using same
US6472672B1 (en) Electron beam exposure apparatus and its control method
JP5484808B2 (ja) 描画装置及び描画方法
US6552353B1 (en) Multi-electron beam exposure method and apparatus and device manufacturing method
JPH07191199A (ja) 荷電粒子ビーム露光システム及び露光方法
JP3993334B2 (ja) 荷電ビーム描画装置
JPH0691005B2 (ja) 荷電ビ−ム描画方法
US6541169B1 (en) Methods for charged-particle-beam microlithography including correction of deflection aberrations, and device-manufacturing methods comprising same
JPH0586850B2 (enrdf_load_stackoverflow)
US10283314B2 (en) Charged particle beam writing apparatus, and charged particle beam writing method
JP3455006B2 (ja) 荷電粒子ビーム装置
JP3285645B2 (ja) 荷電ビーム描画方法
US6388261B1 (en) Charged-particle-beam microlithography apparatus and methods exhibiting reduced astigmatisms and linear distortion
US12046447B2 (en) Multi-charged-particle-beam writing method, multi-charged-particle-beam writing apparatus, and computer-readable recording medium
JPH01248617A (ja) 荷電粒子ビーム露光装置
US20250079120A1 (en) Multi-charged particle beam writing method and multi-charged particle beam writing apparatus
JP7468795B1 (ja) マルチ荷電粒子ビーム描画装置
JPS62149126A (ja) 荷電ビ−ム露光方法
JP2005302868A (ja) 電子ビーム描画方法および装置
JP3460416B2 (ja) 電子ビーム描画装置
JP2502704B2 (ja) 電子ビ―ム描画方法
JPH01278725A (ja) 荷電粒子ビーム露光装置
JP3086238B2 (ja) 荷電粒子ビーム露光装置
JPS61183926A (ja) 荷電ビ−ム照射装置
JP3212630B2 (ja) 荷電ビーム露光方法及び露光装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term