JPH058584B2 - - Google Patents

Info

Publication number
JPH058584B2
JPH058584B2 JP57216821A JP21682182A JPH058584B2 JP H058584 B2 JPH058584 B2 JP H058584B2 JP 57216821 A JP57216821 A JP 57216821A JP 21682182 A JP21682182 A JP 21682182A JP H058584 B2 JPH058584 B2 JP H058584B2
Authority
JP
Japan
Prior art keywords
power supply
voltage
channel
circuit
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57216821A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59107560A (ja
Inventor
Osamu Minato
Toshiaki Masuhara
Toshio Sasaki
Akira Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57216821A priority Critical patent/JPS59107560A/ja
Publication of JPS59107560A publication Critical patent/JPS59107560A/ja
Publication of JPH058584B2 publication Critical patent/JPH058584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57216821A 1982-12-13 1982-12-13 半導体集積回路装置 Granted JPS59107560A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57216821A JPS59107560A (ja) 1982-12-13 1982-12-13 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57216821A JPS59107560A (ja) 1982-12-13 1982-12-13 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS59107560A JPS59107560A (ja) 1984-06-21
JPH058584B2 true JPH058584B2 (ko) 1993-02-02

Family

ID=16694414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57216821A Granted JPS59107560A (ja) 1982-12-13 1982-12-13 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59107560A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2869791B2 (ja) * 1988-08-31 1999-03-10 株式会社日立製作所 半導体集積回路装置およびそれを応用した電子装置
JPH02196469A (ja) * 1989-01-25 1990-08-03 Fujitsu Ltd 半導体装置
DE69532553T2 (de) 1994-11-30 2004-12-23 Sharp K.K. Entwicklungsgerät
JP3068513B2 (ja) * 1997-07-04 2000-07-24 日本電気株式会社 半導体装置、その製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423340A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Mis semiconductor integrated circuit
JPS5539412A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Insulating gate field effect transistor integrated circuit and its manufacture
JPS5673468A (en) * 1979-11-21 1981-06-18 Toshiba Corp Mos type semiconductor device
JPS5693360A (en) * 1979-12-26 1981-07-28 Mitsubishi Electric Corp Semiconductor device
JPS56115570A (en) * 1980-02-18 1981-09-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56146275A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS56146276A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS5710822A (en) * 1980-06-23 1982-01-20 Toshiba Corp Integrated circuit device
JPS5741721A (en) * 1980-08-26 1982-03-09 Seiko Instr & Electronics Ltd Constant voltage power circuit
JPS57126161A (en) * 1981-01-28 1982-08-05 Nec Corp Integrated circuit device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423340A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Mis semiconductor integrated circuit
JPS5539412A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Insulating gate field effect transistor integrated circuit and its manufacture
JPS5673468A (en) * 1979-11-21 1981-06-18 Toshiba Corp Mos type semiconductor device
JPS5693360A (en) * 1979-12-26 1981-07-28 Mitsubishi Electric Corp Semiconductor device
JPS56115570A (en) * 1980-02-18 1981-09-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56146275A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS56146276A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS5710822A (en) * 1980-06-23 1982-01-20 Toshiba Corp Integrated circuit device
JPS5741721A (en) * 1980-08-26 1982-03-09 Seiko Instr & Electronics Ltd Constant voltage power circuit
JPS57126161A (en) * 1981-01-28 1982-08-05 Nec Corp Integrated circuit device

Also Published As

Publication number Publication date
JPS59107560A (ja) 1984-06-21

Similar Documents

Publication Publication Date Title
KR0132053B1 (ko) 반도체집적회로장치 및 그 조합전자장치
JPS60500433A (ja) 基板バイアス制御回路および方法
US5751168A (en) Bus switch integrated circuit with voltage translation
JPS62272620A (ja) 論理回路
US5942784A (en) Semiconductor device
JP2724872B2 (ja) 半導体集積回路用入力回路
US5338986A (en) Latch-up resistant CMOS output circuit
JPH08181598A (ja) 半導体装置
JPS63279491A (ja) 半導体ダイナミツクｒａｍ
JP2560018B2 (ja) Ｃｍｏｓ回路
KR940004402B1 (ko) 센스 앰프를 구비한 반도체 기억장치
EP0320582A2 (en) Bicmos driver circuit including submicron on-chip voltage source
JPH058584B2 (ko)
JPH06325569A (ja) 半導体集積回路の中間電圧発生回路
US4855624A (en) Low-power bipolar-CMOS interface circuit
US5682120A (en) Differential amplifier circuit using lateral-type bipolar transistors with back gates
JPS58130557A (ja) Ｃｍｏｓ装置
US6982597B2 (en) Differential input circuit
JP3165751B2 (ja) 半導体集積回路装置
JP2549729B2 (ja) 半導体集積回路
JP3274561B2 (ja) 半導体集積回路
JPH07235608A (ja) 半導体集積回路装置
JPS6233752B2 (ko)
JPH0157504B2 (ko)
JP3190169B2 (ja) 半導体集積回路