JPH0583184B2 - - Google Patents
Info
- Publication number
- JPH0583184B2 JPH0583184B2 JP63194572A JP19457288A JPH0583184B2 JP H0583184 B2 JPH0583184 B2 JP H0583184B2 JP 63194572 A JP63194572 A JP 63194572A JP 19457288 A JP19457288 A JP 19457288A JP H0583184 B2 JPH0583184 B2 JP H0583184B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- wiring layer
- contact hole
- semiconductor device
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63194572A JPH0244753A (ja) | 1988-08-05 | 1988-08-05 | 半導体装置の製造方法 |
US07/388,037 US5014109A (en) | 1988-08-05 | 1989-08-01 | Miniaturization of a contact hole in a semiconductor device |
EP89114267A EP0362511B1 (fr) | 1988-08-05 | 1989-08-02 | Procédé de fabrication d'un contact pour un dispositif semi-conducteur et dispositif réalisé suivant ce procédé |
DE68923047T DE68923047T2 (de) | 1988-08-05 | 1989-08-02 | Verfahren zum Herstellen eines Kontaktes auf einer Halbleitereinrichtung und nach dem Verfahren hergestellte Halbleitereinrichtung. |
KR1019890011144A KR930002671B1 (ko) | 1988-08-05 | 1989-08-04 | 반도체장치의 제조방법 |
US07/648,515 US5106780A (en) | 1988-08-05 | 1991-01-30 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63194572A JPH0244753A (ja) | 1988-08-05 | 1988-08-05 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0244753A JPH0244753A (ja) | 1990-02-14 |
JPH0583184B2 true JPH0583184B2 (fr) | 1993-11-25 |
Family
ID=16326767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63194572A Granted JPH0244753A (ja) | 1988-08-05 | 1988-08-05 | 半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5014109A (fr) |
EP (1) | EP0362511B1 (fr) |
JP (1) | JPH0244753A (fr) |
KR (1) | KR930002671B1 (fr) |
DE (1) | DE68923047T2 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950025908A (ko) * | 1994-02-03 | 1995-09-18 | 김주용 | 반도체소자 제조방법 |
US5619072A (en) * | 1995-02-09 | 1997-04-08 | Advanced Micro Devices, Inc. | High density multi-level metallization and interconnection structure |
JPH1041406A (ja) * | 1996-07-18 | 1998-02-13 | Mitsubishi Electric Corp | 半導体装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62219542A (ja) * | 1986-03-19 | 1987-09-26 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5799777A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
JPS57177553A (en) * | 1981-04-24 | 1982-11-01 | Toshiba Corp | Semiconductor |
US4617193A (en) * | 1983-06-16 | 1986-10-14 | Digital Equipment Corporation | Planar interconnect for integrated circuits |
JPS6042866A (ja) * | 1983-08-19 | 1985-03-07 | Toshiba Corp | 半導体装置及びその製造方法 |
JPS60217657A (ja) * | 1984-04-12 | 1985-10-31 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
US4656732A (en) * | 1984-09-26 | 1987-04-14 | Texas Instruments Incorporated | Integrated circuit fabrication process |
US4722910A (en) * | 1986-05-27 | 1988-02-02 | Analog Devices, Inc. | Partially self-aligned metal contact process |
JPH07112014B2 (ja) * | 1986-07-09 | 1995-11-29 | 株式会社日立製作所 | 半導体記憶装置 |
-
1988
- 1988-08-05 JP JP63194572A patent/JPH0244753A/ja active Granted
-
1989
- 1989-08-01 US US07/388,037 patent/US5014109A/en not_active Expired - Lifetime
- 1989-08-02 EP EP89114267A patent/EP0362511B1/fr not_active Expired - Lifetime
- 1989-08-02 DE DE68923047T patent/DE68923047T2/de not_active Expired - Fee Related
- 1989-08-04 KR KR1019890011144A patent/KR930002671B1/ko not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62219542A (ja) * | 1986-03-19 | 1987-09-26 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE68923047D1 (de) | 1995-07-20 |
DE68923047T2 (de) | 1995-11-30 |
KR930002671B1 (ko) | 1993-04-07 |
EP0362511A1 (fr) | 1990-04-11 |
US5014109A (en) | 1991-05-07 |
KR900003974A (ko) | 1990-03-27 |
EP0362511B1 (fr) | 1995-06-14 |
JPH0244753A (ja) | 1990-02-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |