JPH0582757B2 - - Google Patents

Info

Publication number
JPH0582757B2
JPH0582757B2 JP23891584A JP23891584A JPH0582757B2 JP H0582757 B2 JPH0582757 B2 JP H0582757B2 JP 23891584 A JP23891584 A JP 23891584A JP 23891584 A JP23891584 A JP 23891584A JP H0582757 B2 JPH0582757 B2 JP H0582757B2
Authority
JP
Japan
Prior art keywords
thin film
laser
semiconductor
recording
laser array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP23891584A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61116891A (ja
Inventor
Kenji Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP23891584A priority Critical patent/JPS61116891A/ja
Publication of JPS61116891A publication Critical patent/JPS61116891A/ja
Publication of JPH0582757B2 publication Critical patent/JPH0582757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP23891584A 1984-11-13 1984-11-13 半導体レ−ザアレイ装置 Granted JPS61116891A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23891584A JPS61116891A (ja) 1984-11-13 1984-11-13 半導体レ−ザアレイ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23891584A JPS61116891A (ja) 1984-11-13 1984-11-13 半導体レ−ザアレイ装置

Publications (2)

Publication Number Publication Date
JPS61116891A JPS61116891A (ja) 1986-06-04
JPH0582757B2 true JPH0582757B2 (https=) 1993-11-22

Family

ID=17037160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23891584A Granted JPS61116891A (ja) 1984-11-13 1984-11-13 半導体レ−ザアレイ装置

Country Status (1)

Country Link
JP (1) JPS61116891A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3028800U (ja) * 1996-03-07 1996-09-13 村田機械株式会社 ラックへの銘板の取付構造

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62102584A (ja) * 1985-10-29 1987-05-13 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS62219589A (ja) * 1986-03-19 1987-09-26 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS63228793A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd 半導体レ−ザ装置
JP2780981B2 (ja) * 1988-06-27 1998-07-30 三菱電機株式会社 多点発光型半導体レーザ及びその製造方法
US7194013B2 (en) 2001-07-02 2007-03-20 Nichia Corporation GaN semiconductor laser device, and optical disk information system using the laser device
JP6257361B2 (ja) 2014-02-04 2018-01-10 三菱電機株式会社 半導体レーザアレイ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3028800U (ja) * 1996-03-07 1996-09-13 村田機械株式会社 ラックへの銘板の取付構造

Also Published As

Publication number Publication date
JPS61116891A (ja) 1986-06-04

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